TWI726080B - 基板之製造方法及基板 - Google Patents

基板之製造方法及基板 Download PDF

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TWI726080B
TWI726080B TW106110488A TW106110488A TWI726080B TW I726080 B TWI726080 B TW I726080B TW 106110488 A TW106110488 A TW 106110488A TW 106110488 A TW106110488 A TW 106110488A TW I726080 B TWI726080 B TW I726080B
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layer
temperature
plating
substrate
copper wiring
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TW106110488A
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TW201802974A (zh
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倉科敬一
石大輝
小俣慎司
社本光弘
久保田誠
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日商荏原製作所股份有限公司
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract

本發明可抑制平坦化熱處理錫合金凸塊層時，錫合金接觸於銅配線層。本發明一種形態提供一種在抗蝕層開口部具有凸塊之基板的製造方法，具有以下工序：在基板上以第一溫度鍍覆銅配線層；在前述銅配線層上以與第一溫度同等之第二溫度鍍覆障壁層；及在前述障壁層上鍍覆錫合金凸塊層。

Description

基板之製造方法及基板
本發明係關於一種基板之製造方法及基板。
過去，係進行在設於半導體晶圓等基板表面之微細配線用溝、孔、或抗蝕層開口部形成配線，或在基板表面形成與封裝體之電極等電性連接的凸塊(突起狀電極)。形成該配線及凸塊之方法，例如習知有電解鍍覆法、蒸鍍法、印刷法、球凸塊法等。近年來，隨著半導體晶片之I/O數量增加、及窄間距化，多採用可微細化且性能比較穩定之電解鍍覆法。
以電解鍍覆法形成配線或凸塊時，係在設於基板上之配線用溝、孔、或抗蝕層開口部之障壁金屬表面形成電阻低之種層(饋電層)(例如參照專利文獻1)。
【先前技術文獻】
【專利文獻】
[專利文獻1]日本特開2014-60379號公報
進行使用此種電解鍍覆法製造抗蝕層開口部具有凸塊之基板。第六A圖-第六F圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
如第六A圖所示，首先準備由二氧化矽(SiO2)或矽(Si)構成之基板W。在基板W上形成銅等之種層201，在種層201上形成具有指定圖案之抗蝕層202。繼續如第六B圖所示，在抗蝕層202之開口部藉由電解鍍覆形成銅配線層203。形成該銅配線層203時之鍍覆液的溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性等之觀點而言設定為約25℃。
如第六C圖所示，在銅配線層203上藉由電解鍍覆形成包含鎳(Ni)之障壁層204。形成該障壁層204時之鍍覆液溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性等之觀點而言設定為約40℃。如此，形成於銅配線層203上部之障壁層204一般而言係以比形成銅配線層203時高的溫度鍍覆。
抗蝕層202之溫度會受到形成銅配線層203時之鍍覆液溫度及形成障壁層204時之鍍覆液溫度的影響。亦即，形成銅配線層203時抗蝕層202之溫度接近此時鍍覆液之溫度的約25℃，另外，形成障壁層204時之抗蝕層202的溫度接近此時鍍覆液溫度的約40℃。因此，由於形成障壁層204時之抗蝕層202比形成銅配線層203時高溫，因此會熱膨脹。因而，如第六C圖所示，藉由抗蝕層202之熱膨脹，形成障壁層204時之抗蝕層202的開口部寬度縮小，結果障壁層204之寬度比銅配線層203的寬度小。另外，本說明書中所謂「寬度」，於抗蝕層202之開口部的形狀概略為圓形時，係指各層之外徑，抗蝕層202之開口部的形狀係多角形時，係指多角形各層之頂點間的距離。
