JP4966986B2 - リトグラフィー投影装置 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Optical Transform (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Description
* マスク:マスクの概念は、リトグラフィーにおいて周知であり、種々のハイブリッドマスクだけでなく、2進交互位相変位および減衰位相変位のような型式のマスクを含む。このマスクを放射線ビームに配置することにより、マスクのパターンに応じて、選択的に、マスクに衝突する放射線の透過(透過性マスクの場合)、あるいは、反射(反射性マスクの場合)が生じる。マスクの場合、支持構造体は、一般的に、マスクテーブルであり、マスクテーブルにより、マスクは、入射放射線ビームの所望の位置で保持可能であり、望む場合、ビームに対して移動可能である。
* プログラマブルミラー配列:このデバイスの例は、粘弾性制御層と反射面とを有するマトリックスアドレス可能な面である。この装置の背後にある基本的概念は、(例えば、)反射面のアドレス領域は、入射光を回折光として反射し、非アドレス領域は、入射光を非回折光として反射する。適切なフィルタを使用して、上記非回折光は、反射ビームからフィルタ除去され、回折光のみを残すことができ、このように、ビームは、マトリックスアドレス面のアドレスパターンにしたがってパターンが付与される。必要なマドリックスアドレス指定は、適切な電子手段を使用して行うことができる。このミラー配列に関する更に詳しい情報は、例えば米国特許第5296891号および第5523193号明細書(それらの記載内容を本明細書の記載として援用する)で確認できる。プログラマブル(プログラム可能な)ミラー配列の場合、上記支持構造体は、例えば、固設することができる、あるいは必要な場合、移動することができるフレームまたはテーブルとして具体化することができる。
* プログラマブルLCD配列:この構造の例が、本明細書中に参考用に組込まれている米国特許第5229872号に示されている。上述のように、この場合の支持構造体は、例えば、固設することができる、あるいは必要な場合、移動することができるフレームまたはテーブルとして具体化することができる。単純化のために、この明細書の残部は、所定の箇所で、特にマスクおよびマスクテーブルに関連する例に向けることができるが、しかし、この例に記載されている一般的原理は、上述のようなパターン付与手段のより広い文脈で理解されるべきである。
ここで、
P: 大気圧(Pa)
T: 大気温(℃)
H: 水蒸気圧(Pa)
C: CO2量(ppm)
1.ステップモードにおいて、マスクテーブルMTは、事実上静止状に維持され、全マスク像が、1回の作動(すなわち、単一フラッシュ)でターゲット部C上に投影される。基板テーブルWTは、この後、xおよび/またはy方向に変位され、異なるターゲット部Cが、ビームPBによって照射される;
2.走査モードにおいて、所定のターゲット部Cが単一フラッシュで露光されない点を除いて、ほぼ同じ説明が適用される。その代わりに、マスクテーブルMTは、速度vで所定方向(いわゆる、走査方向、例えば、y方向)に移動可能であり、これにより、投影ビームPBは、マスク像全体を走査し;同時に、基板テーブルWTは、速度V=Mvで同方向または反対方向に同時に移動し、ここで、MはレンズPLの倍率(一般的に、1/4または1/5)である。このように、比較的大きなターゲット部Cの露光を、分解能について妥協することなく行なうことができる。
12,13 グリッド格子
PB 投影ビーム
LA 放射線源
MT マスクテーブル
MA マスク
WT 基板テーブル
W 基板
PL 投影装置
C ターゲット部
IL 照明系
Ex ビームエキスパンダー
MAM 調整手段
IN 積分器
CO コンデンサ
IF 干渉式測定手段
HS ハイト(高さ)センサ
Claims (12)
- 放射線投影ビームを与える放射装置と、
所望のパターンにしたがって投影ビームにパターンを付与する作用を果たすパターン付与手段を支える支持構造体と、
基板を保持する基板テーブルと、
基板のターゲット部にパターン付与されたビームを投影する投影装置とを含むリトグラフィー投影装置において、
前記支持構造体と前記基板テーブルの一方を含む可動対象物の位置を少なくとも自由度2で測定する変位測定装置を有し、
前記変位測定装置は、前記可動対象物に装着された少なくとも1つのグリッド格子と、自由度2で前記グリッド格子の変位を測定する少なくとも1つのエンコーダヘッドとを含み、
前記グリッド格子は、前記支持構造体によって支えられる前記パターン付与手段あるいは前記基板テーブルによって保持される基板の機能面と実質的に同一平面になるように配置されていることを特徴とするリトグラフィー投影装置。 - 前記変位測定装置は、離隔した位置で前記可動対象物に装着された2つのグリッド格子と、それぞれ前記グリッド格子のそれぞれの変位を測定する2つのエンコーダヘッドとを備える請求項1に記載されたリトグラフィー投影装置。
- 前記グリッド格子が、前記可動対象物の本体内に直接組込まれている請求項1または請求項2に記載されたリトグラフィー投影装置。
- 放射線投影ビームを与える放射装置と、
所望パターンにしたがって投影ビームにパターンを付与する作用を果たすパターン付与手段を支える支持構造体と、
基板を保持する基板テーブルと、
基板のターゲット部にパターンが付与されたビームを投影する投影装置とを含むリトグラフィー投影装置において、
前記支持構造体と前記基板テーブルの一方を含む可動対象物の位置を少なくとも自由度2で測定する変位測定装置を含み、
前記変位測定装置は、基準系に装着された少なくとも1つのグリッド格子と、前記グリッド格子に対する前記可動対象物の変位を自由度2で測定するために前記可動対象物に装着された少なくとも1つのエンコーダヘッドとを含み、
