KR20010071079A - 패키지형 전력 반도체 장치 - Google Patents
패키지형 전력 반도체 장치 Download PDFInfo
- Publication number
- KR20010071079A KR20010071079A KR1020017001329A KR20017001329A KR20010071079A KR 20010071079 A KR20010071079 A KR 20010071079A KR 1020017001329 A KR1020017001329 A KR 1020017001329A KR 20017001329 A KR20017001329 A KR 20017001329A KR 20010071079 A KR20010071079 A KR 20010071079A
- Authority
- KR
- South Korea
- Prior art keywords
- power semiconductor
- semiconductor device
- copper layer
- packaged
- dbc
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (23)
- "직접 결합식 구리(DBC)" 기판의 제1 구리층에 부착된 전력 반도체 다이와,상기 제1 구리층에 전기적으로 결합된 하나 이상의 도선과,전력 반도체 다이와 적어도 제1 구리층을 둘러싸고, DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하며, 도선의 일부를 노출된 상태로 남겨놓는 밀봉체를 구비하며, 상기 제2 구리층은 제1 구리층으로부터 전기적으로 절연되는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 전력 반도체 다이는 제1 구리층에 솔더링되는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 하나 이상의 도선은 제1 구리층에 솔더링되는 것인 패키지형 전력 반도체 장치.
- 제3항에 있어서, 제1 구리층내에 패터닝되는 접점 패드에 솔더링되고, 하나 이상의 도선으로부터 전기적으로 절연되는 제2 도선을 더 구비하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 전력 반도체 다이는 40 볼트 이상에서 작동하도록 구성되는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 전력 반도체 다이는 3개 단자 장치인 것인 패키지형 전력 반도체 장치.
- 제6항에 있어서, 상기 3개 단자 장치는 절연 게이트 양극 트랜지스터인 것인 패키지형 전력 반도체 장치.
- 제6항에 있어서, 상기 3개 단자 장치는 전계 효과 트랜지스터인 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 적어도 약 3,000 볼트의 절연부를 제공하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 알루미나 세라믹층을 구비하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 질화 알루미늄층을 구비하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 DBC 기판은 제1 구리층과 제2 구리층 간에 산화 베릴륨층을 구비하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 패키지형 전력 반도체 장치는 TO-247 패키지 형태에 일치하는 것인 패키지형 전력 반도체 장치.
- 제1항에 있어서, 상기 패키지형 전력 반도체 장치는 TO-264 패키지 형태에 일치하는 것인 패키지형 전력 반도체 장치.
- TO-247 패키지 형태에 일치하는 패키지형 전력 반도체 장치로서,약 40 볼트 이상에서 작동하도록 구성되며 "직접 결합식 구리(DBC)" 기판의 제1 구리층에 솔더링되는 전력 반도체 다이와,제1 구리층에 솔더링되어 전력 반도체 다이의 제1 단자에 전기적으로 결합되는 제1 도선과,전력 반도체 다이의 제2 단자에 와이어 결합되는 제2 도선과,전력 반도체 다이의 제3 단자에 와이어 결합되는 제3 도선과,전력 반도체 다이, 제1 구리층, 제1 도선의 일부, 제2 도선의 일부, 제3 도선의 일부 및 와이어 결합부를 적어도 둘러싸고, DBC 기판의 제2 구리층의 적어도 일부를 노출된 상태로 남겨놓아 패키지형 전력 반도체 장치의 후방측을 형성하는밀봉체를 구비하며, 제2 구리층과 제1 구리층 사이에 있는 세라믹층은 제1 구리층과 제2 구리층 간에 약 3,000볼트 이상의 절연부를 제공하는 것인 TO-247 패키지 형태에 일치하는 패키지형 전력 반도체 장치.
- "직접 결합식 구리(DBC)" 기판을 조립 고정물에 배치하는 단계와,솔더 프리폼을 DBC 기판 상에 배치하는 단계와,도선 프레임을 솔더 프레임 상에 배치하는 단계와,전력 반도체 다이를 솔더 프리폼 상에 배치하는 단계, 그리고조립 고정물을 연소시켜 도선 프레임과 전력 반도체 다이를 DBC 기판에 솔더링하는 단계를 구비하는 것인 패키지형 전력 반도체 장치의 제조 방법.
