JP4991042B2 - 直付リード線を備えるｉｃチップパッケージ - Google Patents

直付リード線を備えるｉｃチップパッケージ Download PDF

Info

Publication number
JP4991042B2
JP4991042B2 JP15208099A JP15208099A JP4991042B2 JP 4991042 B2 JP4991042 B2 JP 4991042B2 JP 15208099 A JP15208099 A JP 15208099A JP 15208099 A JP15208099 A JP 15208099A JP 4991042 B2 JP4991042 B2 JP 4991042B2
Authority
JP
Japan
Prior art keywords
source
chip
contact region
gate
power mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15208099A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11354702A5 (enExample
JPH11354702A (ja
Inventor
ワイ・モハメッド・カセム
アンソニー・シー・ツイ
リソング・ラオ
ユエ−セ・ホー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JPH11354702A publication Critical patent/JPH11354702A/ja
Publication of JPH11354702A5 publication Critical patent/JPH11354702A5/ja
Application granted granted Critical
Publication of JP4991042B2 publication Critical patent/JP4991042B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP15208099A 1998-06-02 1999-05-31 直付リード線を備えるｉｃチップパッケージ Expired - Lifetime JP4991042B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/089,310 US6249041B1 (en) 1998-06-02 1998-06-02 IC chip package with directly connected leads
US09/089310 1998-06-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009211270A Division JP5442368B2 (ja) 1998-06-02 2009-09-14 直付リード線を備えるｉｃチップパッケージ

Publications (3)

Publication Number Publication Date
JPH11354702A JPH11354702A (ja) 1999-12-24
JPH11354702A5 JPH11354702A5 (enExample) 2005-12-22
JP4991042B2 true JP4991042B2 (ja) 2012-08-01

Family

ID=22216920

Family Applications (2)

Application Number Title Priority Date Filing Date
JP15208099A Expired - Lifetime JP4991042B2 (ja) 1998-06-02 1999-05-31 直付リード線を備えるｉｃチップパッケージ
JP2009211270A Expired - Lifetime JP5442368B2 (ja) 1998-06-02 2009-09-14 直付リード線を備えるｉｃチップパッケージ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009211270A Expired - Lifetime JP5442368B2 (ja) 1998-06-02 2009-09-14 直付リード線を備えるｉｃチップパッケージ

Country Status (6)

Country Link
US (1) US6249041B1 (enExample)
EP (4) EP2058857A3 (enExample)
JP (2) JP4991042B2 (enExample)
KR (1) KR100363776B1 (enExample)
DE (1) DE69940386D1 (enExample)
TW (1) TW520541B (enExample)

