JP4989370B2 - ノズルおよびそれを備える基板処理装置 - Google Patents

ノズルおよびそれを備える基板処理装置 Download PDF

Info

Publication number
JP4989370B2
JP4989370B2 JP2007219835A JP2007219835A JP4989370B2 JP 4989370 B2 JP4989370 B2 JP 4989370B2 JP 2007219835 A JP2007219835 A JP 2007219835A JP 2007219835 A JP2007219835 A JP 2007219835A JP 4989370 B2 JP4989370 B2 JP 4989370B2
Authority
JP
Japan
Prior art keywords
substrate
resin
nozzle
processing
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007219835A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008118109A (ja
Inventor
直之 長田
雅視 澤村
公ニ 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd, Dainippon Screen Manufacturing Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2007219835A priority Critical patent/JP4989370B2/ja
Priority to KR1020070100880A priority patent/KR100907588B1/ko
Priority to US11/871,595 priority patent/US9027577B2/en
Priority to TW096138169A priority patent/TWI386986B/zh
Publication of JP2008118109A publication Critical patent/JP2008118109A/ja
Application granted granted Critical
Publication of JP4989370B2 publication Critical patent/JP4989370B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
JP2007219835A 2006-10-13 2007-08-27 ノズルおよびそれを備える基板処理装置 Active JP4989370B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007219835A JP4989370B2 (ja) 2006-10-13 2007-08-27 ノズルおよびそれを備える基板処理装置
KR1020070100880A KR100907588B1 (ko) 2006-10-13 2007-10-08 노즐 및 그것을 구비하는 기판처리장치
US11/871,595 US9027577B2 (en) 2006-10-13 2007-10-12 Nozzle and a substrate processing apparatus including the same
TW096138169A TWI386986B (zh) 2006-10-13 2007-10-12 噴嘴及具備該噴嘴之基板處理裝置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006280001 2006-10-13
JP2006280001 2006-10-13
JP2007219835A JP4989370B2 (ja) 2006-10-13 2007-08-27 ノズルおよびそれを備える基板処理装置

Publications (2)

Publication Number Publication Date
JP2008118109A JP2008118109A (ja) 2008-05-22
JP4989370B2 true JP4989370B2 (ja) 2012-08-01

Family

ID=39503776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007219835A Active JP4989370B2 (ja) 2006-10-13 2007-08-27 ノズルおよびそれを備える基板処理装置

Country Status (4)

