JP5159081B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP5159081B2
JP5159081B2 JP2006282447A JP2006282447A JP5159081B2 JP 5159081 B2 JP5159081 B2 JP 5159081B2 JP 2006282447 A JP2006282447 A JP 2006282447A JP 2006282447 A JP2006282447 A JP 2006282447A JP 5159081 B2 JP5159081 B2 JP 5159081B2
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film
semiconductor film
laser
semiconductor
laser beam
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JP2007288127A (ja
JP2007288127A5 (enExample
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智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
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    • H10D86/021—Manufacture or treatment of multiple TFTs
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
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    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006282447A 2005-10-18 2006-10-17 半導体装置およびその作製方法 Expired - Fee Related JP5159081B2 (ja)

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JP2006282447A JP5159081B2 (ja) 2005-10-18 2006-10-17 半導体装置およびその作製方法

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JP2005303761 2005-10-18
JP2005303761 2005-10-18
JP2006076454 2006-03-20
JP2006076454 2006-03-20
JP2006282447A JP5159081B2 (ja) 2005-10-18 2006-10-17 半導体装置およびその作製方法

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JP2007288127A JP2007288127A (ja) 2007-11-01
JP2007288127A5 JP2007288127A5 (enExample) 2009-11-12
JP5159081B2 true JP5159081B2 (ja) 2013-03-06

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US (2) US7709309B2 (enExample)
JP (1) JP5159081B2 (enExample)
KR (1) KR101299604B1 (enExample)
WO (1) WO2007046290A1 (enExample)

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