KR100685253B1 - 패키지형 전력 반도체 장치 - Google Patents
패키지형 전력 반도체 장치 Download PDFInfo
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- KR100685253B1 KR100685253B1 KR1020017001329A KR20017001329A KR100685253B1 KR 100685253 B1 KR100685253 B1 KR 100685253B1 KR 1020017001329 A KR1020017001329 A KR 1020017001329A KR 20017001329 A KR20017001329 A KR 20017001329A KR 100685253 B1 KR100685253 B1 KR 100685253B1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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Abstract
Description
본 발명은 패키지 내측에 있는 다이의 전위와 패키지의 금속 후방측 간에 전기 절연을 갖는 패키지형 전력 반도체 장치를 제공한다. 전력 반도체 다이는 직접 결합식 구리(DBC) 기판 상에 장착된다. 전력 반도체 다이는 솔더 또는 다른 다이 부착 수단을 사용하여 장착될 수도 있다. 패키지의 도선도 또한 DBC 기판에 솔더링된다. 소정의 실시예에 있어서, 모든 도선은 DBC 기판 상의 접속 패드에 솔더링된다.
한 양태에 있어서, 본 발명은, 직접 결합식 구리(DBC) 기판의 제1 구리층에 부착된 전력 반도체 다이와,
상기 제1 구리층에 전기적으로 결합된 하나 이상의 도선과,
상기 전력 반도체 다이와 적어도 제1 구리층을 둘러싸고, DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 밀봉체
를 구비하며, 상기 제2 구리층은 제1 구리층으로부터 전기적으로 절연되어 도선의 일부를 노출된 상태로 남겨놓는 것인 패키지형 전력 반도체 장치를 제공한다.
바람직하게는, 상기 전력 반도체 다이는 제1 구리층에 솔더링된다.
바람직하게는, 하나 이상의 도선은 제1 구리층에 솔더링된다.
바람직하게는, 제1 구리층내에 패터닝되는 접점 패드에 솔더링되고, 하나 이상의 도선으로부터 전기적으로 절연되는 제2 도선을 더 구비한다.
바람직하게는, 상기 전력 반도체 다이는 40 볼트 이상에서 동작하도록 구성된다.
바람직하게는, 상기 전력 반도체 다이는 3 단자 장치이다.
바람직하게는, 상기 3 단자 장치는 절연 게이트 양극 트랜지스터이다.
바람직하게는, 상기 3 단자 장치는 전계 효과 트랜지스터이다.
바람직하게는, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 적어도 약 3,000 볼트의 절연부를 제공한다.
바람직하게는, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 알루미나 세라믹층을 구비한다.
바람직하게는, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 질화알루미늄층을 구비한다.
바람직하게는, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 산화베릴륨층을 구비한다.
바람직하게는, 상기 패키지형 전력 반도체 장치는 TO-247 패키지 외형에 합치한다.
바람직하게는, 상기 패키지형 전력 반도체 장치는 TO-264 패키지 외형에 합치한다.
다른 양태에 있어서, 본 발명은, TO-247 패키지 외형에 합치하는 패키지형 전력 반도체 장치로서,
약 40 볼트 이상에서 동작하도록 구성되며 직접 결합식 구리(DBC) 기판의 제1 구리층에 솔더링되는 전력 반도체 다이와,
상기 제1 구리층에 솔더링되어 전력 반도체 다이의 제1 단자에 전기적으로 결합되는 제1 도선과,
전력 반도체 다이의 제2 단자에 와이어 결합되는 제2 도선과,
전력 반도체 다이의 제3 단자에 와이어 결합되는 제3 도선과,
전력 반도체 다이, 제1 구리층, 제1 도선의 일부, 제2 도선의 일부, 제3 도선의 일부 및 와이어 결합부를 적어도 둘러싸고, DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 밀봉체
를 구비하며, 제2 구리층과 제1 구리층 사이에 있는 세라믹층은 제1 구리층과 제2 구리층 간에 약 3,000 볼트 이상의 절연부를 제공하는 것인 TO-247 패키지 외형에 합치하는 패키지형 전력 반도체 장치를 제공한다.
