JP2002261244A5 - - Google Patents
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- JP2002261244A5 JP2002261244A5 JP2001059948A JP2001059948A JP2002261244A5 JP 2002261244 A5 JP2002261244 A5 JP 2002261244A5 JP 2001059948 A JP2001059948 A JP 2001059948A JP 2001059948 A JP2001059948 A JP 2001059948A JP 2002261244 A5 JP2002261244 A5 JP 2002261244A5
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001059948A JP4982921B2 (ja) | 2001-03-05 | 2001-03-05 | 半導体装置及びその製造方法 |
| US09/960,495 US7045865B2 (en) | 2001-03-05 | 2001-09-24 | Semiconductor device with resistor elements formed on insulating film |
| US11/384,244 US20060175679A1 (en) | 2001-03-05 | 2006-03-21 | Semiconductor device and method for manufacturing the same |
| US12/007,496 US7821078B2 (en) | 2001-03-05 | 2008-01-11 | Semiconductor device having resistor elements and method for manufacturing the same |
| US12/891,214 US8089136B2 (en) | 2001-03-05 | 2010-09-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001059948A JP4982921B2 (ja) | 2001-03-05 | 2001-03-05 | 半導体装置及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012036588A Division JP5582154B2 (ja) | 2012-02-22 | 2012-02-22 | 半導体装置及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002261244A JP2002261244A (ja) | 2002-09-13 |
| JP2002261244A5 true JP2002261244A5 (enExample) | 2008-04-24 |
| JP4982921B2 JP4982921B2 (ja) | 2012-07-25 |
Family
ID=18919443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001059948A Expired - Fee Related JP4982921B2 (ja) | 2001-03-05 | 2001-03-05 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (4) | US7045865B2 (enExample) |
| JP (1) | JP4982921B2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4982921B2 (ja) * | 2001-03-05 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US20040235258A1 (en) * | 2003-05-19 | 2004-11-25 | Wu David Donggang | Method of forming resistive structures |
| US7135376B2 (en) * | 2003-12-24 | 2006-11-14 | Oki Electric Industry Co., Ltd. | Resistance dividing circuit and manufacturing method thereof |
| KR100607806B1 (ko) * | 2004-12-31 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 직류 컨버터의 출력 이득 균일도 개선 방법 |
| KR101275682B1 (ko) * | 2005-04-26 | 2013-06-17 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 및 반도체 제조용 마스크, 광 근접 처리 방법 |
| US7920403B2 (en) * | 2005-07-27 | 2011-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | ROM cell array structure |
| JP4991134B2 (ja) | 2005-09-15 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2007250705A (ja) * | 2006-03-15 | 2007-09-27 | Nec Electronics Corp | 半導体集積回路装置及びダミーパターンの配置方法 |
| JP5005241B2 (ja) | 2006-03-23 | 2012-08-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP2009016686A (ja) * | 2007-07-06 | 2009-01-22 | Toshiba Corp | 高周波用トランジスタ |
| US8598630B2 (en) * | 2008-10-06 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo alignment mark for a gate last process |
| JP2010109233A (ja) * | 2008-10-31 | 2010-05-13 | Renesas Technology Corp | 半導体装置 |
| JP5601026B2 (ja) * | 2010-05-21 | 2014-10-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5554736B2 (ja) | 2011-03-09 | 2014-07-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5582154B2 (ja) * | 2012-02-22 | 2014-09-03 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US9202914B2 (en) | 2012-03-14 | 2015-12-01 | United Microelectronics Corporation | Semiconductor device and method for fabricating the same |
| JP2014220491A (ja) * | 2013-04-09 | 2014-11-20 | 富士電機株式会社 | 薄膜抵抗体群およびそれを内蔵した多層配線基板 |
| US9379175B2 (en) | 2013-12-26 | 2016-06-28 | Mediatek Inc. | Integrated circuits and fabrication methods thereof |
| US9761461B2 (en) * | 2014-04-16 | 2017-09-12 | Cirrus Logic, Inc. | Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate |
| US9911727B2 (en) | 2015-03-16 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strapping structure of memory circuit |
| US10340395B2 (en) * | 2017-05-01 | 2019-07-02 | Qualcomm Incorporated | Semiconductor variable capacitor using threshold implant region |