繼續如第六D圖所示，在障壁層204上藉由電解鍍覆形成包含錫銀之錫合金凸塊層205。形成該錫合金凸塊層205時之鍍覆液溫度，從 鍍覆速度及包含於鍍覆液之添加劑的效率性等之觀點而言設定為約30℃。因此，由於形成錫合金凸塊層205時之抗蝕層202比形成障壁層204時低溫，因此會熱收縮。因而如第六D圖所示，藉由抗蝕層202之熱收縮，形成錫合金凸塊層205時之抗蝕層202的開口部寬度擴大，結果錫合金凸塊層205之寬度比障壁層204的寬度大。
然後，藉由抗蝕層剝離裝置除去抗蝕層202，並藉由蝕刻裝置將種層201蝕刻成適切形狀。如第六E圖所示，銅配線層203、障壁層204、錫合金凸塊層205分別具有不同寬度。具體而言，障壁層204具有比銅配線層203小之寬度。
如此，若障壁層204具有比銅配線層203小之寬度，而平坦化熱處理錫合金凸塊層205時，如第六F圖所示，平坦化熱處理之錫合金凸塊層205會從障壁層204側面掉落而接觸於銅配線層203。當錫合金凸塊層205接觸於銅配線層203時，銅向錫合金擴散有可能會引起凸塊之接合強度惡化，或是因發生電遷移而產生斷線。此種問題不限於以電解鍍覆形成3層鍍覆膜之構造的情況，以無電解鍍覆形成3層構造的情況也會發生。
本發明係鑑於上述問題而形成者。其目的為抑制平坦化熱處理錫合金凸塊層時錫合金接觸於銅配線層。
本發明一種形態提供一種基板之製造方法，該基板在抗蝕層開口部具有凸塊。該製造方法具有以下工序：在基板上以形成第一溫度之鍍覆液鍍覆銅配線層；在前述銅配線層上以形成與第一溫度同等之第二溫度的鍍覆液鍍覆障壁層；及在前述障壁層上鍍覆錫合金凸塊層。
採用該一種形態時，形成於銅配線層上之障壁層係以與銅配線層鍍覆時之溫度同等的溫度鍍覆。因此，鍍覆障壁層時之抗蝕層開口部的寬度形成接近鍍覆銅配線層時之抗蝕層開口部寬度的大小。因而，障壁層之寬度形成接近銅配線層的寬度大小，可抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述第二溫度與前述第一溫度之差小於5℃。
採用該一種形態時，第二溫度與第一溫度之差小於5℃，障壁層之寬度為接近銅配線層之寬度的大小，可抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述第二溫度與前述第一溫度之差為2.5℃以下。
採用該一種形態時，第二溫度與第一溫度之差小於2.5℃，障壁層之寬度形成進一步接近銅配線層之寬度的大小，可進一步抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述第二溫度與前述第一溫度之差為1℃以下。
採用該一種形態時，第二溫度與第一溫度之差小於1℃，障壁層之寬度形成與銅配線層之寬度同樣大小，可更進一步抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述障壁層包含由鎳及鈷(Co)構成之群中一個以上的金屬。
採用該一種形態時，由於障壁層係由構成銅配線層之銅難以擴散的材料構成，因此可防止構成銅配線層之銅擴散至構成錫合金凸塊層的錫合金。另外，鎳、鈷通常可藉由電解鍍覆而形成。
本發明一種形態提供一種基板之製造方法，該基板在抗蝕層開口部具有凸塊。該基板之製造方法具有以下工序：在基板上以形成第一溫度之鍍覆液鍍覆銅配線層；在前述銅配線層上以形成小於第一溫度之第二溫度的鍍覆液鍍覆強化障壁層；及在前述強化障壁層上鍍覆錫合金層。
採用該一種形態時，形成於銅配線層上之強化障壁層係以比銅配線層鍍覆時之溫度低的溫度鍍覆。因此，鍍覆強化障壁層時之抗蝕層開口部的寬度比鍍覆銅配線層時之抗蝕層開口部的寬度大。因而，強化障壁層之寬度比銅配線層的寬度大，可進一步抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述強化障壁層之寬度比前述銅配線層的寬度大。
採用該一種形態時，由於強化障壁層之寬度比銅配線層的寬度大，因此可進一步抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述強化障壁層覆蓋前述銅配線層之側面的至少一部分。
採用該一種形態時，由於強化障壁層覆蓋銅配線層之側面的至少一部分，因此可進一步抑制平坦化熱處理錫合金凸塊層時錫合金與銅配線層接觸。
本發明一種形態中，前述第二溫度比前述第一溫度低5℃以上，且為15℃以上。
採用該一種形態時，由於第二溫度比第一溫度低5℃以上，因此可使強化障壁層之寬度遠大於銅配線層的寬度。因此，可更確實抑制錫合金與銅配線層接觸。用於鍍覆強化障壁層之鍍覆液視其種類包含硼酸。該硼酸在鍍覆液之溫度低於15℃時可能會析出。因此，採用該一種形態時，由於第二溫度係15℃以上，因此可抑制從用於鍍覆強化障壁層之鍍覆液析出硼酸。
本發明一種形態中，前述強化障壁層包含由鎳及鈷構成之群中一個以上的金屬。
採用該一種形態時，由於強化障壁層係由構成銅配線層之銅難以擴散的材料構成，因此可防止構成銅配線層之銅擴散至構成錫合金凸塊層的錫合金。另外，鎳、鈷通常可藉由電解鍍覆而形成。
