JP2014220491A - 薄膜抵抗体群およびそれを内蔵した多層配線基板 - Google Patents
薄膜抵抗体群およびそれを内蔵した多層配線基板 Download PDFInfo
- Publication number
- JP2014220491A JP2014220491A JP2014079301A JP2014079301A JP2014220491A JP 2014220491 A JP2014220491 A JP 2014220491A JP 2014079301 A JP2014079301 A JP 2014079301A JP 2014079301 A JP2014079301 A JP 2014079301A JP 2014220491 A JP2014220491 A JP 2014220491A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- resistor group
- resistors
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 351
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
2 絶縁層、1層目の絶縁層
3,3a,3b,3c,4,4a 薄膜抵抗体
5〜8 パッド電極
9 2層目の絶縁層
10 配線導体
21,22,23,24,25,26,27 ダミーパターン
100,200,1100,1200 薄膜抵抗体群
300 多層配線基板
W 線幅
L,L1 長さ
Claims (8)
- 絶縁層上に配置される複数の薄膜抵抗体からなる薄膜抵抗体群において、
前記薄膜抵抗体が帯状に並んで配置され、且つ、互いの薄膜抵抗体の少なくとも一部が噛み合うように蛇行して配置されることを特徴とする薄膜抵抗体群。 - 絶縁層上に配置される複数の薄膜抵抗体からなる薄膜抵抗体群において、
前記薄膜抵抗体の平面パターンがジグザグ状の屈曲した形状をしており、前記薄膜抵抗体が、互いに噛み合うように配置されることを特徴とする薄膜抵抗体群。 - 請求項1または2に記載した薄膜抵抗体群において、前記絶縁層上に、前記薄膜抵抗体群が配置される薄膜抵抗体領域と、前記薄膜抵抗体領域を囲む周囲領域とが設けられ、前記周囲領域に周囲領域用のダミーパターンが配置されることを特徴とする薄膜抵抗体群。
- 請求項1または2に記載した薄膜抵抗体群において、前記薄膜抵抗体群を構成する前記複数の薄膜抵抗体同士の間のスペースにスペース用のダミーパターンが配置されることを特徴とする薄膜抵抗体群。
- 請求項1または2に記載した薄膜抵抗体群において、前記絶縁層上に、前記薄膜抵抗体群が配置される薄膜抵抗体領域と、前記薄膜抵抗体領域を囲む周囲領域とが設けられ、前記周囲領域に周囲領域用のダミーパターンが配置されるとともに、前記薄膜抵抗体群を構成する前記複数の薄膜抵抗体同士の間のスペースにスペース用のダミーパターンが配置されることを特徴とする薄膜抵抗体群。
- 半導体基板と、該半導体基板上に配置される第1層目の絶縁層と、該第1層目の絶縁層上に少なくとも配置される請求項1ないし5のいずれか1項に記載した薄膜抵抗体群と、該薄膜抵抗体群上に配置される第2層目の絶縁層と、該第2層目の絶縁層上に少なくとも配置される配線導体と、を有することを特徴とする多層配線基板。
- 絶縁基板と、該絶縁板上に少なくとも配置される請求項1ないし5のいずれか1項に記載した薄膜抵抗体群と、該薄膜抵抗体群上に配置される絶縁層と、該絶縁層上に少なくとも配置される配線導体と、を有することを特徴とする多層配線基板。
- 前記半導体基板に半導体素子が形成されることを特徴とする請求項6に記載の多層配線基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014079301A JP2014220491A (ja) | 2013-04-09 | 2014-04-08 | 薄膜抵抗体群およびそれを内蔵した多層配線基板 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013081298 | 2013-04-09 | ||
JP2013081298 | 2013-04-09 | ||
JP2014079301A JP2014220491A (ja) | 2013-04-09 | 2014-04-08 | 薄膜抵抗体群およびそれを内蔵した多層配線基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014220491A true JP2014220491A (ja) | 2014-11-20 |
Family
ID=51938642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014079301A Withdrawn JP2014220491A (ja) | 2013-04-09 | 2014-04-08 | 薄膜抵抗体群およびそれを内蔵した多層配線基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2014220491A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180054257A (ko) * | 2016-11-15 | 2018-05-24 | 삼성전기주식회사 | 저항체를 포함하는 전자 부품 |
WO2023085026A1 (ja) * | 2021-11-12 | 2023-05-19 | ローム株式会社 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6120003U (ja) * | 1984-07-09 | 1986-02-05 | 株式会社アドバンテスト | 薄膜抵抗器 |
JPS63310219A (ja) * | 1987-06-11 | 1988-12-19 | Nec Corp | 並列比較形a−d変換回路 |
JPH07245303A (ja) * | 1994-03-08 | 1995-09-19 | Fujitsu Ltd | 金属薄膜抵抗体の製造方法 |
