JP5364314B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5364314B2 JP5364314B2 JP2008219608A JP2008219608A JP5364314B2 JP 5364314 B2 JP5364314 B2 JP 5364314B2 JP 2008219608 A JP2008219608 A JP 2008219608A JP 2008219608 A JP2008219608 A JP 2008219608A JP 5364314 B2 JP5364314 B2 JP 5364314B2
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- JP
- Japan
- Prior art keywords
- heat treatment
- cylindrical
- cooling
- heat
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 239000012212 insulator Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000002826 coolant Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 11
- 239000000112 cooling gas Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Description
Claims (3)
- 上下方向の軸を中心にして、被処理基板が内部に挿入される反応チャンバーと、熱を均一に分散させるために前記反応チャンバーの外側に配置されるアウターチューブと、このアウターチューブの外側で内側面にヒータを設けた筒状断熱体とが同軸状に配置された熱処理装置であって、
前記筒状断熱体には上下方向に貫通する冷却用空間が形成されており、
前記冷却用空間の上方から前記冷却用空間に冷却水を供給する配管が設けられており、
前記筒状断熱体は、前記冷却水が前記ヒータに接触しないように内側の上端が閉じられている
ことを特徴とする熱処理装置。 - 請求項1に記載の熱処理装置において、前記冷却用空間は前記筒状断熱体を内側筒と外側筒に分割することで内側筒と外側筒との間に形成される筒状空間であることを特徴とする熱処理装置。
- 請求項1に記載の熱処理装置において、前記冷却用空間は前記筒状断熱体の周方向に等間隔で形成される上下方向の貫通穴であることを特徴とする熱処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008219608A JP5364314B2 (ja) | 2008-08-28 | 2008-08-28 | 熱処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008219608A JP5364314B2 (ja) | 2008-08-28 | 2008-08-28 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010056287A JP2010056287A (ja) | 2010-03-11 |
JP5364314B2 true JP5364314B2 (ja) | 2013-12-11 |
Family
ID=42071894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008219608A Expired - Fee Related JP5364314B2 (ja) | 2008-08-28 | 2008-08-28 | 熱処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5364314B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2764436B2 (ja) * | 1989-06-29 | 1998-06-11 | 東芝セラミックス株式会社 | 縦型拡散炉 |
JPH11260744A (ja) * | 1998-03-09 | 1999-09-24 | Kokusai Electric Co Ltd | 熱処理炉 |
JP4355441B2 (ja) * | 2000-11-29 | 2009-11-04 | 株式会社日立国際電気 | 熱処理装置及び熱処理方法及び半導体デバイスの製造方法 |
JP5049128B2 (ja) * | 2005-08-24 | 2012-10-17 | 株式会社日立国際電気 | 基板処理装置及びこれに用いられる加熱装置並びにこれらを利用した半導体の製造方法及び発熱体の保持構造 |
WO2008099449A1 (ja) * | 2007-02-09 | 2008-08-21 | Hitachi Kokusai Electric Inc. | 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 |
-
2008
- 2008-08-28 JP JP2008219608A patent/JP5364314B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2010056287A (ja) | 2010-03-11 |
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