DE69940386D1 - Leistungs-MOSFET-Verpackung mit direkt angeschlossenen Leitern - Google Patents
Leistungs-MOSFET-Verpackung mit direkt angeschlossenen LeiternInfo
- Publication number
- DE69940386D1 DE69940386D1 DE69940386T DE69940386T DE69940386D1 DE 69940386 D1 DE69940386 D1 DE 69940386D1 DE 69940386 T DE69940386 T DE 69940386T DE 69940386 T DE69940386 T DE 69940386T DE 69940386 D1 DE69940386 D1 DE 69940386D1
- Authority
- DE
- Germany
- Prior art keywords
- directly connected
- power mosfet
- connected conductors
- mosfet packaging
- packaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/089,310 US6249041B1 (en) | 1998-06-02 | 1998-06-02 | IC chip package with directly connected leads |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69940386D1 true DE69940386D1 (de) | 2009-03-26 |
Family
ID=22216920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69940386T Expired - Lifetime DE69940386D1 (de) | 1998-06-02 | 1999-05-22 | Leistungs-MOSFET-Verpackung mit direkt angeschlossenen Leitern |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6249041B1 (enExample) |
| EP (4) | EP2058857A3 (enExample) |
| JP (2) | JP4991042B2 (enExample) |
| KR (1) | KR100363776B1 (enExample) |
| DE (1) | DE69940386D1 (enExample) |
| TW (1) | TW520541B (enExample) |
Families Citing this family (106)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423623B1 (en) * | 1998-06-09 | 2002-07-23 | Fairchild Semiconductor Corporation | Low Resistance package for semiconductor devices |
| KR20000057810A (ko) | 1999-01-28 | 2000-09-25 | 가나이 쓰토무 | 반도체 장치 |
| WO2000049656A1 (fr) * | 1999-02-17 | 2000-08-24 | Hitachi, Ltd. | Dispositif semi-conducteur et procede de fabrication associe |
| JP3871486B2 (ja) * | 1999-02-17 | 2007-01-24 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6856013B1 (en) * | 1999-02-19 | 2005-02-15 | Micron Technology, Inc. | Integrated circuit packages, ball-grid array integrated circuit packages and methods of packaging an integrated circuit |
| US6825550B2 (en) | 1999-09-02 | 2004-11-30 | Micron Technology, Inc. | Board-on-chip packages with conductive foil on the chip surface |
| US7211877B1 (en) * | 1999-09-13 | 2007-05-01 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
| US6867499B1 (en) * | 1999-09-30 | 2005-03-15 | Skyworks Solutions, Inc. | Semiconductor packaging |
| US6459147B1 (en) | 2000-03-27 | 2002-10-01 | Amkor Technology, Inc. | Attaching semiconductor dies to substrates with conductive straps |
| US6521982B1 (en) | 2000-06-02 | 2003-02-18 | Amkor Technology, Inc. | Packaging high power integrated circuit devices |
| US6720642B1 (en) * | 1999-12-16 | 2004-04-13 | Fairchild Semiconductor Corporation | Flip chip in leaded molded package and method of manufacture thereof |
| US6762067B1 (en) * | 2000-01-18 | 2004-07-13 | Fairchild Semiconductor Corporation | Method of packaging a plurality of devices utilizing a plurality of lead frames coupled together by rails |
| JP3864029B2 (ja) * | 2000-03-24 | 2006-12-27 | 松下電器産業株式会社 | 半導体パッケージ及び半導体パッケージの製造方法 |
| US6989588B2 (en) * | 2000-04-13 | 2006-01-24 | Fairchild Semiconductor Corporation | Semiconductor device including molded wireless exposed drain packaging |
| US6870254B1 (en) * | 2000-04-13 | 2005-03-22 | Fairchild Semiconductor Corporation | Flip clip attach and copper clip attach on MOSFET device |
| US6566164B1 (en) | 2000-12-07 | 2003-05-20 | Amkor Technology, Inc. | Exposed copper strap in a semiconductor package |
| US6717260B2 (en) * | 2001-01-22 | 2004-04-06 | International Rectifier Corporation | Clip-type lead frame for source mounted die |
| US6469398B1 (en) | 2001-03-29 | 2002-10-22 | Kabushiki Kaisha Toshiba | Semiconductor package and manufacturing method thereof |
| US6645791B2 (en) * | 2001-04-23 | 2003-11-11 | Fairchild Semiconductor | Semiconductor die package including carrier with mask |
| US6791172B2 (en) | 2001-04-25 | 2004-09-14 | General Semiconductor Of Taiwan, Ltd. | Power semiconductor device manufactured using a chip-size package |
| US7057273B2 (en) * | 2001-05-15 | 2006-06-06 | Gem Services, Inc. | Surface mount package |
| USD471165S1 (en) | 2001-05-15 | 2003-03-04 | Gem Services, Inc. | Surface mount package |
