JP5060951B2 - プラズマ発生システム - Google Patents
プラズマ発生システム Download PDFInfo
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- JP5060951B2 JP5060951B2 JP2007520452A JP2007520452A JP5060951B2 JP 5060951 B2 JP5060951 B2 JP 5060951B2 JP 2007520452 A JP2007520452 A JP 2007520452A JP 2007520452 A JP2007520452 A JP 2007520452A JP 5060951 B2 JP5060951 B2 JP 5060951B2
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- rod
- gas flow
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- 239000004020 conductor Substances 0.000 claims description 144
- 239000000463 material Substances 0.000 claims description 19
- 230000007246 mechanism Effects 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 12
- 239000012141 concentrate Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 206
- 210000002381 plasma Anatomy 0.000 description 103
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4622—Microwave discharges using waveguides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/463—Microwave discharges using antennas or applicators
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
12 マイクロ波発生器
13 導波管
14 電源
15 アイソレータ
16 ダミーロード
18 サーキュレータ
24 マイクロ波キャビティ
26 ノズル
28 プラズマ
34 ロッド状コンダクタ
36 うず巻状ガイド
37 螺旋状ガス流路
40 ガスフロー管
41 壁
Claims (8)
- マイクロ波が伝搬する空間を形成するキャビティ壁を備えるマイクロ波キャビティと、
誘電材料を含む出口部を持ち、その中にガスが流されるガスフロー管と、
前記ガスフロー管内に配置されるロッド状コンダクタと、
一端部と他端部とを備えた筒状体であって、前記ガスフロー管の外部表面に配置され、前記マイクロ波キャビティのキャビティ壁に前記一端部側が取り付けられると共に前記ガスフロー管を通る際のマイクロ波パワー損失を緩和するように構成され、ガス流を受け入れるための穴を持つ接地遮蔽と、
前記マイクロ波キャビティ内を通過することなく配管され、前記ガスを供給するための管であって、前記接地遮蔽の前記穴に終端が接続されるガス供給管と、
前記ロッド状コンダクタと前記接地遮蔽との間に配置され、前記接地遮蔽に対してロッド状コンダクタを固定して保持するための位置ホルダと、を備え、
前記ロッド状コンダクタは、
マイクロ波を受信するために前記マイクロ波キャビティ内に配置される受信部と、該受信部に連なる先端部とを含み、
前記受信部は、受信したマイクロ波を伝搬して前記先端部に集中させるものであり、前記先端部が前記ガスフロー管の前記出口部及び前記接地遮蔽の前記他端部の近傍に配置されていることを特徴とするプラズマ発生システム。 - 前記ロッド状コンダクタと前記ガスフロー管との間に配置され、前記ロッド状コンダクタの長軸に対して角度の付けられた少なくとも1つの流路を形成し、前記少なくとも1つの流路に沿って通過するガスに前記ロッド状コンダクタの回りに螺旋状の流動方向を付与するうず巻状ガイドをさらに備えることを特徴とする請求項1に記載のプラズマ発生システム。
- 前記ロッド状コンダクタは、円形の断面を持つことを特徴とする請求項1に記載のプラズマ発生システム。
- 前記ガスフロー管は、石英からなることを特徴とする請求項1に記載のプラズマ発生システム。
- 前記ロッド状コンダクタは、その中に空間を区画する部分を備えていることを特徴とする請求項1に記載のプラズマ発生システム。
- 前記先端部は、先細りであることを特徴とする請求項1に記載のプラズマ発生システム。
- 前記ロッド状コンダクタは、2つの異なる材料からなることを特徴とする、請求項1に記載のプラズマ発生システム。
- 前記ロッド状コンダクタは、取り外し可能な固定メカニズムによって接続されている2つの部分を備えることを特徴とする請求項1に記載のプラズマ発生システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/885,237 | 2004-07-07 | ||
US10/885,237 US7164095B2 (en) | 2004-07-07 | 2004-07-07 | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
PCT/US2005/023886 WO2006014455A2 (en) | 2004-07-07 | 2005-07-07 | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008506235A JP2008506235A (ja) | 2008-02-28 |
JP5060951B2 true JP5060951B2 (ja) | 2012-10-31 |
Family
ID=35116039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007520452A Expired - Fee Related JP5060951B2 (ja) | 2004-07-07 | 2005-07-07 | プラズマ発生システム |
Country Status (9)
Country | Link |
---|---|
US (2) | US7164095B2 (ja) |
EP (1) | EP1787500B1 (ja) |
JP (1) | JP5060951B2 (ja) |
KR (2) | KR100906836B1 (ja) |
CN (1) | CN101002508B (ja) |
AU (1) | AU2005270006B2 (ja) |
CA (1) | CA2572391C (ja) |
RU (1) | RU2355137C2 (ja) |
WO (1) | WO2006014455A2 (ja) |
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CN101361409B (zh) * | 2006-01-30 | 2011-09-14 | 赛安株式会社 | 工件处理系统和等离子体产生装置 |
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TW200816881A (en) * | 2006-08-30 | 2008-04-01 | Noritsu Koki Co Ltd | Plasma generation apparatus and workpiece processing apparatus using the same |
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2004
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CN101002508B (zh) | 2010-11-10 |
KR100946434B1 (ko) | 2010-03-10 |
US20060006153A1 (en) | 2006-01-12 |
RU2007104587A (ru) | 2008-08-20 |
KR20070026675A (ko) | 2007-03-08 |
WO2006014455A2 (en) | 2006-02-09 |
JP2008506235A (ja) | 2008-02-28 |
KR100906836B1 (ko) | 2009-07-08 |
CA2572391C (en) | 2012-01-24 |
CA2572391A1 (en) | 2006-02-09 |
AU2005270006B2 (en) | 2009-01-08 |
CN101002508A (zh) | 2007-07-18 |
EP1787500A2 (en) | 2007-05-23 |
US20080017616A1 (en) | 2008-01-24 |
WO2006014455A3 (en) | 2007-01-18 |
US7164095B2 (en) | 2007-01-16 |
AU2005270006A1 (en) | 2006-02-09 |
EP1787500B1 (en) | 2015-09-09 |
RU2355137C2 (ru) | 2009-05-10 |
US8035057B2 (en) | 2011-10-11 |
KR20080092988A (ko) | 2008-10-16 |
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