WO2018154754A1 - 半導体装置及びその製造方法 - Google Patents
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Definitions
- the present invention relates to a semiconductor device that can easily shorten a gate length and improve high-frequency characteristics, and a manufacturing method thereof.
- One technique for improving the high-frequency characteristics of a transistor is to shorten the gate length in order to shorten the electron channel transit time.
- the frequency band for operating the transistor exceeds the conversion frequency (f K ) of the transistor, the transistor gain shows a rapid decrease of ⁇ 6 dB / oct.
- the frequency dependence is small stable and in order to obtain a transistor having a sufficiently large gain, by reducing the gate length gate - to improve f K by reducing the capacitance component (C gs) between the source Is effective.
- the exposure light source has been shortened in wavelength, electron beam drawing, full-surface slimming method, and the like (for example, see Patent Document 1).
- the gate length is restricted by the transfer dimension when forming the gate electrode. Therefore, in order to obtain a semiconductor device having a sufficiently short gate length, introduction of an expensive exposure apparatus, development of advanced transfer technology, and precise process management are necessary. In order to realize these, there is a problem that it is necessary to spend a great amount of time and money.
- the present invention has been made in order to solve the above-described problems, and an object of the present invention is to obtain a semiconductor device and a method for manufacturing the same that can easily shorten the gate length to improve high-frequency characteristics.
- a semiconductor device comprises a semiconductor layer, a gate electrode formed on the semiconductor layer and in contact with the semiconductor layer, and a gate electrode having at least an upper layer formed on the lower layer, The upper layer generates stress in the lowermost layer, and both end portions of the lowermost layer are warped from the semiconductor layer.
- the upper layer of the gate electrode generates stress in the lowermost layer, and both end portions of the lowermost layer are warped from the semiconductor layer.
- the gate length can be made smaller than the transfer dimension without introducing an expensive exposure apparatus, developing an advanced transfer technique, and performing precise process management.
- the high-frequency characteristics can be improved by simply shortening the gate length.
- FIG. 1 is a cross-sectional view showing a semiconductor device according to the first embodiment of the present invention.
- a semiconductor layer 2 made of a compound semiconductor such as GaAs is formed on a semiconductor substrate 1.
- a source electrode 3 and a drain electrode 4 are formed on the semiconductor layer 2 and are in ohmic contact with the semiconductor layer 2.
- a recess structure 5 is formed on the surface of the semiconductor layer 2 between the source electrode 3 and the drain electrode 4.
- a T-shaped gate electrode 6 is formed on the semiconductor layer 2 in the recess structure 5.
- the gate electrode 6 has at least a lowermost layer 6a that is in direct contact with the semiconductor layer 2 and has a Schottky junction, and an upper layer 6b formed on the lowermost layer 6a.
- the gate electrode 6 is a metal layer of two or more layers, and here, a Pt / Ti / Pt / Au layer is laminated in order from the bottom.
- the upper layer 6 b generates stress in the lowermost layer 6 a and both end portions of the lowermost layer 6 a are warped from the semiconductor layer 2.
- FIG. 2 to 6 are cross-sectional views for explaining the semiconductor device manufacturing method according to the first embodiment of the present invention.
- the semiconductor layer 2 is formed on the semiconductor substrate 1, and the first resist 7 is applied on the semiconductor layer 2.
- the resist 7 is patterned by electron beam exposure and development.
- a second layer of resist 8 is applied, and the resist 8 is patterned by electron beam exposure and development.
- the semiconductor layer 2 is etched using the resists 7 and 8 as a mask to form a recess structure 5.
- the lowermost layer 6a and the upper layer 6b are sequentially deposited on the entire surface.
- the gate electrode 6 is formed by lift-off which removes the lowermost layer 6a and the upper layer 6b on the resists 7 and 8 together.
- heat treatment is performed to generate stress from the upper layer 6 b to the lowermost layer 6 a to warp both ends of the lowermost layer 6 a from the semiconductor layer 2.
- the heat treatment time and temperature are set such that both end portions of the lowermost layer 6a are warped in accordance with the gate length and the electrode thickness.
- the upper layer 6b of the gate electrode 6 generates stress in the lowermost layer 6a, and both end portions of the lowermost layer 6a are warped from the semiconductor layer 2.
- the gate length can be made shorter than the transfer dimension without introducing an expensive exposure apparatus, developing an advanced transfer technique, and performing precise process management.
- the high-frequency characteristics can be improved by simply shortening the gate length.
- FIG. FIG. 7 is a sectional view showing a semiconductor device according to the second embodiment of the present invention.
- the lowermost layer 6a is a metal such as Pt that undergoes a solid phase reaction with the semiconductor layer 2 of GaAs, for example.
- the central portion of the lowermost layer 6a reacts with the semiconductor layer 2 to form an alloy.
- sufficient adhesive strength can be obtained.
- Other configurations and effects are the same as those of the first embodiment.
- FIG. FIG. 8 is a sectional view showing a semiconductor device according to the third embodiment of the present invention.
- the protective film 9 covers both ends of the warped up lowermost layer 6a.
- the coverage of the warped portion of the gate electrode 6 is difficult in a p-CVD film such as SiO 2 or Si 3 N 4 used as a protective film in a general semiconductor device manufacturing process.
- the protective film 9 is an insulating film having a sufficiently excellent coverage, and is formed by, for example, an atomic layer deposition (ALD) method, and an atomic layer deposition film in which atomic layers are alternately arranged. It is.