本發明一種形態中，鍍覆前述錫合金凸塊層之工序，包含以形成前述第二溫度以上之第三溫度的鍍覆液鍍覆前述錫合金凸塊層之工序。
採用該一種形態時，錫合金凸塊層係以第二溫度以上之第三溫度鍍覆。因此，鍍覆錫合金凸塊層時之抗蝕層開口部的寬度，為鍍覆強化障壁層時之抗蝕層開口部的寬度以下。因而，錫合金凸塊層之寬度為強化障壁層之寬度以下的大小，可抑制平坦化熱處理錫合金凸塊層時從強化障壁層擠出錫合金，並抑制錫合金掉落到銅配線層而接觸。
本發明一種形態提供一種基板，係在抗蝕層開口部具有凸 塊。該基板具有：銅配線層，其係設於基板上；強化障壁層，其係設於前述銅配線層上；及前述強化障壁層上之錫合金凸塊層。前述強化障壁層之寬度比前述銅配線層的寬度大。
採用該一種形態時，由於強化障壁層之寬度比銅配線層的寬度大，因此可抑制平坦化熱處理錫合金凸塊層時錫合金掉落到銅配線層而接觸。
本發明一種形態中，前述強化障壁層覆蓋前述銅配線層之側面的至少一部分。
採用該一種形態時，由於強化障壁層覆蓋銅配線層之側面的至少一部分，因此可進一步抑制平坦化熱處理錫合金凸塊層時錫合金與銅配線層接觸。
本發明一種形態中，前述強化障壁層包含由鎳及鈷構成之群中一個以上的金屬。
採用該一種形態時，由於強化障壁層係由構成銅配線層之銅難以擴散的材料構成，因此可防止構成銅配線層之銅擴散至構成錫合金凸塊層的錫合金。另外，鎳、鈷通常可藉由電解鍍覆而形成。
10:鍍覆槽
18:槳葉
19:槳葉驅動裝置
20:陽極固持器
21:陽極
25:陽極遮罩
25a:第一開口
25b:陽極遮罩安裝部
30:調整板
30a:第二開口
40:基板固持器
50、50a、50b、50c:鍍覆單元
52:鍍覆處理槽
54:溢流槽
55:分隔壁
56:鍍覆液供給口
57:鍍覆液排出口
58:鍍覆液循環裝置
58a:溫度調節機構
58b:過濾器
59:溫度計
90:電源
100:匣盒
102:匣盒台
104:對準器
106:自旋沖洗乾燥器
120:基板裝卸部
122:基板搬送裝置
124:暫存盒
126:預濕槽
128:預浸槽
130a:第一洗淨槽
130b:第二洗淨槽
132:噴吹槽
140:基板固持器搬送裝置
142:第一輸送機
144:第二輸送機
150:軌道
152:裝載板
170A:裝載/卸載部
170B:處理部
201:種層
202:抗蝕層
203:銅配線層
204:障壁層
205:錫合金凸塊層
301:種層
302:抗蝕層
303:銅配線層
304:障壁層
305:錫合金凸塊層
306:強化障壁層
Q:鍍覆液
W:基板
W1:被鍍覆面
第一圖係用於對本發明第一種實施形態之基板進行鍍覆的鍍覆裝置之整體配置圖。
第二圖係第一圖所示之鍍覆槽的概略側剖面圖。
第三A圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三B圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三C圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三D圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三E圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三F圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第三G圖顯示用於說明第一種實施形態之基板的製造方法之基板部分剖面圖。
第四A圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第四B圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第四C圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第四D圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第四E圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第四F圖顯示用於說明第二種實施形態之基板的製造方法之基板部分剖面圖。
第五圖係第三種實施形態之用於對基板進行鍍覆的鍍覆裝置之整體配置圖。
第六A圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
第六B圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
第六C圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
第六D圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