| CN110739301B (zh) * | 2019-09-11 | 2021-11-16 | 芯创智（北京）微电子有限公司 | 一种扩散电阻的版图结构 |
| TWI809384B (zh) * | 2020-04-28 | 2023-07-21 | 台灣積體電路製造股份有限公司 | 積體電路結構及其形成方法 |
| US12414311B2 (en) * | 2020-04-28 | 2025-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit with feol resistor |
| JP2022020311A (ja) * | 2020-07-20 | 2022-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 電子回路 |
| US12249601B2 (en) * | 2020-07-29 | 2025-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device, method, layout, and system |
| US20220238516A1 (en) * | 2021-01-25 | 2022-07-28 | Yanbiao Pan | Polysilicon resistor using reduced grain size polysilicon |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4384299A (en) * | 1976-10-29 | 1983-05-17 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
| JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
| US5135882A (en) * | 1989-07-31 | 1992-08-04 | Micron Technology, Inc. | Technique for forming high-value inter-nodal coupling resistance for rad-hard applications in a double-poly, salicide process using local interconnect |
| US5418174A (en) * | 1992-06-26 | 1995-05-23 | Sgs-Thomson Microelectronics, Inc. | Method of forming radiation hard integrated circuits |
| US5773871A (en) * | 1993-06-24 | 1998-06-30 | Northern Telecom Limited | Integrated circuit structure and method of fabrication thereof |
| US5665633A (en) * | 1995-04-06 | 1997-09-09 | Motorola, Inc. | Process for forming a semiconductor device having field isolation |
| JPH0964279A (ja) | 1995-08-28 | 1997-03-07 | Hitachi Ltd | 半導体集積回路装置 |
| CA2179246C (en) * | 1995-09-20 | 2000-10-24 | Pmc-Sierra Ltd. | Polysilicon defined diffused resistor |
| JPH10223750A (ja) * | 1997-02-06 | 1998-08-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE69738012T2 (de) * | 1996-11-26 | 2007-12-13 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleitervorrichtung und deren Herstellungsverfahren |
| US5795807A (en) * | 1996-12-20 | 1998-08-18 | Advanced Micro Devices | Semiconductor device having a group of high performance transistors and method of manufacture thereof |
| US6284599B1 (en) * | 1997-12-23 | 2001-09-04 | Texas Instruments Incorporated | Method to fabricate a semiconductor resistor in embedded flash memory application |
| US6165861A (en) * | 1998-09-14 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion |
| JP3023355B1 (ja) * | 1998-12-25 | 2000-03-21 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| JP3348070B2 (ja) * | 1999-04-21 | 2002-11-20 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6436747B1 (en) * | 1999-04-21 | 2002-08-20 | Matsushita Electtric Industrial Co., Ltd. | Method of fabricating semiconductor device |
| US6232104B1 (en) * | 1999-08-17 | 2001-05-15 | Dade Behring Inc. | Detection of differences in nucleic acids by inhibition of spontaneous DNA branch migration |
| TW471163B (en) * | 2000-08-17 | 2002-01-01 | United Microelectronics Corp | Manufacturing method and structure of thin film resistor having a high resistance value |
| US6365481B1 (en) * | 2000-09-13 | 2002-04-02 | Advanced Micro Devices, Inc. | Isotropic resistor protect etch to aid in residue removal |
| US6958523B2 (en) * | 2000-09-15 | 2005-10-25 | Texas Instruments Incorporated | On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits |
| JP2002184944A (ja) * | 2000-12-12 | 2002-06-28 | Mitsubishi Electric Corp | 半導体装置 |
| JP4982921B2 (ja) * | 2001-03-05 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP4803898B2 (ja) * | 2001-05-17 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2001
- 2001-03-05 JP JP2001059948A patent/JP4982921B2/ja not_active Expired - Fee Related
- 2001-09-24 US US09/960,495 patent/US7045865B2/en not_active Expired - Lifetime
-
2006
- 2006-03-21 US US11/384,244 patent/US20060175679A1/en not_active Abandoned
-
2008
- 2008-01-11 US US12/007,496 patent/US7821078B2/en not_active Expired - Lifetime
-
2010
- 2010-09-27 US US12/891,214 patent/US8089136B2/en not_active Expired - Fee Related