JP2007288127A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2007288127A JP2007288127A JP2006282447A JP2006282447A JP2007288127A JP 2007288127 A JP2007288127 A JP 2007288127A JP 2006282447 A JP2006282447 A JP 2006282447A JP 2006282447 A JP2006282447 A JP 2006282447A JP 2007288127 A JP2007288127 A JP 2007288127A
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Classifications
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Abstract
【解決手段】半導体膜上にキャップ膜を形成したのちにCWレーザまたは発振周波数が10MHz以上のパルスレーザを照射して半導体膜を結晶化する。得られた半導体膜は複数の結晶粒を有し、この結晶粒は幅が0.01μm以上、長さが1μm以上であり、この半導体膜の表面に垂直な方向を第1方向とし、この第1方向を法線ベクトルとする面を第1面とすると、第1面における半導体膜の面方位は、±10°の角度揺らぎの範囲内において{211}方位が4割以上である。この半導体膜を用いて半導体装置を作製する。
【選択図】図9
Description
下地絶縁膜として、酸素を含む窒化珪素膜と、窒素を含む酸化珪素膜とを積層した厚さ150nmの膜を平行平板型のプラズマCVD装置で成膜した。成膜の条件は以下の通りである。
・厚さ 50nm
・ガスの種類(流量)
SiH4(10sccm)
NH3(100sccm)
N2O (20sccm)
H2(400sccm)
・基板温度 300℃
・圧力 40Pa
・RF周波数 27MHz
・RFパワー 50W
・電極間距離 30mm
・厚さ 100nm
・ガスの種類(流量)
SiH4(4sccm)
N2O (800sccm)
・基板温度 400℃
・圧力 40Pa
・RF周波数 27MHz
・RFパワー 50W
・電極間距離 15mm
<非晶質珪素膜>
・厚さ 66nm
・ガスの種類(流量)
SiH4(25sccm)
H2(150sccm)
・基板温度 250℃
・圧力 66.7Pa
・RF周波数 27MHz
・RFパワー 50W
・電極間距離 25mm
・厚さ 500nm
・ガスの種類(流量)
SiH4(4sccm)
N2O (800sccm)
・基板温度 400℃
・圧力 40Pa
・RF周波数 60MHz
・RFパワー 150W
・電極間距離 28mm
02 下地絶縁膜
03 半導体膜
04 キャップ膜
Claims (15)
- 基板上に複数の結晶粒で構成される半導体膜を有し、前記結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記複数の結晶粒で構成される半導体膜の面方位は、±10°の角度揺らぎの範囲内において{211}方位が4割以上であることを特徴とする半導体装置。
- 基板上に複数の結晶粒で構成される半導体膜を有し、前記結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記複数の結晶粒で構成される半導体膜の面方位は、±10°の角度揺らぎの範囲内において{211}方位が4割以上であり、前記基板表面に平行かつ前記結晶粒の長径方向に平行な方向を第2方向とし、前記第2方向を法線ベクトルとする面を第2面とすると、前記第2面における前記複数の結晶粒で構成される半導体膜の面方位は±10°の角度揺らぎの範囲内において{110}方位は5割以上であることを特徴とする半導体装置。
- 基板上に複数の結晶粒で構成される半導体膜を有し、前記結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記複数の結晶粒で構成される半導体膜の面方位は±10°の角度揺らぎの範囲内において{211}方位が4割以上であり、前記第1方向及び前記結晶粒の長径方向に垂直な、結晶粒の短径方向を第3方向とし、前記第3方向を法線ベクトルとする面を第3面とすると、前記第3面における前記複数の結晶粒で構成される半導体膜の面方位は±10°の角度揺らぎの範囲内において{111}方位は4割以上であることを特徴とする半導体装置。
- 基板上に複数の結晶粒で構成される半導体膜を有し、前記結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に平行かつ前記結晶粒の長径方向に平行な方向を第2方向とし、前記第2方向を法線ベクトルとする面を第2面とすると、前記第2面における前記複数の結晶粒で構成される半導体膜の面方位は±10°の角度揺らぎの範囲内において{110}方位は5割以上であり、前記基板表面に平行かつ前記第2方向に垂直な方向を第3方向とし、前記第3方向を法線ベクトルとする面を第3面とすると、前記第3面における前記複数の結晶粒で構成される半導体膜の面方位は±10°の角度揺らぎの範囲内において{111}方位は4割以上であることを特徴とする半導体装置。
- 請求項1乃至請求項4のいずれか1項において、前記半導体膜は珪素であることを特徴とする半導体装置。
- 請求項1乃至請求項5のいずれか1項に記載の半導体装置とは、薄膜トランジスタ、駆動回路、電源回路、IC、メモリ、CPU、記憶素子、ダイオード、光電変換素子、抵抗素子、コイル、容量素子、インダクタ、画素、CCD、またはセンサであることを特徴とする半導体装置。
