JP4852278B2 - リソグラフィ装置及びデバイス製造方法 - Google Patents

リソグラフィ装置及びデバイス製造方法 Download PDF

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Publication number
JP4852278B2
JP4852278B2 JP2005233909A JP2005233909A JP4852278B2 JP 4852278 B2 JP4852278 B2 JP 4852278B2 JP 2005233909 A JP2005233909 A JP 2005233909A JP 2005233909 A JP2005233909 A JP 2005233909A JP 4852278 B2 JP4852278 B2 JP 4852278B2
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gas
substrate
temperature
lithographic apparatus
liquid
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Expired - Fee Related
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JP2005233909A
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Japanese (ja)
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JP2006054468A (ja
Inventor
ペトルス マリア カディー テオドルス
ヘンリクス ヴィルヘルム ヤコブス ヨハネス
テン カテ ニコラース
ロエロフ ロープシュトラ エリック
ロデヴィク ヘンドリクス ヨハネス ファン メール アシュヴィン
ヨハネス ソフィア マリア メルテンス ジェローン
ゲラルデュス マリア デ モル クリスティアヌス
ヨハネス エリザベス ヒューバータス ムイトイェンス マルセル
ヨハネス ファン デル ネット アントニウス
ジェローン オッテンス ヨーショト
アンナ クアエダックケルス ヨハネス
エリザベス ロイマン − フィスケン マリア
コエルト シュタフェンガ マルコ
アロイシウス ヤコブス ティンネマンス パトリシウス
コーネリス マリア フェルハーヘン マルティヌス
ヨハネス レオナルデュス ヘンドリクス フェルシュパイ ヤコブス
エデゥアルト デ ヨング フレデリック
ゴールマン コエン
メンチトチコフ ボリス
ボーム ヘルマン
ニティアノフ ストヤン
モエルマン リチャード
フランス ピーレ スメーツ マーティン
レオナルド ペーター ショーンデルマーク バート
ヨハネス ヨーゼフ ヤンセン フランシスクス
リーペン ミヘル
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005233909A 2004-08-13 2005-08-12 リソグラフィ装置及びデバイス製造方法 Expired - Fee Related JP4852278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/917,535 2004-08-13
US10/917,535 US7304715B2 (en) 2004-08-13 2004-08-13 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009024156A Division JP5275067B2 (ja) 2004-08-13 2009-02-04 リソグラフィ装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2006054468A JP2006054468A (ja) 2006-02-23
JP4852278B2 true JP4852278B2 (ja) 2012-01-11

Family

ID=34981965

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2005233909A Expired - Fee Related JP4852278B2 (ja) 2004-08-13 2005-08-12 リソグラフィ装置及びデバイス製造方法
JP2009024156A Expired - Lifetime JP5275067B2 (ja) 2004-08-13 2009-02-04 リソグラフィ装置及びデバイス製造方法
JP2011285516A Expired - Fee Related JP5699072B2 (ja) 2004-08-13 2011-12-27 リソグラフィ装置及びデバイス製造方法
JP2013228111A Expired - Fee Related JP5699197B2 (ja) 2004-08-13 2013-11-01 リソグラフィ装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2009024156A Expired - Lifetime JP5275067B2 (ja) 2004-08-13 2009-02-04 リソグラフィ装置及びデバイス製造方法
JP2011285516A Expired - Fee Related JP5699072B2 (ja) 2004-08-13 2011-12-27 リソグラフィ装置及びデバイス製造方法
JP2013228111A Expired - Fee Related JP5699197B2 (ja) 2004-08-13 2013-11-01 リソグラフィ装置

Country Status (7)

Country Link
US (7) US7304715B2 (enExample)
EP (1) EP1628161B1 (enExample)
JP (4) JP4852278B2 (enExample)
KR (1) KR100760317B1 (enExample)
CN (2) CN1746775B (enExample)
SG (2) SG120255A1 (enExample)
TW (1) TWI322929B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170008863A (ko) * 2014-06-19 2017-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 대상물 위치설정 시스템 및 디바이스 제조 방법

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* Cited by examiner, † Cited by third party
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US9188880B2 (en) 2015-11-17
SG131107A1 (en) 2007-04-26
CN1746775B (zh) 2010-07-07
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US10254663B2 (en) 2019-04-09
JP5275067B2 (ja) 2013-08-28
JP2006054468A (ja) 2006-02-23
US20100321650A1 (en) 2010-12-23
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EP1628161B1 (en) 2012-11-28
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US20190235397A1 (en) 2019-08-01
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US9268242B2 (en) 2016-02-23
US7804575B2 (en) 2010-09-28
US20120113402A1 (en) 2012-05-10
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CN101923290B (zh) 2012-07-18
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US20210063898A1 (en) 2021-03-04

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