前記グリッド格子は、前記支持構造体によって支えられる前記パターン付与手段あるいは前記基板テーブルによって保持される基板の機能面と実質的に同一平面になるように配置されていることを特徴とするリトグラフィー投影装置。 - 前記可動対象物は、走査描画のために第1方向に移動可能であり、前記グリッド格子は、前記第1方向の前記可動対象物の移動範囲よりも大きなあるいは等しい長さを前記第1方向に有する請求項1から請求項4までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記変位測定装置は、さらに、前記グリッド格子と理想的グリッド格子との間の差を表す訂正情報を記憶するメモリーと前記エンコーダヘッドによって出力された測定を訂正するデータ処理手段とを含む請求項1から請求項5までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記変位測定装置は、さらに、前記グリッド格子およびエンコーダヘッドによって測定されない自由度において前記可動対象物の位置を測定する1または複数の容量性または光センサを含む請求項1から請求項6までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記グリッド格子は、前記可動対象物の基準位置を規定する各エンコーダヘッドによって検出可能な基準マークを含む請求項1から請求項7までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記変位測定装置は、さらに、前記エンコーダヘッドの出力を補間(内挿)する補間器を含む請求項1から請求項8までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記支持構造体は、マスクを保持するマスクテーブルを含む請求項1から請求項9までのいずれか1項に記載されたリトグラフィー投影装置。
- 前記放射装置は、放射線源を含む請求項1から請求項10までのいずれか1項に記載されたリトグラフィー投影装置。
- 放射線感受性材料層によって少なくとも一部が覆われる基板を提供し、
放射装置を使用して放射線投影ビームを提供し、
パターン付与手段を使用して、投影ビームのその横断面にパターンを形成し、
放射線感受性材料層のターゲット部に、パターンが付与された放射線ビームを投影するステップを有するデバイス製造法であって、
支持構造体または基板テーブルに装着された少なくとも1つのグリッド格子と少なくとも1つのエンコーダヘッドとを使用して、前記グリッド格子が前記支持構造体によって支えられる前記パターン付与手段あるいは前記基板テーブルによって保持される前記基板の機能面と実質的に同一平面になるように配置し、前記支持構造体および前記基板テーブルの1つの変位を少なくとも自由度2で測定するステップによって特徴づけられるデバイス製造方法。
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EP00307306 | 2000-08-24 | ||
EP00307306.1 | 2000-08-24 |
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JP2001251788A Division JP4276801B2 (ja) | 2000-08-24 | 2001-08-22 | リトグラフィー投影装置 |
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JP2009164618A JP2009164618A (ja) | 2009-07-23 |
JP4966986B2 true JP4966986B2 (ja) | 2012-07-04 |
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JP2001251788A Expired - Fee Related JP4276801B2 (ja) | 2000-08-24 | 2001-08-22 | リトグラフィー投影装置 |
JP2006347587A Expired - Fee Related JP4854499B2 (ja) | 2000-08-24 | 2006-12-25 | リトグラフィー投影装置の較正方法 |
JP2009016792A Expired - Lifetime JP4966986B2 (ja) | 2000-08-24 | 2009-01-28 | リトグラフィー投影装置 |
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JP2006347587A Expired - Fee Related JP4854499B2 (ja) | 2000-08-24 | 2006-12-25 | リトグラフィー投影装置の較正方法 |
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US (2) | US6819425B2 (ja) |
JP (3) | JP4276801B2 (ja) |
KR (1) | KR100592569B1 (ja) |
DE (1) | DE60138252D1 (ja) |
TW (1) | TW527526B (ja) |
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US7561270B2 (en) * | 2000-08-24 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
