GB2275569B - Semiconductor device and method of making same - Google Patents

Semiconductor device and method of making same

Info

Publication number
GB2275569B
GB2275569B GB9303664A GB9303664A GB2275569B GB 2275569 B GB2275569 B GB 2275569B GB 9303664 A GB9303664 A GB 9303664A GB 9303664 A GB9303664 A GB 9303664A GB 2275569 B GB2275569 B GB 2275569B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
making same
making
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9303664A
Other versions
GB9303664D0 (en
GB2275569A (en
Inventor
Atsushi Kurobe
Jeremy Henley Burroughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9303664A priority Critical patent/GB2275569B/en
Publication of GB9303664D0 publication Critical patent/GB9303664D0/en
Publication of GB2275569A publication Critical patent/GB2275569A/en
Application granted granted Critical
Publication of GB2275569B publication Critical patent/GB2275569B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9303664A 1993-02-24 1993-02-24 Semiconductor device and method of making same Expired - Fee Related GB2275569B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9303664A GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9303664A GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Publications (3)

Publication Number Publication Date
GB9303664D0 GB9303664D0 (en) 1993-04-14
GB2275569A GB2275569A (en) 1994-08-31
GB2275569B true GB2275569B (en) 1996-08-07

Family

ID=10730925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9303664A Expired - Fee Related GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Country Status (1)

Country Link
GB (1) GB2275569B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5606184A (en) * 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
US6087207A (en) * 1998-09-29 2000-07-11 Raytheon Company Method of making pseudomorphic high electron mobility transistors
US7781801B2 (en) 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
FR2914500B1 (en) * 2007-03-30 2009-11-20 Picogiga Internat IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE

Also Published As

Publication number Publication date
GB9303664D0 (en) 1993-04-14
GB2275569A (en) 1994-08-31

Similar Documents

Publication Publication Date Title
HK1004843A1 (en) Semiconductor device and manufacture method of same
GB2269050B (en) Semiconductor device and method of fabricating same
GB2264388B (en) Semiconductor device and method of fabricating same
EP0690497A3 (en) Semiconductor device and method of forming
KR0171436B1 (en) Forming method of semiconductor device
GB2274741B (en) Semiconductor device and method for its manufacture
GB9515147D0 (en) Semiconductor device and method of manufacturing the same
EP0700087A3 (en) Semiconductor device and method of manufacturing the same
HK1005420A1 (en) Semiconductor device and manufacturing method thereof
GB2286082B (en) Semiconductor device and method of fabrication therefor
GB2290165B (en) Semiconductor device and method of fabrication thereof
GB2285173B (en) Semiconductor device and manufacturing method thereof
GB2268828B (en) Semiconductor device and method of fabricating same
SG68542A1 (en) Semiconductor device and manufacturing method thereof
EP0606648A3 (en) Semiconductor manufacturing apparatus and method of manufacturing semiconductor device.
GB2284301B (en) Pressure-connection type semiconductor device and method of fabricating the same
GB2279806B (en) Semiconductor device and method of making same
GB2306780B (en) Semiconductor device and method of manufacture
GB9612263D0 (en) Semiconductor device and method of manufacture
GB2307790B (en) Semiconductor device and method of manufacture
GB2275569B (en) Semiconductor device and method of making same
SG85053A1 (en) Semiconductor device and method of formation
GB2270590B (en) Semiconductor device and method for its manufacture
GB2293485B (en) Semiconductor device and method of making the semiconductor device
GB2251723B (en) Semiconductor device and method of making it

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120224