JP4925958B2 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
- Publication number
- JP4925958B2 JP4925958B2 JP2007195905A JP2007195905A JP4925958B2 JP 4925958 B2 JP4925958 B2 JP 4925958B2 JP 2007195905 A JP2007195905 A JP 2007195905A JP 2007195905 A JP2007195905 A JP 2007195905A JP 4925958 B2 JP4925958 B2 JP 4925958B2
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- JP
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- Prior art keywords
- crystal
- rare earth
- earth element
- group
- magnesium
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 55
- 239000013078 crystal Substances 0.000 claims description 356
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 109
- 239000002245 particle Substances 0.000 claims description 92
- 239000010410 layer Substances 0.000 claims description 67
- 239000011777 magnesium Substances 0.000 claims description 67
- 229910052749 magnesium Inorganic materials 0.000 claims description 66
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 63
- 239000000919 ceramic Substances 0.000 claims description 53
- 239000011575 calcium Substances 0.000 claims description 47
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 33
- 229910002113 barium titanate Inorganic materials 0.000 claims description 33
- 239000002344 surface layer Substances 0.000 claims description 25
- 229910052727 yttrium Inorganic materials 0.000 claims description 22
- 229910052720 vanadium Inorganic materials 0.000 claims description 20
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 20
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052771 Terbium Inorganic materials 0.000 claims description 13
- 239000011572 manganese Substances 0.000 claims description 13
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 13
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 8
- 229910052689 Holmium Inorganic materials 0.000 claims description 8
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 8
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 description 83
- 238000009413 insulation Methods 0.000 description 41
- 238000010304 firing Methods 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 238000005498 polishing Methods 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000006104 solid solution Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000000921 elemental analysis Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910018068 Li 2 O Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011246 composite particle Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
3 外部電極
5 誘電体層
7 内部電極層
9 結晶粒子
9a 第1の結晶群を構成する結晶粒子
9b 第2の結晶群を構成する結晶粒子
21 セラミックグリーンシート
23 内部電極パターン
25 セラミックパターン
29 積層体
Claims (4)
- チタン酸バリウムを主成分とし、カルシウムと、マグネシウムと、バナジウムと、マンガンと、イットリウムまたはホルミウムからなる第1希土類元素と、テルビウムまたはジスプロシウムからなる第2希土類元素とを含む誘電体磁器よりなる誘電体層と、内部電極層とを交互に積層して形成された積層セラミックコンデンサであって、前記誘電体磁器を構成する結晶は、前記チタン酸バリウムを主成分とし、前記カルシウムの濃度が0.2原子%以下の結晶粒子からなる第1の結晶群と、前記チタン酸バリウムを主成分とし、前記カルシウムの濃度が0.4原子%以上の結晶粒子からなる第2の結晶群とからなり、前記第1の結晶群および前記第2の結晶群の各結晶粒子は、さらに前記マグネシウム、前記バナジウム、前記マンガン、前記第1希土類元素および前記第2希土類元素を含有するとともに、前記第1の結晶群を構成する結晶粒子の表層部の前記マグネシウムおよび前記第1希土類元素の各濃度に対する前記第1の結晶群を構成する結晶粒子の中央部に含まれる前記マグネシウムおよび前記第1希土類元素の各濃度の比のそれぞれが、前記第2の結晶群を構成する結晶粒子の表層部の前記マグネシウムおよび前記第1希土類元素の各濃度に対する前記第2の結晶群を構成する結晶粒子の中央部に含まれる前記マグネシウムおよび前記第1希土類元素の各濃度の比のそれぞれよりも大きく、かつ、前記誘電体磁器の表面を研磨したときの研磨面において、前記第1の結晶群を構成する結晶粒子が占める面積をa、前記第2の結晶群を構成する結晶粒子が占める面積をbとしたとき、b/(a+b)が0.5〜0.8であることを特徴とする積層セラミックコンデンサ。
- 前記第1希土類元素がイットリウムであるとともに、前記第2希土類元素がテルビウムであることを特徴とする請求項1に記載の積層セラミックコンデンサ。
- 前記第1の結晶群を構成する結晶粒子の平均結晶粒径が前記第2の結晶群を構成する結晶粒子の平均結晶粒径よりも大きいことを特徴とする請求項1または2に記載の積層セラミックコンデンサ。
- 前記誘電体磁器は、前記チタン酸バリウムを構成するチタン100モルに対して、前記マグネシウムをMgO換算で0.5〜1モル、前記第1希土類元素をRE2O3換算で0.3〜1.5モル、前記第2希土類元素をRE2O3換算で0.1〜0.3モル、前記マンガンをMnO換算で0.1〜0.3モル、および前記バナジウムをV2O5換算で0.1〜0.4モル含有することを特徴とする請求項3に記載の積層セラミックコンデンサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007195905A JP4925958B2 (ja) | 2007-07-27 | 2007-07-27 | 積層セラミックコンデンサ |
CN2007801000365A CN101765894B (zh) | 2007-07-27 | 2007-11-29 | 叠层陶瓷电容器 |
