JP6377030B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP6377030B2 JP6377030B2 JP2015172096A JP2015172096A JP6377030B2 JP 6377030 B2 JP6377030 B2 JP 6377030B2 JP 2015172096 A JP2015172096 A JP 2015172096A JP 2015172096 A JP2015172096 A JP 2015172096A JP 6377030 B2 JP6377030 B2 JP 6377030B2
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- Japan
- Prior art keywords
- layer
- nozzle
- substrate processing
- tip
- processing apparatus
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-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
2 搬入出ステーション
3 処理ステーション
4 制御装置
16 処理ユニット
24 ノズルユニット
25 配管
26 ミキシング領域
27 第1保持シール部材
28 第2保持シール部材
29 回り止めピン
241 ノズル
241a ノズルチップ
241b 囲い部材
242 ノズルアーム
243 アーム支持部
249 支持部材
251 第1層配管
251a 先端
252 第2層配管
253 第3層配管
254 SPM流路
CS 密閉空間
MP 混合位置
SP 空間
W ウェハ
Claims (10)
- 基板へ向けて処理流体を吐出するノズルと、
前記ノズルへ処理流体を供給する配管と
を備え、
前記配管は、
内側から順に第1層、第2層および第3層をなす3層構造を有し、
前記ノズルと前記第1層の先端および前記第3層の先端が接合し、前記第1層の先端が、前記第2層の先端よりも、前記処理流体の吐出方向に対し突出していない位置にあること
を特徴とする基板処理装置。 - 前記第1層と前記第2層との間に空間が形成されていること
を特徴とする請求項1に記載の基板処理装置。 - 先端部において前記ノズルを支持するノズルアームと、
上端部において前記ノズルアームの基端部を支持するアーム支持部と
を備え、
前記アーム支持部は、
前記ノズルアームの基端部から延びて配設される前記第1層を可動可能に保持し、前記第2層を固定すること
を特徴とする請求項1または2に記載の基板処理装置。 - 前記アーム支持部は、
前記ノズルアームの基端部から延びて配設される前記第1層の周囲を封止し、かつ、該第1層を可動可能に保持する支持部材を有すること
を特徴とする請求項3に記載の基板処理装置。 - 複数の流体が均一に混合されるミキシング領域を備え、
前記アーム支持部は、
鉛直軸に沿って延在する中空の支柱状に形成された形状を有し、
前記ミキシング領域は、
前記支柱内に設けられること
を特徴とする請求項4に記載の基板処理装置。 - 前記支持部材は、
前記第1層を支持することによって前記アーム支持部の内部に密閉空間を形成し、
前記ミキシング領域は、
前記密閉空間に配置されること
を特徴とする請求項5に記載の基板処理装置。 - 前記アーム支持部は、
前記第2層の周方向への回転を回り止めすること
を特徴とする請求項3〜6のいずれか一つに記載の基板処理装置。 - 前記ノズルは、
前記処理流体の吐出口を有するノズルチップを備え、
前記第1層の先端は、
前記ノズルチップに溶着されること
を特徴とする請求項1〜7のいずれか一つに記載の基板処理装置。 - 前記第1層および前記第3層は、熱可塑性樹脂であり、
前記第2層は、金属であること
を特徴とする請求項1〜8のいずれか一つに記載の基板処理装置。 - 前記処理流体は、硫酸と過酸化水素水との混合液であること
を特徴とする請求項1〜9のいずれか一つに記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015172096A JP6377030B2 (ja) | 2015-09-01 | 2015-09-01 | 基板処理装置 |
CN201610596540.XA CN106486341B (zh) | 2015-09-01 | 2016-07-26 | 基板处理装置 |
TW105127076A TWI644355B (zh) | 2015-09-01 | 2016-08-24 | Substrate processing device |
KR1020160110720A KR102629525B1 (ko) | 2015-09-01 | 2016-08-30 | 기판 처리 장치 |
US15/251,072 US9933702B2 (en) | 2015-09-01 | 2016-08-30 | Substrate processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015172096A JP6377030B2 (ja) | 2015-09-01 | 2015-09-01 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017050387A JP2017050387A (ja) | 2017-03-09 |
JP6377030B2 true JP6377030B2 (ja) | 2018-08-22 |
Family