- ALD atomic layer deposition
- the moisture resistance of the semiconductor device can be improved by covering both ends of the lowermost layer 6a where the protective film 9 is warped. Further, since the overlap gate structure is realized, the electric field peak is dispersed at the end of the gate electrode 6 in contact with the semiconductor layer 2 and the electrode end of the protective film 9. As a result, electric field concentration is reduced, speed overshoot is reduced, and drain conductance is improved. Other configurations and effects are the same as those of the second embodiment.
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。半導体基板1の上にGaAsなどの化合物半導体からなる半導体層2が形成されている。ソース電極3及びドレイン電極4が半導体層2の上に形成され、半導体層2にオーミック接合している。ソース電極3とドレイン電極4との間において半導体層2の表面にリセス構造5が形成されている。そのリセス構造5内において半導体層2の上にT字型のゲート電極6が形成されている。
図7は、本発明の実施の形態2に係る半導体装置を示す断面図である。最下層6aは、例えばGaAsの半導体層2に対して固相反応するPtなどの金属である。この場合、ゲート電極6の形成後の入熱により最下層6aの中央部は半導体層2と固相反応して合金化する。これにより、最下層6aの両端部が反り上がって半導体層2との接触面積が小さくなっても、十分な接着強度が得られる。この結果、後工程でのリフトオフ又はダイシングの際の水流によるゲート電極6の脱落を防ぐことができ、歩留まりの向上が見込める。その他の構成及び効果は実施の形態1と同様である。
図8は、本発明の実施の形態3に係る半導体装置を示す断面図である。保護膜9が、反り上がった最下層6aの両端部を被覆している。ただし、一般的な半導体装置製造プロセスで保護膜として使用されるSiO2又はSi3N4等のp-CVD膜ではゲート電極6の反り部分のカバレッジが難しい。これに対して、保護膜9は、十分にカバレッジ性に優れた絶縁膜であり、例えば原子層堆積 (ALD: Atomic layer deposition)法により形成されて、原子層が交互配列された原子層堆積膜である。
Claims (8)
- 半導体層と、
前記半導体層の上に形成され、前記半導体層に接する最下層と、前記最下層の上に形成された上層とを少なくとも有するゲート電極とを備え、
前記上層が前記最下層に応力を発生させて前記最下層の両端部が前記半導体層から反り上がっていることを特徴とする半導体装置。 - 前記最下層はPt層であり、前記上層はTi層であることを特徴とする請求項1に記載の半導体装置。
- 前記最下層の中央部は前記半導体層と固相反応していることを特徴とする請求項1又は2に記載の半導体装置。
- 反り上がった前記最下層の前記両端部を被覆する保護膜を更に備えることを特徴とする請求項1~3の何れか1項に記載の半導体装置。
- 前記保護膜は、原子層が交互配列された原子層堆積膜であることを特徴とする請求項4に記載の半導体装置。
- 半導体層の上に、前記半導体層に接する最下層と、前記最下層の上に形成された上層とを少なくとも有するゲート電極を形成する工程と、
熱処理を行うことで前記上層から前記最下層に応力を発生させて前記最下層の両端部を前記半導体層から反り上がらせる工程とを備えることを特徴とする半導体装置の製造方法。 - 前記熱処理により前記最下層の中央部を前記半導体層と固相反応させることを特徴とする請求項6に記載の半導体装置の製造方法。
- 反り上がった前記最下層の前記両端部を被覆する保護膜を原子層堆積法により形成する工程を更に備えることを特徴とする請求項6又は7に記載の半導体装置の製造方法。
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US16/472,402 US10790397B2 (en) | 2017-02-27 | 2017-02-27 | Semiconductor device and method for manufacturing the same |
JP2017530239A JP6222408B1 (ja) | 2017-02-27 | 2017-02-27 | 半導体装置及びその製造方法 |
KR1020197024376A KR102150850B1 (ko) | 2017-02-27 | 2017-02-27 | 반도체 장치 및 그 제조 방법 |
DE112017007134.8T DE112017007134T5 (de) | 2017-02-27 | 2017-02-27 | Halbleitervorrichtung und Verfahren zu deren Herstellung |
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JPH04245444A (ja) * | 1991-01-30 | 1992-09-02 | Fujitsu Ltd | 電界効果トランジスタおよびその製造方法 |
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JP2003007726A (ja) * | 2001-06-18 | 2003-01-10 | New Japan Radio Co Ltd | ヘテロ接合電界効果トランジスタ |
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JPS60254666A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Fetの製造方法 |
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JPH10173166A (ja) * | 1996-12-05 | 1998-06-26 | Murata Mfg Co Ltd | 電界効果トランジスタ及びその製造方法 |
US6087207A (en) * | 1998-09-29 | 2000-07-11 | Raytheon Company | Method of making pseudomorphic high electron mobility transistors |
JP2001265011A (ja) | 2000-03-17 | 2001-09-28 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2003133333A (ja) | 2001-10-25 | 2003-05-09 | Murata Mfg Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2007027232A (ja) * | 2005-07-13 | 2007-02-01 | Seiko Epson Corp | 半導体装置及びその製造方法 |
DE102006012369A1 (de) * | 2006-03-17 | 2007-09-20 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit einer metallischen Steuerelektrode und Halbleiterbauelement |
JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
JP5417700B2 (ja) | 2007-10-22 | 2014-02-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2013229486A (ja) | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | ヘテロ接合電界効果トランジスタ及びその製造方法 |
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JPS57106080A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of gaas field effect transistor |
JPH04245444A (ja) * | 1991-01-30 | 1992-09-02 | Fujitsu Ltd | 電界効果トランジスタおよびその製造方法 |
JPH10177967A (ja) * | 1996-12-16 | 1998-06-30 | Murata Mfg Co Ltd | 電界効果トランジスタ |
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