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423623B1 (en) * 1998-06-09 2002-07-23 Fairchild Semiconductor Corporation Low Resistance package for semiconductor devices
KR20000057810A (ko) 1999-01-28 2000-09-25 가나이 쓰토무 반도체 장치
WO2000049656A1 (fr) * 1999-02-17 2000-08-24 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication associe
JP3871486B2 (ja) * 1999-02-17 2007-01-24 株式会社ルネサステクノロジ 半導体装置
US6856013B1 (en) * 1999-02-19 2005-02-15 Micron Technology, Inc. Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit
US6825550B2 (en) 1999-09-02 2004-11-30 Micron Technology, Inc. Board-on-chip packages with conductive foil on the chip surface
US7211877B1 (en) * 1999-09-13 2007-05-01 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
US6867499B1 (en) * 1999-09-30 2005-03-15 Skyworks Solutions, Inc. Semiconductor packaging
US6459147B1 (en) 2000-03-27 2002-10-01 Amkor Technology, Inc. Attaching semiconductor dies to substrates with conductive straps
US6521982B1 (en) 2000-06-02 2003-02-18 Amkor Technology, Inc. Packaging high power integrated circuit devices
US6720642B1 (en) * 1999-12-16 2004-04-13 Fairchild Semiconductor Corporation Flip chip in leaded molded package and method of manufacture thereof
US6762067B1 (en) * 2000-01-18 2004-07-13 Fairchild Semiconductor Corporation Method of packaging a plurality of devices utilizing a plurality of lead frames coupled together by rails
JP3864029B2 (ja) * 2000-03-24 2006-12-27 松下電器産業株式会社 半導体パッケージ及び半導体パッケージの製造方法
US6989588B2 (en) * 2000-04-13 2006-01-24 Fairchild Semiconductor Corporation Semiconductor device including molded wireless exposed drain packaging
US6870254B1 (en) * 2000-04-13 2005-03-22 Fairchild Semiconductor Corporation Flip clip attach and copper clip attach on MOSFET device
US6566164B1 (en) 2000-12-07 2003-05-20 Amkor Technology, Inc. Exposed copper strap in a semiconductor package
US6717260B2 (en) * 2001-01-22 2004-04-06 International Rectifier Corporation Clip-type lead frame for source mounted die
US6469398B1 (en) 2001-03-29 2002-10-22 Kabushiki Kaisha Toshiba Semiconductor package and manufacturing method thereof
US6645791B2 (en) * 2001-04-23 2003-11-11 Fairchild Semiconductor Semiconductor die package including carrier with mask
US6791172B2 (en) 2001-04-25 2004-09-14 General Semiconductor Of Taiwan, Ltd. Power semiconductor device manufactured using a chip-size package
US7057273B2 (en) * 2001-05-15 2006-06-06 Gem Services, Inc. Surface mount package
USD471165S1 (en) 2001-05-15 2003-03-04 Gem Services, Inc. Surface mount package
USD467884S1 (en) 2001-05-15 2002-12-31 Gem Services, Inc. Surface mount package
USD461170S1 (en) 2001-05-15 2002-08-06 Gem Services, Inc. Surface mount package
USD461783S1 (en) 2001-06-08 2002-08-20 Gem Services, Inc. Surface mount package
EP1271648A1 (en) * 2001-06-22 2003-01-02 Siliconx (Taiwan) Ltd Power semiconductor package and method for making the same
USD467560S1 (en) 2001-07-17 2002-12-24 Gem Services, Inc. Surface mount package
JP2003100976A (ja) * 2001-09-27 2003-04-04 Sanyo Electric Co Ltd 半導体装置
US20030064542A1 (en) * 2001-10-02 2003-04-03 Corisis David J. Methods of packaging an integrated circuit
EP1316999A1 (de) * 2001-11-28 2003-06-04 Continental ISAD Electronic Systems GmbH & Co. oHG Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen
US7323361B2 (en) * 2002-03-29 2008-01-29 Fairchild Semiconductor Corporation Packaging system for semiconductor devices
EP1357594A1 (en) * 2002-04-23 2003-10-29 General Semiconductor of Taiwan, Ltd. Power semiconductor device manufactured using a chip-size package
TW540123B (en) * 2002-06-14 2003-07-01 Siliconware Precision Industries Co Ltd Flip-chip semiconductor package with lead frame as chip carrier
JP2004079760A (ja) 2002-08-19 2004-03-11 Nec Electronics Corp 半導体装置及びその組立方法
US7061077B2 (en) 2002-08-30 2006-06-13 Fairchild Semiconductor Corporation Substrate based unmolded package including lead frame structure and semiconductor die
US20040080028A1 (en) 2002-09-05 2004-04-29 Kabushiki Kaisha Toshiba Semiconductor device with semiconductor chip mounted in package
DE10301091B4 (de) * 2003-01-14 2015-01-22 Infineon Technologies Ag Leistungs-Halbleiterbauelement und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtungen
DE10303463B4 (de) * 2003-01-29 2006-06-14 Infineon Technologies Ag Halbleiterbauelement mit wenigstens zwei in einem Gehäuse integrierten und durch einen gemeinsamen Kontaktbügel kontaktierten Chips
JP4173751B2 (ja) * 2003-02-28 2008-10-29 株式会社ルネサステクノロジ 半導体装置
JP2004349347A (ja) * 2003-05-20 2004-12-09 Rohm Co Ltd 半導体装置
US7208818B2 (en) * 2004-07-20 2007-04-24 Alpha And Omega Semiconductor Ltd. Power semiconductor package
US7759775B2 (en) * 2004-07-20 2010-07-20 Alpha And Omega Semiconductor Incorporated High current semiconductor power device SOIC package
US20060145319A1 (en) * 2004-12-31 2006-07-06 Ming Sun Flip chip contact (FCC) power package
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
US9337132B2 (en) * 2004-12-31 2016-05-10 Alpha And Omega Semiconductor Incorporated Methods and configuration for manufacturing flip chip contact (FCC) power package
US7511361B2 (en) 2005-01-05 2009-03-31 Xiaotian Zhang DFN semiconductor package having reduced electrical resistance
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US7898092B2 (en) * 2007-11-21 2011-03-01 Alpha & Omega Semiconductor, Stacked-die package for battery power management
US20060145312A1 (en) * 2005-01-05 2006-07-06 Kai Liu Dual flat non-leaded semiconductor package
JP2006203048A (ja) * 2005-01-21 2006-08-03 Matsushita Electric Ind Co Ltd 半導体装置
DE102005011159B4 (de) * 2005-03-09 2013-05-16 Infineon Technologies Ag Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben
JP2006324320A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置
