JP2007288127A5 - - Google Patents
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- JP2007288127A5 JP2007288127A5 JP2006282447A JP2006282447A JP2007288127A5 JP 2007288127 A5 JP2007288127 A5 JP 2007288127A5 JP 2006282447 A JP2006282447 A JP 2006282447A JP 2006282447 A JP2006282447 A JP 2006282447A JP 2007288127 A5 JP2007288127 A5 JP 2007288127A5
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- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- orientation
- crystal grains
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006282447A JP5159081B2 (ja) | 2005-10-18 | 2006-10-17 | 半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005303761 | 2005-10-18 | ||
| JP2005303761 | 2005-10-18 | ||
| JP2006076454 | 2006-03-20 | ||
| JP2006076454 | 2006-03-20 | ||
| JP2006282447A JP5159081B2 (ja) | 2005-10-18 | 2006-10-17 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007288127A JP2007288127A (ja) | 2007-11-01 |
| JP2007288127A5 true JP2007288127A5 (enExample) | 2009-11-12 |
| JP5159081B2 JP5159081B2 (ja) | 2013-03-06 |
Family
ID=37948631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006282447A Expired - Fee Related JP5159081B2 (ja) | 2005-10-18 | 2006-10-17 | 半導体装置およびその作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7709309B2 (enExample) |
| JP (1) | JP5159081B2 (enExample) |
| KR (1) | KR101299604B1 (enExample) |
| WO (1) | WO2007046290A1 (enExample) |
Families Citing this family (77)
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| JP3992976B2 (ja) | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4271413B2 (ja) * | 2002-06-28 | 2009-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6908797B2 (en) | 2002-07-09 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7605023B2 (en) * | 2002-08-29 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device and heat treatment method therefor |
| TWI253179B (en) * | 2002-09-18 | 2006-04-11 | Sanyo Electric Co | Method for making a semiconductor device |
| JP4627961B2 (ja) * | 2002-09-20 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4744059B2 (ja) * | 2002-11-22 | 2011-08-10 | シャープ株式会社 | 半導体薄膜、半導体薄膜の形成方法、半導体装置およびディスプレイ装置。 |
| JP4360826B2 (ja) * | 2003-04-24 | 2009-11-11 | シャープ株式会社 | 半導体膜およびその製造方法 |
| TWI372463B (en) | 2003-12-02 | 2012-09-11 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| JP5159021B2 (ja) | 2003-12-02 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1553643A3 (en) | 2003-12-26 | 2009-01-21 | Sel Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method for manufacturing crystalline semiconductor film |
| JP4437404B2 (ja) * | 2004-01-08 | 2010-03-24 | シャープ株式会社 | 半導体装置とその製造方法 |
| JP2005217209A (ja) * | 2004-01-30 | 2005-08-11 | Hitachi Ltd | レーザアニール方法およびレーザアニール装置 |
| US7247813B2 (en) * | 2004-10-13 | 2007-07-24 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus using pulsed laser beam |
| EP1716964B1 (en) | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
| WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8278739B2 (en) | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| TWI298183B (en) * | 2006-05-16 | 2008-06-21 | Ind Tech Res Inst | Method for forming poly-silicon film |
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2006
- 2006-10-05 WO PCT/JP2006/320362 patent/WO2007046290A1/en not_active Ceased
- 2006-10-05 KR KR1020087011872A patent/KR101299604B1/ko not_active Expired - Fee Related
- 2006-10-12 US US11/546,447 patent/US7709309B2/en not_active Expired - Fee Related
- 2006-10-17 JP JP2006282447A patent/JP5159081B2/ja not_active Expired - Fee Related
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2010
- 2010-03-17 US US12/725,483 patent/US8058709B2/en not_active Expired - Fee Related
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