DE69939524D1 - Leistungsbauelement mit verbindungen - Google Patents
Leistungsbauelement mit verbindungenInfo
- Publication number
- DE69939524D1 DE69939524D1 DE69939524T DE69939524T DE69939524D1 DE 69939524 D1 DE69939524 D1 DE 69939524D1 DE 69939524 T DE69939524 T DE 69939524T DE 69939524 T DE69939524 T DE 69939524T DE 69939524 D1 DE69939524 D1 DE 69939524D1
- Authority
- DE
- Germany
- Prior art keywords
- connections
- power element
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9813542A FR2785090B1 (fr) | 1998-10-23 | 1998-10-23 | Composant de puissance portant des interconnexions |
PCT/FR1999/002576 WO2000025363A1 (fr) | 1998-10-23 | 1999-10-22 | Composant de puissance portant des interconnexions |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69939524D1 true DE69939524D1 (de) | 2008-10-23 |
Family
ID=9532106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69939524T Expired - Fee Related DE69939524D1 (de) | 1998-10-23 | 1999-10-22 | Leistungsbauelement mit verbindungen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6583487B1 (de) |
EP (1) | EP1040523B1 (de) |
JP (1) | JP2002528914A (de) |
DE (1) | DE69939524D1 (de) |
FR (1) | FR2785090B1 (de) |
WO (1) | WO2000025363A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US7719054B2 (en) * | 2006-05-31 | 2010-05-18 | Advanced Analogic Technologies, Inc. | High-voltage lateral DMOS device |
DE102004012884B4 (de) * | 2004-03-16 | 2011-07-21 | IXYS Semiconductor GmbH, 68623 | Leistungs-Halbleiterbauelement in Planartechnik |
US7494876B1 (en) | 2005-04-21 | 2009-02-24 | Vishay Siliconix | Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same |
DE102005047102B3 (de) * | 2005-09-30 | 2007-05-31 | Infineon Technologies Ag | Halbleiterbauelement mit pn-Übergang |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
KR101728363B1 (ko) | 2010-03-02 | 2017-05-02 | 비쉐이-실리코닉스 | 듀얼 게이트 디바이스의 구조 및 제조 방법 |
JP2014518017A (ja) | 2011-05-18 | 2014-07-24 | ビシャイ‐シリコニックス | 半導体デバイス |
CN107078161A (zh) | 2014-08-19 | 2017-08-18 | 维西埃-硅化物公司 | 电子电路 |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3414780A (en) * | 1966-01-06 | 1968-12-03 | Int Rectifier Corp | High voltage semiconductor device with electrical gradient-reducing groove |
US3466510A (en) * | 1967-01-07 | 1969-09-09 | Telefunken Patent | Integrated graetz rectifier circuit |
US3559006A (en) * | 1968-04-11 | 1971-01-26 | Tokyo Shibaura Electric Co | Semiconductor device with an inclined inwardly extending groove |
US3821782A (en) * | 1971-01-14 | 1974-06-28 | J Hutson | High voltage semiconductor device with plural grooves |
JPS55133569A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Semiconductor device |
JPS57196570A (en) | 1981-05-28 | 1982-12-02 | Toshiba Corp | Thyristor |
JPH01293661A (ja) * | 1988-05-23 | 1989-11-27 | Nec Corp | 半導体装置 |
JPH0360A (ja) * | 1989-05-26 | 1991-01-07 | Haruchika Seimitsu:Kk | ベッド装置 |
JP2876216B2 (ja) * | 1989-05-29 | 1999-03-31 | 大王製紙株式会社 | 吸収性物品の複数層を有する表面シートの製造方法 |
JPH03235367A (ja) | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
DE69215858T2 (de) | 1992-04-17 | 1997-05-15 | Sgs Thomson Microelectronics | Junction-isoliertes, hochspannungsintegriertes MOS-Bauelement |