- 제16항에 있어서, DBC 기판과 전력 반도체 다이를 밀봉하는 단계와,도선 프레임을 트리밍하여 패키지형 전력 반도체 장치의 도선들을 분리시키는 단계를 더 구비하는 것인 패키지형 전력 반도체 장치의 제조 방법.
- 제16항에 있어서, 다수의 DBC 기판, 다수의 솔더 프리폼 및 다수의 전력 반도체 다이스를 조립 고정물에 배치하는 것인 패키지형 전력 반도체 장치의 제조 방법.
- 제18항에 있어서, 다수의 전력 반도체 다이tm는 2개 이상의 장치 타입을 포함하는 것인 패키지형 전력 반도체 장치의 제조 방법.
- 제16항에 있어서, 상기 조립 고정물은 흑연을 포함하는 것인 패키지형 전력 반도체 장치의 제조 방법.
- 후방측 금속층과 전력 반도체 다이를 구비하는 패키지형 전력 반도체 장치와, 히트 싱크를 구비하며,상기 패키지형 전력 반도체 장치의 후방측 금속층은 히트 싱크에 솔더링되고 후방측 금속층은 전력 반도체 다이로부터 전기적으로 절연되는 것인 전자 보조 조립체.
- 제21항에 있어서, 상기 히트 싱크는 전력 반도체 다이로부터 약 3,000 볼트 이상 절연되는 것인 전자 보조 조립체.
- 제21항에 있어서, 상기 패키지형 전력 반도체 장치는 직접 결합식 구리 기판을 포함하는 것인 전자 보조 조립체.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067024873A KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/134,664 US6404065B1 (en) | 1998-07-31 | 1998-07-31 | Electrically isolated power semiconductor package |
US09/134,664 | 1998-07-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067024873A Division KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010071079A true KR20010071079A (ko) | 2001-07-28 |
KR100685253B1 KR100685253B1 (ko) | 2007-02-22 |
Family
ID=22464385
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067024873A KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
KR1020017001329A KR100685253B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067024873A KR100849914B1 (ko) | 1998-07-31 | 1999-07-27 | 패키지형 전력 반도체 장치의 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (3) | US6404065B1 (ko) |
EP (1) | EP1099252A4 (ko) |
JP (1) | JP2002521843A (ko) |
KR (2) | KR100849914B1 (ko) |
DE (2) | DE19983419B3 (ko) |
GB (1) | GB2358960B (ko) |
WO (1) | WO2000007238A1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7151311B2 (en) | 2002-11-11 | 2006-12-19 | Mitsubishi Denki Kabushiki Kaisha | Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer |
KR100799562B1 (ko) * | 2002-03-25 | 2008-01-31 | 페어차일드코리아반도체 주식회사 | 반도체 전력 모듈 및 그 제조방법 |
KR101371956B1 (ko) * | 2007-06-21 | 2014-03-07 | 엘지이노텍 주식회사 | Dcb 기판 모듈 |
US9524936B2 (en) | 2014-10-16 | 2016-12-20 | Hyundai Motor Company | Power semiconductor module and method for manufacturing the same |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331763B1 (en) * | 1998-04-15 | 2001-12-18 | Tyco Electronics Corporation | Devices and methods for protection of rechargeable elements |
US6404065B1 (en) * | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
JP4629842B2 (ja) * | 2000-09-29 | 2011-02-09 | 古河電気工業株式会社 | 光モジュールの製造方法及び光モジュール |
US6583505B2 (en) * | 2001-05-04 | 2003-06-24 | Ixys Corporation | Electrically isolated power device package |
US6727585B2 (en) | 2001-05-04 | 2004-04-27 | Ixys Corporation | Power device with a plastic molded package and direct bonded substrate |
DE10122191A1 (de) * | 2001-05-08 | 2002-08-22 | Infineon Technologies Ag | Halbleiterbauelement mit einem Halbleiterkörper und einem Gehäuse |
DE10125697B4 (de) | 2001-05-25 | 2019-01-03 | Infineon Technologies Ag | Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls |
KR100411254B1 (ko) * | 2001-06-04 | 2003-12-18 | 삼성전기주식회사 | Smd 패키지의 리드융착방법 |
JP4540884B2 (ja) * | 2001-06-19 | 2010-09-08 | 三菱電機株式会社 | 半導体装置 |
JP3910383B2 (ja) * | 2001-07-17 | 2007-04-25 | 株式会社日立製作所 | パワーモジュールおよびインバータ |
US6670216B2 (en) * | 2001-10-31 | 2003-12-30 | Ixys Corporation | Method for manufacturing a power semiconductor device and direct bonded substrate thereof |
US20030183369A1 (en) * | 2002-04-02 | 2003-10-02 | John Makaran | Heat sink and method of removing heat from power electronics components |
