JP4987140B2 - 自発光装置の作製方法 - Google Patents
自発光装置の作製方法 Download PDFInfo
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- JP4987140B2 JP4987140B2 JP2011101384A JP2011101384A JP4987140B2 JP 4987140 B2 JP4987140 B2 JP 4987140B2 JP 2011101384 A JP2011101384 A JP 2011101384A JP 2011101384 A JP2011101384 A JP 2011101384A JP 4987140 B2 JP4987140 B2 JP 4987140B2
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Description
として有する電気器具の作製方法に関する。
である。基板11としてはガラス、ガラスセラミックス、石英、シリコン、セラミックス、金属若しくはプラスチックからなる基板を用いることができる。
図4(A)は、画素電極40上に有機樹脂膜を成膜した後パターニングにより保護部41bを形成させたものである。Daは、有機樹脂膜の膜厚であるが、この膜厚が薄くなると図4(A)の保護部41bのように上部に窪みが生じる。
(「H. Shenk,H.Becker,O.Gelsen,E.Kluge,W.Kreuder,and H.Spreitzer,“Polymers for Light Emitting Diodes”,Euro Display,Proceedings,1999,p.33-37」)
なお、n型不純物元素としては、代表的には15族に属する元素、典型的にはリン又は砒素を用いることができる。なお、本実施例ではホスフィン(PH3)を質量分離しないでプラズマ励起したプラズマ(イオン)ドーピング法を用い、リンを1×1018atoms/cm3の濃度で添加する。勿論、質量分離を行うイオンインプランテーション法を用いても良い。
の濃度で含まれるようにドーズ量を調節する。
これは、ゲート電極としては微細加工が可能な材料を用い、ゲート配線には微細加工はできなくとも配線抵抗が小さい材料を用いるためである。勿論、ゲート電極とゲート配線とを同一材料で形成しても構わない。
この効果は電流を流した際に生じるホットキャリア注入に対する劣化対策であり、サンプリング回路の場合はチャネル形成領域904を挟む形で両側に設ける点が異なる。
また、スイッチング用TFT605のドレインは電流制御用TFT608のゲートに接続されている。
、(B)を用いて説明する。なお、必要に応じて図10、図11で用いた符号を引用することにする。
であり、第2層間絶縁膜1039及び第1パッシベーション膜1038にコンタクトホール(開孔)を開けた後、形成された開孔部において電流制御用TFTのドレイン配線1037に接続されるように形成される。
なお、シロキサンの高分子化合物を含む樹脂としては、シクロテンがある。
であり、本体2301、記録媒体(DVD等)2302、操作スイッチ2303、表示部(a)2304、表示部(b)2305等を含む。表示部(a)は主として画像情報を表示し、表示部(b)は主として文字情報を表示するが、本発明のEL表示装置はこれら表示部(a)、(b)に用いることができる。なお、記録媒体を備えた画像再生装置には家庭用ゲーム機器なども含まれる。
これにより、EL素子の低消費電力化、長寿命化、および軽量化が可能になる。
(T.Tsutsui, C.Adachi, S.Saito, Photochemical Processes in Organized Molecular Systems, ed.K.Honda, (Elsevier Sci.Pub., Tokyo,1991) p.437.)
Claims (2)
- 絶縁膜にコンタクトホールを形成し、
前記絶縁膜上及び前記コンタクトホール内に第1の電極を形成し、且つ、前記コンタクトホール内に前記第1の電極を設けることにより生じた凹部が形成され、
前記第1の電極上に有機樹脂膜を形成し、
前記有機樹脂膜をエッチングすることにより、前記凹部に埋込まれ且つ前記第1の電極表面よりも盛り上がった部分を有する第1の絶縁体を形成し、
前記第1の絶縁体の表面をエッチングすることにより、前記盛り上がった部分を薄くした第2の絶縁体を形成し、
前記第1の電極上及び前記第2の絶縁体上にEL層を形成し、
前記EL層上に第2の電極を形成することを特徴とする自発光装置の作製方法。 - 請求項1において、
前記絶縁膜の材料は、有機樹脂材料であることを特徴とする自発光装置の作製方法。
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US6706163B2 (en) * | 2001-03-21 | 2004-03-16 | Michael Seul | On-chip analysis of particles and fractionation of particle mixtures using light-controlled electrokinetic assembly of particles near surfaces |
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US6656611B2 (en) * | 2001-07-20 | 2003-12-02 | Osram Opto Semiconductors Gmbh | Structure-defining material for OLEDs |
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