JPH08223042A (ja) * | 1995-02-16 | 1996-08-30 | Sanyo Electric Co Ltd | 逐次比較型adコンバータの集積回路 |
JPH08241959A (ja) * | 1995-03-02 | 1996-09-17 | Toshiba Corp | 半導体装置 |
JP2002261244A (ja) * | 2001-03-05 | 2002-09-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2010177506A (ja) * | 2009-01-30 | 2010-08-12 | Nec Corp | 配線基板及びその製造方法 |
-
2014
- 2014-04-08 JP JP2014079301A patent/JP2014220491A/ja not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6120003U (ja) * | 1984-07-09 | 1986-02-05 | 株式会社アドバンテスト | 薄膜抵抗器 |
JPS63310219A (ja) * | 1987-06-11 | 1988-12-19 | Nec Corp | 並列比較形a−d変換回路 |
JPH07245303A (ja) * | 1994-03-08 | 1995-09-19 | Fujitsu Ltd | 金属薄膜抵抗体の製造方法 |
JPH08223042A (ja) * | 1995-02-16 | 1996-08-30 | Sanyo Electric Co Ltd | 逐次比較型adコンバータの集積回路 |
JPH08241959A (ja) * | 1995-03-02 | 1996-09-17 | Toshiba Corp | 半導体装置 |
JP2002261244A (ja) * | 2001-03-05 | 2002-09-13 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2010177506A (ja) * | 2009-01-30 | 2010-08-12 | Nec Corp | 配線基板及びその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180054257A (ko) * | 2016-11-15 | 2018-05-24 | 삼성전기주식회사 | 저항체를 포함하는 전자 부품 |
JP2018082141A (ja) * | 2016-11-15 | 2018-05-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 抵抗体を含む電子部品 |
KR102527722B1 (ko) * | 2016-11-15 | 2023-05-02 | 삼성전기주식회사 | 저항체를 포함하는 전자 부품 |
WO2023085026A1 (ja) * | 2021-11-12 | 2023-05-19 | ローム株式会社 | 半導体装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6551305B2 (ja) | 積層インダクタ | |
US10153079B2 (en) | Laminated coil component and method of manufacturing the same | |
JP5275393B2 (ja) | 積層型セラミックコンデンサ | |
US7408435B2 (en) | Coil component | |
JP2010165780A (ja) | 薄膜抵抗素子の製造方法 | |
US9576732B2 (en) | Multilayer ceramic capacitor and mounting board therefor | |
CN103443635A (zh) | 具有改进的相位精度的电阻分压器 | |
JP2014220491A (ja) | 薄膜抵抗体群およびそれを内蔵した多層配線基板 | |
JP5817954B1 (ja) | 部品内蔵基板 | |
KR20150128149A (ko) | 공통 모드 필터 및 그 제조 방법 | |
CN107452460B (zh) | 电子部件 | |
JP6175504B2 (ja) | スイッチ | |
JP2006165380A (ja) | 可変容量コンデンサ | |
WO2011058826A1 (ja) | 可変容量装置 | |
TWI517768B (zh) | 電性膜體之製造方法 | |
JP4738182B2 (ja) | 薄膜コンデンサ | |
KR20200052359A (ko) | 인덕터 스택 구조 | |
US20070120266A1 (en) | Chip resistor | |
JP2007165358A (ja) | チップ型コンデンサ | |
WO2024014212A1 (ja) | 電子部品 | |
JP4178896B2 (ja) | Lr複合部品 | |
JP2009111265A (ja) | 半導体装置 | |
KR101558132B1 (ko) | 박막형 코일 부품 및 그 제조 방법 | |
JP6319572B2 (ja) | アンテナ装置 | |
JP2003059725A (ja) | Lr複合部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20151005 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20151005 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170403 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180130 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20180327 |