KR100902766B1 (ko) * | 2002-09-27 | 2009-06-15 | 페어차일드코리아반도체 주식회사 | 절연성 세라믹 히트 싱크를 갖는 디스크리트 패키지 |
US7129577B2 (en) * | 2003-02-27 | 2006-10-31 | Power-One, Inc. | Power supply packaging system |
DE10319900A1 (de) * | 2003-04-29 | 2004-11-25 | Infineon Technologies Ag | Optoelektronische Sende- und/oder Empfangsanordnung |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
KR20050025728A (ko) * | 2003-09-08 | 2005-03-14 | 삼성에스디아이 주식회사 | 히트싱크 및 이를 구비한 디스플레이 패널 |
JP4461268B2 (ja) * | 2004-03-30 | 2010-05-12 | Dowaメタルテック株式会社 | 半導体装置部品およびその製造方法ならびにこれを用いた半導体装置 |
US7327024B2 (en) * | 2004-11-24 | 2008-02-05 | General Electric Company | Power module, and phase leg assembly |
US7547964B2 (en) * | 2005-04-25 | 2009-06-16 | International Rectifier Corporation | Device packages having a III-nitride based power semiconductor device |
DE102005061016B4 (de) * | 2005-12-19 | 2018-12-06 | Infineon Technologies Ag | Leistungshalbleitermodul, Verfahren zu seiner Herstellung und Verwendung in einem Schaltnetzteil |
US8131860B1 (en) | 2006-03-30 | 2012-03-06 | Emc Corporation | Serialization and deserialization |
US20070275540A1 (en) * | 2006-05-24 | 2007-11-29 | Hackitt Dale A | Backside via formation prior to die attachment |
US8198712B2 (en) * | 2006-06-07 | 2012-06-12 | International Rectifier Corporation | Hermetically sealed semiconductor device module |
DE102006027104B3 (de) * | 2006-06-09 | 2007-08-23 | Fpe Fischer Gmbh | Verbindungsbox und Verfahren zum Schutz und Überwachung von einzelnen Solar-Panels vor Überhitzung |
JP2007335632A (ja) * | 2006-06-15 | 2007-12-27 | Toyota Industries Corp | 半導体装置 |
US8269338B2 (en) * | 2006-08-10 | 2012-09-18 | Vishay General Semiconductor Llc | Semiconductor device having improved heat dissipation capabilities |
US8198709B2 (en) * | 2006-10-18 | 2012-06-12 | Vishay General Semiconductor Llc | Potted integrated circuit device with aluminum case |
CN201011655Y (zh) * | 2007-01-10 | 2008-01-23 | 上海凯虹科技电子有限公司 | 一种大功率半导体器件的框架 |
DE102007014789B3 (de) * | 2007-03-28 | 2008-11-06 | Ixys Ch Gmbh | Anordnung mindestens eines Leistungshalbleitermoduls und einer Leiterplatte und Leistungshalbleitermodul |
US7586179B2 (en) * | 2007-10-09 | 2009-09-08 | Fairchild Semiconductor Corporation | Wireless semiconductor package for efficient heat dissipation |
DE102007051870A1 (de) * | 2007-10-30 | 2009-05-07 | Robert Bosch Gmbh | Modulgehäuse und Verfahren zur Herstellung eines Modulgehäuses |
US20090286286A1 (en) * | 2007-11-06 | 2009-11-19 | Ambergen , Inc. | Methods for controlling amplification |
US8796837B2 (en) | 2009-03-03 | 2014-08-05 | Ixys Corporation | Lead and lead frame for power package |
US8455987B1 (en) * | 2009-06-16 | 2013-06-04 | Ixys Corporation | Electrically isolated power semiconductor package with optimized layout |
US20110278706A1 (en) * | 2010-05-11 | 2011-11-17 | iQXPRZ Power Inc. | Power Electronic Device Package |
TWI425907B (zh) * | 2010-09-21 | 2014-02-01 | Delta Electronics Inc | 電子元件和散熱裝置之組合結構及其絕緣元件 |
JP5838559B2 (ja) * | 2011-02-08 | 2016-01-06 | 富士電機株式会社 | 半導体装置の組立治具および半導体装置の組立方法 |
US8546906B2 (en) | 2011-07-19 | 2013-10-01 | The United States Of America As Represented By The Secretary Of The Army | System and method for packaging of high-voltage semiconductor devices |
US8779566B2 (en) * | 2011-08-15 | 2014-07-15 | National Semiconductor Corporation | Flexible routing for high current module application |