- 請求項1乃至請求項6のいずれか1項に記載の半導体装置を用いて作製した薄膜集積回路装置、デジタルビデオカメラ、デジタルカメラ等のカメラ、反射型プロジェクター、画像表示装置、ヘッドマウントディスプレイ、ナビゲーションシステム、音響再生装置、携帯型の情報処理端末、ゲーム機器、コンピュータ、または記録媒体を備えた画像再生装置。
- 下地絶縁膜を形成し、前記下地絶縁膜上に半導体膜を形成し、前記半導体膜上にキャップ膜を200nm以上の厚さで形成し、前記キャップ膜を介して前記半導体膜にレーザビームを照射して前記半導体膜を結晶化させることを特徴とする半導体装置の作製方法。
- 基板上に下地絶縁膜を形成し、前記下地絶縁膜上に半導体膜を形成し、前記半導体膜上にキャップ膜を200nm以上の厚さで形成し、前記キャップ膜を介して前記半導体膜にレーザビームを走査させながら照射して前記半導体膜を結晶化させ、前記結晶化された半導体膜の結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内において{211}方位が4割以上であることを特徴とする半導体装置の作製方法。
- 基板上に下地絶縁膜を形成し、前記下地絶縁膜上に半導体膜を形成し、前記半導体膜上にキャップ膜を200nm以上の厚さで形成し、前記キャップ膜を介して前記半導体膜にレーザビームを走査させながら照射して前記半導体膜を結晶化させ、前記結晶化された半導体膜の結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{211}方位の割合は4割以上であり、前記レーザビームの走査方向および前記基板表面に平行な方向を第2方向とし、前記第2方向を法線ベクトルとする面を第2面とすると、前記第2面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{110}方位の割合は5割以上であることを特徴とする半導体装置の作製方法。
- 基板上に下地絶縁膜を形成し、前記下地絶縁膜上に半導体膜を形成し、前記半導体膜上にキャップ膜を200nm以上の厚さで形成し、前記キャップ膜を介して前記半導体膜にレーザビームを走査させながら照射して前記半導体膜を結晶化させ、前記結晶化された半導体膜の結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記基板表面に垂直な方向を第1方向とし、前記第1方向を法線ベクトルとする面を第1面とすると、前記第1面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{211}方位の割合は4割以上であり、前記レーザビームの走査方向と垂直かつ前記基板表面に平行な方向を第3方向とし、前記第3方向を法線ベクトルとする面を第3面とすると、前記第3面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{111}方位の割合は4割以上であることを特徴とする半導体装置の作製方法。
- 基板上に下地絶縁膜を形成し、前記下地絶縁膜上に半導体膜を形成し、前記半導体膜上にキャップ膜を200nm以上の厚さで形成し、前記キャップ膜を介して前記半導体膜にレーザビームを走査させながら照射して前記半導体膜を結晶化させ、前記結晶化された半導体膜の結晶粒の粒径は、幅が0.01μm以上、長さが1μm以上であり、前記レーザビームの走査方向および前記基板表面に平行な方向を第2方向とし、前記第2方向を法線ベクトルとする面を第2面とすると、前記第2面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{110}方位の割合は5割以上であり、前記レーザビームの走査方向と垂直かつ前記基板表面に平行な方向を第3方向とし、前記第3方向を法線ベクトルとする面を第3面とすると、前記第3面における前記結晶化された半導体膜の面方位は±10°の角度揺らぎの範囲内における{111}方位の割合は4割以上であることを特徴とする半導体装置の作製方法。
- 請求項8乃至請求項12のいずれか1項において、前記半導体膜は、珪素であることを特徴とする半導体装置の作製方法。
- 請求項8乃至請求項13のいずれか1項において、前記レーザビームは、連続発振のレーザまたは発振周波数が10MHz以上のパルスレーザを用いることを特徴とする半導体装置の作製方法。
- 請求項8乃至請求項14のいずれか1項において、前記キャップ膜をゲート絶縁膜として用いることを特徴とする半導体装置の作製方法。
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Also Published As
Publication number | Publication date |
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US7709309B2 (en) | 2010-05-04 |
KR101299604B1 (ko) | 2013-08-26 |
KR20080072670A (ko) | 2008-08-06 |
JP5159081B2 (ja) | 2013-03-06 |
US20070087488A1 (en) | 2007-04-19 |
US20100207253A1 (en) | 2010-08-19 |
WO2007046290A1 (en) | 2007-04-26 |
US8058709B2 (en) | 2011-11-15 |
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