JP4874461B2 - シュードモルフィック高電子移動度トランジスター - Google Patents

シュードモルフィック高電子移動度トランジスター Download PDF

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Publication number
JP4874461B2
JP4874461B2 JP2000572921A JP2000572921A JP4874461B2 JP 4874461 B2 JP4874461 B2 JP 4874461B2 JP 2000572921 A JP2000572921 A JP 2000572921A JP 2000572921 A JP2000572921 A JP 2000572921A JP 4874461 B2 JP4874461 B2 JP 4874461B2
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layer
etching
etch
etch stop
contact
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Expired - Lifetime
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JP2000572921A
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Japanese (ja)
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JP2002526922A5 (enExample
JP2002526922A (ja
Inventor
トング，エルサ・ケイ
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Raytheon Co
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Raytheon Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2000572921A 1998-09-29 1999-09-15 シュードモルフィック高電子移動度トランジスター Expired - Lifetime JP4874461B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/163,124 US6087207A (en) 1998-09-29 1998-09-29 Method of making pseudomorphic high electron mobility transistors
US09/163,124 1998-09-29
PCT/US1999/021135 WO2000019512A1 (en) 1998-09-29 1999-09-15 Pseudomorphic high electron mobility transistors

Publications (3)

Publication Number Publication Date
JP2002526922A JP2002526922A (ja) 2002-08-20
JP2002526922A5 JP2002526922A5 (enExample) 2006-07-27
JP4874461B2 true JP4874461B2 (ja) 2012-02-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000572921A Expired - Lifetime JP4874461B2 (ja) 1998-09-29 1999-09-15 シュードモルフィック高電子移動度トランジスター

Country Status (6)