US8653635B2 (en) * | 2011-08-16 | 2014-02-18 | General Electric Company | Power overlay structure with leadframe connections |
US8637964B2 (en) * | 2011-10-26 | 2014-01-28 | Infineon Technologies Ag | Low stray inductance power module |
US20130175704A1 (en) | 2012-01-05 | 2013-07-11 | Ixys Corporation | Discrete power transistor package having solderless dbc to leadframe attach |
US8866274B2 (en) | 2012-03-27 | 2014-10-21 | Infineon Technologies Ag | Semiconductor packages and methods of formation thereof |
CN102646648B (zh) * | 2012-03-30 | 2014-12-03 | 台达电子企业管理(上海)有限公司 | 半导体开关绝缘保护装置以及电源组件 |
US9099432B2 (en) * | 2012-05-30 | 2015-08-04 | Stmicroelectronics S.R.L. | Electronic device for power applications |
US8716864B2 (en) | 2012-06-07 | 2014-05-06 | Ixys Corporation | Solderless die attach to a direct bonded aluminum substrate |
US8941208B2 (en) | 2012-07-30 | 2015-01-27 | General Electric Company | Reliable surface mount integrated power module |
EP2892074B1 (en) * | 2012-08-31 | 2018-01-03 | Mitsubishi Materials Corporation | Power module substrate and power module |
DE102012018943A1 (de) * | 2012-09-25 | 2014-03-27 | Infineon Technologies Ag | Halbleitergehäuse mit Rückseiten-Strukturierung |
US8575767B1 (en) | 2012-10-06 | 2013-11-05 | Ixys Corporation | Reflow of thermoplastic sheet for passivation of power integrated circuits |
JP6099453B2 (ja) * | 2012-11-28 | 2017-03-22 | Dowaメタルテック株式会社 | 電子部品搭載基板およびその製造方法 |
US8987876B2 (en) | 2013-03-14 | 2015-03-24 | General Electric Company | Power overlay structure and method of making same |
US10269688B2 (en) | 2013-03-14 | 2019-04-23 | General Electric Company | Power overlay structure and method of making same |
US9431394B2 (en) * | 2013-08-29 | 2016-08-30 | Infineon Technologies Ag | Power semiconductor package with gate and field electrode leads |
US9312231B2 (en) * | 2013-10-31 | 2016-04-12 | Freescale Semiconductor, Inc. | Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process |
DE112014006144B4 (de) * | 2014-01-09 | 2023-03-30 | Hitachi Astemo, Ltd. | Verfahren zum Herstellen einer Leistungshalbleitervorrichtung, Leistungshalbleitervorrichtung und Leistungswandler, der diese verwendet |
DE102015116807A1 (de) | 2015-10-02 | 2017-04-06 | Infineon Technologies Austria Ag | Funktionalisierte Schnittstellenstruktur |
US9443792B1 (en) | 2015-10-31 | 2016-09-13 | Ixys Corporation | Bridging DMB structure for wire bonding in a power semiconductor device module |
CN106920781A (zh) * | 2015-12-28 | 2017-07-04 | 意法半导体有限公司 | 半导体封装体和用于形成半导体封装体的方法 |
US10000423B1 (en) | 2016-03-31 | 2018-06-19 | Ixys, Llc | Direct metal bonding on carbon-covered ceramic contact projections of a ceramic carrier |
WO2018018848A1 (zh) * | 2016-07-29 | 2018-02-01 | 广东美的制冷设备有限公司 | 一种智能功率模块及其制造方法 |
USD877707S1 (en) | 2017-03-30 | 2020-03-10 | Mitsubishi Electric Corporation | Semiconductor package |
WO2019011654A1 (en) * | 2017-07-10 | 2019-01-17 | Abb Schweiz Ag | POWER SEMICONDUCTOR MODULE WITH ALVEOLES IN A METALLIC LAYER UNDER THE FOOT OF A TERMINAL |
EP3444839A1 (en) * | 2017-08-18 | 2019-02-20 | Infineon Technologies Austria AG | Assembly and method for mounting an electronic component to a substrate |
US10002821B1 (en) * | 2017-09-29 | 2018-06-19 | Infineon Technologies Ag | Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates |
JP7153544B2 (ja) * | 2018-11-28 | 2022-10-14 | 株式会社マキタ | 電動作業機 |