ID=58097995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015172096A Active JP6377030B2 (ja) | 2015-09-01 | 2015-09-01 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9933702B2 (ja) |
JP (1) | JP6377030B2 (ja) |
KR (1) | KR102629525B1 (ja) |
CN (1) | CN106486341B (ja) |
TW (1) | TWI644355B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019160958A (ja) | 2018-03-12 | 2019-09-19 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP7297591B2 (ja) | 2019-08-09 | 2023-06-26 | 東京エレクトロン株式会社 | 基板処理装置およびその製造方法 |
JP7475945B2 (ja) * | 2020-04-20 | 2024-04-30 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196469A (ja) * | 1992-12-25 | 1994-07-15 | Sumitomo Metal Ind Ltd | ベーパー洗浄装置 |
JPH09115873A (ja) * | 1995-10-20 | 1997-05-02 | Mitsubishi Electric Corp | 半導体の製造装置および半導体の製造方法 |
JP4180306B2 (ja) * | 2001-06-26 | 2008-11-12 | アルプス電気株式会社 | ウエット処理ノズルおよびウエット処理装置 |
KR100611060B1 (ko) * | 2004-12-07 | 2006-08-09 | 삼성전자주식회사 | 기판 상으로 용액을 공급하기 위한 장치 |
JP2006191022A (ja) * | 2004-12-31 | 2006-07-20 | Kc Tech Co Ltd | 基板処理装置及び基板処理方法 |
JP4989370B2 (ja) * | 2006-10-13 | 2012-08-01 | 大日本スクリーン製造株式会社 | ノズルおよびそれを備える基板処理装置 |
JP5674314B2 (ja) * | 2007-02-28 | 2015-02-25 | インテグリス・インコーポレーテッド | レチクルsmifポッド又は基板コンテナ及びそのパージ方法 |
JP2010082889A (ja) * | 2008-09-30 | 2010-04-15 | Towa Corp | 液状樹脂材料供給用のゲートノズル |
KR101099612B1 (ko) * | 2009-09-21 | 2011-12-29 | 세메스 주식회사 | 스윙노즐유닛 및 그것을 갖는 기판 처리 장치 |
KR101471540B1 (ko) * | 2011-05-11 | 2014-12-11 | 세메스 주식회사 | 기판처리방법 및 기판처리장치 |
US20130105083A1 (en) * | 2011-11-01 | 2013-05-02 | Lam Research Corporation | Systems Comprising Silicon Coated Gas Supply Conduits And Methods For Applying Coatings |
JP5715981B2 (ja) | 2012-03-28 | 2015-05-13 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
-
2015
- 2015-09-01 JP JP2015172096A patent/JP6377030B2/ja active Active
-
2016
- 2016-07-26 CN CN201610596540.XA patent/CN106486341B/zh active Active
- 2016-08-24 TW TW105127076A patent/TWI644355B/zh active
- 2016-08-30 KR KR1020160110720A patent/KR102629525B1/ko active IP Right Grant
- 2016-08-30 US US15/251,072 patent/US9933702B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170059996A1 (en) | 2017-03-02 |
US9933702B2 (en) | 2018-04-03 |
JP2017050387A (ja) | 2017-03-09 |
CN106486341B (zh) | 2021-03-05 |
TW201724238A (zh) | 2017-07-01 |
KR102629525B1 (ko) | 2024-01-25 |
CN106486341A (zh) | 2017-03-08 |
TWI644355B (zh) | 2018-12-11 |
KR20170027295A (ko) | 2017-03-09 |
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