JP2002261244A5 - - Google Patents

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Publication number
JP2002261244A5
JP2002261244A5 JP2001059948A JP2001059948A JP2002261244A5 JP 2002261244 A5 JP2002261244 A5 JP 2002261244A5 JP 2001059948 A JP2001059948 A JP 2001059948A JP 2001059948 A JP2001059948 A JP 2001059948A JP 2002261244 A5 JP2002261244 A5 JP 2002261244A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001059948A
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JP2002261244A (ja
JP4982921B2 (ja
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Priority claimed from JP2001059948A external-priority patent/JP4982921B2/ja
Priority to JP2001059948A priority Critical patent/JP4982921B2/ja
Application filed filed Critical
Priority to US09/960,495 priority patent/US7045865B2/en
Publication of JP2002261244A publication Critical patent/JP2002261244A/ja
Priority to US11/384,244 priority patent/US20060175679A1/en
Priority to US12/007,496 priority patent/US7821078B2/en
Publication of JP2002261244A5 publication Critical patent/JP2002261244A5/ja
Priority to US12/891,214 priority patent/US8089136B2/en
Publication of JP4982921B2 publication Critical patent/JP4982921B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001059948A 2001-03-05 2001-03-05 半導体装置及びその製造方法 Expired - Fee Related JP4982921B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001059948A JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法
US09/960,495 US7045865B2 (en) 2001-03-05 2001-09-24 Semiconductor device with resistor elements formed on insulating film
US11/384,244 US20060175679A1 (en) 2001-03-05 2006-03-21 Semiconductor device and method for manufacturing the same
US12/007,496 US7821078B2 (en) 2001-03-05 2008-01-11 Semiconductor device having resistor elements and method for manufacturing the same
US12/891,214 US8089136B2 (en) 2001-03-05 2010-09-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001059948A JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012036588A Division JP5582154B2 (ja) 2012-02-22 2012-02-22 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002261244A JP2002261244A (ja) 2002-09-13
JP2002261244A5 true JP2002261244A5 (ja) 2008-04-24
JP4982921B2 JP4982921B2 (ja) 2012-07-25

Family

ID=18919443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001059948A Expired - Fee Related JP4982921B2 (ja) 2001-03-05 2001-03-05 半導体装置及びその製造方法

Country Status (2)

Country Link
US (4) US7045865B2 (ja)
JP (1) JP4982921B2 (ja)

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JP4982921B2 (ja) * 2001-03-05 2012-07-25 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
US7135376B2 (en) * 2003-12-24 2006-11-14 Oki Electric Industry Co., Ltd. Resistance dividing circuit and manufacturing method thereof
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CN104882442B (zh) * 2005-04-26 2018-09-11 瑞萨电子株式会社 半导体装置及其制造方法和半导体制造用掩模、光接近处理方法
US7920403B2 (en) * 2005-07-27 2011-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. ROM cell array structure
JP4991134B2 (ja) 2005-09-15 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2007250705A (ja) * 2006-03-15 2007-09-27 Nec Electronics Corp 半導体集積回路装置及びダミーパターンの配置方法
JP5005241B2 (ja) 2006-03-23 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2009016686A (ja) * 2007-07-06 2009-01-22 Toshiba Corp 高周波用トランジスタ
US8598630B2 (en) * 2008-10-06 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photo alignment mark for a gate last process
JP2010109233A (ja) * 2008-10-31 2010-05-13 Renesas Technology Corp 半導体装置
JP5601026B2 (ja) * 2010-05-21 2014-10-08 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5554736B2 (ja) * 2011-03-09 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置
JP5582154B2 (ja) * 2012-02-22 2014-09-03 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
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JP2014220491A (ja) * 2013-04-09 2014-11-20 富士電機株式会社 薄膜抵抗体群およびそれを内蔵した多層配線基板
US9379175B2 (en) 2013-12-26 2016-06-28 Mediatek Inc. Integrated circuits and fabrication methods thereof
US9761461B2 (en) * 2014-04-16 2017-09-12 Cirrus Logic, Inc. Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate
US9911727B2 (en) 2015-03-16 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strapping structure of memory circuit
US10340395B2 (en) * 2017-05-01 2019-07-02 Qualcomm Incorporated Semiconductor variable capacitor using threshold implant region
CN110739301B (zh) * 2019-09-11 2021-11-16 芯创智（北京）微电子有限公司 一种扩散电阻的版图结构
US20210335991A1 (en) * 2020-04-28 2021-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit with feol resistor
TWI809384B (zh) * 2020-04-28 2023-07-21 台灣積體電路製造股份有限公司 積體電路結構及其形成方法
US20220037312A1 (en) * 2020-07-29 2022-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device, method, layout, and system
US20220238516A1 (en) * 2021-01-25 2022-07-28 Yanbiao Pan Polysilicon resistor using reduced grain size polysilicon

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