US11927431B1 (en) | 2018-12-11 | 2024-03-12 | Northrop Grumman Systems Corporation | Firing switch for compact capacitive discharge unit |
US11270969B2 (en) | 2019-06-04 | 2022-03-08 | Jmj Korea Co., Ltd. | Semiconductor package |
KR102343920B1 (ko) | 2019-06-04 | 2021-12-29 | 제엠제코(주) | 반도체 패키지 |
KR102199360B1 (ko) | 2019-06-20 | 2021-01-06 | 제엠제코(주) | 반도체 패키지 |
KR102332716B1 (ko) | 2019-07-15 | 2021-11-30 | 제엠제코(주) | 반도체 패키지 |
US11521921B2 (en) * | 2019-09-04 | 2022-12-06 | Semiconductor Components Industries, Llc | Semiconductor device package assemblies and methods of manufacture |
JP1664527S (ko) * | 2019-10-28 | 2020-07-27 | ||
JP1664528S (ko) * | 2019-10-28 | 2020-07-27 | ||
US11581632B1 (en) | 2019-11-01 | 2023-02-14 | Northrop Grumman Systems Corporation | Flexline wrap antenna for projectile |
KR102172689B1 (ko) | 2020-02-07 | 2020-11-02 | 제엠제코(주) | 반도체 패키지 및 그 제조방법 |
EP3872848A1 (en) * | 2020-02-27 | 2021-09-01 | Littelfuse, Inc. | Metal tab for chip assembly |
KR102228945B1 (ko) | 2020-05-21 | 2021-03-17 | 제엠제코(주) | 반도체 패키지 및 이의 제조방법 |
US11328980B2 (en) | 2020-07-10 | 2022-05-10 | Toyota Motor Engineering & Manufacturing North America, Inc. | Automotive power devices on direct bond copper embedded in PCB driver boards |
KR102378171B1 (ko) | 2020-08-12 | 2022-03-25 | 제엠제코(주) | 커플드 반도체 패키지 |
KR102228938B1 (ko) | 2020-08-12 | 2021-03-17 | 제엠제코(주) | 커플드 반도체 패키지 |
US11388839B2 (en) | 2020-08-14 | 2022-07-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronics cooling assemblies and methods for making the same |
KR102499825B1 (ko) * | 2021-02-05 | 2023-02-14 | 파워마스터반도체 주식회사 | 패키지형 전력 반도체 장치 |
CN117296235A (zh) * | 2021-03-15 | 2023-12-26 | 美国轮轴制造公司 | 电驱动单元 |
CN113782504B (zh) * | 2021-09-08 | 2024-06-25 | 中国矿业大学 | 一种集成散热器的功率模块简化封装结构及制作方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202925C (ko) * | 1969-04-30 | 1900-01-01 | ||
US3784883A (en) * | 1971-07-19 | 1974-01-08 | Communications Transistor Corp | Transistor package |
GB1327352A (en) * | 1971-10-02 | 1973-08-22 | Kyoto Ceramic | Semiconductor device |
US3763403A (en) * | 1972-03-01 | 1973-10-02 | Gen Electric | Isolated heat-sink semiconductor device |
US3908185A (en) * | 1974-03-06 | 1975-09-23 | Rca Corp | High frequency semiconductor device having improved metallized patterns |
US4278990A (en) * | 1979-03-19 | 1981-07-14 | General Electric Company | Low thermal resistance, low stress semiconductor package |
DE3204167A1 (de) * | 1982-02-06 | 1983-08-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten |
JPS59181627A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体装置の製造方法 |
US4563383A (en) | 1984-03-30 | 1986-01-07 | General Electric Company | Direct bond copper ceramic substrate for electronic applications |
US4925024A (en) * | 1986-02-24 | 1990-05-15 | Hewlett-Packard Company | Hermetic high frequency surface mount microelectronic package |
US4878106A (en) * | 1986-12-02 | 1989-10-31 | Anton Piller Gmbh & Co. Kg | Semiconductor circuit packages for use in high power applications and method of making the same |
US4891686A (en) * | 1988-04-08 | 1990-01-02 | Directed Energy, Inc. | Semiconductor packaging with ground plane conductor arrangement |
JPH07118514B2 (ja) * | 1989-04-24 | 1995-12-18 | 株式会社東芝 | 半田バンプ型半導体装置 |
US5075759A (en) * | 1989-07-21 | 1991-12-24 | Motorola, Inc. | Surface mounting semiconductor device and method |
US5198885A (en) | 1991-05-16 | 1993-03-30 | Cts Corporation | Ceramic base power package |