Country Link
US (1) US9027577B2 (zh)
JP (1) JP4989370B2 (zh)
KR (1) KR100907588B1 (zh)
TW (1) TWI386986B (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101099612B1 (ko) 2009-09-21 2011-12-29 세메스 주식회사 스윙노즐유닛 및 그것을 갖는 기판 처리 장치
JP5954096B2 (ja) * 2012-10-11 2016-07-20 東京エレクトロン株式会社 液処理装置
JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
JP6045041B2 (ja) * 2013-09-30 2016-12-14 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
KR101640669B1 (ko) * 2013-09-30 2016-07-18 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 방법 및 기판 처리 장치
US10074547B2 (en) 2013-12-19 2018-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist nozzle device and photoresist supply system
JP6600470B2 (ja) 2014-04-01 2019-10-30 株式会社荏原製作所 洗浄装置及び洗浄方法
JP2016167568A (ja) * 2015-03-10 2016-09-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6496171B2 (ja) * 2015-03-30 2019-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6377030B2 (ja) 2015-09-01 2018-08-22 東京エレクトロン株式会社 基板処理装置
JP6794730B2 (ja) * 2015-09-28 2020-12-02 東京エレクトロン株式会社 処理液供給装置及び処理液供給装置の運用方法並びに記憶媒体
WO2017154673A1 (ja) 2016-03-08 2017-09-14 株式会社荏原製作所 基板洗浄装置、基板洗浄方法、基板処理装置および基板乾燥装置
JP6933448B2 (ja) * 2016-04-22 2021-09-08 株式会社荏原製作所 基板洗浄装置
CN105870040B (zh) 2016-04-05 2018-09-04 京东方科技集团股份有限公司 一种喷嘴和刻蚀装置
US10388537B2 (en) * 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
KR102338647B1 (ko) * 2016-05-09 2021-12-13 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
JP6685197B2 (ja) * 2016-07-26 2020-04-22 東京エレクトロン株式会社 基板処理装置およびノズル
JP6702082B2 (ja) * 2016-08-18 2020-05-27 東京エレクトロン株式会社 液処理装置及び配管の監視方法
JP6815873B2 (ja) * 2017-01-18 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10864533B2 (en) * 2017-06-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
US11056358B2 (en) * 2017-11-14 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer cleaning apparatus and method
JP6971949B2 (ja) * 2018-10-05 2021-11-24 三菱電機株式会社 液体吐出ノズルおよび半導体製造装置
KR102175119B1 (ko) * 2018-12-31 2020-11-05 세메스 주식회사 처리 유체 공급 노즐 및 이를 포함하는 기판 처리 장치
KR20200134352A (ko) * 2019-05-21 2020-12-02 삼성전자주식회사 스핀 코터 및 그를 이용한 반도체 소자의 제조 방법
JP7297591B2 (ja) 2019-08-09 2023-06-26 東京エレクトロン株式会社 基板処理装置およびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3592700A (en) * 1968-08-05 1971-07-13 Mc Donnell Douglas Corp Polymer coating of metals
JPS57174168A (en) 1981-04-06 1982-10-26 Hokko Chem Ind Co Ltd Spraying pipe for agricultural medicine sprayer which is prevented of electrostatic charge
JPS5883066A (ja) * 1981-11-12 1983-05-18 Daikin Ind Ltd 非粘着導電性フツ素ゴム塗料
JPH0679213A (ja) * 1992-09-04 1994-03-22 Tosoh Corp ディスペンス用ノズル
JPH11165115A (ja) * 1997-12-04 1999-06-22 Fuji Photo Film Co Ltd 光ディスク製造用スピンコート装置
US6520222B2 (en) * 2000-07-31 2003-02-18 Catlow, Inc. Fuel dispensing nozzle having a dripless spout
JP2002170803A (ja) 2000-12-04 2002-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4180306B2 (ja) * 2001-06-26 2008-11-12 アルプス電気株式会社 ウエット処理ノズルおよびウエット処理装置
JP2003086557A (ja) * 2001-09-14 2003-03-20 Dainippon Screen Mfg Co Ltd 基板処理方法および装置
JP4349606B2 (ja) * 2002-03-25 2009-10-21 大日本スクリーン製造株式会社 基板洗浄方法
JP4047635B2 (ja) * 2002-06-13 2008-02-13 芝浦メカトロニクス株式会社 基板の処理装置
CN1230041C (zh) 2002-12-30 2005-11-30 友达光电股份有限公司 静电消除器
JP4247890B2 (ja) 2003-08-12 2009-04-02 東京エレクトロン株式会社 塗布ノズル及び塗布装置
KR100708037B1 (ko) * 2003-12-24 2007-04-16 마츠시타 덴끼 산교 가부시키가이샤 유체공급노즐, 기판처리장치 및 기판처리방법

Also Published As

Publication number Publication date
KR20080034077A (ko) 2008-04-18
TWI386986B (zh) 2013-02-21
JP2008118109A (ja) 2008-05-22
TW200828426A (en) 2008-07-01
US9027577B2 (en) 2015-05-12
US20080251107A1 (en) 2008-10-16
KR100907588B1 (ko) 2009-07-14

Similar Documents

Publication Publication Date Title
JP4989370B2 (ja) ノズルおよびそれを備える基板処理装置
KR100881964B1 (ko) 기판처리장치
JP4227858B2 (ja) 集積回路製造装置および集積回路製造方法と、この方法に使用する移送ロボット
JP2006012880A (ja) 基板反転装置、基板搬送装置、基板処理装置、基板反転方法、基板搬送方法および基板処理方法
JP2011066426A (ja) スイングノズルユニット及びそれを有する基板処理装置
TWI661500B (zh) 基板處理裝置及基板處理方法
JP3343033B2 (ja) 基板処理装置
US8015985B2 (en) Substrate processing apparatus and substrate processing method using the same
US12020954B2 (en) Substrate processing apparatus
CN100518948C (zh) 喷嘴及具有该喷嘴的基板处理装置
JP4731377B2 (ja) 基板処理装置および基板処理方法
JP2008235301A (ja) 基板処理装置
JP3560011B2 (ja) 基板保持具
JP7302997B2 (ja) 基板処理装置、及び基板処理装置の配管洗浄方法
JP2007149890A (ja) 基板処理装置および基板処理方法
JPH10321577A (ja) 半導体基板の洗浄装置
JP2006128424A (ja) 基板処理装置および基板処理方法
KR200476530Y1 (ko) 노즐모듈 및 이를 구비한 세정장치
JP3013909B2 (ja) 洗浄装置
JP2009099981A (ja) 処理液感知器を有するバルブ、これを利用する基板処理装置及び基板処理方法
JP2005175036A (ja) 基板処理装置
US20230051164A1 (en) Fittings for wafer cleaning systems
JP7040870B2 (ja) 基板処理装置、及び基板処理装置の部品検査方法
WO2024176552A1 (ja) 基板処理装置および基板処理方法
JP2001296186A (ja) 温度測定装置及び方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110128

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120403

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120427

R150 Certificate of patent or registration of utility model

Ref document number: 4989370

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150511

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250