JP5770042B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5770042B2 JP5770042B2 JP2011171183A JP2011171183A JP5770042B2 JP 5770042 B2 JP5770042 B2 JP 5770042B2 JP 2011171183 A JP2011171183 A JP 2011171183A JP 2011171183 A JP2011171183 A JP 2011171183A JP 5770042 B2 JP5770042 B2 JP 5770042B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- clean room
- heat
- furnace
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Description
1 熱処理装置
2 熱処理炉
3 処理容器
3A 内管
3B 外管
3a 炉口
3b マニホルドフランジ
5 ヒータ
8 ガス供給ライン
8A 第1排気ライン
10 蓋体
11 保温筒
12 ボート
13 昇降機構
16 断熱材
25 覆い体
40 強制冷却ライン
45 ヒータカバー
46 第2排気ライン
Claims (6)
- 床面を有するクリーンルームに設置された熱処理装置において、
上部に炉口を有し複数の被処理体を収納して熱処理するための縦型の処理容器と、処理容器の周囲を覆う断熱材と、断熱材の内周面に設けられたヒータとを有する熱処理炉と、 処理容器の炉口を閉塞する蓋体と、
蓋体に吊設され、複数の被処理体を多段に保持する保持具と、
蓋体を昇降させて蓋体により炉口を開閉するとともに処理容器内へ保持具を搬入しかつ搬出する昇降機構とを備え、
熱処理炉はクリーンルームの床面下方に設置され、
昇降機構はクリーンルームの床面上方に設置され、熱処理炉は、その外周がクリーンルームの床面下方に設置されたヒータカバーにより覆われており、このヒータカバーに、ヒータカバー内の熱気体および微量の処理ガスを外方へ排出するヒータカバー用排気ラインを設けたことを特徴とする熱処理装置。 - 熱処理炉はその高さ方向長さの30%以上がクリーンルームの床面下方に位置することを特徴とする請求項1記載の熱処理装置。
- 処理容器はその上部に、炉口を形成するとともにガス供給ラインが接続されたマニホルドフランジを有することを特徴とする請求項1記載の熱処理装置。
- 処理容器のマニホルドフランジは、クリーンルームの床面から上方へ突出することを特徴とする請求項3記載の熱処理装置。
- 処理容器のマニホルドフランジに、マニホルドフランジ用排気ラインが接続されていることを特徴とする請求項3記載の熱処理装置。
- 昇降機構はクリーンルームの床面上方に設けられた覆い体により覆われていることを特徴とする請求項1乃至5のいずれか記載の熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011171183A JP5770042B2 (ja) | 2011-08-04 | 2011-08-04 | 熱処理装置 |
US13/561,373 US9105672B2 (en) | 2011-08-04 | 2012-07-30 | Heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011171183A JP5770042B2 (ja) | 2011-08-04 | 2011-08-04 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013038128A JP2013038128A (ja) | 2013-02-21 |
JP5770042B2 true JP5770042B2 (ja) | 2015-08-26 |
Family
ID=47627153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011171183A Expired - Fee Related JP5770042B2 (ja) | 2011-08-04 | 2011-08-04 | 熱処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9105672B2 (ja) |
JP (1) | JP5770042B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
CN110026385B (zh) * | 2019-05-28 | 2021-08-31 | 珠海长安富士金属热处理有限公司 | 一种热处理用工件高效清洗装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4412812A (en) * | 1981-12-28 | 1983-11-01 | Mostek Corporation | Vertical semiconductor furnace |
DE8801785U1 (ja) * | 1988-02-11 | 1988-11-10 | Soehlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried, De | |
JPH02201156A (ja) * | 1989-01-30 | 1990-08-09 | Dow Chem Nippon Kk | ガスクロマトグラフィー用熱分解装置 |
US5221201A (en) * | 1990-07-27 | 1993-06-22 | Tokyo Electron Sagami Limited | Vertical heat treatment apparatus |
JP3108460B2 (ja) * | 1991-02-26 | 2000-11-13 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US5277579A (en) * | 1991-03-15 | 1994-01-11 | Tokyo Electron Sagami Limited | Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system |
US5407350A (en) * | 1992-02-13 | 1995-04-18 | Tokyo Electron Limited | Heat-treatment apparatus |
JP3177035B2 (ja) * | 1992-11-26 | 2001-06-18 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US5645419A (en) * | 1994-03-29 | 1997-07-08 | Tokyo Electron Kabushiki Kaisha | Heat treatment method and device |
JPH10209066A (ja) * | 1997-01-16 | 1998-08-07 | Kokusai Electric Co Ltd | 半導体製造装置 |
US6303908B1 (en) * | 1999-08-26 | 2001-10-16 | Nichiyo Engineering Corporation | Heat treatment apparatus |
JP2001284277A (ja) * | 2000-03-31 | 2001-10-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2002343720A (ja) * | 2001-05-11 | 2002-11-29 | Hitachi Kokusai Electric Inc | 熱処理装置 |
CN1639843A (zh) * | 2002-02-25 | 2005-07-13 | 福泰克炉业株式会社 | 热处理装置及热处理方法 |
KR100933765B1 (ko) * | 2005-08-24 | 2009-12-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판처리장치, 이에 사용되는 가열장치, 이를 이용한 반도체의 제조방법 및 발열체의 보지구조 |
JP5248874B2 (ja) * | 2007-03-20 | 2013-07-31 | 東京エレクトロン株式会社 | 熱処理炉及び縦型熱処理装置 |
US8023806B2 (en) | 2007-03-20 | 2011-09-20 | Tokyo Electron Limited | Heat processing furnace and vertical-type heat processing apparatus |
-
2011
- 2011-08-04 JP JP2011171183A patent/JP5770042B2/ja not_active Expired - Fee Related
-
2012
- 2012-07-30 US US13/561,373 patent/US9105672B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130034820A1 (en) | 2013-02-07 |
US9105672B2 (en) | 2015-08-11 |
JP2013038128A (ja) | 2013-02-21 |
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