US5596231A (en) | 1991-08-05 | 1997-01-21 | Asat, Limited | High power dissipation plastic encapsulated package for integrated circuit die |
US5164885A (en) * | 1991-11-21 | 1992-11-17 | Motorola, Inc. | Electronic package having a non-oxide ceramic bonded to metal and method for making |
US5808357A (en) * | 1992-06-02 | 1998-09-15 | Fujitsu Limited | Semiconductor device having resin encapsulated package structure |
EP0590804B1 (en) * | 1992-09-03 | 1997-02-05 | STMicroelectronics, Inc. | Vertically isolated monolithic bipolar high-power transistor with top collector |
US5338974A (en) * | 1993-03-17 | 1994-08-16 | Spectrian, Inc. | RF power transistor package |
US5650662A (en) | 1993-08-17 | 1997-07-22 | Edwards; Steven F. | Direct bonded heat spreader |
EP0650193A3 (en) * | 1993-10-25 | 1996-07-31 | Toshiba Kk | Semiconductor device and method for its production. |
TW258829B (ko) | 1994-01-28 | 1995-10-01 | Ibm | |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
EP0671766A1 (en) * | 1994-02-25 | 1995-09-13 | Harris Corporation | Semiconductor package and method |
US5490627A (en) | 1994-06-30 | 1996-02-13 | Hughes Aircraft Company | Direct bonding of copper composites to ceramics |
US5488252A (en) * | 1994-08-16 | 1996-01-30 | Telefonaktiebolaget L M Erricsson | Layout for radio frequency power transistors |
US5675181A (en) * | 1995-01-19 | 1997-10-07 | Fuji Electric Co., Ltd. | Zirconia-added alumina substrate with direct bonding of copper |
US5834840A (en) * | 1995-05-25 | 1998-11-10 | Massachusetts Institute Of Technology | Net-shape ceramic processing for electronic devices and packages |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
US5696466A (en) * | 1995-12-08 | 1997-12-09 | The Whitaker Corporation | Heterolithic microwave integrated impedance matching circuitry and method of manufacture |
JP3206717B2 (ja) * | 1996-04-02 | 2001-09-10 | 富士電機株式会社 | 電力用半導体モジュール |
US5760473A (en) * | 1996-06-25 | 1998-06-02 | Brush Wellman Inc. | Semiconductor package having a eutectic bonding layer |
US6056186A (en) * | 1996-06-25 | 2000-05-02 | Brush Wellman Inc. | Method for bonding a ceramic to a metal with a copper-containing shim |
US5889319A (en) * | 1996-07-19 | 1999-03-30 | Ericsson, Inc. | RF power package with a dual ground |
JP2781783B2 (ja) * | 1996-07-30 | 1998-07-30 | 山形日本電気株式会社 | 半導体装置用パッケージ |
TW353220B (en) * | 1996-08-20 | 1999-02-21 | Toshiba Corp | Silicon nitride circuit board and semiconductor module |
US5877555A (en) * | 1996-12-20 | 1999-03-02 | Ericsson, Inc. | Direct contact die attach |
US6020636A (en) * | 1997-10-24 | 2000-02-01 | Eni Technologies, Inc. | Kilowatt power transistor |
US6404065B1 (en) * | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
US6181200B1 (en) * | 1999-04-09 | 2001-01-30 | Integra Technologies, Inc. | Radio frequency power device |
-
1998
- 1998-07-31 US US09/134,664 patent/US6404065B1/en not_active Expired - Lifetime
-
1999
- 1999-07-27 KR KR1020067024873A patent/KR100849914B1/ko not_active IP Right Cessation
- 1999-07-27 DE DE19983419.9A patent/DE19983419B3/de not_active Expired - Lifetime
- 1999-07-27 WO PCT/US1999/017038 patent/WO2000007238A1/en not_active Application Discontinuation
- 1999-07-27 GB GB0101986A patent/GB2358960B/en not_active Expired - Fee Related
- 1999-07-27 KR KR1020017001329A patent/KR100685253B1/ko not_active IP Right Cessation
- 1999-07-27 JP JP2000562950A patent/JP2002521843A/ja active Pending
- 1999-07-27 DE DE19983419T patent/DE19983419T1/de not_active Withdrawn