TW527526B (en) * | 2000-08-24 | 2003-04-11 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7289212B2 (en) * | 2000-08-24 | 2007-10-30 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufacturing thereby |
US6986211B2 (en) * | 2003-03-14 | 2006-01-17 | Applied Precision, Llc | System and method of planar positioning |
JP4289961B2 (ja) * | 2003-09-26 | 2009-07-01 | キヤノン株式会社 | 位置決め装置 |
US7102729B2 (en) * | 2004-02-03 | 2006-09-05 | Asml Netherlands B.V. | Lithographic apparatus, measurement system, and device manufacturing method |
JP4464166B2 (ja) * | 2004-02-27 | 2010-05-19 | キヤノン株式会社 | 測定装置を搭載した露光装置 |
US7256871B2 (en) | 2004-07-27 | 2007-08-14 | Asml Netherlands B.V. | Lithographic apparatus and method for calibrating the same |
US7349069B2 (en) * | 2005-04-20 | 2008-03-25 | Asml Netherlands B.V. | Lithographic apparatus and positioning apparatus |
CN100342211C (zh) * | 2005-08-26 | 2007-10-10 | 哈尔滨工业大学 | 双光栅位移传感器计数方式的位置检测装置及其检测方法 |
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US7417710B2 (en) * | 2005-09-26 | 2008-08-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7440113B2 (en) | 2005-12-23 | 2008-10-21 | Agilent Technologies, Inc. | Littrow interferometer |
JPWO2007083758A1 (ja) * | 2006-01-19 | 2009-06-11 | 株式会社ニコン | 移動体駆動方法及び移動体駆動システム、パターン形成方法及びパターン形成装置、露光方法及び露光装置、並びにデバイス製造方法 |
EP3293577A1 (en) | 2006-02-21 | 2018-03-14 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
EP3115844B1 (en) | 2006-02-21 | 2018-08-15 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
JP5177674B2 (ja) | 2006-02-21 | 2013-04-03 | 株式会社ニコン | 測定装置及び方法、パターン形成装置及び方法、並びにデバイス製造方法 |
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-
2001
- 2001-08-16 TW TW090120118A patent/TW527526B/zh not_active IP Right Cessation
- 2001-08-22 KR KR1020010050656A patent/KR100592569B1/ko active IP Right Grant
- 2001-08-22 DE DE60138252T patent/DE60138252D1/de not_active Expired - Lifetime
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- 2001-08-22 JP JP2001251788A patent/JP4276801B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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KR100592569B1 (ko) | 2006-06-26 |
JP2007180553A (ja) | 2007-07-12 |
US20020041380A1 (en) | 2002-04-11 |
JP2002151405A (ja) | 2002-05-24 |
US20080309950A1 (en) | 2008-12-18 |
JP4854499B2 (ja) | 2012-01-18 |
JP2009164618A (ja) | 2009-07-23 |
TW527526B (en) | 2003-04-11 |
JP4276801B2 (ja) | 2009-06-10 |
US6819425B2 (en) | 2004-11-16 |
KR20020016531A (ko) | 2002-03-04 |
US7633619B2 (en) | 2009-12-15 |
DE60138252D1 (de) | 2009-05-20 |
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