DE102005027356B4 (de) * 2005-06-13 2007-11-22 Infineon Technologies Ag Halbleiterleistungsbauteilstapel in Flachleitertechnik mit oberflächenmontierbaren Außenkontakten und ein Verfahren zur Herstellung desselben
US20070075419A1 (en) * 2005-09-06 2007-04-05 Denso Corporation Semiconductor device having metallic lead and electronic device having lead frame
US20070057368A1 (en) * 2005-09-13 2007-03-15 Yueh-Se Ho Semiconductor package having plate interconnections
US7622796B2 (en) * 2005-09-13 2009-11-24 Alpha And Omega Semiconductor Limited Semiconductor package having a bridged plate interconnection
US7683464B2 (en) * 2005-09-13 2010-03-23 Alpha And Omega Semiconductor Incorporated Semiconductor package having dimpled plate interconnections
US20070075406A1 (en) * 2005-09-30 2007-04-05 Yueh-Se Ho Wafer-level method for metallizing source, gate and drain contact areas of semiconductor die
US7285849B2 (en) * 2005-11-18 2007-10-23 Fairchild Semiconductor Corporation Semiconductor die package using leadframe and clip and method of manufacturing
DE102006005420B4 (de) * 2006-02-03 2010-07-15 Infineon Technologies Ag Stapelbares Halbleiterbauteil und Verfahren zur Herstellung desselben
DE102006015447B4 (de) * 2006-03-31 2012-08-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit einem Leistungshalbleiterchip und Verfahren zur Herstellung desselben
JP5165214B2 (ja) * 2006-06-26 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US20080036078A1 (en) * 2006-08-14 2008-02-14 Ciclon Semiconductor Device Corp. Wirebond-less semiconductor package
DE102006060484B4 (de) * 2006-12-19 2012-03-08 Infineon Technologies Ag Halbleiterbauelement mit einem Halbleiterchip und Verfahren zur Herstellung desselben
US8237268B2 (en) 2007-03-20 2012-08-07 Infineon Technologies Ag Module comprising a semiconductor chip
GB2451077A (en) * 2007-07-17 2009-01-21 Zetex Semiconductors Plc Semiconductor chip package
MX2010003215A (es) * 2007-11-01 2010-04-30 Logined Bv Simulacion de fractura de deposito.
TWI456707B (zh) * 2008-01-28 2014-10-11 瑞薩電子股份有限公司 半導體裝置及其製造方法
JP2009200338A (ja) * 2008-02-22 2009-09-03 Renesas Technology Corp 半導体装置の製造方法
JP4804497B2 (ja) * 2008-03-24 2011-11-02 ルネサスエレクトロニクス株式会社 半導体装置
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package
WO2010004609A1 (ja) * 2008-07-07 2010-01-14 三菱電機株式会社 電力用半導体装置
JP5107839B2 (ja) 2008-09-10 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置
US8138587B2 (en) * 2008-09-30 2012-03-20 Infineon Technologies Ag Device including two mounting surfaces
US8188587B2 (en) * 2008-11-06 2012-05-29 Fairchild Semiconductor Corporation Semiconductor die package including lead with end portion
US8124449B2 (en) 2008-12-02 2012-02-28 Infineon Technologies Ag Device including a semiconductor chip and metal foils
US20100164078A1 (en) * 2008-12-31 2010-07-01 Ruben Madrid Package assembly for semiconductor devices
JP5621217B2 (ja) * 2009-06-11 2014-11-12 シンフォニアテクノロジー株式会社 電子モジュールの製造方法及び電子モジュール並びに車両
US8164199B2 (en) * 2009-07-31 2012-04-24 Alpha and Omega Semiconductor Incorporation Multi-die package
US9257375B2 (en) 2009-07-31 2016-02-09 Alpha and Omega Semiconductor Inc. Multi-die semiconductor package
DE102009041641B4 (de) * 2009-09-17 2020-09-24 Pac Tech-Packaging Technologies Gmbh Diodenanordnung und Verfahren zur Herstellung einer Diodenanordnung
US9728868B1 (en) 2010-05-05 2017-08-08 Cree Fayetteville, Inc. Apparatus having self healing liquid phase power connects and method thereof
KR101101018B1 (ko) * 2010-06-21 2011-12-29 김재구 리드선이 개량된 다이오드 패키지 및 그 제조방법
DE102011003870A1 (de) * 2011-02-09 2012-08-09 Robert Bosch Gmbh Schaltungsmodul für ein Fahrzeug
JP5787784B2 (ja) * 2012-02-15 2015-09-30 ルネサスエレクトロニクス株式会社 半導体装置
US8803185B2 (en) * 2012-02-21 2014-08-12 Peiching Ling Light emitting diode package and method of fabricating the same
JP2012235164A (ja) * 2012-08-20 2012-11-29 Renesas Electronics Corp 半導体装置
DE102012019391A1 (de) * 2012-10-02 2014-04-03 Infineon Technologies Ag Leitungshalbleitergehäuse mit redundanter Funktionalität
JP6338937B2 (ja) * 2014-06-13 2018-06-06 ローム株式会社 パワーモジュールおよびその製造方法
JP2016062904A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体装置
JP2017022258A (ja) * 2015-07-10 2017-01-26 株式会社東芝 半導体パッケージ
US9679831B2 (en) 2015-08-13 2017-06-13 Cypress Semiconductor Corporation Tape chip on lead using paste die attach material
JP6764112B2 (ja) * 2016-08-12 2020-09-30 ミツミ電機株式会社 電池保護装置
CN108738366B (zh) * 2017-02-20 2022-03-15 新电元工业株式会社 电子装置
CN109075146A (zh) * 2017-02-20 2018-12-21 新电元工业株式会社 电子装置、连接体以及电子装置的制造方法
EP3584592A4 (en) * 2017-02-20 2020-11-18 Shindengen Electric Manufacturing Co., Ltd. ELECTRONIC DEVICE AND CONNECTOR
US10720380B1 (en) 2017-06-13 2020-07-21 Starlet R. Glover Flip-chip wire bondless power device
US10553524B2 (en) * 2017-10-30 2020-02-04 Microchip Technology Incorporated Integrated circuit (IC) die attached between an offset lead frame die-attach pad and a discrete die-attach pad
US11373936B2 (en) * 2019-11-14 2022-06-28 Rohde & Schwarz Gmbh & Co. Kg Flat no-leads package, packaged electronic component, printed circuit board and measurement device
US12199045B2 (en) * 2020-03-27 2025-01-14 Wolfspeed, Inc. Power semiconductor package with improved performance
JP6967627B2 (ja) * 2020-05-08 2021-11-17 アオイ電子株式会社 半導体装置
US11908771B2 (en) 2021-11-12 2024-02-20 Infineon Technologies Ag Power semiconductor device with dual heat dissipation structures
CN118402064A (zh) * 2021-12-17 2024-07-26 罗姆股份有限公司 电子装置
WO2024253639A1 (en) * 2023-06-06 2024-12-12 Siliconix Incorporated Semiconductor device having single-member conductive leads coupled to both sides of a die, and method for forming, and system incorporating, the semiconductor device
USD1029476S1 (en) * 2023-06-30 2024-06-04 Skechers U.S.A., Inc. Ii Shoe outsole bottom
DE102023126006A1 (de) 2023-09-26 2025-03-27 Infineon Technologies Ag Halbleiterbauelement mit einem zwischen zwei leiterrahmen eingeschlossenen halbleiterdie und verfahren zur herstellung desselben