- 1999-07-27 EP EP99938821A patent/EP1099252A4/en not_active Withdrawn
-
2001
- 2001-05-08 US US09/851,696 patent/US6534343B2/en not_active Expired - Lifetime
- 2001-09-05 US US09/947,415 patent/US6710463B2/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100799562B1 (ko) * | 2002-03-25 | 2008-01-31 | 페어차일드코리아반도체 주식회사 | 반도체 전력 모듈 및 그 제조방법 |
US7151311B2 (en) | 2002-11-11 | 2006-12-19 | Mitsubishi Denki Kabushiki Kaisha | Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer |
KR100756303B1 (ko) * | 2002-11-11 | 2007-09-06 | 미쓰비시덴키 가부시키가이샤 | 몰드수지 밀봉형 파워 반도체장치 및 그 제조방법 |
KR101371956B1 (ko) * | 2007-06-21 | 2014-03-07 | 엘지이노텍 주식회사 | Dcb 기판 모듈 |
US9524936B2 (en) | 2014-10-16 | 2016-12-20 | Hyundai Motor Company | Power semiconductor module and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20020017714A1 (en) | 2002-02-14 |
WO2000007238A1 (en) | 2000-02-10 |
DE19983419B3 (de) | 2018-07-05 |
US6404065B1 (en) | 2002-06-11 |
KR100685253B1 (ko) | 2007-02-22 |
EP1099252A1 (en) | 2001-05-16 |
US20010018235A1 (en) | 2001-08-30 |
GB0101986D0 (en) | 2001-03-14 |
US6710463B2 (en) | 2004-03-23 |
DE19983419T1 (de) | 2001-09-13 |
GB2358960B (en) | 2003-08-13 |
KR100849914B1 (ko) | 2008-08-04 |
EP1099252A4 (en) | 2006-05-31 |
JP2002521843A (ja) | 2002-07-16 |
US6534343B2 (en) | 2003-03-18 |
GB2358960A (en) | 2001-08-08 |
KR20070007197A (ko) | 2007-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100849914B1 (ko) | 패키지형 전력 반도체 장치의 제조방법 | |
JP4569473B2 (ja) | 樹脂封止型パワー半導体モジュール | |
KR100957078B1 (ko) | 전기적으로 절연된 전력 장치 패키지 | |
US7005734B2 (en) | Double-sided cooling isolated packaged power semiconductor device | |
US4103321A (en) | Composite electric circuit structure of a printed circuit and heat generating discrete electrical component | |
EP2851951B1 (en) | Method for manufacturing semiconductor device and semiconductor device | |
KR20010071333A (ko) | 히트 싱크에 집적 회로 패키지를 고정시키는 열 전도성장착 장치 | |
US7229855B2 (en) | Process for assembling a double-sided circuit component | |
US7012332B2 (en) | Semiconductor device having sealing structure for wide gap type semiconductor chip | |
JP2017123360A (ja) | 半導体モジュール | |
US10700043B1 (en) | Solid state power switch with optimized heat sink configuration | |
JPH11163045A (ja) | 半導体装置及びその製造方法 | |
US20020163074A1 (en) | Power device with a plastic molded package and direct bonded substrate | |
JPH09181253A (ja) | 半導体素子用のパッケージング装置 | |
KR100260045B1 (ko) | 전력 반도체 모듈의 방열판 구조 | |
JP7492375B2 (ja) | 半導体装置 | |
US20240194576A1 (en) | Power module for a vehicle | |
WO2024057847A1 (ja) | 半導体装置 | |
EP4145495A1 (en) | Method of manufacturing an electrical interconnect for a semiconductor device as well as the corresponding device having the same | |
JPH0778903A (ja) | 混成集積回路におけるバイアス電圧の供給方法 | |
JPH03116859A (ja) | 混成集積回路装置 | |
JPH09331150A (ja) | 半導体装置 | |
CN116601769A (zh) | 半导体装置以及半导体装置的制造方法 | |
JPH0453095B2 (ko) | ||
JPH07283339A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
A107 | Divisional application of patent | ||
AMND | Amendment | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130130 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140129 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150129 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151230 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161229 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171228 Year of fee payment: 12 |
|
EXPY | Expiration of term |