FR3063387B1 - Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique - Google Patents

Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique Download PDF

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Publication number
FR3063387B1
FR3063387B1 FR1751499A FR1751499A FR3063387B1 FR 3063387 B1 FR3063387 B1 FR 3063387B1 FR 1751499 A FR1751499 A FR 1751499A FR 1751499 A FR1751499 A FR 1751499A FR 3063387 B1 FR3063387 B1 FR 3063387B1
Authority
FR
France
Prior art keywords
electronic component
fingers
electrical connection
transistor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1751499A
Other languages
English (en)
Other versions
FR3063387A1 (fr
Inventor
Benoit Thollin
Thibault Catelain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1751499A priority Critical patent/FR3063387B1/fr
Priority to US16/488,003 priority patent/US10957639B2/en
Priority to PCT/FR2018/050418 priority patent/WO2018154242A2/fr
Priority to EP18709686.2A priority patent/EP3586360B1/fr
Publication of FR3063387A1 publication Critical patent/FR3063387A1/fr
Application granted granted Critical
Publication of FR3063387B1 publication Critical patent/FR3063387B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material

Abstract

Le composant électronique (1) comprend une partie (2) intégrant un transistor (3) muni d'une électrode de commande (31) et de première et deuxième électrodes (32, 33). Le composant électronique (1) comporte des première, deuxième et troisième bornes de connexion électrique (4, 5, 6) s'étendant sur une face de connexion (7) de ladite partie (2) intégrant le transistor (3), la première borne de connexion électrique (4) étant en lien électrique avec la première électrode (32), la deuxième borne de connexion électrique (5) étant en lien électrique avec la deuxième électrode (33) et la troisième borne de connexion électrique (6) étant en lien électrique avec l'électrode de commande (31). Le composant électronique (1) comporte un premier ensemble (8) de doigts électriquement conducteurs et un deuxième ensemble (9) de doigts électriquement conducteurs, les doigts (8a, 9a) des premier et deuxième ensembles (8, 9) de doigts étant interdigités, au niveau de la face de connexion (7), pour former au moins une partie d'un composant capacitif. Les doigts (8a) du premier ensemble (8) de doigts sont reliés électriquement à la première borne de connexion électrique (4).
FR1751499A 2017-02-24 2017-02-24 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique Expired - Fee Related FR3063387B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1751499A FR3063387B1 (fr) 2017-02-24 2017-02-24 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique
US16/488,003 US10957639B2 (en) 2017-02-24 2018-02-22 Electronic component having a transistor and interdigitated fingers to form at least a portion of a capacitive component within the electronic component
PCT/FR2018/050418 WO2018154242A2 (fr) 2017-02-24 2018-02-22 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique
EP18709686.2A EP3586360B1 (fr) 2017-02-24 2018-02-22 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1751499 2017-02-24
FR1751499A FR3063387B1 (fr) 2017-02-24 2017-02-24 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique

Publications (2)

Publication Number Publication Date
FR3063387A1 FR3063387A1 (fr) 2018-08-31
FR3063387B1 true FR3063387B1 (fr) 2021-05-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1751499A Expired - Fee Related FR3063387B1 (fr) 2017-02-24 2017-02-24 Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique

Country Status (4)

Country Link
US (1) US10957639B2 (fr)
EP (1) EP3586360B1 (fr)
FR (1) FR3063387B1 (fr)
WO (1) WO2018154242A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3817045B1 (fr) * 2019-10-31 2024-02-07 Infineon Technologies Austria AG Dispositif semi-conducteur et onduleur

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW373320B (en) 1996-05-27 1999-11-01 United Microelectronics Corporaiton Structure and production method of capacitor of dynamic RAM
US6410955B1 (en) * 2001-04-19 2002-06-25 Micron Technology, Inc. Comb-shaped capacitor for use in integrated circuits
JP3863391B2 (ja) 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4024572B2 (ja) * 2002-03-28 2007-12-19 ユーディナデバイス株式会社 インタディジタルキャパシタを有するデバイス
US7022581B2 (en) 2004-07-08 2006-04-04 Agere Systems Inc. Interdigitaded capacitors
US7241695B2 (en) 2005-10-06 2007-07-10 Freescale Semiconductor, Inc. Semiconductor device having nano-pillars and method therefor
CN1953181B (zh) * 2005-10-21 2010-10-13 松下电器产业株式会社 模拟数字转换器
EP1949419A1 (fr) 2005-11-08 2008-07-30 Nxp B.V. Dispositif condensateur a tranchee pour applications de decouplage dans une operation haute frequence
JP5033807B2 (ja) 2005-11-08 2012-09-26 エヌエックスピー ビー ヴィ 極めて高いキャパシタンス値のための集積キャパシタの配置
TW200807729A (en) 2006-06-02 2008-02-01 Kenet Inc Improved metal-insulator-metal capacitors
US8424177B2 (en) 2006-10-04 2013-04-23 Stmicroelectronics (Crolles 2) Sas MIM capacitor with enhanced capacitance
JP2008226998A (ja) * 2007-03-09 2008-09-25 Matsushita Electric Ind Co Ltd 半導体集積回路
US8022458B2 (en) 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
FR2965942B1 (fr) * 2010-10-08 2013-02-22 Commissariat Energie Atomique Afficheur a cristal liquide de type transmissif en technologie cmos avec capacite de stockage auxiliaire
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US9685433B2 (en) * 2013-09-25 2017-06-20 Taiwan Semiconductor Manufacturing Company Ltd. Capacitor device
KR102163725B1 (ko) 2013-12-03 2020-10-08 삼성전자주식회사 반도체 소자 및 그 제조방법
US9640532B2 (en) * 2014-02-14 2017-05-02 Qualcomm Incorporated Stacked metal oxide semiconductor (MOS) and metal oxide metal (MOM) capacitor architecture
CN103972118A (zh) 2014-05-28 2014-08-06 江阴长电先进封装有限公司 一种晶圆级铜柱凸块结构的金属帽的形成方法

Also Published As

Publication number Publication date
WO2018154242A2 (fr) 2018-08-30
US10957639B2 (en) 2021-03-23
WO2018154242A3 (fr) 2018-11-22
EP3586360A2 (fr) 2020-01-01
EP3586360B1 (fr) 2021-12-29
US20200135638A1 (en) 2020-04-30
FR3063387A1 (fr) 2018-08-31

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