JP5033807B2 - 極めて高いキャパシタンス値のための集積キャパシタの配置 - Google Patents
極めて高いキャパシタンス値のための集積キャパシタの配置 Download PDFInfo
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- JP5033807B2 JP5033807B2 JP2008539554A JP2008539554A JP5033807B2 JP 5033807 B2 JP5033807 B2 JP 5033807B2 JP 2008539554 A JP2008539554 A JP 2008539554A JP 2008539554 A JP2008539554 A JP 2008539554A JP 5033807 B2 JP5033807 B2 JP 5033807B2
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- 239000003990 capacitor Substances 0.000 title claims description 174
- 239000000758 substrate Substances 0.000 claims description 75
- 239000011148 porous material Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
102、302、502、602 トレンチキャパシタ
104、304、504、604 基板
106、506、606 充填したポア
108、308、508、608 交互の層配列
110、114、118、314、318、514、518、 614、618、
664 導電層
112、116、312、316、512、516、612、616、662
誘電体層
114、118 導電ポリシリコン層
120 基板の最上面
122、124 コンタクト
126、526 中間の誘電体層
128、130 コンタクト開口部
132、134、332、334、340 内部の接触パッド
322、324 コンタクト素子
336 基板コンタクト
338 コンタクト開口部
400、700、800 電子回路
442、444 キャパシタ
446、454、456、458 スイッチング素子
448 入力インターフェース
450 出力
452 制御回路
522 接触要素
530、560 コンタクト開口部
534 ボンドパッド
766 信号入力
768 第1の電極
770 第2の電極
S1、S2、S3、S4 スイッチング素子
C1、C2 トレンチキャパシタ
2C 電子装置
Claims (11)
- 第1の基板の面上に、基板(104,504,604)における複数のトレンチキャパシタ(102,302,502,602)を備える電子装置(100,300,400,500,600,700,800)であって、各トレンチキャパシタは、
少なくとも2つの誘電体層(112,116;312,316;512,516;612,616,662)及び少なくとも2つの導電層(110,114,118;314,318;514,518;614,618,664)の交互の層配列(108,308,508,608)であって、少なくとも2つの導電層が少なくとも2つの誘電体層の各々によって互いから及び基板(104,504,604)から電気的に絶縁されている交互の層配列と、
第1の基板の面上の内部の接触パッドのセット(132,134;332,334,340)であって、前記トレンチキャパシタが設けられるとともに各内部の接触パッドが前記導電層(110,114,118;314,318;514,518;614,618,664)の各々と又は前記基板(104,504,604)と接続されている内部の接触パッドのセット
とを含み、
前記複数のトレンチキャパシタが第1のキャパシタ電極を有する分布したキャパシタ構造を構成し、該第1のキャパシタ電極が該分布したキャパシタ構造の各トレンチキャパシタからの少なくとも1つの導電層である第1の数の対応する導電層によって形成され、前記導電層が各内部の接触パッド間の相互接続によって接続されており、
前記分布したキャパシタ構造が少なくとも1つの第2のキャパシタ電極を有し、該第2のキャパシタ電極が該分布したキャパシタ構造の各トレンチキャパシタからの少なくとも1つの導電層である第2の数の対応する導電層によって形成され、前記第2の数の導電層が各内部の接触パッド間の相互接続によって接続されており、
少なくとも1つの第1の導電層(518)が前記第1のキャパシタ電極を形成し、少なくとも1つの第2の導電層(514)が前記第2のキャパシタ電極を形成し、前記第1のキャパシタ電極(518)が内部の基板の接触パッド(534,560)と接続されており、前記第2のキャパシタ電極(515)が浮遊している、
電子装置。 - 前記交互の層配列が、2つの誘電体層と、2つの導電層と、さらに、MIMIM構造において、第3の導電層又はトレンチキャパシタの基板のいずれかを備える請求項1記載の電子装置。
- 前記2つの誘電体層が、各層の厚さと各誘電体層の所定の材料に特有の各誘電率との間の比率において異なる請求項1又は2記載の電子装置。
- 前記交互の層配列(108,308,508,608)に含まれる前記誘電体層の厚さの値が互いに異なる請求項3記載の電子装置。
- 前記交互の層配列(108,308,508,608)に含まれる前記誘電体層の誘電率が互いに異なる請求項3記載の電子装置。
- 前記交互の層配列(608)が、少なくとも3つの誘電体層(612,616,662)と、少なくとも3つの導電層(614,618,664)とを、前記少なくとも3つの導電層が該少なくとも3つの誘電体層の各々によって互いから及び基板から電気的に絶縁されるように備える請求項1記載の電子装置。
- 充填したポア(106,506,606)が、1〜3マイクロメーターの直径と、10〜30のトレンチの直径にわたるトレンチの深さの比として定義されるアスペクト比を有する請求項1記載の電子装置。
- 少なくとも100nF/mm2のキャパシタンス密度と10〜70Vの破壊電圧を有するように構成されている請求項1記載の電子装置。
- 請求項1記載の電子装置を備える電子回路(400,700,800)。
- 請求項1又は7記載の電子装置(2C)を含むチャージポンプ回路(800)を備える電子回路。
- DC−DCコンバータとして構成される請求項9記載の電子回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05110488.3 | 2005-11-08 | ||
EP05110488 | 2005-11-08 | ||
PCT/IB2006/054063 WO2007054858A2 (en) | 2005-11-08 | 2006-11-02 | Integrated capacitor arrangement for ultrahigh capacitance values |
Publications (2)
Publication Number | Publication Date |
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JP2009515353A JP2009515353A (ja) | 2009-04-09 |
JP5033807B2 true JP5033807B2 (ja) | 2012-09-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008539554A Active JP5033807B2 (ja) | 2005-11-08 | 2006-11-02 | 極めて高いキャパシタンス値のための集積キャパシタの配置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8085524B2 (ja) |
EP (1) | EP1949418A2 (ja) |
JP (1) | JP5033807B2 (ja) |
CN (1) | CN101341576B (ja) |
TW (1) | TWI415270B (ja) |
WO (1) | WO2007054858A2 (ja) |
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EP1949418A2 (en) | 2008-07-30 |
TWI415270B (zh) | 2013-11-11 |
US20080291601A1 (en) | 2008-11-27 |
CN101341576B (zh) | 2012-05-30 |
WO2007054858A2 (en) | 2007-05-18 |
JP2009515353A (ja) | 2009-04-09 |
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US8085524B2 (en) | 2011-12-27 |
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