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52172A (en) * 1975-06-23 1977-01-05 Hitachi Ltd Semiconductor
JPS5577165A (en) * 1978-12-06 1980-06-10 Mitsubishi Electric Corp Semiconductor device
US4439918A (en) * 1979-03-12 1984-04-03 Western Electric Co., Inc. Methods of packaging an electronic device
US4380114A (en) * 1979-04-11 1983-04-19 Teccor Electronics, Inc. Method of making a semiconductor switching device
US4935803A (en) 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
US5028987A (en) * 1989-07-03 1991-07-02 General Electric Company High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip
JPH04503283A (ja) * 1989-07-03 1992-06-11 ゼネラル・エレクトリック・カンパニイ 半導体チップを含むインダクタンスの小さいカプセル封じパッケージ
JP2901091B2 (ja) * 1990-09-27 1999-06-02 株式会社日立製作所 半導体装置
JP2982126B2 (ja) * 1991-03-20 1999-11-22 株式会社日立製作所 半導体装置およびその製造方法
JP2747634B2 (ja) * 1992-10-09 1998-05-06 ローム株式会社 面実装型ダイオード
JP2670408B2 (ja) 1992-10-27 1997-10-29 株式会社東芝 樹脂封止型半導体装置及びその製造方法
JPH07230934A (ja) * 1994-02-18 1995-08-29 Rohm Co Ltd 電子部品及びその基板実装構造
US5544412A (en) 1994-05-24 1996-08-13 Motorola, Inc. Method for coupling a power lead to a bond pad in an electronic module
DE69418037T2 (de) * 1994-08-02 1999-08-26 Consorzio Per La Ricerca Sulla Microelettronica Ne Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau
JP3027512B2 (ja) * 1994-08-23 2000-04-04 株式会社日立製作所 パワーｍｏｓｆｅｔ
JPH08116016A (ja) * 1994-10-15 1996-05-07 Toshiba Corp リードフレーム及び半導体装置
US5821611A (en) * 1994-11-07 1998-10-13 Rohm Co. Ltd. Semiconductor device and process and leadframe for making the same
US5665996A (en) 1994-12-30 1997-09-09 Siliconix Incorporated Vertical power mosfet having thick metal layer to reduce distributed resistance
US6040626A (en) 1998-09-25 2000-03-21 International Rectifier Corp. Semiconductor package