第六E圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
第六F圖係顯示製造抗蝕層開口部具有凸塊之基板的過去程序之概略圖。
<第一種實施形態>
以下，參照圖式說明本發明之第一種實施形態。以下說明之圖式中，在同一或相當之元件上註記同一符號並省略重複的說明。
第一圖係用於對本發明第一種實施形態之基板進行鍍覆的鍍覆裝置之整體配置圖。如第一圖所示，該鍍覆裝置大致上劃分為在基板 固持器40上裝載基板或從基板固持器40卸載基板之裝載/卸載部170A；及處理基板之處理部170B。
裝載/卸載部170A中具有：2台匣盒台102；將基板之定向平面(Orientation Flat)或凹槽等位置對準指定方向的對準器104；及使鍍覆處理後之基板高速旋轉而乾燥的自旋沖洗乾燥器106。匣盒台102搭載收納半導體晶圓等基板之匣盒100。在自旋沖洗乾燥器106附近設有裝載基板固持器40並進行基板裝卸之基板裝卸部120。在此等單元100、104、106、120之中央配置有在此等單元間搬送基板之由搬送機器人構成的基板搬送裝置122。
基板裝卸部120具備沿著軌道150在橫方向滑動自如之平板狀的裝載板152。2個基板固持器40以水平狀態橫向配置於該裝載板152上，在一方基板固持器40與基板搬送裝置122之間進行基板交接後，裝載板152在橫方向滑動，並在另一方基板固持器40與基板搬送裝置122之間進行基板交接。
鍍覆裝置之處理部170B具有：暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b、及鍍覆槽10。暫存盒124係進行基板固持器40之保管及暫時放置。預濕槽126係將基板浸漬於純水中。預浸槽128係蝕刻除去形成於基板表面之種層等導電層表面的氧化膜。第一洗淨槽130a係以洗淨液(純水等)將預浸後之基板與基板固持器40一起洗淨。噴吹槽132係進行洗淨後之基板的排液。第二洗淨槽130b係以洗淨液將鍍覆後之基板與基板固持器40一起洗淨。暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a、噴吹槽132、第二洗淨槽130b、及鍍覆 槽10係依該順序配置。
鍍覆槽10例如具有具備溢流槽54之複數個鍍覆單元50。各鍍覆單元50在內部收納一個基板，並使基板浸漬於保持在內部的鍍覆液中，而在基板表面進行鍍覆。具體而言，複數個鍍覆單元50包含：用於形成後述之銅配線層的銅鍍覆單元；用於形成後述之障壁層的鎳鍍覆單元；及用於形成後述之錫合金凸塊層的錫銀鍍覆單元之任何一種鍍覆單元。如後述之第三A圖至第三G圖或第四A圖至第四F圖之說明，對基板依銅配線層、障壁層或強化障壁層、錫合金凸塊層之順序形成金屬層時，係在用於形成銅配線層之鍍覆裝置、用於形成障壁層或強化障壁層之鍍覆裝置、用於形成錫合金凸塊層之鍍覆裝置中，對被鍍覆物之基板依序進行鍍覆處理。
鍍覆裝置具有位於此等各設備之側方，在此等各設備之間與基板一起搬送基板固持器40之例如採用線性馬達方式的基板固持器搬送裝置140。該基板固持器搬送裝置140具有：第一輸送機142、及第二輸送機144。第一輸送機142係以在基板裝卸部120、暫存盒124、預濕槽126、預浸槽128、第一洗淨槽130a及噴吹槽132之間搬送基板的方式構成。第二輸送機144係以在第一洗淨槽130a、第二洗淨槽130b、噴吹槽132、及鍍覆槽10之間搬送基板的方式構成。其他實施形態亦可鍍覆裝置僅具備第一輸送機142及第二輸送機144之任何一方。
在溢流槽54之兩側配置有驅動位於各鍍覆單元50內部作為攪拌鍍覆單元50內之鍍覆液的攪混棒的槳葉18(參照第二圖)之槳葉驅動裝置19。
第二圖係第一圖所示之鍍覆槽10的概略側剖面圖。如圖式， 鍍覆槽10具有：保持陽極21而構成之陽極固持器20；保持基板W而構成之基板固持器40；及內部收容陽極固持器20與基板固持器40之鍍覆單元50。
如第二圖所示，鍍覆單元50具有：收容包含添加劑之鍍覆液Q的鍍覆處理槽52；從鍍覆處理槽52接收溢流之鍍覆液Q而排出的溢流槽54；及分隔鍍覆處理槽52與溢流槽54之分隔壁55。另外，鍍覆單元50中藉由將鍍覆液Q採用任意藥劑，可分別鍍覆後述之銅配線層、障壁層及錫合金凸塊層。
保持陽極21之陽極固持器20與保持基板W之基板固持器40浸漬於鍍覆處理槽52內的鍍覆液Q中，並將陽極21與基板W之被鍍覆面W1概略平行地相對設置。陽極21與基板W在浸漬於鍍覆處理槽52之鍍覆液Q的狀態下，藉由鍍覆電源90施加電壓。藉此，金屬離子在基板W之被鍍覆面W1上還原而在被鍍覆面W1上形成膜。在基板W附近設置用於測定鍍覆液Q之溫度的溫度計59。溫度計59所測定之溫度傳送至無圖示的控制裝置，並反饋到鍍覆單元50之控制。
鍍覆處理槽52具有用於在槽內部供給鍍覆液Q之鍍覆液供給口56。溢流槽54具有用於排出從鍍覆處理槽52溢流之鍍覆液Q的鍍覆液排出口57。鍍覆液供給口56配置於鍍覆處理槽52之底部，鍍覆液排出口57配置於溢流槽54之底部。
