JP4805141B2 - 電気めっき装置 - Google Patents

電気めっき装置 Download PDF

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Publication number
JP4805141B2
JP4805141B2 JP2006507663A JP2006507663A JP4805141B2 JP 4805141 B2 JP4805141 B2 JP 4805141B2 JP 2006507663 A JP2006507663 A JP 2006507663A JP 2006507663 A JP2006507663 A JP 2006507663A JP 4805141 B2 JP4805141 B2 JP 4805141B2
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JP
Japan
Prior art keywords
plating
plated
substrate
plating solution
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006507663A
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English (en)
Japanese (ja)
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JP2006519932A (ja
JP2006519932A5 (https=
Inventor
文夫 栗山
隆 竹村
信利 齋藤
誠章 木村
冷 黄海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2006507663A priority Critical patent/JP4805141B2/ja
Publication of JP2006519932A publication Critical patent/JP2006519932A/ja
Publication of JP2006519932A5 publication Critical patent/JP2006519932A5/ja
Application granted granted Critical
Publication of JP4805141B2 publication Critical patent/JP4805141B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008—Current shielding devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006507663A 2003-03-11 2004-03-09 電気めっき装置 Expired - Fee Related JP4805141B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006507663A JP4805141B2 (ja) 2003-03-11 2004-03-09 電気めっき装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2003065476 2003-03-11
JP2003065476 2003-03-11
JP2003208315 2003-08-21
JP2003208315 2003-08-21
PCT/JP2004/003040 WO2004081261A2 (en) 2003-03-11 2004-03-09 Plating apparatus
JP2006507663A JP4805141B2 (ja) 2003-03-11 2004-03-09 電気めっき装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010008438A Division JP5175871B2 (ja) 2003-03-11 2010-01-18 めっき装置

Publications (3)

Publication Number Publication Date
JP2006519932A JP2006519932A (ja) 2006-08-31
JP2006519932A5 JP2006519932A5 (https=) 2007-04-19
JP4805141B2 true JP4805141B2 (ja) 2011-11-02

Family

ID=32992950

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006507663A Expired - Fee Related JP4805141B2 (ja) 2003-03-11 2004-03-09 電気めっき装置
JP2010008438A Expired - Fee Related JP5175871B2 (ja) 2003-03-11 2010-01-18 めっき装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010008438A Expired - Fee Related JP5175871B2 (ja) 2003-03-11 2010-01-18 めっき装置

Country Status (7)

Country Link
US (2) US7875158B2 (https=)
EP (1) EP1602127A2 (https=)
JP (2) JP4805141B2 (https=)
KR (1) KR101058917B1 (https=)
CN (1) CN101812711B (https=)
TW (2) TWI341875B (https=)
WO (1) WO2004081261A2 (https=)

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EP1668174A2 (en) 2003-10-02 2006-06-14 Ebara Corporation Plating method and apparatus
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NL1032540C2 (nl) * 2006-09-19 2008-03-20 Meco Equip Eng Inrichting voor het elektrolytisch neerslaan van materiaal op een plaatvormig substraat.
JP4684979B2 (ja) * 2006-10-19 2011-05-18 本田技研工業株式会社 メッキ装置
JP2008121062A (ja) * 2006-11-10 2008-05-29 Ebara Corp めっき装置及びめっき方法
DE102007026635B4 (de) * 2007-06-06 2010-07-29 Atotech Deutschland Gmbh Vorrichtung zum nasschemischen Behandeln von Ware, Verwendung eines Strömungsorgans, Verfahren zum Einbauen eines Strömungsorgans in die Vorrichtung sowie Verfahren zur Herstellung einer nasschemisch behandelten Ware
DE102007026633B4 (de) * 2007-06-06 2009-04-02 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware
JP4942580B2 (ja) * 2007-08-20 2012-05-30 株式会社荏原製作所 アノードホルダ用通電ベルトおよびアノードホルダ
US8177944B2 (en) 2007-12-04 2012-05-15 Ebara Corporation Plating apparatus and plating method
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
JP4547016B2 (ja) 2008-04-04 2010-09-22 東京エレクトロン株式会社 半導体製造装置、半導体製造方法
JP5155755B2 (ja) * 2008-07-10 2013-03-06 株式会社荏原製作所 磁性体膜めっき装置及びめっき処理設備
EP2435373B1 (de) * 2009-05-29 2015-03-18 Holger Blum Verfahren und vorrichtung zur behandlung von ballastwasser mit acrolein
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CN110970331B (zh) * 2019-10-14 2025-03-04 Pyxiscf私人有限公司 湿法处理设备及其操作方法
CN112442725B (zh) * 2020-11-27 2024-05-24 京东方科技集团股份有限公司 电化学沉积设备组和电化学沉积方法
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JP7577547B2 (ja) * 2021-01-20 2024-11-05 株式会社荏原製作所 めっき装置における短絡検知方法、めっき装置の制御方法、およびめっき装置
TWI784691B (zh) * 2021-08-27 2022-11-21 台灣先進系統股份有限公司 水平式電鍍系統
CN113798247B (zh) * 2021-09-28 2023-05-12 京东方科技集团股份有限公司 镀后清洗风干机构、系统、方法及电化学沉积设备
TWI813129B (zh) * 2022-01-06 2023-08-21 日月光半導體製造股份有限公司 化學鍍槽、化學鍍系統及化學鍍方法
JP2023158895A (ja) * 2022-04-19 2023-10-31 株式会社東設 無電解めっき装置
CN115595641A (zh) * 2022-09-21 2023-01-13 通威太阳能(成都)有限公司（Cn） 太阳电池及栅线的电镀工艺
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TWI886481B (zh) * 2023-05-04 2025-06-11 日商荏原製作所股份有限公司 鍍覆裝置及鍍覆方法
CN116497302B (zh) * 2023-06-21 2023-11-24 山东华辉通信科技有限公司 一种通讯铁塔加工防锈用镀锌设备
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Also Published As

Publication number Publication date
WO2004081261B1 (en) 2005-07-14
TW200422429A (en) 2004-11-01
JP5175871B2 (ja) 2013-04-03
CN101812711A (zh) 2010-08-25
EP1602127A2 (en) 2005-12-07
WO2004081261A3 (en) 2005-05-26
US8252167B2 (en) 2012-08-28
TWI498451B (zh) 2015-09-01
CN101812711B (zh) 2011-11-16
JP2010106369A (ja) 2010-05-13
US7875158B2 (en) 2011-01-25
JP2006519932A (ja) 2006-08-31
US20060113185A1 (en) 2006-06-01
US20110073482A1 (en) 2011-03-31
KR20050114226A (ko) 2005-12-05
TW201131012A (en) 2011-09-16
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TWI341875B (en) 2011-05-11
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