Also Published As

Publication number Publication date
EP2306513A3 (en) 2011-10-12
TW520541B (en) 2003-02-11
EP0962975A3 (en) 2000-08-16
KR20000005823A (ko) 2000-01-25
US6249041B1 (en) 2001-06-19
EP0962975A2 (en) 1999-12-08
EP2306515A3 (en) 2011-10-26
JP2009302564A (ja) 2009-12-24
EP2058857A3 (en) 2011-05-18
DE69940386D1 (de) 2009-03-26
EP0962975B1 (en) 2009-02-11
JP5442368B2 (ja) 2014-03-12
EP2306515A2 (en) 2011-04-06
KR100363776B1 (ko) 2002-12-11
EP2058857A2 (en) 2009-05-13
JPH11354702A (ja) 1999-12-24
EP2306513A2 (en) 2011-04-06

Similar Documents

Publication Publication Date Title
JP4991042B2 (ja) 直付リード線を備えるｉｃチップパッケージ
TWI450373B (zh) 雙側冷卻整合功率裝置封裝及模組，以及製造方法
JP3027512B2 (ja) パワーｍｏｓｆｅｔ
US7061080B2 (en) Power module package having improved heat dissipating capability
US7663212B2 (en) Electronic component having exposed surfaces
JP2011097090A (ja) ドレインクリップを備えた半導体ダイパッケージ
US6841865B2 (en) Semiconductor device having clips for connecting to external elements
US20080054438A1 (en) Semiconductor package structure having multiple heat dissipation paths and method of manufacture
US5299091A (en) Packaged semiconductor device having heat dissipation/electrical connection bumps and method of manufacturing same
JP2000223634A (ja) 半導体装置
CN101263596A (zh) 可逆多占地面积封装和制造方法
US12300583B2 (en) Concealed gate terminal semiconductor packages and related methods
US7566967B2 (en) Semiconductor package structure for vertical mount and method
JP2829925B2 (ja) 半導体パッケージ及び電子回路盤
JP3685659B2 (ja) 半導体装置の製造方法
US8120169B2 (en) Thermally enhanced molded leadless package
JPH09186288A (ja) 半導体装置
JPH07176664A (ja) 半導体装置およびその製造方法
CN111554666B (zh) 功率半导体器件封装件
CN114203659A (zh) 多层互连带
JP3894749B2 (ja) 半導体装置
JP3995661B2 (ja) パワーｍｏｓｆｅｔの製造方法
JP2000068423A (ja) 半導体装置及びその製造方法
JPH09283690A (ja) 半導体集積回路用リードフレーム
JPH0870069A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090406

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090914

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091124

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20091225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110418

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110425

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110520

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110525

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110620

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110627

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110722

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111201

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111206

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111227

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120110

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120127

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120229

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120507

R150 Certificate of patent or registration of utility model

Ref document number: 4991042

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150511

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term