| USD467884S1 (en) | 2001-05-15 | 2002-12-31 | Gem Services, Inc. | Surface mount package |
| USD461170S1 (en) | 2001-05-15 | 2002-08-06 | Gem Services, Inc. | Surface mount package |
| USD461783S1 (en) | 2001-06-08 | 2002-08-20 | Gem Services, Inc. | Surface mount package |
| EP1271648A1 (en) * | 2001-06-22 | 2003-01-02 | Siliconx (Taiwan) Ltd | Power semiconductor package and method for making the same |
| USD467560S1 (en) | 2001-07-17 | 2002-12-24 | Gem Services, Inc. | Surface mount package |
| JP2003100976A (ja) * | 2001-09-27 | 2003-04-04 | Sanyo Electric Co Ltd | 半導体装置 |
| US20030064542A1 (en) * | 2001-10-02 | 2003-04-03 | Corisis David J. | Methods of packaging an integrated circuit |
| EP1316999A1 (de) * | 2001-11-28 | 2003-06-04 | Continental ISAD Electronic Systems GmbH & Co. oHG | Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen |
| US7323361B2 (en) * | 2002-03-29 | 2008-01-29 | Fairchild Semiconductor Corporation | Packaging system for semiconductor devices |
| EP1357594A1 (en) * | 2002-04-23 | 2003-10-29 | General Semiconductor of Taiwan, Ltd. | Power semiconductor device manufactured using a chip-size package |
| TW540123B (en) * | 2002-06-14 | 2003-07-01 | Siliconware Precision Industries Co Ltd | Flip-chip semiconductor package with lead frame as chip carrier |
| JP2004079760A (ja) | 2002-08-19 | 2004-03-11 | Nec Electronics Corp | 半導体装置及びその組立方法 |
| US7061077B2 (en) | 2002-08-30 | 2006-06-13 | Fairchild Semiconductor Corporation | Substrate based unmolded package including lead frame structure and semiconductor die |
| US20040080028A1 (en) | 2002-09-05 | 2004-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device with semiconductor chip mounted in package |
| DE10301091B4 (de) * | 2003-01-14 | 2015-01-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtungen |
| DE10303463B4 (de) * | 2003-01-29 | 2006-06-14 | Infineon Technologies Ag | Halbleiterbauelement mit wenigstens zwei in einem Gehäuse integrierten und durch einen gemeinsamen Kontaktbügel kontaktierten Chips |
| JP4173751B2 (ja) * | 2003-02-28 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2004349347A (ja) * | 2003-05-20 | 2004-12-09 | Rohm Co Ltd | 半導体装置 |
| US7208818B2 (en) * | 2004-07-20 | 2007-04-24 | Alpha And Omega Semiconductor Ltd. | Power semiconductor package |
| US7759775B2 (en) * | 2004-07-20 | 2010-07-20 | Alpha And Omega Semiconductor Incorporated | High current semiconductor power device SOIC package |
| US20060145319A1 (en) * | 2004-12-31 | 2006-07-06 | Ming Sun | Flip chip contact (FCC) power package |
| US20060108635A1 (en) * | 2004-11-23 | 2006-05-25 | Alpha Omega Semiconductor Limited | Trenched MOSFETS with part of the device formed on a (110) crystal plane |
| US9337132B2 (en) * | 2004-12-31 | 2016-05-10 | Alpha And Omega Semiconductor Incorporated | Methods and configuration for manufacturing flip chip contact (FCC) power package |
| US7511361B2 (en) | 2005-01-05 | 2009-03-31 | Xiaotian Zhang | DFN semiconductor package having reduced electrical resistance |
| US7884454B2 (en) * | 2005-01-05 | 2011-02-08 | Alpha & Omega Semiconductor, Ltd | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
| US7898092B2 (en) * | 2007-11-21 | 2011-03-01 | Alpha & Omega Semiconductor, | Stacked-die package for battery power management |
| US20060145312A1 (en) * | 2005-01-05 | 2006-07-06 | Kai Liu | Dual flat non-leaded semiconductor package |
| JP2006203048A (ja) * | 2005-01-21 | 2006-08-03 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| DE102005011159B4 (de) * | 2005-03-09 | 2013-05-16 | Infineon Technologies Ag | Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben |
| JP2006324320A (ja) * | 2005-05-17 | 2006-11-30 | Renesas Technology Corp | 半導体装置 |
| DE102005027356B4 (de) * | 2005-06-13 | 2007-11-22 | Infineon Technologies Ag | Halbleiterleistungsbauteilstapel in Flachleitertechnik mit oberflächenmontierbaren Außenkontakten und ein Verfahren zur Herstellung desselben |
| US20070075419A1 (en) * | 2005-09-06 | 2007-04-05 | Denso Corporation | Semiconductor device having metallic lead and electronic device having lead frame |
| US20070057368A1 (en) * | 2005-09-13 | 2007-03-15 | Yueh-Se Ho | Semiconductor package having plate interconnections |