鍍覆液Q從鍍覆液供給口56供給至鍍覆處理槽52時，鍍覆液Q從鍍覆處理槽52溢出，越過分隔壁55而流入溢流槽54。流入溢流槽54之鍍覆液Q從鍍覆液排出口57排出，並藉由鍍覆液循環裝置58具有之加熱器或冷卻器等溫度調節機構58a將其溫度調節成希望的溫度。無圖示之控制裝置依 據來自溫度計59之輸出，藉由PID控制之控制方法等調節溫度調節機構58a的輸出，來調整鍍覆液Q之液溫。另外，溫度計59如圖示亦可浸漬於鍍覆液Q中，亦可設於基板固持器40之基板W的背面側。調節成希望溫度之鍍覆液Q以鍍覆液循環裝置58具有之過濾器58b等除去雜質。除去雜質後之鍍覆液Q藉由鍍覆液循環裝置58，並經由鍍覆液供給口56而供給至鍍覆處理槽52。
陽極固持器20具有用於調整陽極21與基板W間之電場的陽極遮罩25。陽極遮罩25例如係由電介質材料構成之概略板狀的構件，且設於陽極固持器20之前面。亦即，陽極遮罩25配置於陽極21與基板固持器40之間。陽極遮罩25在概略中央部具有供陽極21與基板W間流動之電流通過的第一開口25a。陽極遮罩25在其外周具有用於將陽極遮罩25一體地安裝於陽極固持器20的陽極遮罩安裝部25b。
鍍覆槽10進一步具有用於調整陽極21與基板W間之電場的調整板30。調整板30例如係由電介質材料構成之概略板狀的構件，且配置於陽極遮罩25與基板固持器40(基板W)之間。調整板30具有供陽極21與基板W間流動之電流通過的第二開口30a。
在調整板30與基板固持器40之間設置用於攪拌基板W之被鍍覆面W1附近的鍍覆液Q之槳葉18。槳葉18係概略棒狀的構件，且以朝向鉛直方向之方式設於鍍覆處理槽52中。槳葉18之一端固定於槳葉驅動裝置19。槳葉18藉由槳葉驅動裝置19而沿著基板W之被鍍覆面W1水平移動，藉此攪拌鍍覆液Q。
第一種實施形態之基板的製造方法係在第二圖所示之鍍覆單元50中，以形成於基板W上之抗蝕層達到希望溫度的方式，藉由溫度調 節機構58a將鍍覆液Q之溫度調節成希望溫度。由於形成於基板上之抗蝕層在鍍覆基板時與鍍覆液Q接觸，因此可將鍍覆液Q之溫度與抗蝕層的溫度視為概等。因此，本說明書中所謂在基板W上鍍覆時之溫度，係指鍍覆液Q之溫度或抗蝕層的溫度。以下，詳細說明第一種實施形態之基板的製造方法。
第三A-三G圖顯示用於說明第一種實施形態之基板的製造方法之基板W的部分剖面圖。如第三A圖所示，第一種實施形態之基板的製造方法首先準備：由銅等構成之種層301；及在種層301上具有抗蝕層302之基板W。基板W例如係二氧化矽或矽等基板。此外，抗蝕層302具有開口部，並在藉由該開口部而露出之種層301上形成後述的3層鍍覆膜。
繼續如第三B圖所示，在抗蝕層302之開口部形成銅配線層303。該銅配線層303係在第二圖所示之鍍覆單元50中藉由電解鍍覆而形成。銅配線層303例如具有約5-15μm之厚度。形成該銅配線層303時之鍍覆液Q溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性等觀點而言設定成約25℃(以下稱為第一溫度)。因此，抗蝕層302之溫度亦與鍍覆液Q之溫度同樣約為25℃。
如第三C圖所示，在銅配線層303上形成包含鎳之障壁層304(相當於障壁層之一例)。障壁層304例如具有約1-10μm之厚度。該障壁層304係在與鍍覆銅配線層303之鍍覆單元50不同的鍍覆單元50中藉由電解鍍覆而形成。第一種實施形態形成該障壁層304時之鍍覆液溫度(以下稱為第二溫度)設定成與第一溫度同等的溫度。換言之，第一種實施形態之基板的製造方法與第六A圖-第六F圖所示之過去的基板製造程序比較，障壁層304係以低的溫度鍍覆。一種實施形態係第二溫度與第一溫度相同約為25 ℃。藉此，由於形成障壁層304時之抗蝕層302與形成銅配線層303時之抗蝕層302為同等溫度，因此鍍覆障壁層304時之抗蝕層302的開口部寬度，為接近鍍覆銅配線層303時之抗蝕層302的開口部寬度之大小。因此，障壁層304之寬度為接近銅配線層303寬度之大小。另外，本說明書中所謂「寬度」，於抗蝕層202之開口部的形狀概略為圓形時，係指各層之外徑，抗蝕層202之開口部的形狀係多角形時，係指多角形各層之頂點間的距離。
繼續如第三D圖所示，在障壁層304上形成包含錫銀之錫合金凸塊層305。錫合金凸塊層305例如具有約10-50μm之厚度。該錫合金凸塊層305係在與鍍覆銅配線層303之鍍覆單元50及鍍覆障壁層304的鍍覆單元50不同之鍍覆單元50中藉由電解鍍覆而形成。形成該錫合金凸塊層305時之鍍覆液的溫度(以下稱第三溫度)宜設定成大於第二溫度之溫度。一種實施形態之第三溫度與第二溫度相同約為25℃。藉此，由於形成錫合金凸塊層305時之抗蝕層302的溫度，大於形成障壁層304時之抗蝕層302的溫度，因此鍍覆錫合金凸塊層305時之抗蝕層302的開口部寬度小於鍍覆障壁層304時之抗蝕層302的開口部寬度。因此，錫合金凸塊層305之寬度為小於障壁層304之寬度的大小。
