GB9612263D0 - Semiconductor device and method of manufacture - Google Patents

Semiconductor device and method of manufacture

Info

Publication number
GB9612263D0
GB9612263D0 GBGB9612263.5A GB9612263A GB9612263D0 GB 9612263 D0 GB9612263 D0 GB 9612263D0 GB 9612263 A GB9612263 A GB 9612263A GB 9612263 D0 GB9612263 D0 GB 9612263D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9612263.5A
Other versions
GB2302758A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9612263D0 publication Critical patent/GB9612263D0/en
Publication of GB2302758A publication Critical patent/GB2302758A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
GB9612263A 1995-06-28 1996-06-12 Semiconductor device and method of manufacture Withdrawn GB2302758A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017885A KR100190363B1 (en) 1995-06-28 1995-06-28 Forming element isolation region in semiconductor device

Publications (2)

Publication Number Publication Date
GB9612263D0 true GB9612263D0 (en) 1996-08-14
GB2302758A GB2302758A (en) 1997-01-29

Family

ID=19418567

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9612263A Withdrawn GB2302758A (en) 1995-06-28 1996-06-12 Semiconductor device and method of manufacture

Country Status (6)

Country Link
JP (1) JPH0917780A (en)
KR (1) KR100190363B1 (en)
CN (1) CN1075666C (en)
DE (1) DE19625404B4 (en)
GB (1) GB2302758A (en)
TW (1) TW297944B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19731203A1 (en) * 1997-07-21 1999-02-11 Siemens Ag CMOS circuit and method for its manufacture
KR100439107B1 (en) * 1997-12-29 2004-07-16 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device to prevent leakage current
CN104299984A (en) * 2013-07-19 2015-01-21 北大方正集团有限公司 Semiconductor device and manufacture method thereof
KR20160000007U (en) 2014-06-24 2016-01-04 안숙희 Bottom block of hydraulic vice
CN105390409B (en) * 2014-09-04 2018-06-26 北大方正集团有限公司 The test method and device of beak length
KR20190131343A (en) 2018-05-16 2019-11-26 현대중공업 주식회사 Ship
CN113838797B (en) * 2021-11-26 2022-03-04 广州粤芯半导体技术有限公司 Preparation method of local oxide layer and preparation method of semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075875A3 (en) * 1981-09-28 1986-07-02 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS61174737A (en) * 1985-01-30 1986-08-06 Oki Electric Ind Co Ltd Manufacture of semiconductor element
US5256895A (en) * 1987-02-24 1993-10-26 Sgs-Thomson Microelectronics, Inc. Pad oxide protect sealed interface isolation
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
GB2238658B (en) * 1989-11-23 1993-02-17 Stc Plc Improvements in integrated circuits
US5298451A (en) * 1991-04-30 1994-03-29 Texas Instruments Incorporated Recessed and sidewall-sealed poly-buffered LOCOS isolation methods
KR960005553B1 (en) * 1993-03-31 1996-04-26 현대전자산업주식회사 Manufacturing method of field oxide
US5382533A (en) * 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection
JPH0730113A (en) * 1993-07-09 1995-01-31 Sony Corp Manufacture of mos transistor
KR970003893B1 (en) * 1993-10-25 1997-03-22 삼성전자 주식회사 Method of isolation of the elements on the semiconductor device

Also Published As

Publication number Publication date
KR970003811A (en) 1997-01-29
TW297944B (en) 1997-02-11
JPH0917780A (en) 1997-01-17
CN1075666C (en) 2001-11-28
DE19625404B4 (en) 2005-12-29
DE19625404A1 (en) 1997-01-02
KR100190363B1 (en) 1999-06-01
CN1145532A (en) 1997-03-19
GB2302758A (en) 1997-01-29

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)