JP2020013967A - 熱処理装置及び熱処理方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
Abstract
Description
(熱処理装置)
第1の実施形態の熱処理装置の一例について説明する。図1は、第1の実施形態の熱処理装置の構成例を示す概略図である。図2は、図1の熱処理装置の第1冷却手段及び第2冷却手段の説明図である。図3は、図1の熱処理装置の排熱手段の説明図である。
第1の実施形態の熱処理装置の動作(熱処理方法)の一例について説明する。熱処理方法は、制御手段100が熱処理装置の各部の動作を制御することにより実行される。
第2の実施形態の熱処理装置の一例について説明する。図4は、第2の実施形態の熱処理装置の構成例を示す概略図である。
第3の実施形態の熱処理装置の一例について説明する。図5は、第3の実施形態の熱処理装置の構成例を示す概略図である。
11 内管
12 外管
13 収容部
24 回転軸
30 ガス供給手段
31 ガス供給管
32 ガス孔
50 加熱手段
51 断熱材
52 発熱体
60 第1冷却手段
61 第1流体流路
62 吹出孔
65 流量調整手段
70 第2冷却手段
71 第2流体流路
72 吹出孔
80 流体供給路
81 流路切替手段
90 排熱手段
W ウエハ
Claims (11)
- 基板を収容する縦長の処理容器と、
前記処理容器の内壁面に沿って上下に延びるガス供給管を有するガス供給手段と、
前記処理容器の周囲に設けられた断熱材と、前記断熱材の内壁面に沿って設けられた発熱体と、を有する加熱手段と、
前記断熱材の外側に形成された流体流路と、前記断熱材を貫通し、一端が前記流体流路と連通し、他端が前記処理容器と前記断熱材との間の空間に連通し、前記ガス供給管に向けて冷却流体を吹き出す吹出孔と、を有する冷却手段と、
を備え、
前記吹出孔は、前記ガス供給管の長手方向に沿って複数設けられている、
熱処理装置。 - 前記流体流路は、上下方向に複数形成されており、
前記冷却手段は、前記複数の流体流路の各々に流れる冷却流体の流量を調整する流量調整手段を有する、
請求項1に記載の熱処理装置。 - 前記複数の吹出孔の各々は、前記一端の側から前記他端の側に向かって斜め上方に傾斜している、
請求項1又は2に記載の熱処理装置。 - 前記複数の吹出孔よりも上方において前記空間と連通し、前記空間内の冷却流体を排出する排熱手段を備える、
請求項1乃至3のいずれか一項に記載の熱処理装置。 - 前記排熱手段と前記複数の吹出孔とは、平面視で重なる位置に設けられている、
請求項4に記載の熱処理装置。 - 前記排熱手段により排出された冷却流体は、熱交換器により冷却されて前記流体流路に再び供給される、
請求項4又は5に記載の熱処理装置。 - 前記処理容器内で基板を保持する基板保持具を回転可能に支持する回転軸を備える、
請求項1乃至6のいずれか一項に記載の熱処理装置。 - 前記断熱材の外側であって前記流体流路とは異なる位置に形成された第2流体流路と、前記断熱材を貫通し、一端が前記第2流体流路と連通し、他端が前記処理容器と前記断熱材との間の空間に連通し、前記処理容器に向けて冷却流体を吹き出す第2の吹出孔と、を有する第2冷却手段と、
前記流体流路及び前記第2流体流路と連通する流体供給路と、
前記流体供給路の接続先を前記流体流路又は前記第2流体流路に切り替える流路切替手段と、
を備える、
請求項1乃至7のいずれか一項に記載の熱処理装置。 - 前記処理容器は、下端部が開放された有天井の円筒形状の内管と、下端部が開放されて前記内管の外側を覆う有天井の外管とを有し、
前記内管は、側壁の一部を外側へ向けて突出させて形成された収容部を有し、
前記ガス供給管は、前記収容部内に収容されている、
請求項1乃至8のいずれか一項に記載の熱処理装置。 - 基板を縦長の処理容器内に収容する工程と、
前記処理容器の周囲に設けられた断熱材の内壁面に沿って設けられた発熱体により前記処理容器を加熱する工程と、
前記処理容器の内壁面に沿って上下に延びるガス供給管からガスを供給する工程と、
前記断熱材の外側に形成された流体流路から前記断熱材を貫通して前記処理容器と前記断熱材との間の空間に連通する複数の吹出孔により、前記ガス供給管に向けて冷却流体を吹き出す工程と、
を有し、
前記ガス供給管に向けて冷却流体を吹き出す工程は、前記ガス供給管からガスを供給する工程が実行されているときに行われる、
熱処理方法。 - 前記断熱材の外側に形成された第2流体流路から前記断熱材を貫通して前記処理容器と前記断熱材との間の空間に連通する複数の第2の吹出孔により、前記処理容器に向けて冷却流体を吹き出す工程を有し、
前記処理容器に向けて冷却流体を吹き出す工程は、前記ガス供給管からガスを供給する工程が実行されていないときに行われる、
請求項10に記載の熱処理方法。
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JP2018137086A JP7055075B2 (ja) | 2018-07-20 | 2018-07-20 | 熱処理装置及び熱処理方法 |
KR1020190086338A KR102466150B1 (ko) | 2018-07-20 | 2019-07-17 | 열처리 장치 및 열처리 방법 |
CN201910644087.9A CN110739244A (zh) | 2018-07-20 | 2019-07-17 | 热处理装置和热处理方法 |
TW108125232A TWI759614B (zh) | 2018-07-20 | 2019-07-17 | 熱處理裝置及熱處理方法 |
US16/515,144 US11367633B2 (en) | 2018-07-20 | 2019-07-18 | Heat treatment apparatus and heat treatment method |
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KR20210043810A (ko) * | 2019-10-14 | 2021-04-22 | 삼성전자주식회사 | 반도체 제조 장비 |
CN111519164B (zh) * | 2020-04-28 | 2021-03-23 | 上海大学 | 一种基于ald技术制备氧化锌薄膜的装置及方法 |
CN114171437A (zh) * | 2021-12-01 | 2022-03-11 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室的冷却装置及半导体工艺腔室 |
CN116007390A (zh) * | 2022-12-15 | 2023-04-25 | 湖南优热科技有限责任公司 | 一种带有快速主动冷却系统的石墨化炉 |
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