또 다른 양태에 있어서, 본 발명은, 직접 결합식 구리(DBC) 기판을 조립 고정물에 배치하는 단계와,
솔더 프리폼을 DBC 기판 상에 배치하는 단계와,
도선 프레임을 솔더 프레임 상에 배치하는 단계와,
전력 반도체 다이를 솔더 프리폼 상에 배치하는 단계, 그리고
조립 고정물에 열을 가하여 도선 프레임과 전력 반도체 다이를 DBC 기판에 솔더링하는 단계를 포함하는 것인 패키지형 전력 반도체 장치의 제조 방법을 제공한다.
바람직하게는, DBC 기판과 전력 반도체 다이를 밀봉하는 단계와,
도선 프레임을 트리밍하여 패키지형 전력 반도체 장치의 도선들을 분리시키는 단계를 더 포함한다.
바람직하게는, 다수의 DBC 기판, 다수의 솔더 프리폼 및 다수의 전력 반도체 다이를 조립 고정물에 배치한다.
바람직하게는, 다수의 전력 반도체 다이는 2개 이상의 장치 타입을 포함한다.
바람직하게는, 상기 조립 고정물은 그라파이트(graphite)를 포함한다.
또 다른 양태에 있어서, 본 발명은, 후방측 금속층과 전력 반도체 다이를 구비하는 패키지형 전력 반도체 장치와, 히트 싱크를 구비하며,
상기 패키지형 전력 반도체 장치의 후방측 금속층은 히트 싱크에 솔더링되고 후방측 금속층은 전력 반도체 다이로부터 전기적으로 절연되는 것인 전자 보조 조립체를 제공한다.
바람직하게는, 상기 히트 싱크는 전력 반도체 다이로부터 약 3,000 볼트 이상 절연된다.
바람직하게는, 상기 패키지형 전력 반도체 장치는 직접 결합식 구리 기판을 포함한다.
Claims (23)
- 패키지형 전력 반도체 장치에 있어서,대향된 제1 구리층과 제2 구리층을 갖는 직접 결합식 구리(DBC) 기판과,상기 제1 구리층에 부착된 단 하나의 반도체 다이와,상기 제1 구리층에 전기적으로 결합된 하나 이상의 도선과,상기 단 하나의 반도체 다이와 적어도 상기 제1 구리층을 둘러싸고, 상기 DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 것인 밀봉체로서, 상기 제2 구리층은 상기 제1 구리층으로부터 전기적으로 절연되고 상기 도선의 일부를 노출된 상태로 남겨놓는 것인 밀봉체를 구비하고, 상기 단 하나의 반도체 다이는 전력 반도체 다이인 것인 패키지형 전력 반도체 장치.
- TO-247 아웃라인(outline)을 따르는 패키지형 전력 반도체 장치에 있어서,대향된 제1 구리층과 제2 구리층을 갖는 직접 결합식 구리(DBC) 기판과,상기 제1 구리층에 솔더링되어 약 40 볼트 이상에서 동작하도록 구성된 단 하나의 반도체 다이와,상기 제1 구리층에 솔더링되어 상기 단 하나의 반도체 다이의 제1 단자에 전기적으로 결합되는 제1 도선과,상기 단 하나의 반도체 다이의 제2 단자에 와이어 결합되는 제2 도선과,상기 단 하나의 반도체 다이의 제3 단자에 와이어 결합되는 제3 도선과,적어도 상기 단 하나의 반도체 다이, 상기 제1 구리층, 상기 제1 도선의 일부, 상기 제2 도선의 일부, 상기 제3 도선의 일부, 및 와이어 결합부를 둘러싸고, DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 것인 밀봉체로서, 상기 제2 구리층과 제1 구리층 사이에 있는 세라믹층이 상기 제1 구리층과 제2 구리층 간에 약 3,000 볼트 이상의 절연을 제공하는 것인 밀봉체를 구비하고, 상기 단 하나의 반도체 다이는 전력 반도체 다이인 것인 패키지형 전력 반도체 장치.
- 패키지형 전력 반도체 장치에 있어서,대향된 제1 구리층과 제2 구리층을 갖는 직접 결합식 구리(DBC) 기판과;상기 제1 구리층에 부착된 단 하나의 반도체 다이와;상기 단 하나의 반도체 다이와 적어도 상기 제1 구리층을 둘러싸고, 대향된 제1 주표면 및 제2 주표면과, 상기 제1 주표면과 제2 주표면을 연결하는 복수 개의 측면으로 형성되는 밀봉체와;상기 제1 구리층 또는 단 하나의 반도체 다이에 전기적으로 결합된 복수 개의 도선을 구비하고, 상기 밀봉체는 상기 도선들의 일부분을 둘러싸며, 상기 제2 구리층의 일부는 상기 제1 주표면 및 제2 주표면 중 하나를 통해 노출되고, 상기 도선은 상기 밀봉체의 측면 중 단 하나의 측면을 통해서만 연장되며, 상기 단 하나의 반도체 다이는 전력 반도체 다이인 것인 패키지형 전력 반도체 장치.