PCT/JP2007/073094 WO2009016775A1 (ja) | 2007-07-27 | 2007-11-29 | 積層セラミックコンデンサ |
TW096145837A TW200905704A (en) | 2007-07-27 | 2007-11-29 | Laminated ceramic capacitor |
US12/670,855 US8208240B2 (en) | 2007-07-27 | 2007-11-29 | Laminated ceramic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007195905A JP4925958B2 (ja) | 2007-07-27 | 2007-07-27 | 積層セラミックコンデンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009032934A JP2009032934A (ja) | 2009-02-12 |
JP4925958B2 true JP4925958B2 (ja) | 2012-05-09 |
Family
ID=40304020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007195905A Expired - Fee Related JP4925958B2 (ja) | 2007-07-27 | 2007-07-27 | 積層セラミックコンデンサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8208240B2 (ja) |
JP (1) | JP4925958B2 (ja) |
CN (1) | CN101765894B (ja) |
TW (1) | TW200905704A (ja) |
WO (1) | WO2009016775A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101517672B (zh) * | 2006-09-27 | 2012-05-16 | 京瓷株式会社 | 叠层陶瓷电容器及其制造方法 |
KR101064243B1 (ko) | 2006-11-29 | 2011-09-14 | 쿄세라 코포레이션 | 적층 세라믹 콘덴서 |
CN101960543B (zh) * | 2008-03-24 | 2012-01-25 | 京瓷株式会社 | 层叠陶瓷电容器 |
JP5578882B2 (ja) * | 2010-02-25 | 2014-08-27 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP5146475B2 (ja) * | 2010-03-11 | 2013-02-20 | Tdk株式会社 | 誘電体磁器組成物およびセラミック電子部品 |
JP2012094696A (ja) * | 2010-10-27 | 2012-05-17 | Kyocera Corp | 積層セラミックコンデンサ |
JP5701013B2 (ja) * | 2010-10-28 | 2015-04-15 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP5668572B2 (ja) * | 2011-03-29 | 2015-02-12 | Tdk株式会社 | 誘電体磁器組成物およびセラミック電子部品 |
KR101536678B1 (ko) * | 2011-04-07 | 2015-07-14 | 가부시키가이샤 무라타 세이사쿠쇼 | 전자부품 |
JP5832255B2 (ja) * | 2011-11-29 | 2015-12-16 | 京セラ株式会社 | コンデンサ |
WO2013089269A1 (ja) * | 2011-12-17 | 2013-06-20 | 京セラ株式会社 | コンデンサ |
KR101792268B1 (ko) * | 2012-03-13 | 2017-11-01 | 삼성전기주식회사 | 적층 세라믹 전자 부품 |
JP5541318B2 (ja) * | 2012-06-25 | 2014-07-09 | Tdk株式会社 | 誘電体磁器組成物およびセラミック電子部品 |
CN104520950B (zh) * | 2012-08-09 | 2017-03-29 | 株式会社村田制作所 | 层叠陶瓷电容器及其制造方法 |
KR101376924B1 (ko) * | 2012-09-28 | 2014-03-20 | 삼성전기주식회사 | 유전체 조성물 및 이를 이용한 적층 세라믹 전자부품 |
US9478356B2 (en) * | 2012-11-13 | 2016-10-25 | Kanto Denka Kogyo Co., Ltd. | Coated barium titanate particulate and production method for same |
KR101883027B1 (ko) * | 2014-12-16 | 2018-07-27 | 삼성전기주식회사 | 유전체 자기 조성물, 유전체 재료 및 이를 포함하는 적층 세라믹 커패시터 |
CN108352251B (zh) * | 2015-10-28 | 2020-06-02 | 京瓷株式会社 | 电容器 |
KR101792368B1 (ko) * | 2015-12-24 | 2017-11-20 | 삼성전기주식회사 | 유전체 자기 조성물, 유전체 재료 및 이를 포함하는 적층 세라믹 커패시터 |
JP2018022750A (ja) * | 2016-08-02 | 2018-02-08 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
KR102497972B1 (ko) * | 2018-08-09 | 2023-02-09 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조 방법 |
KR102222944B1 (ko) * | 2019-02-01 | 2021-03-05 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
US11309129B2 (en) * | 2019-06-28 | 2022-04-19 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and multilayer ceramic electronic component having the same |
KR102523255B1 (ko) | 2019-06-28 | 2023-04-19 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층형 전자부품 |
KR102433617B1 (ko) | 2019-06-28 | 2022-08-18 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층형 전자부품 및 적층형 전자부품의 제조 방법 |
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JP7431858B2 (ja) * | 2019-12-23 | 2024-02-15 | 京セラ株式会社 | コンデンサ |
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JP4506233B2 (ja) * | 2004-03-30 | 2010-07-21 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
CN1281549C (zh) * | 2004-05-14 | 2006-10-25 | 北京科技大学 | 镍内电极钛酸钡基多层陶瓷电容器纳米瓷粉的制备方法 |
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TWI347624B (en) * | 2004-07-29 | 2011-08-21 | Kyocera Corp | Laminated ceramic condenser and manufacturing method thereof |
JP4502741B2 (ja) | 2004-07-29 | 2010-07-14 | 京セラ株式会社 | 積層セラミックコンデンサおよびその製法 |
US7433173B2 (en) * | 2004-11-25 | 2008-10-07 | Kyocera Corporation | Multilayer ceramic capacitor and method for manufacturing the same |
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