DE19983419T1 - Elektrisch isoliertes Leistungshalbleiter-Package - Google Patents

Elektrisch isoliertes Leistungshalbleiter-Package

Info

Publication number
DE19983419T1
DE19983419T1 DE19983419T DE19983419T DE19983419T1 DE 19983419 T1 DE19983419 T1 DE 19983419T1 DE 19983419 T DE19983419 T DE 19983419T DE 19983419 T DE19983419 T DE 19983419T DE 19983419 T1 DE19983419 T1 DE 19983419T1
Authority
DE
Germany
Prior art keywords
semiconductor package
power semiconductor
electrically insulated
insulated power
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983419T
Other languages
English (en)
Other versions
DE19983419B3 (de
Inventor
Kang Rim Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IXYS LLC
Original Assignee
IXYS LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IXYS LLC filed Critical IXYS LLC
Publication of DE19983419T1 publication Critical patent/DE19983419T1/de
Withdrawn legal-status Critical Current

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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
DE19983419T 1998-07-31 1999-07-27 Elektrisch isoliertes Leistungshalbleiter-Package Withdrawn DE19983419T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/134,664 US6404065B1 (en) 1998-07-31 1998-07-31 Electrically isolated power semiconductor package
PCT/US1999/017038 WO2000007238A1 (en) 1998-07-31 1999-07-27 Electrically isolated power semiconductor package

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DE19983419T1 true DE19983419T1 (de) 2001-09-13

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DE19983419.9A Expired - Lifetime DE19983419B3 (de) 1998-07-31 1999-07-27 Elektrisch isoliertes verpacktes Leistungshalbleiterbauelement und Verfahren zur Herstellung desselben

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US (3) US6404065B1 (de)
EP (1) EP1099252A4 (de)
JP (1) JP2002521843A (de)
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DE (2) DE19983419T1 (de)
GB (1) GB2358960B (de)
WO (1) WO2000007238A1 (de)

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Publication number Publication date
GB0101986D0 (en) 2001-03-14
US6404065B1 (en) 2002-06-11
GB2358960A (en) 2001-08-08
US6710463B2 (en) 2004-03-23
EP1099252A4 (de) 2006-05-31
US6534343B2 (en) 2003-03-18
KR100685253B1 (ko) 2007-02-22
US20020017714A1 (en) 2002-02-14
GB2358960B (en) 2003-08-13
DE19983419B3 (de) 2018-07-05
EP1099252A1 (de) 2001-05-16
KR20010071079A (ko) 2001-07-28
KR20070007197A (ko) 2007-01-12
US20010018235A1 (en) 2001-08-30
WO2000007238A1 (en) 2000-02-10
JP2002521843A (ja) 2002-07-16
KR100849914B1 (ko) 2008-08-04

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