然後，藉由抗蝕層剝離裝置除去抗蝕層302(參照第三E圖)，種層301藉由蝕刻裝置蝕刻成適切之形狀(參照第三F圖)。採用上述第一種實施形態之基板的製造方法時，如第三F圖所示，障壁層304之寬度為接近銅配線層303寬度之大小。此外，錫合金凸塊層305之寬度宜為小於障壁層304寬度之大小。
如此，當障壁層304之寬度具有與銅配線層303寬度接近的大 小時，與第六E圖所示之障壁層204具有遠比銅配線層203小的寬度時比較，平坦化熱處理錫合金凸塊層305時，平坦化熱處理後之錫合金凸塊層305難以從障壁層304側面掉落。因此，如第三G圖所示，平坦化熱處理後之錫合金凸塊層305可保持希望的球形狀，而可抑制錫合金凸塊層305與銅配線層303接觸。
如以上之說明，第一種實施形態中，形成於銅配線層303上之障壁層304係以與銅配線層303鍍覆時之溫度同等的溫度鍍覆。因此，鍍覆障壁層304時之抗蝕層302的開口部寬度為接近鍍覆銅配線層303時之抗蝕層302的開口部寬度之大小。因而，障壁層304之寬度為接近銅配線層303寬度的大小，可抑制平坦化熱處理錫合金凸塊層305時錫合金掉落到銅配線層303而接觸。第六A圖-第六F圖所示之過去的程序，其形成障壁層204時之鍍覆液的溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性觀點而言係設定為約40℃。在鍍覆程序中提高維持鍍覆速度係一個重要因素，且通常進行使鍍覆速度為最佳值之方式來設定鍍覆液溫度。但是，第一種實施形態中，藉由比過去大幅降低形成障壁層304時之鍍覆液溫度，雖然鍍覆速度及添加劑之效率性惡化，不過可使障壁層304之寬度接近銅配線層303寬度的大小。
另外，第一種實施形態中，一個例子係說明障壁層304為包含鎳者，不過不限於此，障壁層304可包含由鎳及鈷構成之群中一個以上的金屬。此等金屬係構成銅配線層303之銅難以擴散的材料，可防止銅擴散於錫合金凸塊層305。此外，第一種實施形態中，一個例子係說明錫合金凸塊層305為包含錫銀者，不過不限於此，錫合金凸塊層305可包含錫銀或錫銅。
此外，本說明書中所謂「同等溫度」，係指2個溫度之差小於5℃，並宜係指小於2.5℃，更宜係指小於1℃。第一溫度與第二溫度之差小於5℃時，障壁層304之寬度為與銅配線層303寬度十分接近的大小，可抑制平坦化熱處理錫合金凸塊層305時，錫合金掉落到銅配線層303而接觸。此外，第一溫度與第二溫度之差小於2.5℃時，障壁層304之寬度為進一步接近銅配線層303寬度的大小，可進一步抑制平坦化熱處理錫合金凸塊層305時，錫合金掉落到銅配線層303而接觸。再者，第一溫度與第二溫度之差小於1℃時，障壁層304之寬度為與銅配線層303寬度實質相同的大小，可更進一步抑制平坦化熱處理錫合金凸塊層305時錫合金掉落到銅配線層303而接觸。
<第二種實施形態>
其次，說明本發明第二種實施形態之基板的製造方法。第二種實施形態之基板的製造方法可使用第一圖及第二圖所示之鍍覆裝置來實施。第二種實施形態之基板的製造方法與第一種實施形態同樣地，係在第二圖所示之鍍覆單元50中，以形成於基板W上之抗蝕層達到希望溫度之方式藉由溫度調節機構58a將鍍覆液Q之溫度調節到希望溫度。以下，詳細說明第二種實施形態之基板的製造方法。
第四A-四F圖顯示用於說明第二種實施形態之基板的製造方法之基板W的部分剖面圖。如第四A圖所示，第二種實施形態之基板的製造方法，首先，與第一種實施形態同樣地準備：由銅等構成之種層301；及在種層301上具有抗蝕層302之基板W。
繼續如第四B圖所示，在抗蝕層302之開口部形成銅配線層 303。該銅配線層303係在第二圖所示之鍍覆單元50中藉由電解鍍覆而形成。銅配線層303例如具有約5-15μm之厚度。形成該銅配線層303時之鍍覆液Q溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性等觀點而言設定成約25℃(以下稱為第一溫度)。因此，抗蝕層302之溫度亦與鍍覆液Q之溫度同樣約為25℃。
如第四C圖所示，在銅配線層303上形成包含鎳之強化障壁層306。強化障壁層306例如具有約1-10μm之厚度。該強化障壁層306係在與鍍覆銅配線層303之鍍覆單元50不同的鍍覆單元50中藉由電解鍍覆而形成。
第二種實施形態形成該強化障壁層306時之鍍覆液溫度(以下稱為第二溫度)設定成小於第一溫度。換言之，第二種實施形態之基板的製造方法與第六A圖-第六F圖所示之過去的基板製造程序比較，強化障壁層306係以低的溫度鍍覆。一種實施形態係第二溫度約為20℃。藉此，由於形成強化障壁層306時之抗蝕層302的溫度小於形成銅配線層303時之抗蝕層302的溫度，因此鍍覆強化障壁層306時之抗蝕層302的開口部寬度，比鍍覆銅配線層303時之抗蝕層302的開口部寬度大。因此，強化障壁層306之寬度比銅配線層303寬度大。
