JP2018018870A - 基板処理装置およびノズル - Google Patents
基板処理装置およびノズル Download PDFInfo
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- JP2018018870A JP2018018870A JP2016145942A JP2016145942A JP2018018870A JP 2018018870 A JP2018018870 A JP 2018018870A JP 2016145942 A JP2016145942 A JP 2016145942A JP 2016145942 A JP2016145942 A JP 2016145942A JP 2018018870 A JP2018018870 A JP 2018018870A
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- 238000012545 processing Methods 0.000 title claims abstract description 126
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 78
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 description 20
- 239000012530 fluid Substances 0.000 description 16
- 238000012546 transfer Methods 0.000 description 13
- 239000004696 Poly ether ether ketone Substances 0.000 description 8
- 229920002530 polyetherether ketone Polymers 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
2 搬入出ステーション
3 処理ステーション
4 制御装置
16 処理ユニット
40 処理流体供給部
45 ノズルアーム
46 アーム支持部
60 ノズル
61 配管部
61a 水平部分
61b 下垂部分
62 覗き窓
63 採光窓
611 第1層
612 第2層
613 第3層
Claims (11)
- 基板を保持する基板保持部と、
前記基板に対して処理液を供給するノズルと
を備え、
前記ノズルは、
水平部分および前記水平部分から下垂する下垂部分を有し、前記下垂部分の先端から前記処理液を吐出する配管部と、
前記配管部の水平部分に設けられた覗き窓と
を備えることを特徴とする基板処理装置。 - 前記配管部は、
内側から順に、透明または半透明な部材で形成される第1層と、不透明な部材で形成される第2層とを含んで構成され、
前記覗き窓は、
前記第2層に形成された開口部であり、前記第1層を介して前記配管部の内部を視認可能であること
を特徴とする請求項1に記載の基板処理装置。 - 前記配管部は、
光を取り込むための採光窓
を備えることを特徴とする請求項2に記載の基板処理装置。 - 前記採光窓は、
前記第2層に形成された複数の小孔であること
を特徴とする請求項3に記載の基板処理装置。 - 前記第2層は、
導電性を有する樹脂で形成されていること
を特徴とする請求項2〜4のいずれか一つに記載の基板処理装置。 - 前記第1層は、
前記下垂部分の先端部において前記第2層から突出していること
を特徴とする請求項2〜5のいずれか一つに記載の基板処理装置。 - 前記第2層は、
導電性を有する樹脂で形成され、
前記第1層は、
前記下垂部分の先端部において前記第2層から突出しており、
前記配管部は、
前記第2層の外側に、透明または半透明な部材で形成される第3層をさらに含んで構成され、
前記ノズルは、
前記下垂部分の先端部において前記第2層から突出した前記第1層の外側に設けられて前記第2層の端面を封止する封止部材
を備えることを特徴とする請求項2〜4のいずれか一つに記載の基板処理装置。 - 前記第3層は、
前記下垂部分の先端部において前記第2層から突出して前記封止部材の少なくとも一部を覆うこと
を特徴とする請求項7に記載の基板処理装置。 - 前記第1層は、
前記水平部分の基端部において前記第2層から突出して導電性配管に接続されており、
前記ノズルは、
前記配管部を支持するノズルアームと、
前記水平部分の基端部において前記第2層の外側に設けられ、前記配管部を前記ノズルアームに取り付けるための導電性を有する取付部と、
前記取付部と前記導電性配管とに接触し、前記第2層と前記導電性配管とを前記取付部を介して電気的に接続する導通部材と
を備えることを特徴とする請求項7または8に記載の基板処理装置。 - 前記覗き窓は、
前記水平部分における前記下垂部分側の端部を含む領域に設けられること
を特徴とする請求項1〜9のいずれか一つに記載の基板処理装置。 - 基板に対して処理液を供給するノズルであって、
水平部分および前記水平部分から下垂する下垂部分を有し、前記下垂部分の先端から前記処理液を吐出する配管部と、
前記配管部の水平部分に設けられた覗き窓と
を備えることを特徴とするノズル。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016145942A JP6685197B2 (ja) | 2016-07-26 | 2016-07-26 | 基板処理装置およびノズル |
TW106210625U TWM560695U (zh) | 2016-07-26 | 2017-07-19 | 基板處理裝置及噴嘴 |
KR1020170093737A KR102418805B1 (ko) | 2016-07-26 | 2017-07-24 | 기판 처리 장치 및 노즐 |
US15/657,356 US10580669B2 (en) | 2016-07-26 | 2017-07-24 | Substrate processing apparatus and nozzle |
CN201720915109.7U CN207097787U (zh) | 2016-07-26 | 2017-07-26 | 基板处理装置和喷嘴 |
CN201710620301.8A CN107658244A (zh) | 2016-07-26 | 2017-07-26 | 基板处理装置和喷嘴 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2016145942A JP6685197B2 (ja) | 2016-07-26 | 2016-07-26 | 基板処理装置およびノズル |
Publications (2)
Publication Number | Publication Date |
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JP2018018870A true JP2018018870A (ja) | 2018-02-01 |