Country Link
US (1) US6087207A (enExample)
EP (2) EP1131849B1 (enExample)
JP (1) JP4874461B2 (enExample)
AU (1) AU5923899A (enExample)
DE (1) DE69930135T2 (enExample)
WO (1) WO2000019512A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703638B2 (en) * 2001-05-21 2004-03-09 Tyco Electronics Corporation Enhancement and depletion-mode phemt device having two ingap etch-stop layers
JP4371668B2 (ja) * 2003-02-13 2009-11-25 三菱電機株式会社 半導体装置
JP2007534154A (ja) * 2003-10-20 2007-11-22 ビノプティクス・コーポレイション 表面放射入射光子デバイス
JP2008511980A (ja) * 2004-08-31 2008-04-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層構造に多段リセスを形成する方法、及び多段リセスゲートを具備した電界効果トランジスタ
US20060175631A1 (en) * 2005-02-04 2006-08-10 Raytheon Company Monolithic integrated circuit having enhanced breakdown voltage
JP2008060397A (ja) * 2006-08-31 2008-03-13 Nec Electronics Corp 電界効果トランジスタおよびその製造方法
KR100853166B1 (ko) * 2007-01-30 2008-08-20 포항공과대학교 산학협력단 전계효과형 화합물 반도체 소자의 제조 방법
JP2010135590A (ja) * 2008-12-05 2010-06-17 Renesas Electronics Corp 電界効果トランジスタ
GB201112330D0 (en) 2011-07-18 2011-08-31 Epigan Nv Method for growing III-V epitaxial layers and semiconductor structure
US8901606B2 (en) 2012-04-30 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
US8853743B2 (en) 2012-11-16 2014-10-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
EP3199590A4 (en) * 2014-09-26 2018-04-25 Sekisui Chemical Co., Ltd. Flame-retardant urethane resin composition
US9461159B1 (en) 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
WO2018154754A1 (ja) * 2017-02-27 2018-08-30 三菱電機株式会社 半導体装置及びその製造方法
US11145735B2 (en) 2019-10-11 2021-10-12 Raytheon Company Ohmic alloy contact region sealing layer
CN113363254B (zh) * 2021-06-02 2024-06-18 厦门市三安集成电路有限公司 一种半导体器件及其制备方法
CN113363255B (zh) * 2021-06-02 2024-02-27 厦门市三安集成电路有限公司 一种半导体器件及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350839A (ja) * 1989-07-19 1991-03-05 Fujitsu Ltd 化合物半導体装置及びその製造方法
JPH05251472A (ja) * 1992-01-09 1993-09-28 Mitsubishi Electric Corp 半導体装置
JPH05267276A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd ＩｎＧａＰのエッチング方法及びそのエッチング方法を用いた半導体装置の製造方法
JPH0831844A (ja) * 1994-07-11 1996-02-02 Murata Mfg Co Ltd 半導体装置の製造方法
JPH09246532A (ja) * 1996-03-14 1997-09-19 Fujitsu Ltd 化合物半導体装置の製造方法
JPH1050729A (ja) * 1996-07-29 1998-02-20 Mitsubishi Electric Corp 半導体装置，及びその製造方法
JPH10209434A (ja) * 1997-01-23 1998-08-07 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合型電界効果トランジスタとその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (ja) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp 電界効果トランジスタ
JPH04167439A (ja) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JP2523985B2 (ja) * 1990-11-16 1996-08-14 三菱電機株式会社 半導体装置の製造方法
JPH0582560A (ja) * 1991-09-20 1993-04-02 Sony Corp 電界効果型トランジスタの製造方法
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
US5352909A (en) * 1991-12-19 1994-10-04 Nec Corporation Field effect transistor and method for manufacturing the same
JP2978972B2 (ja) * 1992-03-12 1999-11-15 富士通株式会社 半導体装置の製造方法
JPH06196504A (ja) * 1992-12-24 1994-07-15 Rohm Co Ltd 半導体装置およびその製造方法
US5364816A (en) * 1993-01-29 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Fabrication method for III-V heterostructure field-effect transistors
GB2275569B (en) * 1993-02-24 1996-08-07 Toshiba Cambridge Res Center Semiconductor device and method of making same
US5324682A (en) * 1993-04-29 1994-06-28 Texas Instruments Incorporated Method of making an integrated circuit capable of low-noise and high-power microwave operation
JPH07142685A (ja) * 1993-06-17 1995-06-02 Fujitsu Ltd 半導体集積回路装置とその製造方法
JP2500459B2 (ja) * 1993-06-24 1996-05-29 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JPH0742685A (ja) * 1993-08-02 1995-02-10 Sanyo Electric Co Ltd 内部高圧型圧縮機
JPH07202173A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置及びその製造方法
JP3294411B2 (ja) * 1993-12-28 2002-06-24 富士通株式会社 半導体装置の製造方法
JP2581452B2 (ja) * 1994-06-06 1997-02-12 日本電気株式会社 電界効果トランジスタ
JP2685032B2 (ja) * 1995-06-09 1997-12-03 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP2716015B2 (ja) * 1995-07-27 1998-02-18 日本電気株式会社 電界効果トランジスタの製造方法
JP3616447B2 (ja) * 1996-02-27 2005-02-02 富士通株式会社 半導体装置
JP2780704B2 (ja) * 1996-06-14 1998-07-30 日本電気株式会社 半導体装置の製造方法
JPH1056168A (ja) * 1996-08-08 1998-02-24 Mitsubishi Electric Corp 電界効果トランジスタ
JP2001524759A (ja) * 1997-11-26 2001-12-04 ザ ウィタカー コーポレーション ガリウムひ素ベースのエピタキシャル電界効果トランジスタの選択性凹部用ＩｎｘＧａ１−ｘＰエッチング停止層及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350839A (ja) * 1989-07-19 1991-03-05 Fujitsu Ltd 化合物半導体装置及びその製造方法
JPH05251472A (ja) * 1992-01-09 1993-09-28 Mitsubishi Electric Corp 半導体装置
JPH05267276A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd ＩｎＧａＰのエッチング方法及びそのエッチング方法を用いた半導体装置の製造方法
JPH0831844A (ja) * 1994-07-11 1996-02-02 Murata Mfg Co Ltd 半導体装置の製造方法
JPH09246532A (ja) * 1996-03-14 1997-09-19 Fujitsu Ltd 化合物半導体装置の製造方法
JPH1050729A (ja) * 1996-07-29 1998-02-20 Mitsubishi Electric Corp 半導体装置，及びその製造方法
JPH10209434A (ja) * 1997-01-23 1998-08-07 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合型電界効果トランジスタとその製造方法

Also Published As

Publication number Publication date
EP1630860A2 (en) 2006-03-01
EP1131849B1 (en) 2006-03-01
WO2000019512A8 (en) 2000-09-28
AU5923899A (en) 2000-04-17
US6087207A (en) 2000-07-11
EP1131849A4 (en) 2002-10-28
EP1630860A3 (en) 2008-03-05
EP1131849A2 (en) 2001-09-12
WO2000019512A1 (en) 2000-04-06
DE69930135D1 (de) 2006-04-27
JP2002526922A (ja) 2002-08-20
DE69930135T2 (de) 2006-12-07

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