此外，由於鍍覆強化障壁層306時之抗蝕層302的開口部寬度，比鍍覆銅配線層303時之抗蝕層302的開口部寬度大，因此會在銅配線層303之側面與抗蝕層302之間產生微小間隙。因而，鍍覆強化障壁層306時，鍍覆液Q會進入銅配線層303側面之至少一部分與抗蝕層302的間隙，也會在銅配線層303之側面的至少一部分鍍覆強化障壁層306。亦即，如第四C 圖所示，強化障壁層306覆蓋銅配線層303之側面的至少一部分。
第二溫度宜比第一溫度低5℃以上。藉此，可使強化障壁層306之寬度比銅配線層寬度充分大，可使強化障壁層306覆蓋銅配線層303之側面的面積增加。此外，第二溫度宜大於15℃。用於鍍覆強化障壁層306之鍍覆液Q依其種類包含硼酸。該硼酸在鍍覆液Q之溫度低於15℃時可能會析出。因此，第二種實施形態由於第二溫度大於15℃，因此可抑制硼酸從用於鍍覆強化障壁層306之鍍覆液Q析出。
繼續如第四D圖所示，在強化障壁層306上形成包含錫銀之錫合金凸塊層305。錫合金凸塊層305例如具有約10-50μm之厚度。該錫合金凸塊層305係在與鍍覆銅配線層303之鍍覆單元50及鍍覆強化障壁層306的鍍覆單元50不同之鍍覆單元50中藉由電解鍍覆而形成。形成該錫合金凸塊層305時之鍍覆液的溫度(以下稱第三溫度)宜設定成大於第二溫度之溫度。一種實施形態之第三溫度約為25℃。藉此，由於形成錫合金凸塊層305時之抗蝕層302的溫度，大於形成強化障壁層306時之抗蝕層302的溫度，因此鍍覆錫合金凸塊層305時之抗蝕層302的開口部寬度小於鍍覆強化障壁層306時之抗蝕層302的開口部寬度。因此，錫合金凸塊層305之寬度為小於強化障壁層306之寬度的大小。
然後，藉由抗蝕層剝離裝置除去抗蝕層302，種層301藉由蝕刻裝置蝕刻成適切之形狀(參照第四E圖)。採用上述第二種實施形態之基板的製造方法時，如第四E圖所示，強化障壁層306之寬度比銅配線層303寬度大。此外，強化障壁層306宜覆蓋銅配線層303之側面的至少一部分。錫合金凸塊層305之寬度更宜為小於強化障壁層306寬度之大小。
如此，當障壁層304之寬度比銅配線層303寬度大時，與第六E圖所示之障壁層204具有遠比銅配線層203小的寬度時比較，平坦化熱處理錫合金凸塊層305時，平坦化熱處理後之錫合金凸塊層305難以從障壁層304側面掉落。因此，如第四F圖所示，平坦化熱處理後之錫合金凸塊層305可保持希望的球形狀，而可抑制錫合金凸塊層305與銅配線層303接觸。
如以上之說明，第二種實施形態中，形成於銅配線層303上之強化障壁層306係以低於銅配線層303鍍覆時之溫度的溫度鍍覆。因此，鍍覆強化障壁層306時之抗蝕層302的開口部寬度比鍍覆銅配線層303時之抗蝕層302的開口部寬度大。因而，強化障壁層306之寬度比銅配線層303寬度大，可進一步抑制平坦化熱處理錫合金凸塊層305時錫合金掉落到銅配線層303而接觸。再者，第二種實施形態中，由於強化障壁層306覆蓋銅配線層303之側面的至少一部分，因此可進一步抑制平坦化熱處理錫合金凸塊層305時，錫合金與銅配線層303接觸。第六A圖-第六F圖所示之過去的程序，其形成障壁層204時之鍍覆液的溫度，從鍍覆速度及包含於鍍覆液之添加劑的效率性觀點而言係設定為約40℃。在鍍覆程序中提高維持鍍覆速度係一個重要因素，且通常進行使鍍覆速度為最佳值之方式來設定鍍覆液溫度。但是，第二種實施形態中，藉由比過去大幅降低形成強化障壁層306時之鍍覆液溫度，雖然鍍覆速度及添加劑之效率性惡化，不過可使強化障壁層306之寬度比銅配線層303寬度大。
另外，第二種實施形態中，一個例子係說明強化障壁層306為包含鎳者，不過不限於此，強化障壁層306可包含由鎳及鈷構成之群中一個以上的金屬。此等金屬係構成銅配線層303之銅難以擴散的材料，可防止 銅擴散於錫合金凸塊層305。此外，第二種實施形態中，一個例子係說明錫合金凸塊層305為包含錫銀者，不過不限於此，錫合金凸塊層305可包含錫銀或錫銅。
<第三種實施形態>
其次，說明本發明之第三種實施形態。第三種實施形態之鍍覆裝置的構成與第一圖所示之鍍覆裝置不同。使用第三種實施形態說明之鍍覆裝置可實施第一種實施形態及第二種實施形態說明的基板之製造方法。
第五圖係第三種實施形態之用於對基板進行鍍覆的鍍覆裝置之整體配置圖。如第五圖所示，第三種實施形態之鍍覆裝置與第一圖所示之鍍覆裝置比較，不同之處為：具有3個鍍覆單元50a、50b、50c；及各鍍覆單元50a、50b、50c具備第二洗淨槽130b。其他部分與第一圖所示之鍍覆裝置相同，因此省略說明。