JP6685197B2 JP6685197B2 (ja) | 2020-04-22 |
Family
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JP2016145942A Active JP6685197B2 (ja) | 2016-07-26 | 2016-07-26 | 基板処理装置およびノズル |
Country Status (5)
Country | Link |
---|---|
US (1) | US10580669B2 (ja) |
JP (1) | JP6685197B2 (ja) |
KR (1) | KR102418805B1 (ja) |
CN (2) | CN107658244A (ja) |
TW (1) | TWM560695U (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020058962A (ja) * | 2018-10-05 | 2020-04-16 | 三菱電機株式会社 | 液体吐出ノズルおよび半導体製造装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102478849B1 (ko) * | 2016-07-06 | 2022-12-19 | 삼성전자주식회사 | 화학적 기계적 연마 장치 |
JP6685197B2 (ja) * | 2016-07-26 | 2020-04-22 | 東京エレクトロン株式会社 | 基板処理装置およびノズル |
JP7297591B2 (ja) * | 2019-08-09 | 2023-06-26 | 東京エレクトロン株式会社 | 基板処理装置およびその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009181982A (ja) * | 2008-01-29 | 2009-08-13 | Tokyo Electron Ltd | 液処理装置 |
JP2014082471A (ja) * | 2012-09-27 | 2014-05-08 | Dainippon Screen Mfg Co Ltd | 処理液供給装置、基板処理装置、処理液供給方法および基板処理方法 |
Family Cites Families (16)
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JP3414176B2 (ja) * | 1996-12-19 | 2003-06-09 | 富士通株式会社 | 平坦化剤の塗布装置 |
JP2001194209A (ja) * | 2000-01-14 | 2001-07-19 | Nippon Flow Cell Kk | 液面レベル計 |
KR200321686Y1 (ko) * | 2003-01-29 | 2003-07-31 | 정창교 | 유체흐름의 확인이 용이한 싸이트 윈도우 |
KR20060075548A (ko) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | 반도체 장치 제조용 현상 장치의 현상액 노즐 레벨 제어시스템 |
JP2006300875A (ja) * | 2005-04-25 | 2006-11-02 | Olympus Corp | 液面検出方法、液量検出方法、液面検出装置、液量検出装置および分注装置 |
JP4989370B2 (ja) * | 2006-10-13 | 2012-08-01 | 大日本スクリーン製造株式会社 | ノズルおよびそれを備える基板処理装置 |
JP5030767B2 (ja) * | 2007-12-25 | 2012-09-19 | 大日本スクリーン製造株式会社 | 基板処理装置、および基板処理装置の異常処理方法 |
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JP6685197B2 (ja) * | 2016-07-26 | 2020-04-22 | 東京エレクトロン株式会社 | 基板処理装置およびノズル |
-
2016
- 2016-07-26 JP JP2016145942A patent/JP6685197B2/ja active Active
-
2017
- 2017-07-19 TW TW106210625U patent/TWM560695U/zh unknown
- 2017-07-24 US US15/657,356 patent/US10580669B2/en active Active
- 2017-07-24 KR KR1020170093737A patent/KR102418805B1/ko active IP Right Grant
- 2017-07-26 CN CN201710620301.8A patent/CN107658244A/zh active Pending
- 2017-07-26 CN CN201720915109.7U patent/CN207097787U/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009181982A (ja) * | 2008-01-29 | 2009-08-13 | Tokyo Electron Ltd | 液処理装置 |
JP2014082471A (ja) * | 2012-09-27 | 2014-05-08 | Dainippon Screen Mfg Co Ltd | 処理液供給装置、基板処理装置、処理液供給方法および基板処理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020058962A (ja) * | 2018-10-05 | 2020-04-16 | 三菱電機株式会社 | 液体吐出ノズルおよび半導体製造装置 |
Also Published As
Publication number | Publication date |
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CN107658244A (zh) | 2018-02-02 |
KR20180012219A (ko) | 2018-02-05 |
US10580669B2 (en) | 2020-03-03 |
TWM560695U (zh) | 2018-05-21 |
US20180033656A1 (en) | 2018-02-01 |
JP6685197B2 (ja) | 2020-04-22 |
KR102418805B1 (ko) | 2022-07-08 |
CN207097787U (zh) | 2018-03-13 |
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