| US7622796B2 (en) * | 2005-09-13 | 2009-11-24 | Alpha And Omega Semiconductor Limited | Semiconductor package having a bridged plate interconnection |
| US7683464B2 (en) * | 2005-09-13 | 2010-03-23 | Alpha And Omega Semiconductor Incorporated | Semiconductor package having dimpled plate interconnections |
| US20070075406A1 (en) * | 2005-09-30 | 2007-04-05 | Yueh-Se Ho | Wafer-level method for metallizing source, gate and drain contact areas of semiconductor die |
| US7285849B2 (en) * | 2005-11-18 | 2007-10-23 | Fairchild Semiconductor Corporation | Semiconductor die package using leadframe and clip and method of manufacturing |
| DE102006005420B4 (de) * | 2006-02-03 | 2010-07-15 | Infineon Technologies Ag | Stapelbares Halbleiterbauteil und Verfahren zur Herstellung desselben |
| DE102006015447B4 (de) * | 2006-03-31 | 2012-08-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit einem Leistungshalbleiterchip und Verfahren zur Herstellung desselben |
| JP5165214B2 (ja) * | 2006-06-26 | 2013-03-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
| US20080036078A1 (en) * | 2006-08-14 | 2008-02-14 | Ciclon Semiconductor Device Corp. | Wirebond-less semiconductor package |
| DE102006060484B4 (de) * | 2006-12-19 | 2012-03-08 | Infineon Technologies Ag | Halbleiterbauelement mit einem Halbleiterchip und Verfahren zur Herstellung desselben |
| US8237268B2 (en) | 2007-03-20 | 2012-08-07 | Infineon Technologies Ag | Module comprising a semiconductor chip |
| GB2451077A (en) * | 2007-07-17 | 2009-01-21 | Zetex Semiconductors Plc | Semiconductor chip package |
| MX2010003215A (es) * | 2007-11-01 | 2010-04-30 | Logined Bv | Simulacion de fractura de deposito. |
| TWI456707B (zh) * | 2008-01-28 | 2014-10-11 | 瑞薩電子股份有限公司 | 半導體裝置及其製造方法 |
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| JP5107839B2 (ja) | 2008-09-10 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8138587B2 (en) * | 2008-09-30 | 2012-03-20 | Infineon Technologies Ag | Device including two mounting surfaces |
| US8188587B2 (en) * | 2008-11-06 | 2012-05-29 | Fairchild Semiconductor Corporation | Semiconductor die package including lead with end portion |
| US8124449B2 (en) | 2008-12-02 | 2012-02-28 | Infineon Technologies Ag | Device including a semiconductor chip and metal foils |
| US20100164078A1 (en) * | 2008-12-31 | 2010-07-01 | Ruben Madrid | Package assembly for semiconductor devices |
| JP5621217B2 (ja) * | 2009-06-11 | 2014-11-12 | シンフォニアテクノロジー株式会社 | 電子モジュールの製造方法及び電子モジュール並びに車両 |
| US8164199B2 (en) * | 2009-07-31 | 2012-04-24 | Alpha and Omega Semiconductor Incorporation | Multi-die package |
| US9257375B2 (en) | 2009-07-31 | 2016-02-09 | Alpha and Omega Semiconductor Inc. | Multi-die semiconductor package |
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-
1998
- 1998-06-02 US US09/089,310 patent/US6249041B1/en not_active Expired - Lifetime
-
1999
- 1999-05-22 DE DE69940386T patent/DE69940386D1/de not_active Expired - Lifetime
- 1999-05-22 EP EP09001680A patent/EP2058857A3/en not_active Withdrawn
- 1999-05-22 EP EP10013074A patent/EP2306515A3/en not_active Withdrawn
- 1999-05-22 EP EP10013073A patent/EP2306513A3/en not_active Withdrawn
- 1999-05-22 EP EP99110093A patent/EP0962975B1/en not_active Expired - Lifetime
- 1999-05-27 TW TW088108784A patent/TW520541B/zh not_active IP Right Cessation
- 1999-05-31 JP JP15208099A patent/JP4991042B2/ja not_active Expired - Lifetime
- 1999-06-02 KR KR1019990020146A patent/KR100363776B1/ko not_active Expired - Fee Related
-
2009
- 2009-09-14 JP JP2009211270A patent/JP5442368B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP2306513A3 (en) | 2011-10-12 |
| TW520541B (en) | 2003-02-11 |
| EP0962975A3 (en) | 2000-08-16 |
| KR20000005823A (ko) | 2000-01-25 |
| US6249041B1 (en) | 2001-06-19 |
| EP0962975A2 (en) | 1999-12-08 |
| EP2306515A3 (en) | 2011-10-26 |
| JP2009302564A (ja) | 2009-12-24 |
| EP2058857A3 (en) | 2011-05-18 |
| JP4991042B2 (ja) | 2012-08-01 |
| EP0962975B1 (en) | 2009-02-11 |
| JP5442368B2 (ja) | 2014-03-12 |
| EP2306515A2 (en) | 2011-04-06 |
| KR100363776B1 (ko) | 2002-12-11 |
| EP2058857A2 (en) | 2009-05-13 |
| JPH11354702A (ja) | 1999-12-24 |
| EP2306513A2 (en) | 2011-04-06 |
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