如圖式，鍍覆裝置中，在噴吹槽132之後段側依序配置：具備第二洗淨槽130b之鍍覆單元50c、具備第二洗淨槽130b之鍍覆單元50b、及具備第二洗淨槽130b之鍍覆單元50a。鍍覆單元50a、50b、50c之構成具有與第二圖所示之鍍覆單元50同樣的構成(另外，各鍍覆單元50a、50b、50c中設有無圖示之槳葉)。鍍覆單元50a係用於形成第三A圖-第三F圖及第四A圖-第四F圖所示之銅配線層303的鍍覆單元。鍍覆單元50b係用於形成第三A圖-第三F圖所示之障壁層304或第四A圖-第四F圖所示之強化障壁層306的鍍覆單元。鍍覆單元50c係用於形成第三A圖-第三F圖及第四A圖-第四F圖所示之錫合金凸塊層305的鍍覆單元。
以第五圖所示之鍍覆裝置形成銅配線層303、障壁層304或強化障壁層306、及錫合金凸塊層305時，基板以預濕槽126、預浸槽128、第一洗淨槽130a處裡後，搬送至鍍覆單元50a。另外，第一洗淨槽130a之洗淨液的溫度宜與後續之鍍覆單元50a的鍍覆液溫度相同。藉此，可抑制將基板浸漬於鍍覆單元50a之鍍覆液時鍍覆液的溫度降低或上升。
鍍覆單元50a中在基板上形成銅配線層303時，將基板搬送至鍍覆單元50a具備之第二洗淨槽130b進行洗淨。第二洗淨槽130b之洗淨液溫度宜與後續之鍍覆單元50b的鍍覆液溫度相同。藉此，可抑制將基板浸漬於鍍覆單元50b之鍍覆液時鍍覆液的溫度降低或上升。
形成有銅配線層303之基板繼續搬送至鍍覆單元50b。在鍍覆單元50b中形成障壁層304或強化障壁層306時，將基板搬送至鍍覆單元50b具備之第二洗淨槽130b進行洗淨。第二洗淨槽130b之洗淨液溫度宜與後續之鍍覆單元50c的鍍覆液溫度相同。藉此，可抑制將基板浸漬於鍍覆單元50c之鍍覆液時鍍覆液的溫度降低或上升。
形成有障壁層304或強化障壁層306之基板繼續搬送至鍍覆單元50c。在鍍覆單元50c中形成錫合金凸塊層305時，將基板搬送至鍍覆單元50c具備之第二洗淨槽130b進行洗淨。洗淨後之基板搬送至噴吹槽132進行排液。然後，基板在基板裝卸部120中從基板固持器40取出，以自旋沖洗乾燥器106乾燥後收納於匣盒100。
如以上之說明，由於第五圖所示之鍍覆裝置具有3個鍍覆單元50a、50b、50c，因此可以該鍍覆裝置形成全部銅配線層303、障壁層304或強化障壁層306、及錫合金凸塊層305。
以上係說明本發明之實施形態，不過上述發明之實施形態係為了容易理解本發明者，而並非限定本發明者。本發明在不脫離其旨趣下可變更及改良，並且本發明當然包含其等效物。此外，在可解決上述問題之至少一部分的範圍、或可達到效果之至少一部分的範圍內，申請專利範圍及說明書中記載之各元件可任意組合或省略。
301:種層
302:抗蝕層
303:銅配線層
304:障壁層
W:基板

Claims (14)

  1. 一種基板之製造方法，該基板在抗蝕層開口部具有凸塊，且具有以下工序：在基板上以形成第一溫度之鍍覆液於前述抗蝕層開口部內鍍覆銅配線層；於前述抗蝕層開口部內，在前述銅配線層上以形成與第一溫度同等之第二溫度的鍍覆液鍍覆障壁層；及於前述抗蝕層開口部內，在前述障壁層上鍍覆錫合金凸塊層。
  2. 如申請專利範圍第1項之製造方法，其中前述第二溫度與前述第一溫度之差小於5℃。
  3. 如申請專利範圍第2項之製造方法，其中前述第二溫度與前述第一溫度之差為2.5℃以下。
  4. 如申請專利範圍第3項之製造方法，其中前述第二溫度與前述第一溫度之差為1℃以下。
  5. 如申請專利範圍第1項之製造方法，其中前述障壁層包含由鎳及鈷構成之群中一個以上的金屬。
  6. 一種基板之製造方法，該基板在抗蝕層開口部具有凸塊，且具有以下工序：在基板上以形成第一溫度之鍍覆液於前述抗蝕層開口部內鍍覆銅配線層；於前述抗蝕層開口部內，在前述銅配線層上以形成小於第一溫度之第二溫度的鍍覆液鍍覆強化障壁層；及 於前述抗蝕層開口部內，在前述強化障壁層上鍍覆錫合金凸塊層。
  7. 如申請專利範圍第6項之製造方法，其中前述強化障壁層之寬度比前述銅配線層的寬度大。
  8. 如申請專利範圍第7項之製造方法，其中前述強化障壁層覆蓋前述銅配線層之側面的至少一部分。
  9. 如申請專利範圍第6項之製造方法，其中前述第二溫度比前述第一溫度低5℃以上，且為15℃以上。
  10. 如申請專利範圍第6項之製造方法，其中前述強化障壁層包含由鎳及鈷構成之群中一個以上的金屬。
  11. 如申請專利範圍第1或6項之製造方法，其中鍍覆前述錫合金凸塊層之工序，包含以形成前述第二溫度以上之第三溫度的鍍覆液鍍覆前述錫合金凸塊層之工序。
  12. 一種基板，係在抗蝕層開口部具有凸塊，且具有：銅配線層，其係設於基板上的前述抗蝕層開口部內；強化障壁層，其係設於前述抗蝕層開口部內的前述銅配線層上；及前述抗蝕層開口部內的前述強化障壁層上之錫合金凸塊層；前述強化障壁層之寬度比前述銅配線層的寬度大。
  13. 如申請專利範圍第12項之基板，其中前述強化障壁層覆蓋前述銅配線層之側面的至少一部分。
  14. 如申請專利範圍第12項之基板，其中前述強化障壁層包含由鎳及鈷構成之群中一個以上的金屬。
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