JP4982921B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4982921B2
JP4982921B2 JP2001059948A JP2001059948A JP4982921B2 JP 4982921 B2 JP4982921 B2 JP 4982921B2 JP 2001059948 A JP2001059948 A JP 2001059948A JP 2001059948 A JP2001059948 A JP 2001059948A JP 4982921 B2 JP4982921 B2 JP 4982921B2
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Japan
Prior art keywords
insulating film
region
semiconductor device
resistance element
resistance
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Expired - Fee Related
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JP2001059948A
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English (en)
Japanese (ja)
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JP2002261244A (ja
JP2002261244A5 (enExample
Inventor
啓之 網城
敏夫 熊本
元繁 五十嵐
健司 山口
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2001059948A priority Critical patent/JP4982921B2/ja
Priority to US09/960,495 priority patent/US7045865B2/en
Publication of JP2002261244A publication Critical patent/JP2002261244A/ja
Priority to US11/384,244 priority patent/US20060175679A1/en
Priority to US12/007,496 priority patent/US7821078B2/en
Publication of JP2002261244A5 publication Critical patent/JP2002261244A5/ja
Priority to US12/891,214 priority patent/US8089136B2/en
Application granted granted Critical
Publication of JP4982921B2 publication Critical patent/JP4982921B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001059948A 2001-03-05 2001-03-05 半導体装置及びその製造方法 Expired - Fee Related JP4982921B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001059948A JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法
US09/960,495 US7045865B2 (en) 2001-03-05 2001-09-24 Semiconductor device with resistor elements formed on insulating film
US11/384,244 US20060175679A1 (en) 2001-03-05 2006-03-21 Semiconductor device and method for manufacturing the same
US12/007,496 US7821078B2 (en) 2001-03-05 2008-01-11 Semiconductor device having resistor elements and method for manufacturing the same
US12/891,214 US8089136B2 (en) 2001-03-05 2010-09-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059948A JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012036588A Division JP5582154B2 (ja) 2012-02-22 2012-02-22 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002261244A JP2002261244A (ja) 2002-09-13
JP2002261244A5 JP2002261244A5 (enExample) 2008-04-24
JP4982921B2 true JP4982921B2 (ja) 2012-07-25

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Family Applications (1)

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JP2001059948A Expired - Fee Related JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法

Country Status (2)

Country Link
US (4) US7045865B2 (enExample)
JP (1) JP4982921B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2012124526A (ja) * 2012-02-22 2012-06-28 Renesas Electronics Corp 半導体装置及びその製造方法

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JP4982921B2 (ja) * 2001-03-05 2012-07-25 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
US7135376B2 (en) * 2003-12-24 2006-11-14 Oki Electric Industry Co., Ltd. Resistance dividing circuit and manufacturing method thereof
KR100607806B1 (ko) * 2004-12-31 2006-08-02 동부일렉트로닉스 주식회사 직류 컨버터의 출력 이득 균일도 개선 방법
KR101275682B1 (ko) * 2005-04-26 2013-06-17 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법 및 반도체 제조용 마스크, 광 근접 처리 방법
US7920403B2 (en) * 2005-07-27 2011-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. ROM cell array structure
JP4991134B2 (ja) 2005-09-15 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2007250705A (ja) * 2006-03-15 2007-09-27 Nec Electronics Corp 半導体集積回路装置及びダミーパターンの配置方法
JP5005241B2 (ja) 2006-03-23 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2009016686A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 高周波用トランジスタ
US8598630B2 (en) * 2008-10-06 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photo alignment mark for a gate last process
JP2010109233A (ja) * 2008-10-31 2010-05-13 Renesas Technology Corp 半導体装置
JP5601026B2 (ja) * 2010-05-21 2014-10-08 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5554736B2 (ja) 2011-03-09 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置
US9202914B2 (en) 2012-03-14 2015-12-01 United Microelectronics Corporation Semiconductor device and method for fabricating the same
JP2014220491A (ja) * 2013-04-09 2014-11-20 富士電機株式会社 薄膜抵抗体群およびそれを内蔵した多層配線基板
US9379175B2 (en) 2013-12-26 2016-06-28 Mediatek Inc. Integrated circuits and fabrication methods thereof
US9761461B2 (en) * 2014-04-16 2017-09-12 Cirrus Logic, Inc. Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate
US9911727B2 (en) 2015-03-16 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strapping structure of memory circuit
US10340395B2 (en) * 2017-05-01 2019-07-02 Qualcomm Incorporated Semiconductor variable capacitor using threshold implant region
CN110739301B (zh) * 2019-09-11 2021-11-16 芯创智（北京）微电子有限公司 一种扩散电阻的版图结构
TWI809384B (zh) * 2020-04-28 2023-07-21 台灣積體電路製造股份有限公司 積體電路結構及其形成方法
US12414311B2 (en) * 2020-04-28 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit with feol resistor
JP2022020311A (ja) * 2020-07-20 2022-02-01 ソニーセミコンダクタソリューションズ株式会社 電子回路
US12249601B2 (en) * 2020-07-29 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device, method, layout, and system
US20220238516A1 (en) * 2021-01-25 2022-07-28 Yanbiao Pan Polysilicon resistor using reduced grain size polysilicon

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JP4982921B2 (ja) * 2001-03-05 2012-07-25 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124526A (ja) * 2012-02-22 2012-06-28 Renesas Electronics Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20020123202A1 (en) 2002-09-05
US7821078B2 (en) 2010-10-26
US20060175679A1 (en) 2006-08-10
US20110012231A1 (en) 2011-01-20
US7045865B2 (en) 2006-05-16
JP2002261244A (ja) 2002-09-13
US20080116526A1 (en) 2008-05-22
US8089136B2 (en) 2012-01-03

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