- 패키지형 전력 반도체 장치에 있어서,대향된 제1 금속층과 제2 금속층을 갖는 직접 결합식 기판으로서, 상기 제1 금속층은 거의 전체 기판 위에서 연속하여 연장되는 것인 직접 결합식 기판과,상기 제1 금속층에 부착된 전력 반도체 다이와,상기 제1 금속층에 전기적으로 결합된 하나 이상의 도선과,상기 전력 반도체 다이와 적어도 제1 금속층을 둘러싸고, 상기 직접 결합식 기판의 제2 금속층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 것인 밀봉체로서, 상기 제2 금속층은 상기 제1 금속층으로부터 전기적으로 절연되고 상기 도선들의 일부분을 노출된 상태로 남겨놓는 것인 밀봉체를 구비하는, 패키지형 전력 반도체 장치.
- 패키지형 전력 반도체 장치로서,대향된 제1 금속층과 제2 금속층을 갖는 직접 결합식 기판으로서, 상기 제1 금속층에는 제어용 반도체 다이가 없고, 상기 제1 금속층과 제2 금속층은 거의 동일한 영역을 덮는 것인 직접 결합식 기판과,상기 제1 금속층에 부착된 전력 반도체 다이와,상기 제1 금속층에 전기적으로 결합된 하나 이상의 도선과,상기 전력 반도체 다이와 적어도 상기 제1 금속층을 둘러싸고, 상기 직접 결합식 기판의 제2 금속층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는 것인 밀봉체로서, 상기 제2 금속층은 상기 제1 금속층으로부터 전기적으로 절연되고 상기 도선들의 일부분을 노출된 상태로 남겨놓는 것인 밀봉체를 구비하는, 패키지형 전력 반도체 장치.
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KR1020067024873A KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
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US09/134,664 | 1998-07-31 | ||
US09/134,664 US6404065B1 (en) | 1998-07-31 | 1998-07-31 | Electrically isolated power semiconductor package |
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KR1020017001329A KR100685253B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치 |
KR1020067024873A KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
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US (3) | US6404065B1 (ko) |
EP (1) | EP1099252A4 (ko) |
JP (1) | JP2002521843A (ko) |
KR (2) | KR100685253B1 (ko) |
DE (2) | DE19983419T1 (ko) |
GB (1) | GB2358960B (ko) |
WO (1) | WO2000007238A1 (ko) |
Cited By (9)
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KR20200139618A (ko) | 2019-06-04 | 2020-12-14 | 제엠제코(주) | 반도체 패키지 |
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KR20200145091A (ko) | 2019-06-20 | 2020-12-30 | 제엠제코(주) | 반도체 패키지 |
KR102199360B1 (ko) | 2019-06-20 | 2021-01-06 | 제엠제코(주) | 반도체 패키지 |
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KR20220020751A (ko) | 2020-08-12 | 2022-02-21 | 제엠제코(주) | 커플드 반도체 패키지 |
KR102228938B1 (ko) | 2020-08-12 | 2021-03-17 | 제엠제코(주) | 커플드 반도체 패키지 |
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Also Published As
Publication number | Publication date |
---|---|
US6710463B2 (en) | 2004-03-23 |
GB2358960B (en) | 2003-08-13 |
KR20070007197A (ko) | 2007-01-12 |
GB0101986D0 (en) | 2001-03-14 |
WO2000007238A1 (en) | 2000-02-10 |
JP2002521843A (ja) | 2002-07-16 |
US6534343B2 (en) | 2003-03-18 |
DE19983419T1 (de) | 2001-09-13 |
EP1099252A4 (en) | 2006-05-31 |
DE19983419B3 (de) | 2018-07-05 |
KR100849914B1 (ko) | 2008-08-04 |
US6404065B1 (en) | 2002-06-11 |
US20010018235A1 (en) | 2001-08-30 |
EP1099252A1 (en) | 2001-05-16 |
KR20010071079A (ko) | 2001-07-28 |
GB2358960A (en) | 2001-08-08 |
US20020017714A1 (en) | 2002-02-14 |
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