TW218424B (de) * | 1992-05-21 | 1994-01-01 | Philips Nv | |
US5430324A (en) | 1992-07-23 | 1995-07-04 | Siliconix, Incorporated | High voltage transistor having edge termination utilizing trench technology |
JP2812093B2 (ja) | 1992-09-17 | 1998-10-15 | 株式会社日立製作所 | プレーナ接合を有する半導体装置 |
JP3347188B2 (ja) | 1993-07-30 | 2002-11-20 | 日本ペイント株式会社 | 感光性レジストの電着塗装方法 |
JP3959125B2 (ja) * | 1994-09-14 | 2007-08-15 | 株式会社東芝 | 半導体装置 |
US5665633A (en) * | 1995-04-06 | 1997-09-09 | Motorola, Inc. | Process for forming a semiconductor device having field isolation |
GB2314206A (en) * | 1996-06-13 | 1997-12-17 | Plessey Semiconductors Ltd | Preventing voltage breakdown in semiconductor devices |
GB9700923D0 (en) | 1997-01-17 | 1997-03-05 | Philips Electronics Nv | Semiconductor devices |
US6023078A (en) * | 1998-04-28 | 2000-02-08 | North Carolina State University | Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability |
-
1998
- 1998-10-23 FR FR9813542A patent/FR2785090B1/fr not_active Expired - Fee Related
-
1999
- 1999-10-19 US US09/421,130 patent/US6583487B1/en not_active Expired - Lifetime
- 1999-10-22 WO PCT/FR1999/002576 patent/WO2000025363A1/fr active IP Right Grant
- 1999-10-22 EP EP99950813A patent/EP1040523B1/de not_active Expired - Lifetime
- 1999-10-22 DE DE69939524T patent/DE69939524D1/de not_active Expired - Fee Related
- 1999-10-22 JP JP2000578850A patent/JP2002528914A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6583487B1 (en) | 2003-06-24 |
JP2002528914A (ja) | 2002-09-03 |
EP1040523A1 (de) | 2000-10-04 |
EP1040523B1 (de) | 2008-09-10 |
WO2000025363A1 (fr) | 2000-05-04 |
FR2785090A1 (fr) | 2000-04-28 |
FR2785090B1 (fr) | 2001-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69919149D1 (de) | Amidin-verbindungen | |
DE69937668D1 (de) | Elektrolumineszentes element | |
DE59912676D1 (de) | Leistungshalbleitermodul | |
DE69813974D1 (de) | Programmierbares gatterfeld mit erhöhter leistung | |
DE69931831D1 (de) | Kraftanlage mit kombiniertem Kreislauf | |
DE69943196D1 (de) | Halbleiter-Leistungs-Modul | |
NO990511D0 (no) | Sidebr°nn-tilkopling | |
DE69616251D1 (de) | Halbleiteranordnung mit Halbleiterleistungselementen | |
DE69935525D1 (de) | Heizelement | |
DE19981515D2 (de) | Photovoltaikeinrichtung | |
DE69931695D1 (de) | Geldautomat mit front- und heck-beschickbaren Konfigurationen | |
DE59813198D1 (de) | Kraftsensor | |
DE69916207D1 (de) | Tintenstrahlaufzeichnungselement | |
DE69939524D1 (de) | Leistungsbauelement mit verbindungen | |
DE59909275D1 (de) | Schaltungsanordnung mit Strom-Digital-Analog-Konvertern | |
DE69839598D1 (de) | Kommutator mit verbesserten segmentverbindungen | |
DE59913414D1 (de) | Smartpower-bauelement | |
DE69934937D1 (de) | Integrierte Schaltung mit Ausgangstreiber | |
DE60014306D1 (de) | Tintenstrahlaufzeichnungselement | |
DE69836751D1 (de) | Dienste mit rufunabhängigen modulen | |
ATA16298A (de) | Heizelement | |
DE69909620D1 (de) | Selbstüberprüfendes ausgangsmodul | |
DE60017345D1 (de) | Tintenstrahlaufzeichnungselement | |
DE69934436D1 (de) | Halbleiter-energiesensor | |
DE69841667D1 (de) | Halbleiteranordnungen mit MOS-Gatter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |