US20020027080A1 - Plating apparatus and method - Google Patents
Plating apparatus and method Download PDFInfo
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- US20020027080A1 US20020027080A1 US09/809,295 US80929501A US2002027080A1 US 20020027080 A1 US20020027080 A1 US 20020027080A1 US 80929501 A US80929501 A US 80929501A US 2002027080 A1 US2002027080 A1 US 2002027080A1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Definitions
- the present invention relates to an apparatus and method for plating the processing surface, to be plated, of a substrate, and more particularly to a plating apparatus and method suited for forming a plated film in fine trenches and plugs for interconnects, and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and for forming bumps (protruding electrodes) on the surface of a semiconductor wafer for electrically connecting semiconductor chips and the substrate.
- FIG. 30 shows the general construction of a conventional plating apparatus for plating copper or the like on a semiconductor substrate.
- the conventional substrate plating apparatus is provided with a plating tank 411 that holds a plating liquid Q, and arranges a substrate W, such as a semiconductor wafer, and an anode 412 opposing each other therein.
- a plating power source 413 is connected to the substrate W and the anode 412 .
- the plating power source 413 applies a prescribed voltage thereacross, a current containing ions dissolved from the copper plate or the like serving as the anode 412 flows toward the surface (processing surface to be plated) of the substrate W and forms a plated copper film thereon.
- the substrate W is etachably held by a substrate holder 414 .
- the anode 412 which is formed of copper containing phosphorus, for example
- the substrate W the ionized copper is conveyed by the plating current and deposited on the surface of the substrate W to form a plated film.
- the plating liquid Q overflowing the wall 415 of the plating tank 411 is collected in a recovery tank 416 .
- the plating liquid Q in the recovery tank 416 is reintroduced to the plating tank 411 through a plating liquid circulation system comprising a pump 420 , a temperature regulating tank 421 ,a filter 422 and a flow meter 423 and so on.
- a plating liquid or a pretreatment liquid cannot enter deep inside of the trenches, plugs and openings, thereby leaving air bubbles therein. Such air bubbles can cause plating defects or incomplete plating.
- a tape automated bonding (TAB) or flip chip for example, it has been widely conducted to deposit gold, copper, solder, nickel or multi-layered materials thereof at prescribed areas (electrodes) on the surface of a semiconductor chip having interconnects, thereby forming protruding connecting electrodes (bumps).
- bumps electrically connect the semiconductor chip with substrate electrodes or TAB electrodes.
- electrolytic plating method vapor deposition method, printing method, and ball bump method.
- the electrolytic plating method has become in wide use due to its relatively stable performance and capability of forming fine connections, in view of the recent tendency to increasing number of I/O terminals on semiconductor chips and to finer pitch.
- the electrolytic plating method includes a spurting or cup method in which a substrate such as a semiconductor wafer is positioned horizontally with the processing surface to be plated facedown and a plating liquid is spurted from below; and a dipping method in which the substrate is placed vertically in a plating tank and immersed in a plating liquid, while a plating liquid is supplied from the bottom of the plating tank and is allowed to overflow the tank.
- a dipping method of electrolytic plating bubbles that can adversely affect the quality of the plating are easily removed and the footprint is small.
- the dipping method can be readily adapted to variations in wafer size. The dipping method is therefore considered to be suited for bump plating in which holes to be filling by the plating are relatively large and which requires a fairly long plating time.
- a seed layer 500 as an electric feed layer is first formed on the surface of the substrate W, as shown in FIG. 29A.
- a resist 502 having a height H of e.g. 20-120 ⁇ m is applied to the entire surface of the seed layer 500 .
- An opening 502 a having a diameter D of e.g. 20-200 ⁇ m is formed in a prescribed portion of the resist 502 .
- Plating is performed onto such a surface of the substrate W to deposit and grow a plated film 504 in the opening 502 a, thereby forming a bump 506 (see FIGS. 29 B- 29 E).
- the air bubbles can escape easily.
- Conventional electrolytic plating apparatuses for the dipping method employ a substrate holder which holds a substrate sealing the edge and the backside thereof, such as a semiconductor wafer, while exposing the front surface (processing surface to be plated). Since such a substrate holder is immersed in the plating liquid with the substrate when plating the surface of the substrate, it is difficult to automate the entire plating process from loading of the substrate to unloading of the substrate after plating. Further, the plating apparatus occupies a considerably large space.
- the present invention has been made in view of the above drawbacks in the related art. It is therefore a first object of the present invention to provide a plating apparatus and method which enables a plating liquid entering into fine trenches and plugs for wiring and into openings of a resist formed in a substrate, without adding a surfactant to the plating liquid, and without suffering from plating defects and incomplete plating.
- a first embodiment of a plating apparatus comprises: a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed; a plating tank for holding a plating liquid in which an anode is immersed; a diaphragm provided in the plating tank and disposed between the anode and the substrate held by the substrate holder; plating liquid circulating systems for circulating the plating liquid through the respective regions of the plating tank partitioned by the diaphragm; and a deaerating unit provided in at least one of the plating liquid circulating systems.
- the diaphragm such as an ion exchange membrane or a neutral porous diaphragm, is disposed between the substrate and the anode, thereby preventing particles generated on the anode side from flowing through the diaphragm to the substrate side.
- At least one of the plating liquid circulating systems for circulating a plating liquid through the regions in the plating tank partitioned by the diaphragm is provided with a deaerating unit for removing gas from the plating liquid during the plating process. Accordingly, it is possible to maintain a low concentration of dissolved gases in the plating liquid, thereby reducing generation of gas bubbles in the plating liquid that can cause plating defects.
- the plating apparatus preferably further comprises a monitoring unit disposed downstream of the deaerating unit for monitoring the concentration of dissolved oxygen in the plating liquid.
- the plating liquid circulating system is provided with a unit for measuring and controlling dissolved gases. Accordingly, it is possible to maintain a uniform concentration of dissolved gas in the plating liquid so as to achieve a constant and stable high-quality plating process.
- the deaerating unit preferably comprises at least a deaerating membrane and a vacuum pump, the pressure on the decompressed side of the deaerating unit being controlled.
- a plating method comprising: providing a diaphragm between a substrate and an anode immersed in a plating liquid held in a plating tank; circulating the plating liquid in each region of the plating tank partitioned by the diaphragm; and plating the substrate while maintaining the concentration of dissolved oxygen in the plating liquid between 1 ⁇ g/l (1 ppb) and 4 mg/l (4 ppm) by a deaerating unit.
- a second embodiment of a plating apparatus comprises: a cassette table for loading a cassette housing a substrate therein; a substrate holder capable of opening and closing for holding the substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed; a substrate loading/unloading unit for supporting the substrate holder, and loading and unloading the substrate; a substrate transferring device for transferring the substrate between the cassette table and the substrate loading/unloading unit; a plating tank for accommodating the substrate holder and the substrate held vertically and facing to an anode, and plating the surface of the substrate by injecting a plating liquid from the bottom thereof; and a substrate holder transferring device having a transporter that grips the substrate holder and is vertically moveable, and transfers the substrate holder between the substrate loading/unloading unit and the plating tank.
- the plating tank may comprise a plurality of plating units accommodated in an overflow tank that accommodate electrodes for dummy plating, each unit being adapted for accommodating and plating one substrate.
- the overflow tank serves as a plating tank, thereby eliminating uneven plating between the plating units.
- This configuration also increases the surface of the electrodes for dummy plating, thereby improving efficiency of the dummy plating process. Further, since most of the plating liquid is circulated through the dummy electrolytic section, it is possible to facilitate formation of a uniform plating liquid state.
- Each plating unit is preferably provided with a paddle that is disposed between the anode and the substrate, and reciprocates to agitate the plating liquid.
- the paddle generates a uniform flow of plating liquid across the entire surface of the substrate, thereby enabling formation of a plated film having a uniform thickness over the entire surface of the substrate.
- a paddle drive device for driving the paddles is preferably provided on the opposite side of the substrate holder transferring device with respect to the plating tank. With this construction, it is possible to facilitate maintenance of the substrate holder transferring device and the paddle drive device.
- the plating apparatus may comprise plating tanks for performing different types of plating, wherein each plating tank comprises an overflow tank and plating units for performing each type of plating, the plating units being accommodated in the overflow tank.
- each plating tank comprises an overflow tank and plating units for performing each type of plating, the plating units being accommodated in the overflow tank.
- a local exhaust duct may be provided along one side of the plating tank.
- an air flow is generated in a single direction toward the local exhaust duct. Accordingly, a vapor emitted from the plating tanks can be carried on this air flow, thereby preventing the vapor from contaminating the semiconductor wafers and the like.
- a stocker for storing the substrate holder in a vertical position may be provided between the substrate loading/unloading unit and the plating tank; and the substrate holder transferring device may have first and second transporters. By performing transferring operations with separate transporters, the substrate holder can be transferred more smoothly, thereby increasing throughput.
- the substrate loading/unloading unit may preferably be provided with a sensor for checking the contact state between the substrate and contact points when the substrate is loaded into the substrate holder; and the second transporter selectively transfers only such substrate that has a good contact with the contact points to a subsequent process.
- the plating operation need not be halted but allows to be continuing, if a poor contact is detected between the substrate and contact points when the substrate is loaded into the substrate holder.
- the substrate in which the poor contact is detected does not apply to the plating process, but instead is discharged from the cassette after being returned thereto.
- the substrate holder transferring device may employ a linear motor as a means for moving the transporter.
- the transporter can be moved over a long distance and the overall length of the apparatus can be reduced. Further, parts such as long ball screws that require high-precision and maintenance can be eliminated.
- the plating apparatus may further comprises a pre-wetting tank, blowing tank, and cleaning tank between the stocker and the plating tank.
- a pre-wetting tank blowing tank, and cleaning tank between the stocker and the plating tank.
- it is possible to perform a series of processes in the same apparatus such as immersing the substrate in pure water held in the pre-wetting tank to wet the surface of the substrate and improve its hydrophilic properties, performing the plating operation, thereafter cleaning the substrate in pure water in the cleaning tank, and drying the substrate in the blowing tank.
- the substrate should be placed in a pre-soaking tank after pre-wetting tank, wherein the oxide film on the seed layer is removed through chemical etching, before performing the plating operation.
- the substrate loading/unloading unit may be constructed to support two substrate holders side by side that are slidable laterally. With this construction, the apparatus requires only one mechanism for opening and closing the substrate holder and avoids the need to move the substrate transferring device laterally.
- a first embodiment of a plating apparatus for forming a protruding electrode concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising: a cassette table for loading a cassette housing the substrate therein; a plating tank for plating the substrate; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; a plating liquid regulating unit for analyzing the components of the plating liquid and adding components to the plating liquid based on the results of the analysis; and a substrate transferring device for transferring the substrate.
- a second embodiment of a plating apparatus for forming a protruding electrode concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereron comprising: a cassette table for loading a cassette housing the substrate therein; a pre-wetting tank for applying a pre-wetting treatment to the substrate to increase the wettability thereof; a plating tank for plating the substrate after the pre-wetting treatment; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; and a substrate transferring device for transferring the substrate.
- a third embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon comprising: a cassette table for loading a cassette housing the substrate therein; a pre-soaking tank for applying a pre-soaking treatment to the substrate; a plating tank for plating the substrate after the pre-soaking treatment; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrates; a deaerating unit for deaerating the plating liquid in the plating tank; and a substrate transferring device for transferring the substrates.
- a fourth embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate by plating the substrate with at least two kinds of metals, comprising: a plurality of plating tanks each for plating the substrate with each of the above metals; and a substrate transferring device for transferring the substrate, wherein the plating tanks are disposed along a transferring path of the substrate transferring device.
- a fifth embodiment of a plating apparatus for forming a protruding electrode concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising: a cassette table for loading a substrate cassette thereon; a plating tank for plating the substrate; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; an annealing unit for annealing the plated substrate; and a substrate transferring device for transferring the substrate.
- a first embodiment of a plating method for forming protruding electrodes concerns a method for forming a protruding electrode on a substrate having wiring formed thereon, comprising: holding a substrate taken out of a cassette by a substrate holder; pre-wetting the substrate held by the substrate holder; plating the pre-wetted surface of the substrate by immersing the substrate together with the substrate holder in a plating liquid; cleaning and drying the plated substrate together with the substrate holder; and taking the substrate out of the substrate holder and drying the substrate.
- a second embodiment of a plating method for forming a protruding electrode according to the present invention concerns a method for forming a protruding electrode on a substrate having wiring formed thereon, comprising: holding a substrate taken out of a cassette by a substrate holder; pre-soaking the substrate held by the substrate holder; plating the pre-soaked surface of the substrate by immersing the substrate together with the substrate holder in a plating liquid; cleaning and drying the substrate together with the substrate holder; and taking the substrate out of the substrate holder and drying the substrate.
- FIG. 1 is a schematic view of a plating apparatus according to a first embodiment of the present invention
- FIG. 2 is a schematic view of a plating apparatus according to a second embodiment of the present invention.
- FIG. 3A is a plan view of the overall plating apparatus according to a third embodiment of the present invention.
- FIG. 3B is a plan view showing a variation of the apparatus of FIG. 3A;
- FIG. 3C is a plan view showing another variation of the apparatus of FIG. 3A;
- FIG. 3D is a plan view showing an arrangement of a plating liquid regulating unit
- FIG. 3E is a plan view showing another arrangement of the plating liquid regulating unit
- FIG. 4 is a plan view of a substrate holder
- FIG. 5 is an enlarged cross-sectional view showing a substrate that is held and sealed in the substrate holder
- FIG. 6 is an enlarged cross-sectional view of the relevant portion of FIG. 5 in terms of supply of electricity to the substrate;
- FIG. 7 is a plan view showing a linear motor section (transport section) of a substrate holder transferring device
- FIG. 8 is a front view of FIG. 7;
- FIG. 9 is a front view of a transporter
- FIG. 10 is a plan view showing the arm rotating mechanism of the transporter with the phantom line;
- FIG. 11 is a plan view showing a gripping mechanism provided in the arm
- FIG. 12 is a longitudinal sectional front view of the gripping mechanism
- FIG. 13 is a plan view of a copper plating tank
- FIG. 14 is a longitudinal sectional front view of FIG. 13;
- FIG. 15A is a longitudinal sectional side view of the copper plating tank
- FIG. 15B is a longitudinal sectional side view of a pre-wetting tank
- FIG. 16 is an enlarged cross-sectional view of the copper plating tank
- FIG. 17 is an enlarged cross-sectional view of a copper plating unit
- FIG. 18 is a cross-sectional view of the section including the copper plating tank shown in FIG. 3A;
- FIG. 19 is an enlarged cross-sectional view of the portion of the copper plating unit around a plating liquid injection pipe
- FIG. 20 is a plan view of a paddle drive device
- FIG. 21 is a longitudinal sectional front view of the paddle drive device
- FIG. 22A is a plan view of a plating section of a plating apparatus according to a fourth embodiment of the present invention.
- FIG. 22B is a variation of the plating section of FIG. 22A;
- FIG. 23 is a diagram showing a local exhaust duct and duct holes connected to the local exhaust duct;
- FIG. 24 is a plan view of a plating section of a plating apparatus according to a fifth embodiment of the present invention.
- FIG. 25 is a cross-sectional view of a plating unit for use in the plating section of FIG. 24;
- FIG. 26 is a cross-sectional view of another plating unit for use in the plating section of FIG. 24;
- FIG. 27 is a plan view of a plating section of a plating apparatus according to a sixth embodiment of the present invention.
- FIG. 28 is a cross-sectional view of a plating unit for use in the plating section of FIG. 27;
- FIGS. 29A through 29E are cross-sectional views illustrating the process steps for forming a bump (protruding electrode) on a substrate.
- FIG. 30 is schematic view of a conventional plating apparatus.
- FIG. 1 shows the construction of a plating apparatus according to a first embodiment of the present invention.
- the plating apparatus includes a cation exchange membrane 318 as a diaphragm which is disposed between a cathode (substrate W) and an anode 312 connected to a plating power source 313 .
- the cation exchange membrane (diaphragm) 318 partitioned the space in the plating tank 311 into two regions T 1 including the substrate W and T 2 including the anode 312 .
- the plating apparatus of this embodiment is a copper-plating apparatus designed to form a plated copper film on the surface (processing surface to be plated) of the substrate W.
- the anode 312 is a soluble anode and a plating liquid Q is a copper sulfate solution.
- the substrate W which is detachably held by the substrate holder 314 with a watertight seal being made over the backside of the substrate W, is immerse in the plating liquid Q.
- the cation exchange membrane 318 only allows passage of Cu ions dissolved from the soluble anode 312 , while blocking passage of impurities dissolved from the anode 312 . This can minimize the amount of particles in the plating liquid Q in the substrate W side region T 1 partitioned by the cation exchange membrane 318 .
- This embodiment employs a cation exchange membrane 318 disposed between the substrate W and the anode 312 .
- a neutral porous diaphragm capable of removing small particles in place of the cation exchange membrane 318 .
- the cation exchange membrane 318 having the capability of selectively filtering ions according to their electrical energy, can be a commercial product.
- One such example of the cation exchange membrane 318 is “Selemion” manufactured by Asahi Glass Co., Ltd.
- the neutral porous diaphragm is a porous membrane formed of synthetic resin and having extremely small holes of uniform diameter.
- One such example is a product called “YUMICRON” manufactured by Yuasa Ionics Co., Ltd., which is composed of a polyester nonwoven fabric as a base material and of polyvinylidene fluoride and titanium oxide as a membrane material.
- a first plating liquid circulation system C 1 which circulates the plating liquid Q, which overflows the wall 315 of the plating tank 311 and collects in the recovery tank 316 , back to the region T 1 on the substrate W side of the plating tank 311 is provided on the substrate W side of the plating tank 311 .
- the first plating liquid circulation system C 1 includes a vacuum pump 320 that circulates the plating liquid Q through a temperature regulating unit 321 , a filter 322 , a deaerator (deaerating unit) 328 , a dissolved oxygen concentration measuring unit 340 , and a flow meter 323 .
- the temperature regulating unit 321 stabilizes the growth rate of the plated film by maintaining the plating liquid Q at a prescribed temperature.
- the filter 322 removes particles from the plating liquid Q before the plating liquid Q is reintroduced into the plating tank 311 .
- the deaerator 328 removes dissolved gases from the plating liquid Q flowing through the first plating liquid circulation system C 1 .
- the deaerator 328 is provided with a vacuum pump 329 for removing various dissolved gases including oxygen, air, and carbon dioxide and the like from the plating liquid Q flowing through the circulation system using a membrane which allows only gases to pass therethrough, while preventing the passage of liquid.
- the vacuum pump 329 removes dissolved gases from the plating liquid by drawing the gases through the membrane in the deaerator 328 .
- the dissolved oxygen concentration measuring unit 340 is provided in the first plating liquid circulation system C 1 to monitor the concentration of dissolved oxygen in the plating liquid circulating through the first plating liquid circulation system C 1 .
- the flow meter 323 measures the flow of the plating liquid Q circulating through the first plating liquid circulation system C 1 and transmits a signal representing this flow to a control unit (not shown).
- the control unit maintains the amount of plating liquid Q circulating through the first plating liquid circulation system C 1 at a fixed prescribed amount by controlling the speed of the vacuum pump 320 , for example, thereby achieving stable plating in the plating tank 311 .
- a second plating liquid circulation system C 2 is provided on the anode 312 side of the plating tank 311 partitioned by the cation exchange membrane 318 .
- the second plating liquid circulation system C 2 circulates the plating liquid Q overflowing the plating tank 311 back to the region T 2 on the anode side of the plating tank 311 by the pump 320 through the temperature regulating unit 321 , filter 322 , and flow meter 323 .
- the flow meter 323 measures the flow of the plating liquid Q circulating through the second plating liquid circulation system C 2 and transmits a signal representing this flow to a control unit (not shown).
- the control unit maintains the amount of plating liquid Q circulating through the second plating liquid circulation system C 2 at a fixed rate by controlling the speed of the vacuum pump 320 or the like.
- FIG. 2 shows a plating apparatus according to a second embodiment of the present invention.
- the second plating liquid circulation system C 2 disposed on the anode 312 side of the plating tank 311 partitioned by the cation exchange membrane 318 is further provided with the deaerator (deaerating divice) 328 and dissolved oxygen concentration measuring unit 340 .
- the plating liquid Q is deaerated while being circulated to both the regions T 1 on the substrate W (anode) side and T 2 on the anode 312 side partitioned by the cation exchange membrane 318 . Therefore, it is possible to further reduce the amount of gas bubbles in the plating liquid compared to the first embodiment shown in FIG. 1.
- the embodiments described above show copper plating on the surface of a semiconductor wafer.
- the object of the plating is not limited to semiconductor wafers.
- the present invention can also be applied to other types of substrates.
- plating metal other than copper can be used in the anode.
- the deaerator and dissolved oxygen concentration measuring unit are disposed in the circulating paths of the plating liquid in the embodiments described above, these units can also be disposed in the plating tank itself. In this way, many variations to the embodiments can be made without departing from the scope of the invention.
- the plating apparatuses of the above embodiments can provide optimal plating conditions, due to the provision of a deaerator (deaerating unit) 328 in at least one of the circulation systems C 1 and C 2 partitioned by the cation exchange membrane (diaphragm) 318 for deaerating the plating liquid Q prior to the plating process or during the plating process.
- a deaerator deaerating unit
- the cation exchange membrane diaphragm
- the dissolved oxygen concentration measuring unit 340 provided in the circulation systems C 1 and C 2 for controlling dissolved gases in the plating liquid can reduce the amount of dissolved gases in the plating liquid in the plating tank. Accordingly, there is less chance for air bubbles to be attached on the surface of the substrate (processing surface to be plated), thereby achieving a stable plating process.
- FIG. 3A shows the overall construction of a plating apparatus according to a third embodiment of the present invention.
- the plating apparatus is provided with two cassette tables 12 for placing thereon cassettes 10 that house substrates W, such as semiconductor wafers; an aligner 14 for aligning the orientation flat or notch, etc. of the substrate W in a prescribed direction; and a spin dryer 16 for spin drying the substrate at a high rotation speed after the plating process, all arranged along the same circle.
- a substrate loading/unloading unit 20 for placing the substrate holders 18 thereon, which detachably hold the substrates, is provided along a tangent line to the circle.
- a substrate transferring device 22 such as a transferring robot, is disposed in the center of these units for transferring substrates W therebetween.
- a resist peeling unit 600 for peeling the resist 502 (see FIGS. 29 A- 29 E) off from the surface of the substrate; a seed layer removing unit 602 for removing the unneeded seed layer 500 (see FIGS. 29 A- 29 E) after the plating process; a heating unit 604 for heating the plated substrate.
- a reflowing unit 606 for causing a plated film 504 (see FIGS. 29 B- 29 D) to reflow and an annealing unit 608 for annealing the substrate after reflowing may be provided in place of the heating unit 604 .
- a stocker 24 Disposed in a line that proceeds away from the substrate loading/unloading unit 20 are in order a stocker 24 for keeping and temporarily placing the substrate holders 18 ; a pre-wetting tank 26 holding pure water in which the substrate W is immersed to make the surface of the substrate more hydrophilic; a pre-soaking tank 28 holding a sulfuric acid or hydrochloric acid solution or the like for etching the surface of the seed layer formed on the surface of the substrate W in order to remove the oxidized layer having a high electrical resistance; a first cleaning tank 30 a holding pure water for cleaning the surface of the substrate; a blowing tank 32 for removing water from the substrate after the cleaning process; a second cleaning tank 30 b; and a copper plating tank 34 .
- the copper plating tank 34 includes an overflow tank 36 and a plurality of copper plating units 38 accommodated in the overflow tank 36 .
- Each copper plating unit 38 accommodates one substrate W and performs a plating process on the substrate W.
- copper plating is described as an example in this embodiment, the same description naturally holds for nickel, solder, or gold plating.
- a substrate holder transferring device (substrate transferring device) 40 is provided along the side of the units for transferring the substrate holders 18 with substrates W to each unit.
- the substrate holder transfer ring device 40 includes a first transporter 42 for transferring substrates W between the substrate loading/unloading unit 20 and stocker 24 , and a second transporter 44 for transferring substrates W between the stocker 24 , pre-wetting tank 26 , pre-soaking tank 28 , cleaning tanks 30 a and 30 b, blowing tank 32 , and copper plating tank 34 .
- a plurality of paddle driving units 46 are disposed on the opposite side of the substrate holder transferring device 40 with respect to the overflow tank 36 .
- the paddle driving units 46 drive paddles 202 (see FIGS. 20 and 21) positioned in each of the plating units 38 and serving as stirring rods for agitating the plating liquid.
- the substrate loading/unloading unit 20 is provided with a flat shaped loading plate 52 capable of sliding horizontally along rails 50 .
- the loading plate 52 supports two of substrate holders 18 side by side in a level state. After the substrate W is transferred between one of the substrate holders 18 and the substrate transferring device 22 , the flat loading plate 52 is slid in a horizontal direction, and then the substrate W is transferred between the other substrate holder 18 and the substrate transferring device 22 .
- the substrate holder 18 includes a flat, rectangular shaped fixed supporting member 54 , and a ring-shaped moveable supporting member 58 mounted on the fixed supporting member 54 and capable of opening and closing over the fixed supporting member 54 through a hinge 56 .
- a ring-like seal packing 60 having a rectangular cross-section with an open bottom with one of the parallel sides longer than the other, is mounted at the fixed supporting menber 54 side of the moveable supporting member 58 through a packing base 59 made of vinyl chloride, serving as a reinforcing member and having a good lubrication with a clamp ring 62 .
- the clamp ring 62 is held on the fixed supporting member 54 via bolts 64 passing through a plurality of long holes 62 a formed along the circumference of the clamp ring 62 so as to be rotatable and not be removed from the fixed supporting member 54 .
- Pawls 66 shaped roughly like a upside-down letter L are arranged at regular intervals around the periphery of the moveable supporting member 58 and mounted on the fixed supporting member 54 .
- a plurality of protrusions 68 are integrally formed at intervals equivalent to those of the pawls 66 on the outer surface of the clamp ring 62 .
- Slightly elongated holes 62 b are formed in e.g. three locations in the clamp ring 62 , as shown, for rotating the clamp ring 62 .
- the top surface of the protrusions 68 and the bottom surface of the pawls 66 are tapered in the rotating direction in opposing directions from each other.
- conductors (electrical contact points) 70 connected to an external electrode (not shown) are disposed on the fixed supporting member 54 .
- the edges of the conductors 70 are exposed on the surface of the fixed supporting member 54 at outer side of the substrate W.
- Depressions 71 are formed inside the moveable supporting member 58 through the seal packing 60 at a position facing the exposed portion of the conductors 70 .
- a metal armature 72 is accommodated in each of the depressions 71 .
- Each of the metal armature 72 has a rectangular cross-section with an open bottom.
- a spring 74 presses each of the metal armatures 72 against the fixed supporting member 54 .
- At least one of the contacting surface of the conductor 70 which contacts the metal armature 72 , the contacting surface of the metal armature 72 which contacts the conductor 70 , and the contacting surface of the metal armature 72 which contacts the substrate W is preferably coated with a metal such as gold or platinum by plating.
- the conductor 70 and the metal armature 72 may be made of stainless steal which has an excellent corrosion resistance.
- the moveable supporting member 58 is opened and closed by a cylinder (not shown) and the weight of the moveable supporting member 58 itself.
- a through-hole 54 a is formed in the fixed supporting member 54 .
- the cylinder is provided at a position facing the through-hole 54 a when the substrate holder 18 is mounted on the loading plate 52 .
- the moveable supporting member 58 is opened by extending a cylinder rod (not shown) to push the moveable supporting member 58 upward through the through-hole 54 a. By retracting the cylinder rod, the moveable supporting member 58 closes by its own weight.
- the moveable supporting member 58 is locked and unlocked by rotating the clamp ring 62 .
- a locking/unlocking mechanism is provided on the ceiling side.
- the locking/unlocking mechanism has pins disposed at positions corresponding to the holes 62 b of the substrate holder 18 placed on the loading plate 52 and positioned its center side. In this state, when the loading plate 52 is raised, the pins enter the holes 62 b.
- the clamp ring 62 is rotated by rotating the pins around the axial center of the clamp ring 62 . Since only one locking/unlocking mechanism is provided, after locking (or unlocking) one of the substrate holders 18 placed on the loading plate 52 , the loading plate 52 is slid horizontally in order to lock (or unlock) another substrate holder 18 .
- the substrate holder 18 is provided with a sensor for checking that the substrate W is electrically connected to a contact points when the substrate W is loaded into the substrate holder 18 . Signals from the sensor are input to a controller unit (not shown).
- a pair of hands 76 integrally formed on the end of the fixed supporting member 54 of the substrate holder 18 and shaped approximately like the letter T, serve as supports when transferring the substrate holder 18 and when holding the same in a suspended state.
- the transporter 42 of the substrate holder transferring device 40 grips the hands 76 of the substrate holder 18 in the suspended state and transfers the substrate holder 18 .
- the substrate holder 18 is also held in a vertically suspended state on the surrounding walls of the pre-wetting tank 26 , pre-soaking tank 28 , cleaning tanks 30 a, 30 b, blowing tank 32 , and copper plating tank 34 .
- FIGS. 7 and 8 show a linear motor unit 80 serving as the transport section of the substrate holder transferring device 40 .
- the linear motor unit 80 mainly comprises a lengthy base 82 and two sliders 84 , 86 that are capable of sliding along the base 82 .
- the transporters 42 and 44 are mounted on top of the sliders 84 and 86 , respectively.
- a cable conveyer bracket 88 and a cable conveyer receiver 90 are provided on the side of the base 82 .
- a cable conveyer 92 extends along the cable conveyer bracket 88 and cable conveyer receiver 90 .
- these transporters 42 , 44 can be moved over a long distance and the overall length of the apparatus can be shortened by shortening the length of the transporters 42 , 44 . Further, devices that require high-precision and maintenance, such as long ball screws, can be eliminated.
- FIGS. 9 through 12 show the transporter 42 .
- a description of the transporter 44 will be omitted here as the construction is essentially the same as that of the transporter 42 .
- the transporter 42 mainly comprises a transporter body 100 , an arm 102 protruding horizontally from the transporter body 100 , an arm raising/lowering mechanism 104 for raising and lowering the arm 102 , an arm rotating mechanism 106 for rotating the arm 102 , and gripping mechanisms 108 provided in the arm 102 for gripping and releasing the hands 76 of the substrate holder 18 .
- the raising/lowering mechanism 104 includes a rotatable ball screw 110 extending vertically and a nut 112 that engages with the ball screw 110 ; a linear motor base 114 is connected to the nut 112 .
- a timing belt 122 is looped around the drive pulley 118 fixed to the drive shaft of the raising/lowering motor 116 mounted on the transporter body 100 and a follow pulley 120 fixed to the top end of the ball screw 110 .
- the raising/lowering motor 116 drives the ball screw 110 to rotate.
- the rotation of the ball screw 110 raise and lower the linear motor base 114 connected to the nut 112 , engaging with the ball screw 110 , along a linear motor guide.
- the arm rotating mechanism 106 includes a sleeve 134 that rotatably accommodates a rotating shaft 130 and fixed to the linear motor base 114 via a mounting base 132 , and a rotating motor 138 fixed to the end of the sleeve 134 via a motor base 136 .
- a timing belt 144 looped around a drive pulley 140 fixed to the drive shaft of the rotating motor 138 and a follow pulley 142 fixed to the end of the rotating shaft 130 .
- the rotating motor 138 drives the rotating shaft 130 to rotate.
- the arm 102 is linked to the rotating shaft 130 through a coupling 146 and therefore raises and lowers and rotates together with the rotating shaft 130 .
- the arm 102 includes a pair of side plates 150 that are coupled with the rotating shaft 130 and rotate together with the same.
- the gripping mechanisms 108 are disposed between the side plates 150 , 150 .
- Two gripping mechanisms 108 are provided in this example. However, only a description of one will be given, as both have the same construction.
- the gripping mechanism 108 includes a fixed holder 152 , the end of which is accommodated between the side plates 150 , 150 and is capable of moving freely in the widthwise direction; guide shafts 154 penetrating through the inner portion of the fixed holder 152 ; and a moveable holder 156 connected to one end (the bottom end in FIG. 12) of the guide shafts 154 .
- a cylinder 158 for movement in the widthwise direction is mounted on one of the side plates 150 .
- the fixed holder 152 is coupled to the cylinder 158 through a cylinder joint 160 .
- a shaft holder 162 is mounted on the other end (the upper end in FIG. 12) of the guide shafts 154 .
- the shaft holder 162 is coupled to a cylinder 166 for vertical movement through a cylinder connector 164 .
- the fixed holder 152 together with the moveable holder 156 moves in the widthwise direction between the side plates 150 , 150 with the operations of the cylinder 158 . Further, the moveable holder 156 moves up and down, while being guided by the guide shafts 154 with the operations of the cylinder 166 .
- the moveable holder 156 can be lowered to below of the hands 76 while avoiding interference with the hands 76 .
- the cylinder 158 is operated to position the fixed holder 152 and moveable holder 156 above and below the hands 76 , thereby interposing the hands 76 between the fixed holder 152 and moveable holder 156 .
- the cylinder 166 is operated to grip the hands 76 between the fixed holder 152 and moveable holder 156 . The grip is released by performing this operation in reverse.
- a depression 76 a is formed on one of the hands 76 of the substrate holder 18 .
- a protrusion 168 for engaging the depression 76 a is provided on the moveable holder 156 at a position corresponding to the depression 76 a, enabling a more reliable grip.
- FIG. 13 through 16 shows a copper plating tank 34 accommodating four copper plating units 38 in two rows.
- the copper plating tank 34 accommodating eight plating units 38 in two rows, shown in FIG. 3A, has essentially the same construction.
- the construction of the copper plating tank 34 is the same when increasing the number of copper plating units.
- the copper plating tank 34 is provided with an overflow tank 36 formed in a rectangular box shape with an open top.
- the overflow tank 36 includes the tops of peripheral walls 170 that protrude higher than the tops 180 of peripheral walls 172 on each of the plating units 38 accommodated in the overflow tank 36 .
- a plating liquid channel 174 is formed around the plating units 38 when the plating units 38 are accommodated in the overflow tank 36 .
- a pump inlet port 178 is provided in the channel 174 . With this construction, a plating liquid that overflows the plating units 38 flows into the channel 174 and is discharged through the pump inlet port 178 .
- the overflow tank 36 is provided with a liquid leveler (not shown) for maintaining the plating liquid in each of the plating units 38 at a uniform level.
- insertion grooves 182 are provided on the inner side surfaces of the plating units 38 for guiding the substrate holder 18 .
- a plating liquid circulation system C 3 is provided for circulating the plating liquid Q which overflows the plating units 38 and collects in the overflow tank 36 with the vacuum pump 320 .
- the vacuum pump 320 circulates the plating liquid Q through a temperature regulating unit 321 , a filter 322 , a deaerator (deaerating unit) 328 , a dissolved oxygen concentration measuring unit 340 , and a flow meter 323 back to inside of the copper plating units 38 .
- the deaerator 328 is provided with a vacuum pump 329 for removing various dissolved gases, including oxygen, air, and carbon dioxide, from the plating liquid Q flowing through the circulation system using a membrane. The membrane allows only gases to pass therethrough, while preventing the passage of liquid.
- a plating liquid regulating unit 610 is further provided in a branch off the plating liquid circulation system C 3 for analyzing the plating liquid while one-tenth of the overall plating liquid, for example, is extracting. Based on the analysis results, components that are lacking in the plating liquid are added to the plating liquid.
- the plating liquid regulating unit 610 includes a plating liquid regulating tank 612 in which components lacking in the solution are added.
- a temperature controller 614 and a plating liquid analyzing unit 616 for extracting and analyzing a sample of plating liquid are disposed adjacent to the plating liquid regulating tank 612 .
- the plating liquid returns from the plating liquid regulating tank 612 to the plating liquid circulation system C 3 through a filter 620 by the operation of a pump 618 .
- the plating apparatus of the present invention employs both a feedforward control method for predicting disturbances based on the processing time and the number of substrates plated and adding components to be needed, and a feedback control method for analyzing the plating liquid and adding components that are lacking in the plating liquid based on the results on that analysis.
- a feedforward control method for predicting disturbances based on the processing time and the number of substrates plated and adding components to be needed
- a feedback control method for analyzing the plating liquid and adding components that are lacking in the plating liquid based on the results on that analysis.
- the plating liquid regulating unit 610 is disposed in a housing 609 , for example, that accommodates the cassette tables 12 , substrate loading/unloading unit 20 , stocker 24 , pre-wetting tank 26 , pre-soaking tank 28 , cleaning tanks 30 a, 30 b, and copper plating tank 34 .
- the plating liquid regulating unit 610 can also be positioned outside the housing 609 , as shown in FIG. 3E.
- the pre-wetting tank 26 is provided with a pure water circulation system C 4 which collects the pure water that has overflowed the pre-wetting unit 26 a in the overflow tank 26 b, and returns the pure water to inside the pre-wetting unit 26 a through a temperature regulating unit 321 , a filter 322 , a deaerator (deaerating unit) 328 , and a flow meter 323 by a vacuum pump 320 .
- the deaerator 328 is provided with a vacuum pump 329 for removing various dissolved gases, including oxygen, air, and carbon dioxide, from the pure water flowing through the circulation system using a membrane. The membrane allows only gases to pass therethrough, while preventing the passage of liquid.
- a pure water tank 330 for supplying the pure water to the pure water circulation system C 4 is provided.
- a plating cathode 184 and an anode 186 for dummy plating are disposed in the plating liquid channel 174 .
- the anode 186 can be formed of a titanium basket, for example, in which copper chips or the like are inserted.
- the overflow tank 36 can serve as a plating tank, thereby not only eliminating uneven plating in the plating units 38 , but also increasing the surface of the dummy electrode for improving the efficiency of dummy plating. Further, by circulating most of the plating liquid through the dummy plating section, it is possible to facilitate formation of a uniform plating liquid.
- FIG. 17 shows a cross-sectional view of the copper plating unit 38 .
- an anode 200 is disposed in the plating unit 38 at a position facing the surface of the substrate W when the substrate holder 18 holding the substrate W is disposed along the insertion grooves 182 (see FIGS. 13 and 15).
- the paddle 202 is positioned substantially vertical between the anode 200 and substrate W.
- the paddle 202 can reciprocate in a direction parallel to the substrate W by the paddle driving unit 46 , which will be described in more detail below.
- a regulation plate 204 (mask) formed with a center hole 204 a that corresponds to the size of the substrate W is provided between the substrate W and the anode 200 .
- the regulation plate 204 lowers an electrical potential around the periphery of the substrate W, thereby achieving an even more uniform thickness of the plated film.
- FIG. 18 shows a cross-section of the portion of the plating apparatus in which the copper plating tank 34 is disposed.
- FIG. 19 shows a more detailed view of the plating liquid injecting portion of FIG. 18.
- the plating liquid is supplied to the plating units 38 through plating liquid supply pipes 206 disposed lower the plating units 38 .
- the plating liquid that overflows the overflow tank 36 is discharged through a plating liquid discharge pipe 208 disposed at the lower part.
- the plating liquid supply pipes 206 are opened inside the plating units 38 at the bottom of them.
- a regulating plate 210 is mounted at the open end of the plating liquid supply pipe 206 .
- the plating liquid is injected through the regulating plate 210 into the plating unit 38 .
- a waste solution pipe 212 is attached at one open end to the plating unit 38 and positioned around the plating liquid supply pipe 206 , while the other end of the waste solution pipe 212 is connected to the plating liquid discharge pipe 208 through an elbow pipe 214 .
- the plating liquid near the plating liquid supply pipe 206 is discharged through the waste solution pipe 212 and plating liquid discharge pipe 208 , and prevented the plating liquid from being stagnant at this point.
- FIGS. 20 and 21 show the paddle driving units 46 .
- a plurality of paddle driving units 46 are provided.
- FIGS. 20 and 21 show only two paddle driving units 46 , each of the paddle driving units 46 has the same construction. Therefore, duplicate descriptions of this part will be omitted by designating the same reference number.
- the paddle driving unit 46 is provided with a paddle drive motor 220 , a crank 222 coupled to a drive shaft of the paddle drive motor 220 , a cam follower 224 mounted on the far end of the crank 222 , and a slider 228 having a grooved cam 226 in which the cam follower 224 slides.
- a paddle shaft 230 is coupled to the slider 228 and disposed across the copper plating tank 34 .
- the paddle 202 is vertically attached at prescribed locations along the length of the paddle shaft 230 .
- a shaft guide 232 supports the paddle shaft 230 and only allow the paddle shaft 230 to reciprocate in the lengthwise direction.
- the drive of the paddle drive motor 220 rotates the crank 222 .
- the rotating movement of the crank 222 is converted into linear movement in the paddle shaft 230 by the slider 228 and the cam follower 224 .
- the paddle 202 attached vertically to the paddle shaft 230 reciprocates in a direction parallel to the substrate W.
- a plating process will be described for plating a series of bump electrodes using the plating apparatus of the embodiments described above.
- a seed layer 500 as an electric feed layer is formed on the surface of a substrate.
- a resist 502 having a height H of e.g. 20-120 ⁇ m is applied over the entire surface of the seed layer 500 .
- an opening 502 a having a diameter D of e.g. 20-200 ⁇ m is formed at a prescribed position in the resist 502 .
- Such a substrate W is inserted in the cassette 10 described above with the surface (processing surface to be plated) facing upward.
- the cassette 10 is loaded onto the cassette table 12 .
- the substrate transferring device 22 takes out one substrate from the cassette 10 on the cassette table 12 and places the substrate on the aligner 14 .
- the aligner 14 aligns the orientation flat or notch or the like in the prescribed orientation.
- the substrate transferring device 22 transfers the aligned substrate W to the substrate loading/unloading unit 20 .
- the substrate loading/unloading unit 20 two substrate holders 18 accommodated in the stocker 24 are gripped by the gripping mechanisms 108 of the transporter 42 of the substrate holder transferring device 40 simultaneously.
- the arm raising/lowering mechanism 104 raises the arm 102
- the arm 102 is moved to the substrate loading/unloading unit 20 .
- the arm rotating mechanism 106 rotates the arm 102 at 90° to hold the substrate holders 18 in a horizontal state.
- the arm raising/lowering mechanism 104 lowers the arm 102 , placing both substrate holders 18 on the loading plate 52 simultaneously.
- the cylinders are operated to open the moveable supporting members 58 of the substrate holders 18 .
- the substrate transferring device 22 inserts the substrate into one of the substrate holders 18 positioned in the center of the substrate loading/unloading unit 20 .
- the cylinder performs a reverse operation to close the moveable supporting member 58 .
- the moveable supporting member 58 is locked by the locking/unlocking mechanism.
- the loading plate 52 is slid horizontally to load another substrate in the other substrate holder 18 .
- the loading plate 52 is returned to its original position.
- each of the surface of the substrate to be plated is exposed in the opening portion of the substrate holder 18 .
- the seal packing 60 seals the peripheral portion of the substrates W to prevent the plating liquid from entering thereinto. Electricity is continued through the plurality of contact points in areas not in contact with the plating liquid. Wiring is connected from the contact points to the hands 76 of the substrate holder 18 . By connecting a power source to the hands 76 , electricity can be supplied to the seed layer 500 formed on the substrate.
- the gripping mechanisms 108 of the transporter 42 of the substrate holder transferring device 40 grip both of the substrate holders 18 holding the substrate simultaneously, and the arm raising/lowering mechanism 104 raises the arm 102 .
- the arm rotating mechanism 106 rotates the arm 102 by 90°, such that the substrate holders 18 are positioned vertically.
- the arm raising/lowering mechanism 104 lowers the arm 102 , thereby suspending (temporarily placement) the two substrate holders 18 in the stocker 24 .
- the sensor mounted on the substrate holder 18 for checking the contact state between the substrate and the contact points determines a poor contact
- the sensor inputs the signal into a controller (not shown).
- the gripping mechanisms 108 of the other transporter 44 of the substrate transferring device 40 simultaneously grip two substrate holders 18 that have been holding the substrates and temporarily placed in the stocker 24 .
- the arm raising/lowering mechanism 104 of the transporter 44 raises the arm 102 and the transporter 44 transfers the substrate holders 18 to the pre-wetting tank 26 .
- the arm raising/lowering mechanism 104 lowers the arm 102 , thereby immersing the both substrate holders 18 into pure water, for example, held in the pre-wetting tank 26 .
- the pure water wets the surfaces of the substrates W to create a more hydrophilic surface.
- an aqueous liquid other than pure water can be used, providing the liquid can improve the hydrophilic property of the substrate by wetting the surface of the substrate and replacing the bubbles in the holes with water.
- the substrate holder 18 holding the substrate having the poor contact is left stored in the stocker 24 . Accordingly, when a poor contact between a substrate and the contact points of the substrate holder 18 occurs, it does not halt the apparatus, but allows plating operations to continue. The substrate with a poor contact does not apply to the plating process. Instead the substrate is returned to the cassette and discharged from the cassette.
- the substrate holders 18 holding the substrates are transferred in the same way as described above to the pre-soaking tank 28 and the substrates are immersed into a chemical liquid such as sulfuric acid or hydrochloric acid held in the pre-soaking tank 28 .
- the chemical liquid etches an oxide layer having a high electrical resistance that is formed on the surface of the seed layer and exposes a clean metal surface.
- the substrate holders 18 holding the substrates are transferred in the same way to the cleaning tank 30 a, wherein the surfaces of the substrates are cleaned by pure water held therein.
- the substrate holders 18 holding the substrates are transferred in the same way as described above to the copper plating tank 34 , which is filled with a plating liquid, and suspended in the plating units 38 .
- the transporter 44 of the substrate holder transferring device 40 repeatedly performs this operation of transferring the substrate holder 18 to the plating unit 38 and suspending the substrate holder 18 at a prescribed position therein.
- plating liquid is supplied through the plating liquid supply pipes 206 . While the plating liquid overflows into the overflow tank 36 , plating voltages are applied between the anodes 200 and the substrates. At the same time, the paddle driving units 46 reciprocate the paddles 202 in a direction parallel to the surfaces of the substrates, thereby plating the surfaces of the substrates. At this time, each of the substrate holders 18 is fixed in a suspended state by the hands 76 at the top of the plating unit 38 . Electricity is supplied from a plating power source to the seed layer on the substrate via the hand fixed portion, the hand, and the contact points.
- the plating liquid is injected into the plating units 38 through the bottom thereof and overflows into the top of the walls around the plating units 38 .
- the overflowed plating liquid is regulated of its concentration, and removed of foreign body by the filter before being reintroduced into the plating units 38 from the lower portion of the plating units 38 .
- the concentration of the plating liquid is maintained at a constant level.
- the plating liquid can be maintained at an even more uniform state by applying a dummy electrolytic voltage between the cathode 184 and the anode 186 for dummy plating.
- the application of plating voltages, supply of plating liquid, and reciprocation of the paddles are all stopped.
- the gripping mechanisms 108 of the transporter 44 of the substrate holder transferring device 40 grip two of the substrate holders 18 holding the substrates simultaneously, and transfer the substrate holders 18 to the cleaning tank 30 b, as described above.
- the substrate holders 18 are immersed in pure water held in the cleaning tank 30 b to clean the surfaces of the substrates W.
- the substrate holders 18 are transferred as described above to the blowing tank 32 , where air is blown onto the substrate holders 18 holding the substrates to remove water droplets deposited thereon.
- the substrate holders 18 are returned and suspended at prescribed positions in the stocker 24 , as described above.
- the gripping mechanisms 108 of the transporter 42 of the substrate holder transferring device 40 simultaneously grip two of the substrate holders 18 holding the substrates that have been returned to the stocker 24 after the plating process, and place the substrate holders 18 on the loading plate 52 of the substrate loading/unloading unit 20 , as described above.
- a substrate for which a poor connection was detected by the sensor mounted on the substrate holders 18 for checking contact state between the substrate and contact points and which was left in the stocker 24 is also transferred to the loading plate 52 .
- the moveable supporting member 58 in the substrate holder 18 positioned at the center of the substrate loading/unloading unit 20 is unlocked by the locking/unlocking mechanism.
- the cylinder is operated to open the moveable supporting member 58 .
- the substrate transferring device 22 takes the plating processed substrate out of the substrate holder 18 and transfers the substrate to the spin dryer 16 .
- the spin dryer 16 spins the substrate at a high rotation speed for spin drying (draining).
- the substrate transferring device 22 then transfers the substrate back to the cassette 10 .
- the loading plate 52 is slid laterally, and the same process is performed for the substrate mounted in the other substrate holder 18 so that the substrate is spin-dried and returned to the cassette 10 .
- the loading plate 52 is returned to its original position.
- the gripping mechanisms 108 of the transporter 42 grip two substrate holders 18 which now contain no substrate, at the same time, and return the substrate holders 18 to the prescribed position in the stocker 24 , as described above.
- the gripping mechanisms 108 of the transporter 42 of the substrate holder transferring device 40 grip two of the substrate holders 18 holding the substrates that have been returned to the stocker 24 after the plating process, and transfers the substrate holders 18 onto the loading plate 52 , as described above. The same process is repeated.
- the process is completed when all substrates have been taken out of the substrate holders, which have been holding substrates after the plating process and returned to the stocker 24 , spin-dried and returned to the cassette 10 .
- This process provides substrates W that have a plated film 504 grown in the opening 502 a formed in the resist 502 , as shown in FIG. 29B.
- the substrate W is spin dried, as described above, and transferred to the resist peeling unit 600 .
- the substrate W is immersed in a solvent, such as acetone, that is maintained at a temperature of 50-60° C., for example.
- the resist 502 is peeled off from the surface of the substrate W, as shown in FIG. 29C.
- the substrate W is transferred to the seed layer removing unit 602 where the unnecessary seed layer 500 exposed after the plating process is removed, as shown in FIG. 29D.
- the substrate W is transferred to the heating unit 604 comprising e.g.
- the substrate W is annealed at a temperature of, for example, 100° C. or higher, thereby removing residual stress in the bump 506 .
- This annealing process helps to form an alloy in the bump 506 when forming a bump by multi-layer plating, as described below.
- the substrate W is returned to the cassette 10 to complete the process.
- the plated film 504 is caused to reflow in the reflowing unit 606 , and then the substrate is transferred to the annealing unit 608 and annealed therein.
- the stocker 24 for accommodating the substrate holders 18 in a vertical position is provided between the substrate loading/unloading unit 20 and plating units 38 .
- the first transporter 42 of the substrate holder transferring device 40 transfers the substrate holders 18 between the substrate loading/unloading unit 20 and stocker 24
- the second transporter 44 of the substrate holder transferring device 40 transfers the substrate holders 18 between the stocker 24 and plating units 38 , respectively.
- Unused substrate holders 18 are stored in the stocker 24 . This is designed to improve throughput by providing smooth transferring of the substrate holders 18 on either side of the stocker 24 . However, it is of course possible to use one transporter to perform all transferring operations.
- a robot having a dry hand and a wet hand may be employed as the substrate transferring device 22 .
- the wet hand is used only when taking out plating-processed substrates from the substrate holders 18 .
- the dry hand is used for all other operations.
- the wet hand is not necessarily required since the backside of the substrate does not contact with plating liquid due to the seal of the substrate holder 18 .
- a bar code may be attached to the cassette 10 .
- the substrate taken out of the cassette 10 before a plating process can be returned to the same cassette 10 after the plating process, and the processing state of the substrate W and the state of the substrate holder 18 can be monitored.
- the substrate itself may be managed.
- FIGS. 22A and 23 show a plating apparatus according to a fourth embodiment of the present invention.
- This apparatus is provided with plating tanks for performing different types of plating processes and adapted to various processes freely.
- FIG. 22A shows a plating section provided with plating tanks for performing various types of plating processes.
- the plating section includes the stocker 24 ; a temporary storing platform 240 ; the pre-wetting tank 26 ; the pre-soaking tank 28 ; the first cleaning tank 30 a; a nickel plating tank 244 having an overflow tank 36 a and a plurality of nickel plating units 242 disposed in the overflow tank 36 a for performing nickel plating on the surface of a substrate; the second cleaning tank 30 b; the copper plating tank 34 having the overflow tank 36 and a plurality of the copper plating units 38 disposed in the overflow tank 36 for performing copper plating on the surface of a substrate; the third cleaning tank 30 c; the blowing tank 32 ; the fourth cleaning tank 30 d; and a solder plating tank 248 having an overflow tank 36 b and a plurality of solder plating units 246 disposed in the overflow tank 36 b for performing solder plating on the surface of a
- the constructions of the nickel plating units 242 and the solder plating units 246 are essentially the same as that of the copper plating units 38 . Further, the constructions of the nickel plating tank 244 and solder plating tank 248 accommodating the respective units in the respective overflow tanks have essentially the same construction as the copper plating tank 34 . All other constructions are the same as these described in the first embodiment.
- the substrate mounted in the substrate holder 18 applied to nickel plating, copper plating, and solder plating in order on its surface.
- this apparatus can perform a series of operations to form bump electrodes and the like with multiple plating: nickel, copper, and solder.
- the plating apparatus includes four nickel plating units 242 , four copper plating units 38 , and fourteen solder plating units 246 (22 plating units in total).
- the apparatus can comprise four nickel plating units 242 , four copper plating units 38 , and eighteen solder plating units 246 (26 plating units in total).
- the number of each type of plating units can be set arbitrarily.
- the kind of metal to be plated in each unit can also be varied.
- Ni—Cu-solder multi-layer bumps In addition to the Ni—Cu-solder multi-layer bumps, other types of multi-layer bumps that can be formed include Cu—Au-solder, Cu—Ni-solder, Cu—Ni—Au, Cu—Sn, Cu—Pd, Cu—Ni—Pd—Au, Cu—Ni—Pd, Ni-solder, and Ni—Au etc.
- the type of solder used here can be either a high melting point solder or a eutectic solder.
- bumps composed of multi-layers of Sn—Ag or Sn—Ag—Cu can be formed as alloys by performing the annealing process described above. Unlike the conventional Sn—Pb solder, Pb-free solder resolves the environmental problem of generating alpha rays.
- a local exhaust duct 250 is disposed alongside the substrate holder transferring device 40 and parallel therewith, as shown in FIG. 23, and a plurality of duct holes 252 are formed in communication with the local exhaust duct 250 .
- the duct holes 252 are designed to suck air toward the local exhaust duct 250 to generate an air flow in a single direction from the bottom of each plating tank toward the ceiling. With this configuration, a vapor emitted from each plating tank is carried by this air flow in a single direction toward the local exhaust duct 250 , thereby preventing the vapor from contaminating the substrate, etc.
- the plating apparatus in this embodiment by loading cassettes housing substrates onto the cassette table and starting the apparatus, it is possible to completely automate the electrolytic plating process by the dipping method to automatically form an appropriate plated metal layer for bump electrodes and the like on the surfaces of the substrates.
- the substrate holder holds the substrate while sealing the peripheral edges and backside thereof.
- the substrate and substrate holder are transferred together to apply to each process.
- the substrates can also be accommodated in a rack-like transferring device for transferring the substrates.
- a thermally oxidized layer Si oxide layer
- an adhesive tape film or the like can be applied to the backside of the substrates to prevent the same from being plated.
- the automatic electrolytic plating process using the dipping method is performed to form bumps on the substrate.
- bumps can also be formed by a fully automated electrolytic plating process of a jet type or cup type in which a plating liquid is spurted from below.
- FIG. 24 shows the main portion of the plating section of a plating apparatus according to a fifth embodiment.
- a plating section including a plurality of jet or cup type plating units 700 are arranged downstream of the cleaning tank 30 d shown in FIG. 22A, for example.
- the plating units 700 perform a plating process such as copper plating.
- FIG. 25 shows the plating unit 700 shown in FIG. 24.
- the plating unit 700 has a plating tank body 702 which houses therein a substrate holder 704 for holding a substrate W.
- the substrate holder 704 has a substrate holding case 706 and a rotatable shaft 708 that is rotatably supported by an inner surface of cylindrical guide member 710 through bearings 712 , 712 .
- the guide member 710 and the substrate holder 704 are vertically movable with a predetermined stroke by a cylinder 714 provided at the top of the plating tank body 702 .
- the substrate holder 704 is allowed to rotate in the direction of arrow A through the rotating shaft 708 by a motor 715 provided at an upper position in the guide member 710 .
- the substrate holder 704 has a space C therein which accommodates a substrate presser 720 that comprises a substrate presser plate 716 and a substrate presser shaft 718 .
- the substrate presser 720 is vertically movable with a predetermined stroke by a cylinder 722 provided at an upper position within the shaft 708 .
- the substrate holding case 706 of the substrate holder 704 has a bottom opening 706 a which communicates with the space C.
- the substrate holding case 706 has a step extending around an upper portion of the bottom opening 706 a for placing the outer circumferential edge of the substrate W thereon.
- the outer circumferential edge of the substrate W is placed on the step and the upper surface of the substrate W is pressed by the substrate presser plate 716 , the outer circumferential edge of the substrate W is sandwiched between the substrate presser plate 716 and the step.
- the lower surface (plating surface) of the substrate W is exposed in the bottom opening 706 a.
- a plating chamber 724 is disposed below the substrate holder 704 in the plating tank body 702 , i.e., below the plating surface of the substrate W that is exposed in the lower opening 706 a.
- a plating liquid Q is ejected from a plurality of plating liquid injection pipes 726 toward the center of the plating chamber 724 .
- the plating chamber 724 is surrounded by a collecting gutter 728 for collecting the plating liquid Q that has overflowed the plating chamber 724 .
- the plating liquid Q collected in the collecting gutter 728 is returned to a plating liquid storage tank 730 .
- the plating liquid Q in the plating liquid storage tank 730 is delivered by a pump 732 horizontally from outwardly of the plating chamber 724 therein.
- the plating liquid Q thus introduced into the plating chamber 724 is turned into a uniform vertical flow toward the plating surface of the substrate W when the substrate W is rotated and contacts with the surface of the substrate.
- the plating liquid Q that has overflowed the plating chamber 724 is collected in the collecting gutter 728 , from which the plating liquid Q flows into the plating liquid storage tank 730 .
- the plating liquid Q thus circulates between the plating chamber 724 and the plating liquid storage tank 730 .
- the level L Q of the plating liquid in the plating chamber 724 is higher than the level L W of the plating surface of the substrate W by a small distance ⁇ L. Therefore, the entire plating surface of the substrate W is contacted with the plating liquid
- Electrical contacts for electrically continuing with the conductor portion of the substrate W are provided in the step of the substrate holding case 706 .
- the electrical contacts are connected to the negative electrode of an external plating power source (not shown) through a brush.
- An anode plate 736 connected to the positive electrode of the plating power (not shown) source is provided in the bottom of the plating chamber 724 facing to the substrate W.
- the substrate holding case 706 has a substrate takeout opening 706 c defined in the sidewall thereof for inserting into and taking out the substrate therethrough by a substrate loading and unloading member such as a robot arm.
- the plating unit 700 operates as follows: The cylinder 714 is operated to lift the substrate holder 704 together with the guide member 710 by a predetermined distance, and the cylinder 722 is operated to lift the substrate presser 720 by a predetermined distance to a position where the substrate presser plate 716 is located above the substrate takeout opening 706 c. The substrate loading and unloading member such as a robot arm is then actuated to introduce the substrate W through the opening 706 c into the space C in the substrate holder 704 , and place the substrate W on the step such that the plating surface of the substrate W faces downward. The cylinder 722 is operated to lower the substrate presser plate 716 until its lower surface touches the upper surface of the substrate W, thereby sandwiching the outer circumferential edge of the substrate W between the substrate presser plate 716 and the step.
- the substrate loading and unloading member such as a robot arm is then actuated to introduce the substrate W through the opening 706 c into the space C in the substrate holder 704 , and place the
- the cylinder 714 is operated to lower the substrate holder 704 together with the guide member 710 until the plating surface of the substrate W contacts the plating liquid Q (i.e. to the position that is lower than the level L Q of the plating liquid Q by the distance ⁇ L).
- the motor 715 is energized to rotate the substrate holder 704 and the substrate W at a low speed while they are being lowered.
- the plating chamber 724 is filled with the plating liquid Q.
- the motor 715 is continuously energized to rotate the substrate holder 704 and the substrate W at a low speed.
- the speed is selected so as to form a plated film of uniform thickness on the plating surface of the substrate W without disturbing the vertical flow of the plating liquid in the plating chamber 724 .
- the cylinder 714 is operated to lift the substrate holder 704 and the substrate W.
- the motor 715 is energized to rotate at a higher speed to drain off the plating liquid from the plated surface of the substrate W and from the lower surface of the substrate holding case 706 by the action of centrifugal force.
- the cylinder 722 is operated to lift the substrate presser plate 716 to release the substrate W, which remains placed on the step of the substrate holding case 706 .
- the substrate loading and unloading member such as a robot arm is introduced through the substrate takeout opening 706 c into the space C in the substrate holder 704 , holds the substrate W. and carries the substrate W through the opening 706 c out of the substrate holder 704 .
- the above example employs the face-down method of plating with the plating unit 700 .
- FIG. 26 shows an example of a plating unit 800 to perform a face-up plating process.
- the plating unit 800 is provided with a substrate holder 802 capable of moving up and down that holds the substrate W with the surface to be plated facing upward and an electrode head 804 positioned above the substrate holder 802 .
- the electrode head 804 is in a cup shape with an open bottom and provided with a plating liquid supply inlet 806 at the upper surface which is connected to a plating liquid supply tube (not shown) and an anode 808 disposed at the bottom opening of the electrode head 804 and formed of, for example, a porous material or of a plate having a plurality of through-holes.
- a substantially cylindrical sealing member 810 is provided below the electrode head 804 .
- the top of the sealing member 810 surrounds the lower periphery of the electrode head 804 , while the diameter of the cylinder decreases toward the bottom.
- a plurality of electrical contact points 812 are disposed outside of the sealing member 810 .
- the edge portion of the substrate W contacts the sealing member 810 , forming a plating chamber 814 between the sealing member 810 and the substrate W.
- the edge portion of the substrate W contacts the electrical contact points 812 outside the contacting portion with the sealing member 810 , making the substrate W function as a cathode.
- the substrate holder 802 holding a substrate W is raised to make the edge portion of the substrate W contact the sealing material 810 , thereby forming the plating chamber 814 and allowing the substrate W to function as a cathode.
- a plating liquid is supplied into the electrode head 804 via the supply inlet 806 of the electrode head 804 and introduced through the anode 808 into the plating chamber 814 , thereby immersing the anode 808 and the surface of the substrate W, serving as the cathode, in the plating liquid.
- the plating process can be performed on the surface of the substrate W by applying a prescribed voltage from a plating power source between the anode 808 and the substrate W.
- FIG. 27 shows the main portion of the plating section of a plating apparatus according to a sixth embodiment of the present invention.
- the plating section of this plating apparatus includes a plurality of plating units 900 which are capable of opening and closing, and arranged downstream of the cleaning tank 30 d shown in FIG. 24, for example, and on two sides.
- a substrate transferring device 904 comprising a robot or the like can move along the central transferring path 902 .
- a substrate W is transferred between a substrate holding table 950 housed in the plating unit 900 and the substrate transferring device 904 .
- the plating unit 900 performs a plating process on the surface of the substrate W.
- FIG. 28 shows an example of the plating unit 900 shown in FIG. 27.
- the plating unit 900 is provided with a plating tank body 911 and a side plate 912 .
- the side plate 912 is disposed facing to the plating tank body 911 , and a depression A is formed in the surface of the plating tank body 911 facing the side plate 912 .
- a hinge mechanism disposed at the bottom of the side plate 912 , the side plate 912 can open and close the depression A formed in the plating tank body 911 .
- An insoluble anode plate 913 is disposed on a bottom surface of a bottom member 911 a of the plating tank body 911 at the depression A.
- the substrate W is mounted on the surface of the side plate 912 facing the plating tank body 911 .
- a neutral porous diaphragm or a cation exchange membrane 914 is mounted on the plating tank body 911 and positioned between the anode plate 913 and the substrate W.
- the neutral porous diaphragm or cation exchange membrane 914 divides the depression A in the plating tank body 911 into an anode chamber 915 and a cathode chamber 916 .
- a top header 918 and a bottom header 919 are provided on the top and bottom of the plating tank body 911 , respectively.
- a cavity 918 a of the top header 918 and a cavity 919 a of the bottom header 919 are in communication with the cathode chamber 916 , respectively.
- An inlet 911 b communicating with the anode chamber 915 is provided at the bottom thereof, and an overflow outlet 911 c communicating with the anode chamber 915 is provided at the top thereof.
- An overflow chamber 920 is provided adjacent to the overflow outlet 911 c and at the side of the plating tank body 911 .
- a plating liquid held in a plating liquid tank 921 is supplied by a pump 922 to the cavity 919 a of the bottom header 919 through a pipe 923 , fills the cathode chamber 916 , passes the cavity 918 a at the top of the plating tank body 911 , and returns to the plating liquid tank 921 through a pipe 924 .
- An plating liquid held in an anode solution tank 925 is supplied by a pump 926 to the anode chamber 915 through a pipe 927 , fills the anode chamber 915 , overflows the overflow outlet 911 c and flows into the overflow chamber 920 . After being stored temporarily in the overflow chamber 920 , the plating liquid is returned to the anode solution tank 925 through a discharge outlet 920 a and a pipe 928 .
- the cathode chamber 916 is hermetically sealed, while the top of the anode chamber 915 is open to the air.
- An annular packing 929 is provided around the outer periphery of the depression A formed in the plating tank body 911 .
- the annular packing 929 contacts the peripheral surface of the substrate W to hermetically seal the cathode chamber 916 .
- An external anode terminals 930 are provided outside of the annular packing 929 .
- the end of the external anode terminals 930 contact the conducting portion of the substrate W, thereby conducting electricity to the substrate W. Further, the annular packing 929 prevents the external anode terminals 930 from contacting the plating liquid.
- a plating power source 931 is connected between the anode terminals 930 and external anode plate 913 .
- the plating liquid is filled into and circulated to the cathode chamber 916 , while another plating liquid is filled into and, while being left overflowing, circulated to the anode chamber 915 .
- a plated film is formed on the surface of the substrate W by supplying an electric current from the plating power source 931 between the insoluble anode plate 913 and the substrate W, serving as a cathode.
- the anode chamber 915 and the cathode chamber 916 are partitioned, and the plating liquid is separately introduced in the respective chambers.
- the anode chamber 915 and the cathode chamber 916 may be integrated into a single chamber without providing a neutral membrane or a cation exchange membrane.
- a soluble anode plate may also be used as the anode plate 913 .
- the substrate holding table 950 in the plating unit 900 may serve also as the side plate 912 .
- the substrate holding table 950 which has received the substrate W from the substrate transferring device 904 can move to close the depression A of the plating tank body 911 .
- the other construction of the substrate holding table 950 is the same as in the above embodiment.
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Abstract
There is provided an apparatus suited for forming a plated film in fine trenches and plugs for interconnects, and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and for forming bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed; a plating tank accommodating a plating liquid in which an anode is immersed; a diaphragm provided in the plating tank and disposed between the anode and the substrate held by the substrate holder; plating liquid circulating systems for circulating the plating liquid to the respective regions of the plating tank separated by the diaphragm; and a deaerating unit disposed in at least one of the plating liquid circulating systems.
Description
- 1. Field of the Invention
- The present invention relates to an apparatus and method for plating the processing surface, to be plated, of a substrate, and more particularly to a plating apparatus and method suited for forming a plated film in fine trenches and plugs for interconnects, and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and for forming bumps (protruding electrodes) on the surface of a semiconductor wafer for electrically connecting semiconductor chips and the substrate.
- 2. Description of the Related Art
- FIG. 30 shows the general construction of a conventional plating apparatus for plating copper or the like on a semiconductor substrate. As shown in FIG. 30, the conventional substrate plating apparatus is provided with a
plating tank 411 that holds a plating liquid Q, and arranges a substrate W, such as a semiconductor wafer, and ananode 412 opposing each other therein. Aplating power source 413 is connected to the substrate W and theanode 412. When theplating power source 413 applies a prescribed voltage thereacross, a current containing ions dissolved from the copper plate or the like serving as theanode 412 flows toward the surface (processing surface to be plated) of the substrate W and forms a plated copper film thereon. The substrate W is etachably held by asubstrate holder 414. When the current flows between theanode 412, which is formed of copper containing phosphorus, for example, and the substrate W, the ionized copper is conveyed by the plating current and deposited on the surface of the substrate W to form a plated film. The plating liquid Q overflowing the wall 415 of theplating tank 411 is collected in arecovery tank 416. The plating liquid Q in therecovery tank 416 is reintroduced to theplating tank 411 through a plating liquid circulation system comprising apump 420, a temperature regulatingtank 421,afilter 422 and aflow meter 423 and so on. - When forming a plated film in fine trenches and plugs for interconnects, or in openings of a resist having poor wettability formed in a substrate, such as a semiconductor water, a plating liquid or a pretreatment liquid cannot enter deep inside of the trenches, plugs and openings, thereby leaving air bubbles therein. Such air bubbles can cause plating defects or incomplete plating.
- In order to prevent such plating defects or incomplete plating, it has been conventionally conducted to lower the surface tension of a plating liquid by adding a surfactant thereto, thereby facilitating entering of the plating liquid into the fine trenches and plugs for interconnects of the substrate to be plated, or the openings of a resist. However, air bubbles tend to generate more easily in a plating liquid during circulation when the surface tension of the plating liquid is low. Further, the addition of a surfactant to the plating liquid can cause an abnormal plating deposition and increase the amount of an organic substance taken in the plated film, leading to lowering of the properties of the plated film.
- In a tape automated bonding (TAB) or flip chip, for example, it has been widely conducted to deposit gold, copper, solder, nickel or multi-layered materials thereof at prescribed areas (electrodes) on the surface of a semiconductor chip having interconnects, thereby forming protruding connecting electrodes (bumps). Such bumps electrically connect the semiconductor chip with substrate electrodes or TAB electrodes. There are various methods for forming these bumps, including electrolytic plating method, vapor deposition method, printing method, and ball bump method. The electrolytic plating method has become in wide use due to its relatively stable performance and capability of forming fine connections, in view of the recent tendency to increasing number of I/O terminals on semiconductor chips and to finer pitch.
- The electrolytic plating method includes a spurting or cup method in which a substrate such as a semiconductor wafer is positioned horizontally with the processing surface to be plated facedown and a plating liquid is spurted from below; and a dipping method in which the substrate is placed vertically in a plating tank and immersed in a plating liquid, while a plating liquid is supplied from the bottom of the plating tank and is allowed to overflow the tank. According to the dipping method of electrolytic plating, bubbles that can adversely affect the quality of the plating are easily removed and the footprint is small. Further, the dipping method can be readily adapted to variations in wafer size. The dipping method is therefore considered to be suited for bump plating in which holes to be filling by the plating are relatively large and which requires a fairly long plating time.
- When forming bumps at prescribed areas of a substrate having interconnects, a
seed layer 500 as an electric feed layer is first formed on the surface of the substrate W, as shown in FIG. 29A. Aresist 502 having a height H of e.g. 20-120 μm is applied to the entire surface of theseed layer 500. Anopening 502 a having a diameter D of e.g. 20-200 μm is formed in a prescribed portion of theresist 502. Plating is performed onto such a surface of the substrate W to deposit and grow aplated film 504 in theopening 502 a, thereby forming a bump 506 (see FIGS. 29B-29E). When using the facedown-type electrolytic plating to form thebump 506,air bubbles 508 generated in the plating liquid are likely to remain in the inside of theopening 502 a, as shown by the dotted line in FIG. 29A, particularly when theresist 502 is hydrophobic. - When using the dipping-type electrolytic plating apparatus to form the bump, on the other hand, the air bubbles can escape easily. Conventional electrolytic plating apparatuses for the dipping method employ a substrate holder which holds a substrate sealing the edge and the backside thereof, such as a semiconductor wafer, while exposing the front surface (processing surface to be plated). Since such a substrate holder is immersed in the plating liquid with the substrate when plating the surface of the substrate, it is difficult to automate the entire plating process from loading of the substrate to unloading of the substrate after plating. Further, the plating apparatus occupies a considerably large space.
- The present invention has been made in view of the above drawbacks in the related art. It is therefore a first object of the present invention to provide a plating apparatus and method which enables a plating liquid entering into fine trenches and plugs for wiring and into openings of a resist formed in a substrate, without adding a surfactant to the plating liquid, and without suffering from plating defects and incomplete plating.
- It is a second object of the present invention to provide a plating apparatus which employs the dipping method in which air bubbles can escape relatively easily, and is capable of automatically forming a plated metal film suitable for protruding connecting electrodes such as bumps, and which does not occupy a large space.
- A first embodiment of a plating apparatus according to the present invention comprises: a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed; a plating tank for holding a plating liquid in which an anode is immersed; a diaphragm provided in the plating tank and disposed between the anode and the substrate held by the substrate holder; plating liquid circulating systems for circulating the plating liquid through the respective regions of the plating tank partitioned by the diaphragm; and a deaerating unit provided in at least one of the plating liquid circulating systems.
- Described above, the diaphragm, such as an ion exchange membrane or a neutral porous diaphragm, is disposed between the substrate and the anode, thereby preventing particles generated on the anode side from flowing through the diaphragm to the substrate side.
- Further, at least one of the plating liquid circulating systems for circulating a plating liquid through the regions in the plating tank partitioned by the diaphragm is provided with a deaerating unit for removing gas from the plating liquid during the plating process. Accordingly, it is possible to maintain a low concentration of dissolved gases in the plating liquid, thereby reducing generation of gas bubbles in the plating liquid that can cause plating defects.
- The plating apparatus preferably further comprises a monitoring unit disposed downstream of the deaerating unit for monitoring the concentration of dissolved oxygen in the plating liquid. With this construction, the plating liquid circulating system is provided with a unit for measuring and controlling dissolved gases. Accordingly, it is possible to maintain a uniform concentration of dissolved gas in the plating liquid so as to achieve a constant and stable high-quality plating process.
- The deaerating unit preferably comprises at least a deaerating membrane and a vacuum pump, the pressure on the decompressed side of the deaerating unit being controlled. With this construction, it is possible to easily remove dissolved gases from the plating liquid.
- A plating method according to the present invention, comprising: providing a diaphragm between a substrate and an anode immersed in a plating liquid held in a plating tank; circulating the plating liquid in each region of the plating tank partitioned by the diaphragm; and plating the substrate while maintaining the concentration of dissolved oxygen in the plating liquid between 1 μg/l (1 ppb) and 4 mg/l (4 ppm) by a deaerating unit.
- A second embodiment of a plating apparatus according to the present invention, comprises: a cassette table for loading a cassette housing a substrate therein; a substrate holder capable of opening and closing for holding the substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed; a substrate loading/unloading unit for supporting the substrate holder, and loading and unloading the substrate; a substrate transferring device for transferring the substrate between the cassette table and the substrate loading/unloading unit; a plating tank for accommodating the substrate holder and the substrate held vertically and facing to an anode, and plating the surface of the substrate by injecting a plating liquid from the bottom thereof; and a substrate holder transferring device having a transporter that grips the substrate holder and is vertically moveable, and transfers the substrate holder between the substrate loading/unloading unit and the plating tank.
- By starting the plating apparatus after loading the cassette housing substrates on the cassette table, it is possible to fully automate the electrolytic plating process employing the dipping method. Accordingly, it is possible to automate the formation of a plated metal film on the surface of a substrate suitable for bump electrodes and the like.
- The plating tank may comprise a plurality of plating units accommodated in an overflow tank that accommodate electrodes for dummy plating, each unit being adapted for accommodating and plating one substrate. With this configuration, the overflow tank serves as a plating tank, thereby eliminating uneven plating between the plating units. This configuration also increases the surface of the electrodes for dummy plating, thereby improving efficiency of the dummy plating process. Further, since most of the plating liquid is circulated through the dummy electrolytic section, it is possible to facilitate formation of a uniform plating liquid state.
- Each plating unit is preferably provided with a paddle that is disposed between the anode and the substrate, and reciprocates to agitate the plating liquid. With this construction, the paddle generates a uniform flow of plating liquid across the entire surface of the substrate, thereby enabling formation of a plated film having a uniform thickness over the entire surface of the substrate.
- A paddle drive device for driving the paddles is preferably provided on the opposite side of the substrate holder transferring device with respect to the plating tank. With this construction, it is possible to facilitate maintenance of the substrate holder transferring device and the paddle drive device.
- The plating apparatus may comprise plating tanks for performing different types of plating, wherein each plating tank comprises an overflow tank and plating units for performing each type of plating, the plating units being accommodated in the overflow tank. With this construction, it is possible to form multi-layer bumps comprising copper-nickel-solder, for example, in a continuous process.
- A local exhaust duct may be provided along one side of the plating tank. With this construction, an air flow is generated in a single direction toward the local exhaust duct. Accordingly, a vapor emitted from the plating tanks can be carried on this air flow, thereby preventing the vapor from contaminating the semiconductor wafers and the like.
- A stocker for storing the substrate holder in a vertical position may be provided between the substrate loading/unloading unit and the plating tank; and the substrate holder transferring device may have first and second transporters. By performing transferring operations with separate transporters, the substrate holder can be transferred more smoothly, thereby increasing throughput.
- The substrate loading/unloading unit may preferably be provided with a sensor for checking the contact state between the substrate and contact points when the substrate is loaded into the substrate holder; and the second transporter selectively transfers only such substrate that has a good contact with the contact points to a subsequent process. With this construction, the plating operation need not be halted but allows to be continuing, if a poor contact is detected between the substrate and contact points when the substrate is loaded into the substrate holder. The substrate in which the poor contact is detected does not apply to the plating process, but instead is discharged from the cassette after being returned thereto.
- The substrate holder transferring device may employ a linear motor as a means for moving the transporter. With this construction, the transporter can be moved over a long distance and the overall length of the apparatus can be reduced. Further, parts such as long ball screws that require high-precision and maintenance can be eliminated.
- The plating apparatus may further comprises a pre-wetting tank, blowing tank, and cleaning tank between the stocker and the plating tank. With this construction, it is possible to perform a series of processes in the same apparatus, such as immersing the substrate in pure water held in the pre-wetting tank to wet the surface of the substrate and improve its hydrophilic properties, performing the plating operation, thereafter cleaning the substrate in pure water in the cleaning tank, and drying the substrate in the blowing tank. When performing a plating process using solder, copper or other metals that can be oxidized to form an oxide film, the substrate should be placed in a pre-soaking tank after pre-wetting tank, wherein the oxide film on the seed layer is removed through chemical etching, before performing the plating operation.
- The substrate loading/unloading unit may be constructed to support two substrate holders side by side that are slidable laterally. With this construction, the apparatus requires only one mechanism for opening and closing the substrate holder and avoids the need to move the substrate transferring device laterally.
- A first embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising: a cassette table for loading a cassette housing the substrate therein; a plating tank for plating the substrate; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; a plating liquid regulating unit for analyzing the components of the plating liquid and adding components to the plating liquid based on the results of the analysis; and a substrate transferring device for transferring the substrate.
- A second embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereron comprising: a cassette table for loading a cassette housing the substrate therein; a pre-wetting tank for applying a pre-wetting treatment to the substrate to increase the wettability thereof; a plating tank for plating the substrate after the pre-wetting treatment; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; and a substrate transferring device for transferring the substrate.
- A third embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon comprising: a cassette table for loading a cassette housing the substrate therein; a pre-soaking tank for applying a pre-soaking treatment to the substrate; a plating tank for plating the substrate after the pre-soaking treatment; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrates; a deaerating unit for deaerating the plating liquid in the plating tank; and a substrate transferring device for transferring the substrates.
- A fourth embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate by plating the substrate with at least two kinds of metals, comprising: a plurality of plating tanks each for plating the substrate with each of the above metals; and a substrate transferring device for transferring the substrate, wherein the plating tanks are disposed along a transferring path of the substrate transferring device.
- A fifth embodiment of a plating apparatus for forming a protruding electrode according to the present invention concerns an apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising: a cassette table for loading a substrate cassette thereon; a plating tank for plating the substrate; a cleaning unit for cleaning the plated substrate; a drying unit for drying the cleaned substrate; a deaerating unit for deaerating a plating liquid in the plating tank; an annealing unit for annealing the plated substrate; and a substrate transferring device for transferring the substrate.
- A first embodiment of a plating method for forming protruding electrodes according to the present invention concerns a method for forming a protruding electrode on a substrate having wiring formed thereon, comprising: holding a substrate taken out of a cassette by a substrate holder; pre-wetting the substrate held by the substrate holder; plating the pre-wetted surface of the substrate by immersing the substrate together with the substrate holder in a plating liquid; cleaning and drying the plated substrate together with the substrate holder; and taking the substrate out of the substrate holder and drying the substrate.
- A second embodiment of a plating method for forming a protruding electrode according to the present invention concerns a method for forming a protruding electrode on a substrate having wiring formed thereon, comprising: holding a substrate taken out of a cassette by a substrate holder; pre-soaking the substrate held by the substrate holder; plating the pre-soaked surface of the substrate by immersing the substrate together with the substrate holder in a plating liquid; cleaning and drying the substrate together with the substrate holder; and taking the substrate out of the substrate holder and drying the substrate.
- FIG. 1 is a schematic view of a plating apparatus according to a first embodiment of the present invention;
- FIG. 2 is a schematic view of a plating apparatus according to a second embodiment of the present invention;
- FIG. 3A is a plan view of the overall plating apparatus according to a third embodiment of the present invention;
- FIG. 3B is a plan view showing a variation of the apparatus of FIG. 3A;
- FIG. 3C is a plan view showing another variation of the apparatus of FIG. 3A;
- FIG. 3D is a plan view showing an arrangement of a plating liquid regulating unit;
- FIG. 3E is a plan view showing another arrangement of the plating liquid regulating unit;
- FIG. 4 is a plan view of a substrate holder;
- FIG. 5 is an enlarged cross-sectional view showing a substrate that is held and sealed in the substrate holder;
- FIG. 6 is an enlarged cross-sectional view of the relevant portion of FIG. 5 in terms of supply of electricity to the substrate;
- FIG. 7 is a plan view showing a linear motor section (transport section) of a substrate holder transferring device;
- FIG. 8 is a front view of FIG. 7;
- FIG. 9 is a front view of a transporter;
- FIG. 10 is a plan view showing the arm rotating mechanism of the transporter with the phantom line;
- FIG. 11 is a plan view showing a gripping mechanism provided in the arm;
- FIG. 12 is a longitudinal sectional front view of the gripping mechanism;
- FIG. 13 is a plan view of a copper plating tank;
- FIG. 14 is a longitudinal sectional front view of FIG. 13;
- FIG. 15A is a longitudinal sectional side view of the copper plating tank;
- FIG. 15B is a longitudinal sectional side view of a pre-wetting tank;
- FIG. 16 is an enlarged cross-sectional view of the copper plating tank;
- FIG. 17 is an enlarged cross-sectional view of a copper plating unit;
- FIG. 18 is a cross-sectional view of the section including the copper plating tank shown in FIG. 3A;
- FIG. 19 is an enlarged cross-sectional view of the portion of the copper plating unit around a plating liquid injection pipe;
- FIG. 20 is a plan view of a paddle drive device;
- FIG. 21 is a longitudinal sectional front view of the paddle drive device;
- FIG. 22A is a plan view of a plating section of a plating apparatus according to a fourth embodiment of the present invention;
- FIG. 22B is a variation of the plating section of FIG. 22A;
- FIG. 23 is a diagram showing a local exhaust duct and duct holes connected to the local exhaust duct;
- FIG. 24 is a plan view of a plating section of a plating apparatus according to a fifth embodiment of the present invention;
- FIG. 25 is a cross-sectional view of a plating unit for use in the plating section of FIG. 24;
- FIG. 26 is a cross-sectional view of another plating unit for use in the plating section of FIG. 24;
- FIG. 27 is a plan view of a plating section of a plating apparatus according to a sixth embodiment of the present invention;
- FIG. 28 is a cross-sectional view of a plating unit for use in the plating section of FIG. 27;
- FIGS. 29A through 29E are cross-sectional views illustrating the process steps for forming a bump (protruding electrode) on a substrate; and
- FIG. 30 is schematic view of a conventional plating apparatus.
- Preferred embodiments of a plating apparatus according to the present invention will be described with reference to FIGS. 1 through 28. FIG. 1 shows the construction of a plating apparatus according to a first embodiment of the present invention. As shown in FIG. 1, the plating apparatus includes a
cation exchange membrane 318 as a diaphragm which is disposed between a cathode (substrate W) and ananode 312 connected to aplating power source 313. The cation exchange membrane (diaphragm) 318 partitioned the space in theplating tank 311 into two regions T1 including the substrate W and T2 including theanode 312. The plating apparatus of this embodiment is a copper-plating apparatus designed to form a plated copper film on the surface (processing surface to be plated) of the substrate W. Theanode 312 is a soluble anode and a plating liquid Q is a copper sulfate solution. The substrate W, which is detachably held by thesubstrate holder 314 with a watertight seal being made over the backside of the substrate W, is immerse in the plating liquid Q. - The
cation exchange membrane 318 only allows passage of Cu ions dissolved from thesoluble anode 312, while blocking passage of impurities dissolved from theanode 312. This can minimize the amount of particles in the plating liquid Q in the substrate W side region T1 partitioned by thecation exchange membrane 318. - This embodiment employs a
cation exchange membrane 318 disposed between the substrate W and theanode 312. However, the same effects can be obtained by using a neutral porous diaphragm capable of removing small particles in place of thecation exchange membrane 318. - The
cation exchange membrane 318, having the capability of selectively filtering ions according to their electrical energy, can be a commercial product. One such example of thecation exchange membrane 318 is “Selemion” manufactured by Asahi Glass Co., Ltd. The neutral porous diaphragm is a porous membrane formed of synthetic resin and having extremely small holes of uniform diameter. One such example is a product called “YUMICRON” manufactured by Yuasa Ionics Co., Ltd., which is composed of a polyester nonwoven fabric as a base material and of polyvinylidene fluoride and titanium oxide as a membrane material. - A first plating liquid circulation system C1 which circulates the plating liquid Q, which overflows the
wall 315 of theplating tank 311 and collects in therecovery tank 316, back to the region T1 on the substrate W side of theplating tank 311 is provided on the substrate W side of theplating tank 311. The first plating liquid circulation system C1 includes avacuum pump 320 that circulates the plating liquid Q through atemperature regulating unit 321, afilter 322, a deaerator (deaerating unit) 328, a dissolved oxygenconcentration measuring unit 340, and aflow meter 323. Thetemperature regulating unit 321 stabilizes the growth rate of the plated film by maintaining the plating liquid Q at a prescribed temperature. Thefilter 322 removes particles from the plating liquid Q before the plating liquid Q is reintroduced into theplating tank 311. - The
deaerator 328 removes dissolved gases from the plating liquid Q flowing through the first plating liquid circulation system C1. Thedeaerator 328 is provided with avacuum pump 329 for removing various dissolved gases including oxygen, air, and carbon dioxide and the like from the plating liquid Q flowing through the circulation system using a membrane which allows only gases to pass therethrough, while preventing the passage of liquid. Thevacuum pump 329 removes dissolved gases from the plating liquid by drawing the gases through the membrane in thedeaerator 328. The dissolved oxygenconcentration measuring unit 340 is provided in the first plating liquid circulation system C1 to monitor the concentration of dissolved oxygen in the plating liquid circulating through the first plating liquid circulation system C1. Based on the results of the measurements, it is possible to regulate the pressure on the decompressed side of thedeaerator 328 using a control unit (not shown) for controlling the rotational speed of thevacuum pump 329 or the like. With this method, it is possible to regulate the dissolved gases in the plating liquid at a desired concentration. It is desirable to maintain the concentration of dissolved oxygen between approximately 1 μg/l (1 ppb) and 4 mg/l (4 ppm). With this concentration, it is possible to eliminate bubbles dissolved in the plating liquid nearly into zero, thereby forming a satisfactory plated film. - The
flow meter 323 measures the flow of the plating liquid Q circulating through the first plating liquid circulation system C1 and transmits a signal representing this flow to a control unit (not shown). The control unit maintains the amount of plating liquid Q circulating through the first plating liquid circulation system C1 at a fixed prescribed amount by controlling the speed of thevacuum pump 320, for example, thereby achieving stable plating in theplating tank 311. - A second plating liquid circulation system C2 is provided on the
anode 312 side of theplating tank 311 partitioned by thecation exchange membrane 318. The second plating liquid circulation system C2 circulates the plating liquid Q overflowing theplating tank 311 back to the region T2 on the anode side of theplating tank 311 by thepump 320 through thetemperature regulating unit 321,filter 322, and flowmeter 323. Theflow meter 323 measures the flow of the plating liquid Q circulating through the second plating liquid circulation system C2 and transmits a signal representing this flow to a control unit (not shown). The control unit maintains the amount of plating liquid Q circulating through the second plating liquid circulation system C2 at a fixed rate by controlling the speed of thevacuum pump 320 or the like. - FIG. 2 shows a plating apparatus according to a second embodiment of the present invention. In this embodiment, the second plating liquid circulation system C2 disposed on the
anode 312 side of theplating tank 311 partitioned by thecation exchange membrane 318 is further provided with the deaerator (deaerating divice) 328 and dissolved oxygenconcentration measuring unit 340. Accordingly, the plating liquid Q is deaerated while being circulated to both the regions T1 on the substrate W (anode) side and T2 on theanode 312 side partitioned by thecation exchange membrane 318. Therefore, it is possible to further reduce the amount of gas bubbles in the plating liquid compared to the first embodiment shown in FIG. 1. - While not shown in the drawings, it is also possible to omit the
deaerator 328 in the first plating liquid circulation system C1 on the substrate W side, and only provide thedeaerator 328 in the second plating liquid circulation system C2 on theanode 312 side partitioned by thecation exchange membrane 318. This configuration can also supply the plating liquid with an extremely low amount of dissolved gases to the substrate W, since copper ions in the plating liquid are carried by the electrical current from theanode 312 side to the substrate W side. - By providing a
deaerator 328 in the first plating liquid circulation system C1 and/or second plating liquid circulation system C2, as described above, air bubbles introduced into the plating liquid when the plating liquid Q overflows theplating tank 311 and collects in therecovery tank 316 are removed when passing through thedeaerator 328. As a result, dissolved oxygen and other dissolved gases are removed from the plating liquid Q, thereby preventing a reaction in the plating liquid caused by the dissolved gases and achieving a stable plating environment capable of restraining side reactions and degradation of plating liquid. - The embodiments described above show copper plating on the surface of a semiconductor wafer. However, the object of the plating is not limited to semiconductor wafers. The present invention can also be applied to other types of substrates. Further, plating metal other than copper can be used in the anode. While the deaerator and dissolved oxygen concentration measuring unit are disposed in the circulating paths of the plating liquid in the embodiments described above, these units can also be disposed in the plating tank itself. In this way, many variations to the embodiments can be made without departing from the scope of the invention.
- The plating apparatuses of the above embodiments can provide optimal plating conditions, due to the provision of a deaerator (deaerating unit)328 in at least one of the circulation systems C1 and C2 partitioned by the cation exchange membrane (diaphragm) 318 for deaerating the plating liquid Q prior to the plating process or during the plating process. By preventing the generation of air bubbles on the anode and cathode sides, a plated film can be efficiently formed on the substrate W without defects caused by air bubbles.
- The dissolved oxygen
concentration measuring unit 340 provided in the circulation systems C1 and C2 for controlling dissolved gases in the plating liquid can reduce the amount of dissolved gases in the plating liquid in the plating tank. Accordingly, there is less chance for air bubbles to be attached on the surface of the substrate (processing surface to be plated), thereby achieving a stable plating process. - FIG. 3A shows the overall construction of a plating apparatus according to a third embodiment of the present invention. As shown in FIG. 3A, the plating apparatus is provided with two cassette tables12 for placing thereon
cassettes 10 that house substrates W, such as semiconductor wafers; analigner 14 for aligning the orientation flat or notch, etc. of the substrate W in a prescribed direction; and aspin dryer 16 for spin drying the substrate at a high rotation speed after the plating process, all arranged along the same circle. A substrate loading/unloading unit 20 for placing thesubstrate holders 18 thereon, which detachably hold the substrates, is provided along a tangent line to the circle. Asubstrate transferring device 22, such as a transferring robot, is disposed in the center of these units for transferring substrates W therebetween. - As shown in FIG. 3B, it is also possible to provide, around the
substrate transferring device 22, a resist peelingunit 600 for peeling the resist 502 (see FIGS. 29A-29E) off from the surface of the substrate; a seedlayer removing unit 602 for removing the unneeded seed layer 500 (see FIGS. 29A-29E) after the plating process; aheating unit 604 for heating the plated substrate. Further, as shown in FIG. 3C, areflowing unit 606 for causing a plated film 504 (see FIGS. 29B-29D) to reflow and anannealing unit 608 for annealing the substrate after reflowing may be provided in place of theheating unit 604. - Disposed in a line that proceeds away from the substrate loading/
unloading unit 20 are in order astocker 24 for keeping and temporarily placing thesubstrate holders 18; apre-wetting tank 26 holding pure water in which the substrate W is immersed to make the surface of the substrate more hydrophilic; apre-soaking tank 28 holding a sulfuric acid or hydrochloric acid solution or the like for etching the surface of the seed layer formed on the surface of the substrate W in order to remove the oxidized layer having a high electrical resistance; afirst cleaning tank 30 a holding pure water for cleaning the surface of the substrate; ablowing tank 32 for removing water from the substrate after the cleaning process; asecond cleaning tank 30 b; and acopper plating tank 34. Thecopper plating tank 34 includes anoverflow tank 36 and a plurality ofcopper plating units 38 accommodated in theoverflow tank 36. Eachcopper plating unit 38 accommodates one substrate W and performs a plating process on the substrate W. Although copper plating is described as an example in this embodiment, the same description naturally holds for nickel, solder, or gold plating. - A substrate holder transferring device (substrate transferring device)40 is provided along the side of the units for transferring the
substrate holders 18 with substrates W to each unit. The substrate holdertransfer ring device 40 includes afirst transporter 42 for transferring substrates W between the substrate loading/unloading unit 20 andstocker 24, and asecond transporter 44 for transferring substrates W between thestocker 24,pre-wetting tank 26,pre-soaking tank 28, cleaningtanks tank 32, andcopper plating tank 34. - A plurality of
paddle driving units 46 are disposed on the opposite side of the substrateholder transferring device 40 with respect to theoverflow tank 36. Thepaddle driving units 46 drive paddles 202 (see FIGS. 20 and 21) positioned in each of the platingunits 38 and serving as stirring rods for agitating the plating liquid. - The substrate loading/
unloading unit 20 is provided with a flatshaped loading plate 52 capable of sliding horizontally along rails 50. Theloading plate 52 supports two ofsubstrate holders 18 side by side in a level state. After the substrate W is transferred between one of thesubstrate holders 18 and thesubstrate transferring device 22, theflat loading plate 52 is slid in a horizontal direction, and then the substrate W is transferred between theother substrate holder 18 and thesubstrate transferring device 22. - As shown in FIGS. 4 through 6, the
substrate holder 18 includes a flat, rectangular shaped fixed supportingmember 54, and a ring-shapedmoveable supporting member 58 mounted on the fixed supportingmember 54 and capable of opening and closing over the fixed supportingmember 54 through ahinge 56. A ring-like seal packing 60, having a rectangular cross-section with an open bottom with one of the parallel sides longer than the other, is mounted at the fixed supporting menber54 side of the moveable supportingmember 58 through apacking base 59 made of vinyl chloride, serving as a reinforcing member and having a good lubrication with aclamp ring 62. Theclamp ring 62 is held on the fixed supportingmember 54 viabolts 64 passing through a plurality oflong holes 62 a formed along the circumference of theclamp ring 62 so as to be rotatable and not be removed from the fixed supportingmember 54. -
Pawls 66 shaped roughly like a upside-down letter L are arranged at regular intervals around the periphery of the moveable supportingmember 58 and mounted on the fixed supportingmember 54. A plurality ofprotrusions 68 are integrally formed at intervals equivalent to those of thepawls 66 on the outer surface of theclamp ring 62. Slightlyelongated holes 62 b are formed in e.g. three locations in theclamp ring 62, as shown, for rotating theclamp ring 62. The top surface of theprotrusions 68 and the bottom surface of thepawls 66 are tapered in the rotating direction in opposing directions from each other. - When the moveable supporting
member 58 is in an open state, a substrate W is inserted and positioned correctly in the center of the fixed supportingmember 54. The moveable supportingmember 58 is closed through thehinge 56. Subsequently, theclamp ring 62 is rotated in the clockwise direction until theprotrusions 68 slide under thepawls 66 shaped roughly like a upside-down letter L, thereby locking the moveable supportingmember 58 to the fixed supportingmember 54. By rotating theclamp ring 62 in the counterclockwise direction, theprotrusions 68 slide out from under thepawls 66 shaped roughly like a upside-down letter L, thereby unlocking the moveable supportingmember 58 from the fixed supportingmember 54. - As shown in FIG. 6, when the moveable supporting
member 58 is locked on the fixed supportingmember 54, the short leg of the seal packing 60 on the inner side is in press contact with the surface of the substrate W, while the longer leg on the outer side is in press contact with the surface of the fixed supportingmember 54, thereby forming a reliable seal. - As shown in FIG. 6, conductors (electrical contact points)70 connected to an external electrode (not shown) are disposed on the fixed supporting
member 54. The edges of theconductors 70 are exposed on the surface of the fixed supportingmember 54 at outer side of thesubstrate W. Depressions 71 are formed inside the moveable supportingmember 58 through the seal packing 60 at a position facing the exposed portion of theconductors 70. Ametal armature 72 is accommodated in each of thedepressions 71. Each of themetal armature 72 has a rectangular cross-section with an open bottom. Aspring 74 presses each of themetal armatures 72 against the fixed supportingmember 54. - With this construction, when the moveable supporting
member 58 is in a locked position described above, the pressing forces of thesprings 74 provide electrical contacts between the exposed portions of theconductors 70 and the outer legs of themetal armatures 72, and also between the inner legs of themetal armatures 72 and the substrate W at the sealed position by the seal packing 60. In this way, electricity can be supplied to the substrate W while the substrate W is in a sealed state. - At least one of the contacting surface of the
conductor 70 which contacts themetal armature 72, the contacting surface of themetal armature 72 which contacts theconductor 70, and the contacting surface of themetal armature 72 which contacts the substrate W is preferably coated with a metal such as gold or platinum by plating. Alternatively, theconductor 70 and themetal armature 72 may be made of stainless steal which has an excellent corrosion resistance. - The
moveable supporting member 58 is opened and closed by a cylinder (not shown) and the weight of the moveable supportingmember 58 itself. A through-hole 54 a is formed in the fixed supportingmember 54. The cylinder is provided at a position facing the through-hole 54 a when thesubstrate holder 18 is mounted on theloading plate 52. With this construction, the moveable supportingmember 58 is opened by extending a cylinder rod (not shown) to push the moveable supportingmember 58 upward through the through-hole 54 a. By retracting the cylinder rod, the moveable supportingmember 58 closes by its own weight. - In this embodiment, the moveable supporting
member 58 is locked and unlocked by rotating theclamp ring 62. A locking/unlocking mechanism is provided on the ceiling side. The locking/unlocking mechanism has pins disposed at positions corresponding to theholes 62 b of thesubstrate holder 18 placed on theloading plate 52 and positioned its center side. In this state, when theloading plate 52 is raised, the pins enter theholes 62 b. Theclamp ring 62 is rotated by rotating the pins around the axial center of theclamp ring 62. Since only one locking/unlocking mechanism is provided, after locking (or unlocking) one of thesubstrate holders 18 placed on theloading plate 52, theloading plate 52 is slid horizontally in order to lock (or unlock) anothersubstrate holder 18. - The
substrate holder 18 is provided with a sensor for checking that the substrate W is electrically connected to a contact points when the substrate W is loaded into thesubstrate holder 18. Signals from the sensor are input to a controller unit (not shown). - A pair of
hands 76, integrally formed on the end of the fixed supportingmember 54 of thesubstrate holder 18 and shaped approximately like the letter T, serve as supports when transferring thesubstrate holder 18 and when holding the same in a suspended state. When the protruding ends of thehands 76 are caught on the upper wall in thestocker 24, thesubstrate holder 18 is held in a vertically suspended state. Thetransporter 42 of the substrateholder transferring device 40 grips thehands 76 of thesubstrate holder 18 in the suspended state and transfers thesubstrate holder 18. Thesubstrate holder 18 is also held in a vertically suspended state on the surrounding walls of thepre-wetting tank 26,pre-soaking tank 28, cleaningtanks tank 32, andcopper plating tank 34. - FIGS. 7 and 8 show a
linear motor unit 80 serving as the transport section of the substrateholder transferring device 40. Thelinear motor unit 80 mainly comprises alengthy base 82 and twosliders base 82. Thetransporters sliders cable conveyer bracket 88 and acable conveyer receiver 90 are provided on the side of thebase 82. Acable conveyer 92 extends along thecable conveyer bracket 88 andcable conveyer receiver 90. - By employing a linear motor for moving the
transporters transporters transporters - FIGS. 9 through 12 show the
transporter 42. A description of thetransporter 44 will be omitted here as the construction is essentially the same as that of thetransporter 42. Thetransporter 42 mainly comprises atransporter body 100, anarm 102 protruding horizontally from thetransporter body 100, an arm raising/lowering mechanism 104 for raising and lowering thearm 102, an armrotating mechanism 106 for rotating thearm 102, andgripping mechanisms 108 provided in thearm 102 for gripping and releasing thehands 76 of thesubstrate holder 18. - As shown in FIGS. 9 and 10, the raising/
lowering mechanism 104 includes arotatable ball screw 110 extending vertically and a nut 112 that engages with theball screw 110; alinear motor base 114 is connected to the nut 112. Atiming belt 122 is looped around thedrive pulley 118 fixed to the drive shaft of the raising/lowering motor 116 mounted on thetransporter body 100 and afollow pulley 120 fixed to the top end of theball screw 110. With this construction, the raising/lowering motor 116 drives theball screw 110 to rotate. The rotation of theball screw 110 raise and lower thelinear motor base 114 connected to the nut 112, engaging with theball screw 110, along a linear motor guide. - As shown in FIG. 10 by the phantom line, the arm
rotating mechanism 106 includes asleeve 134 that rotatably accommodates arotating shaft 130 and fixed to thelinear motor base 114 via a mountingbase 132, and arotating motor 138 fixed to the end of thesleeve 134 via amotor base 136. Atiming belt 144 looped around adrive pulley 140 fixed to the drive shaft of therotating motor 138 and afollow pulley 142 fixed to the end of therotating shaft 130. With this construction, therotating motor 138 drives therotating shaft 130 to rotate. Thearm 102 is linked to therotating shaft 130 through acoupling 146 and therefore raises and lowers and rotates together with therotating shaft 130. - As shown in FIGS. 11 and 12 and indicated by the phantom line in FIG. 10, the
arm 102 includes a pair ofside plates 150 that are coupled with therotating shaft 130 and rotate together with the same. Thegripping mechanisms 108 are disposed between theside plates gripping mechanisms 108 are provided in this example. However, only a description of one will be given, as both have the same construction. - The
gripping mechanism 108 includes a fixedholder 152, the end of which is accommodated between theside plates shafts 154 penetrating through the inner portion of the fixedholder 152; and amoveable holder 156 connected to one end (the bottom end in FIG. 12) of theguide shafts 154. Acylinder 158 for movement in the widthwise direction is mounted on one of theside plates 150. The fixedholder 152 is coupled to thecylinder 158 through a cylinder joint 160. Ashaft holder 162 is mounted on the other end (the upper end in FIG. 12) of theguide shafts 154. Theshaft holder 162 is coupled to acylinder 166 for vertical movement through acylinder connector 164. - With this construction, the fixed
holder 152 together with themoveable holder 156 moves in the widthwise direction between theside plates cylinder 158. Further, themoveable holder 156 moves up and down, while being guided by theguide shafts 154 with the operations of thecylinder 166. - When the
gripping mechanism 108 grips thehands 76 of thesubstrate holder 18 that is suspended in thestocker 24 and the like, themoveable holder 156 can be lowered to below of thehands 76 while avoiding interference with thehands 76. Subsequently, thecylinder 158 is operated to position the fixedholder 152 andmoveable holder 156 above and below thehands 76, thereby interposing thehands 76 between the fixedholder 152 andmoveable holder 156. In this state, thecylinder 166 is operated to grip thehands 76 between the fixedholder 152 andmoveable holder 156. The grip is released by performing this operation in reverse. - As shown in FIG. 4, a
depression 76 a is formed on one of thehands 76 of thesubstrate holder 18. Aprotrusion 168 for engaging thedepression 76 a is provided on themoveable holder 156 at a position corresponding to thedepression 76 a, enabling a more reliable grip. - FIGS. 13 through 16 shows a
copper plating tank 34 accommodating fourcopper plating units 38 in two rows. Thecopper plating tank 34 accommodating eight platingunits 38 in two rows, shown in FIG. 3A, has essentially the same construction. The construction of thecopper plating tank 34 is the same when increasing the number of copper plating units. - The
copper plating tank 34 is provided with anoverflow tank 36 formed in a rectangular box shape with an open top. Theoverflow tank 36 includes the tops ofperipheral walls 170 that protrude higher than thetops 180 ofperipheral walls 172 on each of the platingunits 38 accommodated in theoverflow tank 36. A platingliquid channel 174 is formed around the platingunits 38 when the platingunits 38 are accommodated in theoverflow tank 36. Apump inlet port 178 is provided in thechannel 174. With this construction, a plating liquid that overflows the platingunits 38 flows into thechannel 174 and is discharged through thepump inlet port 178. Further, theoverflow tank 36 is provided with a liquid leveler (not shown) for maintaining the plating liquid in each of the platingunits 38 at a uniform level. - As shown in FIGS. 13 and 15A,
insertion grooves 182 are provided on the inner side surfaces of the platingunits 38 for guiding thesubstrate holder 18. - As described above, a plating liquid circulation system C3 is provided for circulating the plating liquid Q which overflows the plating
units 38 and collects in theoverflow tank 36 with thevacuum pump 320. Thevacuum pump 320 circulates the plating liquid Q through atemperature regulating unit 321, afilter 322, a deaerator (deaerating unit) 328, a dissolved oxygenconcentration measuring unit 340, and aflow meter 323 back to inside of thecopper plating units 38. Thedeaerator 328 is provided with avacuum pump 329 for removing various dissolved gases, including oxygen, air, and carbon dioxide, from the plating liquid Q flowing through the circulation system using a membrane. The membrane allows only gases to pass therethrough, while preventing the passage of liquid. - A plating
liquid regulating unit 610 is further provided in a branch off the plating liquid circulation system C3 for analyzing the plating liquid while one-tenth of the overall plating liquid, for example, is extracting. Based on the analysis results, components that are lacking in the plating liquid are added to the plating liquid. The platingliquid regulating unit 610 includes a platingliquid regulating tank 612 in which components lacking in the solution are added. Atemperature controller 614 and a platingliquid analyzing unit 616 for extracting and analyzing a sample of plating liquid are disposed adjacent to the platingliquid regulating tank 612. The plating liquid returns from the platingliquid regulating tank 612 to the plating liquid circulation system C3 through afilter 620 by the operation of apump 618. - In this example, the plating apparatus of the present invention employs both a feedforward control method for predicting disturbances based on the processing time and the number of substrates plated and adding components to be needed, and a feedback control method for analyzing the plating liquid and adding components that are lacking in the plating liquid based on the results on that analysis. Of course, it is also possible to use only the feedback control method.
- As shown in FIG. 3D, the plating
liquid regulating unit 610 is disposed in ahousing 609, for example, that accommodates the cassette tables 12, substrate loading/unloading unit 20,stocker 24,pre-wetting tank 26,pre-soaking tank 28, cleaningtanks copper plating tank 34. The platingliquid regulating unit 610 can also be positioned outside thehousing 609, as shown in FIG. 3E. - As shown in FIG. 15B, the
pre-wetting tank 26 is provided with a pure water circulation system C4 which collects the pure water that has overflowed thepre-wetting unit 26 a in theoverflow tank 26 b, and returns the pure water to inside thepre-wetting unit 26 a through atemperature regulating unit 321, afilter 322, a deaerator (deaerating unit) 328, and aflow meter 323 by avacuum pump 320. Thedeaerator 328 is provided with avacuum pump 329 for removing various dissolved gases, including oxygen, air, and carbon dioxide, from the pure water flowing through the circulation system using a membrane. The membrane allows only gases to pass therethrough, while preventing the passage of liquid. Apure water tank 330 for supplying the pure water to the pure water circulation system C4 is provided. - As shown in FIG. 16, a
plating cathode 184 and ananode 186 for dummy plating are disposed in the platingliquid channel 174. Theanode 186 can be formed of a titanium basket, for example, in which copper chips or the like are inserted. In this way, theoverflow tank 36 can serve as a plating tank, thereby not only eliminating uneven plating in theplating units 38, but also increasing the surface of the dummy electrode for improving the efficiency of dummy plating. Further, by circulating most of the plating liquid through the dummy plating section, it is possible to facilitate formation of a uniform plating liquid. - FIG. 17 shows a cross-sectional view of the
copper plating unit 38. As shown in FIG. 17, ananode 200 is disposed in theplating unit 38 at a position facing the surface of the substrate W when thesubstrate holder 18 holding the substrate W is disposed along the insertion grooves 182 (see FIGS. 13 and 15). Thepaddle 202 is positioned substantially vertical between theanode 200 and substrate W. Thepaddle 202 can reciprocate in a direction parallel to the substrate W by thepaddle driving unit 46, which will be described in more detail below. - By providing the
paddle 202 between the substrate W and theanode 200, and reciprocating thepaddle 202 in a direction parallel to the surface of the substrate W, a uniform flow of plating liquid can be created across the entire surface of the substrate W, thereby forming a plated film with a uniform thickness over the entire surface of the substrate W. - In this example, a regulation plate204 (mask) formed with a
center hole 204 a that corresponds to the size of the substrate W is provided between the substrate W and theanode 200. Theregulation plate 204 lowers an electrical potential around the periphery of the substrate W, thereby achieving an even more uniform thickness of the plated film. - FIG. 18 shows a cross-section of the portion of the plating apparatus in which the
copper plating tank 34 is disposed. FIG. 19 shows a more detailed view of the plating liquid injecting portion of FIG. 18. As shown in FIG. 18, the plating liquid is supplied to theplating units 38 through platingliquid supply pipes 206 disposed lower theplating units 38. The plating liquid that overflows theoverflow tank 36 is discharged through a platingliquid discharge pipe 208 disposed at the lower part. - As shown in FIG. 19, the plating
liquid supply pipes 206 are opened inside the platingunits 38 at the bottom of them. A regulatingplate 210 is mounted at the open end of the platingliquid supply pipe 206. The plating liquid is injected through the regulatingplate 210 into theplating unit 38. Awaste solution pipe 212 is attached at one open end to theplating unit 38 and positioned around the platingliquid supply pipe 206, while the other end of thewaste solution pipe 212 is connected to the platingliquid discharge pipe 208 through anelbow pipe 214. With this configuration, the plating liquid near the platingliquid supply pipe 206 is discharged through thewaste solution pipe 212 and platingliquid discharge pipe 208, and prevented the plating liquid from being stagnant at this point. - FIGS. 20 and 21 show the
paddle driving units 46. In this example, a plurality ofpaddle driving units 46 are provided. Although FIGS. 20 and 21 show only twopaddle driving units 46, each of thepaddle driving units 46 has the same construction. Therefore, duplicate descriptions of this part will be omitted by designating the same reference number. - The
paddle driving unit 46 is provided with apaddle drive motor 220, a crank 222 coupled to a drive shaft of thepaddle drive motor 220, acam follower 224 mounted on the far end of thecrank 222, and aslider 228 having agrooved cam 226 in which thecam follower 224 slides. Apaddle shaft 230 is coupled to theslider 228 and disposed across thecopper plating tank 34. Thepaddle 202 is vertically attached at prescribed locations along the length of thepaddle shaft 230. Ashaft guide 232 supports thepaddle shaft 230 and only allow thepaddle shaft 230 to reciprocate in the lengthwise direction. - With this construction, the drive of the
paddle drive motor 220 rotates thecrank 222. The rotating movement of thecrank 222 is converted into linear movement in thepaddle shaft 230 by theslider 228 and thecam follower 224. As described above, thepaddle 202 attached vertically to thepaddle shaft 230 reciprocates in a direction parallel to the substrate W. - Different diameters of substrates W can be easily handled by adjusting the mounting position of the
paddle 202 on thepaddle shaft 230 to a desirable position. Since thepaddle 202 reciprocates constantly during the plating process, this movement has generated wear in the mechanical parts and has caused the generation of particles through the mechanical sliding. In this example, however, the construction of the paddle support units has been improved, thereby improving the durability of the mechanism and greatly reducing the occurrence of such problems. - Next, a plating process will be described for plating a series of bump electrodes using the plating apparatus of the embodiments described above. As shown in FIG. 29A, a
seed layer 500 as an electric feed layer is formed on the surface of a substrate. A resist 502 having a height H of e.g. 20-120 μm is applied over the entire surface of theseed layer 500. Subsequently, an opening 502 a having a diameter D of e.g. 20-200 μm is formed at a prescribed position in the resist 502. Such a substrate W is inserted in thecassette 10 described above with the surface (processing surface to be plated) facing upward. Thecassette 10 is loaded onto the cassette table 12. - The
substrate transferring device 22 takes out one substrate from thecassette 10 on the cassette table 12 and places the substrate on thealigner 14. Thealigner 14 aligns the orientation flat or notch or the like in the prescribed orientation. Next, thesubstrate transferring device 22 transfers the aligned substrate W to the substrate loading/unloading unit 20. - In the substrate loading/
unloading unit 20, twosubstrate holders 18 accommodated in thestocker 24 are gripped by the grippingmechanisms 108 of thetransporter 42 of the substrateholder transferring device 40 simultaneously. After the arm raising/lowering mechanism 104 raises thearm 102, thearm 102 is moved to the substrate loading/unloading unit 20. The armrotating mechanism 106 rotates thearm 102 at 90° to hold thesubstrate holders 18 in a horizontal state. Subsequently, the arm raising/lowering mechanism 104 lowers thearm 102, placing bothsubstrate holders 18 on theloading plate 52 simultaneously. The cylinders are operated to open the moveable supportingmembers 58 of thesubstrate holders 18. - While the moveable supporting
members 58 are open, thesubstrate transferring device 22 inserts the substrate into one of thesubstrate holders 18 positioned in the center of the substrate loading/unloading unit 20. The cylinder performs a reverse operation to close the moveable supportingmember 58. Subsequently, the moveable supportingmember 58 is locked by the locking/unlocking mechanism. After one substrate W is loaded into onesubstrate holder 18, theloading plate 52 is slid horizontally to load another substrate in theother substrate holder 18. Subsequently, theloading plate 52 is returned to its original position. - Thus, each of the surface of the substrate to be plated is exposed in the opening portion of the
substrate holder 18. The seal packing 60 seals the peripheral portion of the substrates W to prevent the plating liquid from entering thereinto. Electricity is continued through the plurality of contact points in areas not in contact with the plating liquid. Wiring is connected from the contact points to thehands 76 of thesubstrate holder 18. By connecting a power source to thehands 76, electricity can be supplied to theseed layer 500 formed on the substrate. - Next, the gripping
mechanisms 108 of thetransporter 42 of the substrateholder transferring device 40 grip both of thesubstrate holders 18 holding the substrate simultaneously, and the arm raising/lowering mechanism 104 raises thearm 102. After transferring thesubstrate holders 18 to thestocker 24, the armrotating mechanism 106 rotates thearm 102 by 90°, such that thesubstrate holders 18 are positioned vertically. The arm raising/lowering mechanism 104 lowers thearm 102, thereby suspending (temporarily placement) the twosubstrate holders 18 in thestocker 24. - The above process performed by the
substrate transferring device 22, the substrate loading/unloading unit 20, and thetransporter 42 of the substrateholder transferring device 40 is repeated in order to load substrate W one after another into thesubstrate holder 18 accommodated in thestocker 24 and suspend (temporarily placement) thesubstrate holder 18 one after another at prescribed positions in thestocker 24. - When the sensor mounted on the
substrate holder 18 for checking the contact state between the substrate and the contact points determines a poor contact, the sensor inputs the signal into a controller (not shown). - Meanwhile, the gripping
mechanisms 108 of theother transporter 44 of thesubstrate transferring device 40 simultaneously grip twosubstrate holders 18 that have been holding the substrates and temporarily placed in thestocker 24. The arm raising/lowering mechanism 104 of thetransporter 44 raises thearm 102 and thetransporter 44 transfers thesubstrate holders 18 to thepre-wetting tank 26. The arm raising/lowering mechanism 104 lowers thearm 102, thereby immersing the bothsubstrate holders 18 into pure water, for example, held in thepre-wetting tank 26. The pure water wets the surfaces of the substrates W to create a more hydrophilic surface. Obviously, an aqueous liquid other than pure water can be used, providing the liquid can improve the hydrophilic property of the substrate by wetting the surface of the substrate and replacing the bubbles in the holes with water. - However, if the sensor mounted on the
substrate holder 18 for checking the contact state between the substrate and contact points has detected a poor contact state, thesubstrate holder 18 holding the substrate having the poor contact is left stored in thestocker 24. Accordingly, when a poor contact between a substrate and the contact points of thesubstrate holder 18 occurs, it does not halt the apparatus, but allows plating operations to continue. The substrate with a poor contact does not apply to the plating process. Instead the substrate is returned to the cassette and discharged from the cassette. - Next, the
substrate holders 18 holding the substrates are transferred in the same way as described above to thepre-soaking tank 28 and the substrates are immersed into a chemical liquid such as sulfuric acid or hydrochloric acid held in thepre-soaking tank 28. The chemical liquid etches an oxide layer having a high electrical resistance that is formed on the surface of the seed layer and exposes a clean metal surface. Next, thesubstrate holders 18 holding the substrates are transferred in the same way to thecleaning tank 30 a, wherein the surfaces of the substrates are cleaned by pure water held therein. - After the cleaning process, the
substrate holders 18 holding the substrates are transferred in the same way as described above to thecopper plating tank 34, which is filled with a plating liquid, and suspended in theplating units 38. Thetransporter 44 of the substrateholder transferring device 40 repeatedly performs this operation of transferring thesubstrate holder 18 to theplating unit 38 and suspending thesubstrate holder 18 at a prescribed position therein. - When the all
substrate holders 18 are suspended in theplating units 38, plating liquid is supplied through the platingliquid supply pipes 206. While the plating liquid overflows into theoverflow tank 36, plating voltages are applied between theanodes 200 and the substrates. At the same time, thepaddle driving units 46 reciprocate thepaddles 202 in a direction parallel to the surfaces of the substrates, thereby plating the surfaces of the substrates. At this time, each of thesubstrate holders 18 is fixed in a suspended state by thehands 76 at the top of theplating unit 38. Electricity is supplied from a plating power source to the seed layer on the substrate via the hand fixed portion, the hand, and the contact points. - The plating liquid is injected into the plating
units 38 through the bottom thereof and overflows into the top of the walls around theplating units 38. The overflowed plating liquid is regulated of its concentration, and removed of foreign body by the filter before being reintroduced into the platingunits 38 from the lower portion of theplating units 38. With this circulation process, the concentration of the plating liquid is maintained at a constant level. The plating liquid can be maintained at an even more uniform state by applying a dummy electrolytic voltage between thecathode 184 and theanode 186 for dummy plating. - After completion of the plating process, the application of plating voltages, supply of plating liquid, and reciprocation of the paddles are all stopped. The
gripping mechanisms 108 of thetransporter 44 of the substrateholder transferring device 40 grip two of thesubstrate holders 18 holding the substrates simultaneously, and transfer thesubstrate holders 18 to thecleaning tank 30 b, as described above. Thesubstrate holders 18 are immersed in pure water held in thecleaning tank 30 b to clean the surfaces of the substrates W. Subsequently, thesubstrate holders 18 are transferred as described above to theblowing tank 32, where air is blown onto thesubstrate holders 18 holding the substrates to remove water droplets deposited thereon. Next, thesubstrate holders 18 are returned and suspended at prescribed positions in thestocker 24, as described above. - The above operation of the
transporter 44 of the substrateholder transferring device 40 is repeatedly conducted. After each substrate W has applied to the complete plating process, thesubstrate holders 18 are returned to the prescribed suspended position in thestocker 24. - Meanwhile, the gripping
mechanisms 108 of thetransporter 42 of the substrateholder transferring device 40 simultaneously grip two of thesubstrate holders 18 holding the substrates that have been returned to thestocker 24 after the plating process, and place thesubstrate holders 18 on theloading plate 52 of the substrate loading/unloading unit 20, as described above. At this time, a substrate for which a poor connection was detected by the sensor mounted on thesubstrate holders 18 for checking contact state between the substrate and contact points and which was left in thestocker 24 is also transferred to theloading plate 52. - Next, the moveable supporting
member 58 in thesubstrate holder 18 positioned at the center of the substrate loading/unloading unit 20 is unlocked by the locking/unlocking mechanism. The cylinder is operated to open the moveable supportingmember 58. In this state, thesubstrate transferring device 22 takes the plating processed substrate out of thesubstrate holder 18 and transfers the substrate to thespin dryer 16. Thespin dryer 16 spins the substrate at a high rotation speed for spin drying (draining). Thesubstrate transferring device 22 then transfers the substrate back to thecassette 10. - After the substrate is returned to the
cassette 10, or during this process, theloading plate 52 is slid laterally, and the same process is performed for the substrate mounted in theother substrate holder 18 so that the substrate is spin-dried and returned to thecassette 10. - The
loading plate 52 is returned to its original position. Next, the grippingmechanisms 108 of thetransporter 42 grip twosubstrate holders 18 which now contain no substrate, at the same time, and return thesubstrate holders 18 to the prescribed position in thestocker 24, as described above. Subsequently, the grippingmechanisms 108 of thetransporter 42 of the substrateholder transferring device 40 grip two of thesubstrate holders 18 holding the substrates that have been returned to thestocker 24 after the plating process, and transfers thesubstrate holders 18 onto theloading plate 52, as described above. The same process is repeated. - The process is completed when all substrates have been taken out of the substrate holders, which have been holding substrates after the plating process and returned to the
stocker 24, spin-dried and returned to thecassette 10. This process provides substrates W that have a platedfilm 504 grown in theopening 502 a formed in the resist 502, as shown in FIG. 29B. - In a plating apparatus having a resist peeling
unit 600, seedlayer removing unit 602, andheating unit 604, as shown in FIG. 3B, the substrate W is spin dried, as described above, and transferred to the resist peelingunit 600. Here, the substrate W is immersed in a solvent, such as acetone, that is maintained at a temperature of 50-60° C., for example. In this process, the resist 502 is peeled off from the surface of the substrate W, as shown in FIG. 29C. Next, the substrate W is transferred to the seedlayer removing unit 602 where theunnecessary seed layer 500 exposed after the plating process is removed, as shown in FIG. 29D. Next, the substrate W is transferred to theheating unit 604 comprising e.g. a diffusion furnace, and the platedfilm 504 is caused to reflow for thereby forming thebump 506 having a spherical shape due to surface tension as shown in FIG. 29E. Further, the substrate W is annealed at a temperature of, for example, 100° C. or higher, thereby removing residual stress in thebump 506. This annealing process helps to form an alloy in thebump 506 when forming a bump by multi-layer plating, as described below. After the annealing process, the substrate W is returned to thecassette 10 to complete the process. - Further, as shown in FIG. 3C, in the plating apparatus having a
reflowing unit 606 and anannealing unit 608 in place of theheating unit 604, the platedfilm 504 is caused to reflow in thereflowing unit 606, and then the substrate is transferred to theannealing unit 608 and annealed therein. - In this example, the
stocker 24 for accommodating thesubstrate holders 18 in a vertical position is provided between the substrate loading/unloading unit 20 andplating units 38. Thefirst transporter 42 of the substrateholder transferring device 40 transfers thesubstrate holders 18 between the substrate loading/unloading unit 20 andstocker 24, and thesecond transporter 44 of the substrateholder transferring device 40 transfers thesubstrate holders 18 between thestocker 24 andplating units 38, respectively.Unused substrate holders 18 are stored in thestocker 24. This is designed to improve throughput by providing smooth transferring of thesubstrate holders 18 on either side of thestocker 24. However, it is of course possible to use one transporter to perform all transferring operations. - Further, a robot having a dry hand and a wet hand may be employed as the
substrate transferring device 22. The wet hand is used only when taking out plating-processed substrates from thesubstrate holders 18. The dry hand is used for all other operations. In principle, the wet hand is not necessarily required since the backside of the substrate does not contact with plating liquid due to the seal of thesubstrate holder 18. However, by using the two hands in this manner, it is possible to prevent a possible contamination with a plating liquid due to poor sealing or transferring to the backside of a rinse water, etc. from contaminating the backside of a new substrate. - Further, a bar code may be attached to the
cassette 10. By inputting information such as the usage state of thesubstrate holder 18 such as storage position of thesubstrate holder 18 in thestocker 24, the relationship between thecassette 10 and the substrate W housed in thecassette 10, or the relationship between thesubstrate holder 18 and the substrate W taken out of thesubstrate holder 18 from a control panel or the like, the substrate taken out of thecassette 10 before a plating process can be returned to thesame cassette 10 after the plating process, and the processing state of the substrate W and the state of thesubstrate holder 18 can be monitored. Alternatively, by attaching a bar code to the substrate, the substrate itself may be managed. - FIGS. 22A and 23 show a plating apparatus according to a fourth embodiment of the present invention. This apparatus is provided with plating tanks for performing different types of plating processes and adapted to various processes freely.
- FIG. 22A shows a plating section provided with plating tanks for performing various types of plating processes. The plating section includes the
stocker 24; atemporary storing platform 240; thepre-wetting tank 26; thepre-soaking tank 28; thefirst cleaning tank 30 a; anickel plating tank 244 having anoverflow tank 36 a and a plurality ofnickel plating units 242 disposed in theoverflow tank 36 a for performing nickel plating on the surface of a substrate; thesecond cleaning tank 30 b; thecopper plating tank 34 having theoverflow tank 36 and a plurality of thecopper plating units 38 disposed in theoverflow tank 36 for performing copper plating on the surface of a substrate; thethird cleaning tank 30 c; theblowing tank 32; thefourth cleaning tank 30 d; and asolder plating tank 248 having anoverflow tank 36 b and a plurality ofsolder plating units 246 disposed in theoverflow tank 36 b for performing solder plating on the surface of a substrate. - The constructions of the
nickel plating units 242 and thesolder plating units 246 are essentially the same as that of thecopper plating units 38. Further, the constructions of thenickel plating tank 244 andsolder plating tank 248 accommodating the respective units in the respective overflow tanks have essentially the same construction as thecopper plating tank 34. All other constructions are the same as these described in the first embodiment. - In this embodiment, the substrate mounted in the
substrate holder 18 applied to nickel plating, copper plating, and solder plating in order on its surface. Thus, this apparatus can perform a series of operations to form bump electrodes and the like with multiple plating: nickel, copper, and solder. - In this example, the plating apparatus includes four
nickel plating units 242, fourcopper plating units 38, and fourteen solder plating units 246 (22 plating units in total). However, as shown in FIG. 22B, for example, the apparatus can comprise fournickel plating units 242, fourcopper plating units 38, and eighteen solder plating units 246 (26 plating units in total). Of course, the number of each type of plating units can be set arbitrarily. Also, the kind of metal to be plated in each unit can also be varied. - In addition to the Ni—Cu-solder multi-layer bumps, other types of multi-layer bumps that can be formed include Cu—Au-solder, Cu—Ni-solder, Cu—Ni—Au, Cu—Sn, Cu—Pd, Cu—Ni—Pd—Au, Cu—Ni—Pd, Ni-solder, and Ni—Au etc. The type of solder used here can be either a high melting point solder or a eutectic solder.
- Further, bumps composed of multi-layers of Sn—Ag or Sn—Ag—Cu can be formed as alloys by performing the annealing process described above. Unlike the conventional Sn—Pb solder, Pb-free solder resolves the environmental problem of generating alpha rays.
- In this embodiment, a
local exhaust duct 250 is disposed alongside the substrateholder transferring device 40 and parallel therewith, as shown in FIG. 23, and a plurality ofduct holes 252 are formed in communication with thelocal exhaust duct 250. The duct holes 252 are designed to suck air toward thelocal exhaust duct 250 to generate an air flow in a single direction from the bottom of each plating tank toward the ceiling. With this configuration, a vapor emitted from each plating tank is carried by this air flow in a single direction toward thelocal exhaust duct 250, thereby preventing the vapor from contaminating the substrate, etc. - According to the plating apparatus in this embodiment, by loading cassettes housing substrates onto the cassette table and starting the apparatus, it is possible to completely automate the electrolytic plating process by the dipping method to automatically form an appropriate plated metal layer for bump electrodes and the like on the surfaces of the substrates.
- In this embodiments described above, the substrate holder holds the substrate while sealing the peripheral edges and backside thereof. The substrate and substrate holder are transferred together to apply to each process. However, the substrates can also be accommodated in a rack-like transferring device for transferring the substrates. In this case, a thermally oxidized layer (Si oxide layer), an adhesive tape film, or the like can be applied to the backside of the substrates to prevent the same from being plated.
- Further according to the embodiments described above, the automatic electrolytic plating process using the dipping method is performed to form bumps on the substrate. However, such bumps can also be formed by a fully automated electrolytic plating process of a jet type or cup type in which a plating liquid is spurted from below.
- FIG. 24 shows the main portion of the plating section of a plating apparatus according to a fifth embodiment. Here, a plating section including a plurality of jet or cup
type plating units 700 are arranged downstream of thecleaning tank 30 d shown in FIG. 22A, for example. The platingunits 700 perform a plating process such as copper plating. - FIG. 25 shows the
plating unit 700 shown in FIG. 24. Theplating unit 700 has aplating tank body 702 which houses therein asubstrate holder 704 for holding a substrate W. Thesubstrate holder 704 has asubstrate holding case 706 and arotatable shaft 708 that is rotatably supported by an inner surface ofcylindrical guide member 710 throughbearings guide member 710 and thesubstrate holder 704 are vertically movable with a predetermined stroke by acylinder 714 provided at the top of theplating tank body 702. - The
substrate holder 704 is allowed to rotate in the direction of arrow A through therotating shaft 708 by amotor 715 provided at an upper position in theguide member 710. Thesubstrate holder 704 has a space C therein which accommodates asubstrate presser 720 that comprises asubstrate presser plate 716 and asubstrate presser shaft 718. Thesubstrate presser 720 is vertically movable with a predetermined stroke by acylinder 722 provided at an upper position within theshaft 708. - The
substrate holding case 706 of thesubstrate holder 704 has abottom opening 706 a which communicates with the space C. Thesubstrate holding case 706 has a step extending around an upper portion of thebottom opening 706 a for placing the outer circumferential edge of the substrate W thereon. When the outer circumferential edge of the substrate W is placed on the step and the upper surface of the substrate W is pressed by thesubstrate presser plate 716, the outer circumferential edge of the substrate W is sandwiched between thesubstrate presser plate 716 and the step. The lower surface (plating surface) of the substrate W is exposed in thebottom opening 706 a. - A
plating chamber 724 is disposed below thesubstrate holder 704 in theplating tank body 702, i.e., below the plating surface of the substrate W that is exposed in thelower opening 706 a. A plating liquid Q is ejected from a plurality of platingliquid injection pipes 726 toward the center of theplating chamber 724. Theplating chamber 724 is surrounded by a collectinggutter 728 for collecting the plating liquid Q that has overflowed theplating chamber 724. - The plating liquid Q collected in the collecting
gutter 728 is returned to a platingliquid storage tank 730. The plating liquid Q in the platingliquid storage tank 730 is delivered by apump 732 horizontally from outwardly of theplating chamber 724 therein. The plating liquid Q thus introduced into theplating chamber 724 is turned into a uniform vertical flow toward the plating surface of the substrate W when the substrate W is rotated and contacts with the surface of the substrate. The plating liquid Q that has overflowed theplating chamber 724 is collected in the collectinggutter 728, from which the plating liquid Q flows into the platingliquid storage tank 730. The plating liquid Q thus circulates between theplating chamber 724 and the platingliquid storage tank 730. - The level LQ of the plating liquid in the
plating chamber 724 is higher than the level LW of the plating surface of the substrate W by a small distance ΔL. Therefore, the entire plating surface of the substrate W is contacted with the plating liquid Electrical contacts for electrically continuing with the conductor portion of the substrate W are provided in the step of thesubstrate holding case 706. The electrical contacts are connected to the negative electrode of an external plating power source (not shown) through a brush. Ananode plate 736 connected to the positive electrode of the plating power (not shown) source is provided in the bottom of theplating chamber 724 facing to the substrate W. Thesubstrate holding case 706 has asubstrate takeout opening 706 c defined in the sidewall thereof for inserting into and taking out the substrate therethrough by a substrate loading and unloading member such as a robot arm. - The
plating unit 700 operates as follows: Thecylinder 714 is operated to lift thesubstrate holder 704 together with theguide member 710 by a predetermined distance, and thecylinder 722 is operated to lift thesubstrate presser 720 by a predetermined distance to a position where thesubstrate presser plate 716 is located above thesubstrate takeout opening 706 c. The substrate loading and unloading member such as a robot arm is then actuated to introduce the substrate W through theopening 706 c into the space C in thesubstrate holder 704, and place the substrate W on the step such that the plating surface of the substrate W faces downward. Thecylinder 722 is operated to lower thesubstrate presser plate 716 until its lower surface touches the upper surface of the substrate W, thereby sandwiching the outer circumferential edge of the substrate W between thesubstrate presser plate 716 and the step. - The
cylinder 714 is operated to lower thesubstrate holder 704 together with theguide member 710 until the plating surface of the substrate W contacts the plating liquid Q (i.e. to the position that is lower than the level LQ of the plating liquid Q by the distance ΔL). At this time, themotor 715 is energized to rotate thesubstrate holder 704 and the substrate W at a low speed while they are being lowered. Theplating chamber 724 is filled with the plating liquid Q. When a predetermined voltage is applied between theanode plate 736 and the electric contacts from the plating power source, a plating electric current flows from theanode plate 736 to the substrate W, forming a plated film on the plating surface of the substrate W. - During the plating process, the
motor 715 is continuously energized to rotate thesubstrate holder 704 and the substrate W at a low speed. The speed is selected so as to form a plated film of uniform thickness on the plating surface of the substrate W without disturbing the vertical flow of the plating liquid in theplating chamber 724. - After the plating process is finished, the
cylinder 714 is operated to lift thesubstrate holder 704 and the substrate W. When the lower surface of thesubstrate holding case 706 reaches a position higher than the level LQ of the plating liquid, themotor 715 is energized to rotate at a higher speed to drain off the plating liquid from the plated surface of the substrate W and from the lower surface of thesubstrate holding case 706 by the action of centrifugal force. Thereafter, thecylinder 722 is operated to lift thesubstrate presser plate 716 to release the substrate W, which remains placed on the step of thesubstrate holding case 706. Then, the substrate loading and unloading member such as a robot arm is introduced through thesubstrate takeout opening 706 c into the space C in thesubstrate holder 704, holds the substrate W. and carries the substrate W through theopening 706 c out of thesubstrate holder 704. - The above example employs the face-down method of plating with the
plating unit 700. However, it is also possible to employ a face-up type plating process, as shown in FIG. 26. - FIG. 26 shows an example of a
plating unit 800 to perform a face-up plating process. Theplating unit 800 is provided with asubstrate holder 802 capable of moving up and down that holds the substrate W with the surface to be plated facing upward and anelectrode head 804 positioned above thesubstrate holder 802. Theelectrode head 804 is in a cup shape with an open bottom and provided with a platingliquid supply inlet 806 at the upper surface which is connected to a plating liquid supply tube (not shown) and ananode 808 disposed at the bottom opening of theelectrode head 804 and formed of, for example, a porous material or of a plate having a plurality of through-holes. - A substantially cylindrical sealing
member 810 is provided below theelectrode head 804. The top of the sealingmember 810 surrounds the lower periphery of theelectrode head 804, while the diameter of the cylinder decreases toward the bottom. A plurality of electrical contact points 812 are disposed outside of the sealingmember 810. When thesubstrate holder 802 holding the substrate is raised, the edge portion of the substrate W contacts the sealingmember 810, forming aplating chamber 814 between the sealingmember 810 and the substrate W. At the same time, the edge portion of the substrate W contacts the electrical contact points 812 outside the contacting portion with the sealingmember 810, making the substrate W function as a cathode. - In this embodiment, the
substrate holder 802 holding a substrate W is raised to make the edge portion of the substrate W contact the sealingmaterial 810, thereby forming theplating chamber 814 and allowing the substrate W to function as a cathode. In this state, a plating liquid is supplied into theelectrode head 804 via thesupply inlet 806 of theelectrode head 804 and introduced through theanode 808 into theplating chamber 814, thereby immersing theanode 808 and the surface of the substrate W, serving as the cathode, in the plating liquid. Next, the plating process can be performed on the surface of the substrate W by applying a prescribed voltage from a plating power source between theanode 808 and the substrate W. - FIG. 27 shows the main portion of the plating section of a plating apparatus according to a sixth embodiment of the present invention. The plating section of this plating apparatus includes a plurality of plating
units 900 which are capable of opening and closing, and arranged downstream of thecleaning tank 30 d shown in FIG. 24, for example, and on two sides. Asubstrate transferring device 904 comprising a robot or the like can move along thecentral transferring path 902. In this embodiment, a substrate W is transferred between a substrate holding table 950 housed in theplating unit 900 and thesubstrate transferring device 904. After the substrate holding table 950 receives a substrate W from thesubstrate transferring device 904, theplating unit 900 performs a plating process on the surface of the substrate W. - FIG. 28 shows an example of the
plating unit 900 shown in FIG. 27. Theplating unit 900 is provided with aplating tank body 911 and aside plate 912. Theside plate 912 is disposed facing to theplating tank body 911, and a depression A is formed in the surface of theplating tank body 911 facing theside plate 912. By a hinge mechanism disposed at the bottom of theside plate 912, theside plate 912 can open and close the depression A formed in theplating tank body 911. - An
insoluble anode plate 913 is disposed on a bottom surface of abottom member 911 a of theplating tank body 911 at the depression A. The substrate W is mounted on the surface of theside plate 912 facing theplating tank body 911. With this construction, when theside plate 912 is closed over the depression A of theplating tank body 911, theanode plate 913 and substrate W come to be positioned facing each other at a prescribed distance. A neutral porous diaphragm or acation exchange membrane 914 is mounted on theplating tank body 911 and positioned between theanode plate 913 and the substrate W. The neutral porous diaphragm orcation exchange membrane 914 divides the depression A in theplating tank body 911 into ananode chamber 915 and acathode chamber 916. - A
top header 918 and abottom header 919 are provided on the top and bottom of theplating tank body 911, respectively. Acavity 918 a of thetop header 918 and acavity 919 a of thebottom header 919 are in communication with thecathode chamber 916, respectively. Aninlet 911 b communicating with theanode chamber 915 is provided at the bottom thereof, and anoverflow outlet 911 c communicating with theanode chamber 915 is provided at the top thereof. Anoverflow chamber 920 is provided adjacent to theoverflow outlet 911 c and at the side of theplating tank body 911. - A plating liquid held in a
plating liquid tank 921 is supplied by apump 922 to thecavity 919 a of thebottom header 919 through apipe 923, fills thecathode chamber 916, passes thecavity 918 a at the top of theplating tank body 911, and returns to theplating liquid tank 921 through apipe 924. An plating liquid held in ananode solution tank 925 is supplied by apump 926 to theanode chamber 915 through apipe 927, fills theanode chamber 915, overflows theoverflow outlet 911 c and flows into theoverflow chamber 920. After being stored temporarily in theoverflow chamber 920, the plating liquid is returned to theanode solution tank 925 through adischarge outlet 920 a and apipe 928. - Here, the
cathode chamber 916 is hermetically sealed, while the top of theanode chamber 915 is open to the air. - An
annular packing 929 is provided around the outer periphery of the depression A formed in theplating tank body 911. When theside plate 912 closes the depression A, theannular packing 929 contacts the peripheral surface of the substrate W to hermetically seal thecathode chamber 916. Anexternal anode terminals 930 are provided outside of theannular packing 929. When theside plate 912 closes the depression A, the end of theexternal anode terminals 930 contact the conducting portion of the substrate W, thereby conducting electricity to the substrate W. Further, theannular packing 929 prevents theexternal anode terminals 930 from contacting the plating liquid. Aplating power source 931 is connected between theanode terminals 930 andexternal anode plate 913. - In the
plating unit 900 described above, the plating liquid is filled into and circulated to thecathode chamber 916, while another plating liquid is filled into and, while being left overflowing, circulated to theanode chamber 915. A plated film is formed on the surface of the substrate W by supplying an electric current from theplating power source 931 between theinsoluble anode plate 913 and the substrate W, serving as a cathode. - In this embodiment, the
anode chamber 915 and thecathode chamber 916 are partitioned, and the plating liquid is separately introduced in the respective chambers. However, theanode chamber 915 and thecathode chamber 916 may be integrated into a single chamber without providing a neutral membrane or a cation exchange membrane. Further, as theanode plate 913, a soluble anode plate may also be used. - Further, in another embodiment, the substrate holding table950 in the
plating unit 900 may serve also as theside plate 912. In this case, the substrate holding table 950 which has received the substrate W from thesubstrate transferring device 904 can move to close the depression A of theplating tank body 911. The other construction of the substrate holding table 950 is the same as in the above embodiment.
Claims (71)
1. A plating apparatus, comprising:
a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed;
a plating tank for holding a plating liquid in which an anode is immersed;
a diaphragm provided in said plating tank and disposed between said anode and the substrate held by said substrate holder;
plating liquid circulating systems for circulating the plating liquid through the respective regions of said plating tank partitioned by said diaphragm; and
a deaerating unit provided in at least one of said plating liquid circulating systems.
2. The plating apparatus according to claim 1 , further comprising a monitoring unit disposed downstream of said deaerating unit for monitoring the concentration of dissolved oxygen in the plating liquid.
3. The plating apparatus according to claim 1 , wherein said deaerating unit comprises at least a deaerating membrane and a vacuum pump, the pressure on the decompressed side of said deaerating unit being controlled.
4. The plating apparatus according to claim 3 , further comprising a monitoring unit disposed downstream of said deaerating unit for monitoring the concentration of dissolved oxygen in the plating liquid.
5. A plating method, comprising;
providing a diaphragm between a substrate and an anode immersed in a plating liquid held in a plating tank;
circulating the plating liquid in each region of said plating tank partitioned by said diaphragm; and
plating the substrate while maintaining the concentration of dissolved oxygen in the plating liquid between 1 μg/l (1 ppb) and 4 mg/l (4 ppm) by a deaerating unit.
6. A plating apparatus, comprising:
a cassette table for loading a cassette housing a substrate therein;
a substrate holder capable of opening and closing for holding the substrate such that the front surface of the substrate is exposed while the back side and the edge thereof are hermetically sealed;
a substrate loading/unloading unit for supporting said substrate holder, and loading and unloading the substrate;
a substrate transferring device for transferring the substrate between said cassette table and said substrate loading/unloading unit;
a plating tank for accommodating said substrate holder and the substrate held vertically and facing to an anode, and plating the surface of the substrate by injecting a plating liquid from the bottom thereof; and
a substrate holder transferring device having a transporter that grips the substrate holder and is vertically moveable, and transfers said substrate holder between said substrate loading/unloading unit and said plating tank.
7. The plating apparatus according to claim 6 , wherein said plating tank comprises a plurality of plating units accommodated in an overflow tank that accommodates dummy electrodes for dummy plating, each unit being adapted for accommodating and plating one substrate.
8. The plating apparatus according to claim 7 , wherein each plating unit is provided with a paddle that is disposed between said anode and the substrate, and reciprocates to agitate the plating liquid.
9. The plating apparatus according to claim 8 , wherein a paddle drive device for driving said paddle is provided on the opposite side of said substrate holder transferring device with respect to said the plating tank.
10. The plating apparatus according to claim 6 , comprising plating tanks for performing different types of plating, wherein each plating tank comprises an overflow tank and plating units for performing each type of plating, said plating units being accommodated in said overflow tank.
11. The plating apparatus according to claim 10 , wherein each plating unit is provided with a paddle that is disposed between said anode and the substrate, and reciprocates to agitate the plating liquid.
12. The plating apparatus according to claim 11 , wherein a paddle drive device for driving said paddle is provided on the opposite side of said substrate holder transferring device with respect to said the plating tank.
13. The plating apparatus according to claim 6 , wherein a local exhaust duct is provided along one side of said plating tank.
14. The plating apparatus according to claim 6 , wherein a stocker for storing said substrate holder in a vertical position is provided between said substrate loading/unloading unit and said plating tank; and said substrate holder transferring device has first and second transporters.
15. The plating apparatus according to claim 14 , wherein said substrate loading/unloading unit is provided with a sensor for checking the contact state between the substrate and contact points when the substrate is loaded into said substrate holder; and said second transporter selectively transfers only such substrate that has a good contact with the contact points to a subsequent process.
16. The plating apparatus according to claim 14 , wherein said substrate holder transferring device employs a linear motor as a means for moving said transporters.
17. The plating apparatus according to claim 14 , further comprising a pre-wetting tank, a blowing tank, and a cleaning tank between said stocker and said plating tank.
18. The plating apparatus according to claim 17 , wherein said substrate loading/unloading unit is provided with a sensor for checking the contact state between the substrate and contact points when the substrate is loaded into said substrate holder; and said second transporter selectively transfers only such substrate that has a good contact with the contact points to a subsequent process.
19. The plating apparatus according to claim 17 , wherein said substrate holder transferring device employs a linear motor as a means for moving said transporters.
20. The plating apparatus according to claim 6 , wherein said substrate loading/unloading unit is constructed to support two substrate holders side by side that are slidable laterally.
21. A plating apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
a cassette table for loading a cassette housing the substrate therein;
a plating tank for plating the substrate;
a cleaning unit for cleaning the plated substrate;
a drying unit for drying the cleaned substrate;
a deaerating unit for deaerating a plating liquid in the plating tank;
a plating liquid regulating unit for analyzing the components of the plating liquid and adding components to the plating liquid based on the results of the analysis; and
a substrate transferring device for transferring the substrate.
22. The plating apparatus according to claim 21 , wherein at least part of said substrate transferring device transfers the substrate by means of a linear motor.
23. The plating apparatus according to claim 21 , wherein said plating liquid regulating unit adds components to the plating liquid by both a feedforward control method and a feedback control method.
24. The plating apparatus according to claim 21 , wherein said plating tank is adapted to plat the substrate such that the substrate is oriented vertically or slightly inclined.
25. The plating apparatus according to claim 24 , wherein the plating liquid is allowed to flow in said plating tank in a direction substantially parallel to the surface of the substrate held in said plating tank.
26. The plating apparatus according to claim 21 , wherein the substrate is applied to plating, cleaning and drying processes while being held by said substrate holder.
27. The plating apparatus according to claim 26 , further comprising a drying unit for drying the plated substrate taken out of said substrate holder.
28. The plating apparatus according to claim 21 , wherein said cleaning unit and said drying unit are integrally constructed.
29. The plating apparatus according to claim 21 , wherein said plating tank comprises a plurality of plating units accommodated in an overflow tank, each unit being adapted for accommodating and plating one substrate.
30. The plating apparatus according to claim 21 , wherein a conductor for energizing the substrate to make it a cathode and a metal contact are made of stainless steel, or at least those surfaces of said conductor and said metal contact which contact with each other or another member are coated with gold or platinum.
31. The plating apparatus according to claim 21 , wherein a regulation plate is disposed between the substrate, serving as a cathode, and an anode facing to the substrate, in said plating tank.
32. The plating apparatus according to claim 21 , further comprising a sensor for checking the contact state between the substrate and electrical contact points for energizing the substrate to make it a cathode.
33. The plating apparatus according to claim 21 , wherein said plating liquid regulating unit is provided in a housing that accommodates said cassette table, said plating tank, said cleaning unit, said drying unit, said deaerating unit, and said substrate transferring device.
34. The plating apparatus according to claim 21 , wherein said plating liquid regulating unit is provided outside a housing that accommodates said cassette table, said plating tank, said cleaning unit, said drying unit, said deaerating unit, and said substrate transferring device.
35. A plating apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
a cassette table for loading a cassette housing the substrate therein;
a pre-wetting tank for applying a pre-wetting treatment to the substrate to increase the wettability thereof;
a plating tank for plating the substrate after the pre-wetting treatment;
a cleaning unit for cleaning the plated substrate;
a drying unit for drying the cleaned substrate;
a deaerating unit for deaerating a plating liquid in the plating tank; and
a substrate transferring device for transferring the substrate.
36. The plating apparatus according to claim 35 , wherein at least part of said substrate transferring device transfers the substrate by means of a linear motor.
37. The plating apparatus according to claim 35 , wherein said plating tank is adapted to plat the substrate such that the substrate is oriented vertically or slightly inclined.
38. The plating apparatus according to claim 37 , wherein the plating liquid is allowed to flow in said plating tank in a direction substantially parallel to the surface of the substrate held in said plating tank.
39. The plating apparatus according to claim 35 , wherein the substrate is applied to pre-wetting, plating, cleaning and drying processes while being held by the substrate holder.
40. The plating apparatus according to claim 39 , further comprising a drying unit for drying the plated substrate taken out of said substrate holder.
41. The plating apparatus according to claim 35 , wherein said cleaning unit and said drying unit are integrally constructed.
42. The plating apparatus according to claim 35 , wherein said plating tank comprises a plurality of plating units accommodated in an overflow tank, each unit being adapted for accommodating and plating one substrate.
43. The plating apparatus according to claim 35 , wherein a conductor for energizing the substrate to make it a cathode and a metal contact are made of stainless steel, or at least those surfaces of said conductor and said metal contact which contact with each other or another member are coated with gold or platinum.
44. The plating apparatus according to claim 35 , wherein a regulation plate is disposed between the substrate, serving as a cathode, and an anode facing to the substrate, in said plating tank.
45. The plating apparatus according to claim 35 , further comprising a sensor for checking the contact state between the substrate and electrical contact points for energizing the substrate to make it a cathode.
46. An apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
a cassette table for loading a cassette housing the substrate therein;
a pre-soaking tank for applying a pre-soaking treatment to the substrate;
a plating tank for plating the substrate after the pre-soaking treatment;
a cleaning unit for cleaning the plated substrate;
a drying unit for drying the cleaned substrates;
a deaerating unit for deaerating the plating liquid in the plating tank; and
a substrate transferring device for transferring the substrates.
47. The plating apparatus according to claim 46 , wherein at least part of said substrate transferring device transfers the substrate by means of a linear motor.
48. The plating apparatus according to claim 46 , wherein said plating tank is adapted to plat the substrate such that the substrate is oriented vertically or slightly inclined.
49. The plating apparatus according to claim 46 , wherein the plating liquid is allowed to flow in said plating tank in a direction substantially parallel to the surface of the substrate while being held in said plating tank.
50. The plating apparatus according to claim 46 , wherein the substrate is applied to pre-soaking, plating, cleaning and drying processes while being held by the substrate holder.
51. The plating apparatus according to claim 46 , further comprising a drying unit for drying the plated substrate taken out of said substrate holder.
52. The plating apparatus according to claim 46 , wherein said cleaning unit and said drying unit are integrally constructed.
53. The plating apparatus according to claim 46 , wherein said plating tank comprises a plurality of plating units accommodated in an overflow tank, each unit being adapted for accommodating and plating one substrate.
54. The plating apparatus according to claim 46 , wherein a conductor for energizing the substrate to make it a cathode and a metal contact are made of stainless steel, or at least those surfaces of said conductor and said metal contact which contact with each other or another member are coated with gold or platinum.
55. The plating apparatus according to claim 46 , wherein a regulation plate is disposed between the substrate, serving as a cathode, and an anode facing to the substrate, in said plating tank.
56. The plating apparatus according to claim 46 , further comprising a sensor for checking the contact state between the substrate and electrical contact points for energizing the substrate to make it a cathode.
57. An apparatus for forming a protruding electrode on a substrate by plating the substrate with at least two kinds of metals, comprising:
a plurality of plating tanks each for plating the substrate with each of the above metals; and
a substrate transferring device for transferring the substrate, wherein said plating tanks are disposed along a transferring path of said substrate transferring device.
58. The plating apparatus according to claim 57 , wherein at least part of said substrate transferring device transfers the substrate by means of a linear motor.
59. The plating apparatus according to claim 57 , wherein said plating tank is adapted to perform plat the substrate such that the substrate is oriented vertically or slightly inclined.
60. The plating apparatus according to claim 59 , wherein the plating liquid is allowed to flow in said plating tank in a direction substantially parallel to the surface of the substrate held in said plating tank.
61. The plating apparatus according to claim 57 , wherein the substrate is plated with two or more kinds of metals while being held by a substrate holder.
62. The plating apparatus according to claim 61 , further comprising a drying unit for drying the plated substrate taken out of said substrate holder.
63. The plating apparatus according to claim 57 , wherein said plating tank comprises a plurality of plating units accommodated in an overflow tank, each unit being adapted for accommodating and plating one substrate.
64. The plating apparatus according to claim 57 , wherein a conductor for energizing the substrate to make it a cathode and a metal contact are made of stainless steel, or at least those surfaces of said conductor and said metal contact which contact with each other or another member are coated with gold or platinum.
65. The plating apparatus according to claim 57 , wherein a regulation plate is disposed between the substrate, serving as a cathode, and an anode facing to the substrate, in said plating tank.
66. The plating apparatus according to claim 57 , further comprising a sensor for checking the contact state between the substrate and electrical contact points for energizing the substrate to make it a cathode.
67. An apparatus for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
a cassette table for loading a substrate cassette thereon;
a plating tank for plating the substrate;
a cleaning unit for cleaning the plated substrate;
a drying unit for drying the cleaned substrate;
a deaerating unit for deaerating a plating liquid in the plating tank;
an annealing unit for annealing the plated substrate; and
a substrate transferring device for transferring the substrate.
68. The plating apparatus according to claim 67 , further comprising a resist peeling unit for peeling a resist used as a mask off from the surface of the substrate.
69. The plating apparatus according to claim 68 , further comprising a seed layer removing unit for removing an unnecessary seed layer from the surface of the substrate after the plating process.
70. A method for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
holding a substrate taken out of a cassette by a substrate holder;
pre-wetting the substrate held by said substrate holder;
plating the pre-whetted surface of the substrate by immersing the substrate together with said substrate holder in a plating liquid;
cleaning and drying the plated substrate together with said substrate holder; and
taking the substrate out of said substrate holder and drying the substrate.
71. A method for forming a protruding electrode on a substrate having wiring formed thereon, comprising:
holding a substrate taken out of a cassette by a substrate holder;
pre-soaking the substrate held by said substrate holder;
plating the pre-soaked surface of the substrate by immersing the substrate together with said substrate holder in a plating liquid;
cleaning and drying the substrate together with said substrate holder; and
taking the substrate out of said substrate holder and drying the substrate.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US10/968,183 US7402227B2 (en) | 2000-03-17 | 2004-10-20 | Plating apparatus and method |
US12/142,570 US8012332B2 (en) | 2000-03-17 | 2008-06-19 | Plating apparatus and method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2000-077188 | 2000-03-17 | ||
JP2000077188 | 2000-03-17 | ||
JP2000287324 | 2000-09-21 | ||
JP2000-287324 | 2000-09-21 |
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US10/968,183 Division US7402227B2 (en) | 2000-03-17 | 2004-10-20 | Plating apparatus and method |
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US12/142,570 Expired - Fee Related US8012332B2 (en) | 2000-03-17 | 2008-06-19 | Plating apparatus and method |
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US12/142,570 Expired - Fee Related US8012332B2 (en) | 2000-03-17 | 2008-06-19 | Plating apparatus and method |
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JP (1) | JP3979847B2 (en) |
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Cited By (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030164551A1 (en) * | 2002-03-04 | 2003-09-04 | Lee Teck Kheng | Method and apparatus for flip-chip packaging providing testing capability |
US20040007459A1 (en) * | 2002-07-11 | 2004-01-15 | Applied Materials, Inc. | Anode isolation by diffusion differentials |
US20040035449A1 (en) * | 2002-08-20 | 2004-02-26 | Ju-Hyun Nam | Wet cleaning facility having bubble-detecting device |
US20040036170A1 (en) * | 2002-08-20 | 2004-02-26 | Lee Teck Kheng | Double bumping of flexible substrate for first and second level interconnects |
US20040140199A1 (en) * | 2003-01-21 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus, plating cup and cathode ring |
WO2004081261A2 (en) * | 2003-03-11 | 2004-09-23 | Ebara Corporation | Plating apparatus |
US20050089645A1 (en) * | 2003-10-22 | 2005-04-28 | Arthur Keigler | Method and apparatus for fluid processing a workpiece |
US20050158885A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co. | Wet bench wafer floating detection system |
US20060081478A1 (en) * | 2004-10-19 | 2006-04-20 | Tsuyoshi Sahoda | Plating apparatus and plating method |
US20060110536A1 (en) * | 2003-10-22 | 2006-05-25 | Arthur Keigler | Balancing pressure to improve a fluid seal |
US20060249391A1 (en) * | 2003-04-09 | 2006-11-09 | Sungho Jin | High resolution electrolytic lithography, apparatus therefor and resulting products |
US20090218231A1 (en) * | 2002-07-18 | 2009-09-03 | Toshikazu Yajima | Plating apparatus |
US20100032802A1 (en) * | 2008-08-11 | 2010-02-11 | Texas Instruments Incorporated | Assembling of Electronic Members on IC Chip |
US20100054452A1 (en) * | 2008-08-29 | 2010-03-04 | Afzal Hassan | Agent satisfaction data for call routing based on pattern matching alogrithm |
WO2010033367A2 (en) * | 2008-09-19 | 2010-03-25 | Metokote Corporation | Systems and methods for electrocoating a part |
US20100320609A1 (en) * | 2009-06-17 | 2010-12-23 | Mayer Steven T | Wetting pretreatment for enhanced damascene metal filling |
US20110076412A1 (en) * | 2009-09-29 | 2011-03-31 | Schieszer Larry J | Wood grilling plank soaking device |
US20110226614A1 (en) * | 2010-03-19 | 2011-09-22 | Robert Rash | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US8026174B1 (en) * | 2001-04-05 | 2011-09-27 | Novellus Systems, Inc. | Sequential station tool for wet processing of semiconductor wafers |
US8125065B2 (en) | 2002-01-09 | 2012-02-28 | Micron Technology, Inc. | Elimination of RDL using tape base flip chip on flex for die stacking |
US20120305387A1 (en) * | 2011-05-30 | 2012-12-06 | Ebara Corporation | Plating apparatus |
US20140166476A1 (en) * | 2012-12-11 | 2014-06-19 | Lam Research Corporation | Bubble and foam solutions using a completely immersed air-free feedback flow control valve |
US20140262797A1 (en) * | 2013-03-12 | 2014-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electro Chemical Plating Process |
US20150041327A1 (en) * | 2013-08-06 | 2015-02-12 | Novellus Systems, Inc. | Apparatuses and methods for maintaining ph in nickel electroplating baths |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
US20150299891A1 (en) * | 2014-04-18 | 2015-10-22 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
US9347706B2 (en) * | 2013-03-28 | 2016-05-24 | Boe Technology Group., Ltd. | Reduced pressure drying method and device of a substrate |
US9404194B2 (en) | 2010-12-01 | 2016-08-02 | Novellus Systems, Inc. | Electroplating apparatus and process for wafer level packaging |
US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9481942B2 (en) | 2015-02-03 | 2016-11-01 | Lam Research Corporation | Geometry and process optimization for ultra-high RPM plating |
US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
US9677189B2 (en) | 2014-03-31 | 2017-06-13 | Ebara Corporation | Plating apparatus and method of determining electric resistance of electric contact of substrate holder |
US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
CN107075713A (en) * | 2014-10-17 | 2017-08-18 | 迪普索股份公司 | Corronil electroplanting device |
US9786532B2 (en) | 2014-03-24 | 2017-10-10 | Ebara Corporation | Substrate processing apparatus and method of transferring a substrate |
US9816193B2 (en) * | 2011-01-07 | 2017-11-14 | Novellus Systems, Inc. | Configuration and method of operation of an electrodeposition system for improved process stability and performance |
US9816196B2 (en) | 2012-04-27 | 2017-11-14 | Novellus Systems, Inc. | Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte |
US20180223444A1 (en) * | 2017-02-08 | 2018-08-09 | Ebara Corporation | Plating apparatus and substrate holder used together with plating apparatus |
US20180282892A1 (en) * | 2017-03-31 | 2018-10-04 | Ebara Corporation | Plating method and plating apparatus |
US20190032234A1 (en) * | 2017-07-27 | 2019-01-31 | Semsysco Gmbh | Substrate locking system, device and procedure for chemical and/or electrolytic surface treatment |
US10240247B2 (en) | 2014-02-10 | 2019-03-26 | Ebara Corporation | Anode holder and plating apparatus |
US20190218682A1 (en) * | 2016-10-07 | 2019-07-18 | Tokyo Electron Limited | Electrolytic processing jig and electrolytic processing method |
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Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7022211B2 (en) | 2000-01-31 | 2006-04-04 | Ebara Corporation | Semiconductor wafer holder and electroplating system for plating a semiconductor wafer |
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US20070262341A1 (en) * | 2006-05-09 | 2007-11-15 | Wen-Huang Liu | Vertical led with eutectic layer |
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US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9624592B2 (en) | 2010-07-02 | 2017-04-18 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
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JP5504147B2 (en) | 2010-12-21 | 2014-05-28 | 株式会社荏原製作所 | Electroplating method |
US9421617B2 (en) | 2011-06-22 | 2016-08-23 | Tel Nexx, Inc. | Substrate holder |
US8613474B2 (en) | 2011-07-06 | 2013-12-24 | Tel Nexx, Inc. | Substrate loader and unloader having a Bernoulli support |
JP5908266B2 (en) * | 2011-11-30 | 2016-04-26 | 株式会社Screenホールディングス | Anodizing apparatus, anodizing system including the same, and semiconductor wafer |
US9534308B2 (en) | 2012-06-05 | 2017-01-03 | Novellus Systems, Inc. | Protecting anodes from passivation in alloy plating systems |
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TWI624567B (en) * | 2012-12-11 | 2018-05-21 | 諾發系統有限公司 | Electrofill vacuum plating cell |
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JP6077886B2 (en) | 2013-03-04 | 2017-02-08 | 株式会社荏原製作所 | Plating equipment |
WO2016044720A1 (en) * | 2014-09-18 | 2016-03-24 | Modumetal, Inc. | A method and apparatus for continuously applying nanolaminate metal coatings |
EP4414477A2 (en) | 2013-03-15 | 2024-08-14 | Modumetal, Inc. | Electrodeposited compositions and nanolaminated alloys for articles prepared by additive manufacturing processes |
EA032264B1 (en) | 2013-03-15 | 2019-05-31 | Модьюметл, Инк. | Method of coating an article, article prepared by the above method and pipe |
EA201500949A1 (en) | 2013-03-15 | 2016-02-29 | Модьюметл, Инк. | METHOD OF FORMING A MULTILAYER COATING, A COATING FORMED BY THE ABOVE METHOD, AND A MULTILAYER COATING |
CA2905575C (en) | 2013-03-15 | 2022-07-12 | Modumetal, Inc. | A method and apparatus for continuously applying nanolaminate metal coatings |
US10472727B2 (en) | 2013-03-15 | 2019-11-12 | Modumetal, Inc. | Method and apparatus for continuously applying nanolaminate metal coatings |
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US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US20170370017A1 (en) * | 2016-06-27 | 2017-12-28 | Tel Nexx, Inc. | Wet processing system and method of operating |
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BR112019004508A2 (en) | 2016-09-08 | 2019-06-04 | Modumetal Inc | methods for obtaining laminated coatings on workpieces and articles made therefrom |
JP6789321B2 (en) | 2017-02-01 | 2020-11-25 | 東京エレクトロン株式会社 | Electrolytic treatment equipment and electrolytic treatment method |
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WO2018195516A1 (en) | 2017-04-21 | 2018-10-25 | Modumetal, Inc. | Tubular articles with electrodeposited coatings, and systems and methods for producing the same |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
CN111247274A (en) * | 2017-10-20 | 2020-06-05 | Almex Pe 株式会社 | Surface treatment device |
WO2019089282A1 (en) | 2017-11-01 | 2019-05-09 | Lam Research Corporation | Controlling plating electrolyte concentration on an electrochemical plating apparatus |
KR102443193B1 (en) * | 2018-01-29 | 2022-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Systems and Methods for Copper(I) Suppression in Electrochemical Vapor Deposition |
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WO2019210264A1 (en) | 2018-04-27 | 2019-10-31 | Modumetal, Inc. | Apparatuses, systems, and methods for producing a plurality of articles with nanolaminated coatings using rotation |
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CN109989096A (en) * | 2019-03-22 | 2019-07-09 | 广州明毅电子机械有限公司 | A kind of plating primary and secondary slot device |
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TW202305192A (en) * | 2021-04-15 | 2023-02-01 | 美商蘭姆研究公司 | Control of dissolved gas concentration in electroplating baths |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258244B1 (en) * | 1997-05-14 | 2001-07-10 | Canon Kabushiki Kaisha | Treating method and apparatus utilizing chemical reaction |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2341712A (en) * | 1940-09-13 | 1944-02-15 | Western Electric Co | Method of making cable |
US3623962A (en) | 1968-07-31 | 1971-11-30 | Nat Steel Corp | Reducing electrolytic sludge formation |
JPS6410073U (en) * | 1987-07-03 | 1989-01-19 | ||
JPH01116094A (en) * | 1987-10-28 | 1989-05-09 | Eagle Ind Co Ltd | Diaphragm plating method |
US5092975A (en) * | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
JP2894867B2 (en) * | 1991-06-14 | 1999-05-24 | 株式会社イデヤ | Soldering equipment for electronic components |
US5312532A (en) * | 1993-01-15 | 1994-05-17 | International Business Machines Corporation | Multi-compartment eletroplating system |
US5316642A (en) * | 1993-04-22 | 1994-05-31 | Digital Equipment Corporation | Oscillation device for plating system |
JPH06334087A (en) * | 1993-05-21 | 1994-12-02 | Hitachi Cable Ltd | Manufacture of lead frame for semiconductor device |
US5421987A (en) * | 1993-08-30 | 1995-06-06 | Tzanavaras; George | Precision high rate electroplating cell and method |
JPH08134699A (en) * | 1994-11-14 | 1996-05-28 | Hitachi Ltd | Plating device |
US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
US5670034A (en) * | 1995-07-11 | 1997-09-23 | American Plating Systems | Reciprocating anode electrolytic plating apparatus and method |
JPH09264000A (en) * | 1996-03-28 | 1997-10-07 | Kawasaki Steel Corp | Acidic halogen electrolytic tin plating equipment |
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
US5746903A (en) * | 1996-07-26 | 1998-05-05 | Fujitsu Limited | Wet chemical processing techniques for plating high aspect ratio features |
JPH10287978A (en) * | 1997-04-16 | 1998-10-27 | Canon Inc | Mask mounting method and mask attaching and removing device |
FI105178B (en) * | 1997-04-29 | 2000-06-30 | Outokumpu Oy | Gripping member |
JPH11152597A (en) * | 1997-11-19 | 1999-06-08 | Ebara Corp | Plating pretreatment |
DE69840975D1 (en) * | 1997-09-02 | 2009-08-27 | Ebara Corp | Method and device for applying a layer to a body |
US6110011A (en) * | 1997-11-10 | 2000-08-29 | Applied Materials, Inc. | Integrated electrodeposition and chemical-mechanical polishing tool |
US6113769A (en) | 1997-11-21 | 2000-09-05 | International Business Machines Corporation | Apparatus to monitor and add plating solution of plating baths and controlling quality of deposited metal |
US6099702A (en) * | 1998-06-10 | 2000-08-08 | Novellus Systems, Inc. | Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability |
CN1244722C (en) | 1998-07-10 | 2006-03-08 | 塞米用具公司 | Method and apparatus for copper plating using electroless plating and electroplating |
US6517689B1 (en) * | 1998-07-10 | 2003-02-11 | Ebara Corporation | Plating device |
US6074544A (en) * | 1998-07-22 | 2000-06-13 | Novellus Systems, Inc. | Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer |
KR100683268B1 (en) * | 1998-09-08 | 2007-02-15 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate plating device |
US6248222B1 (en) * | 1998-09-08 | 2001-06-19 | Acm Research, Inc. | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
TW522455B (en) * | 1998-11-09 | 2003-03-01 | Ebara Corp | Plating method and apparatus therefor |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6454918B1 (en) | 1999-03-23 | 2002-09-24 | Electroplating Engineers Of Japan Limited | Cup type plating apparatus |
WO2000070128A1 (en) * | 1999-05-18 | 2000-11-23 | Ebara Corporation | Plating jig and device for semiconductor wafer |
US6113764A (en) * | 1999-05-26 | 2000-09-05 | Ppg Industries Ohio, Inc. | Processes for coating a metal substrate with an electrodeposited coating composition and drying the same |
US6391209B1 (en) | 1999-08-04 | 2002-05-21 | Mykrolis Corporation | Regeneration of plating baths |
US6352623B1 (en) * | 1999-12-17 | 2002-03-05 | Nutool, Inc. | Vertically configured chamber used for multiple processes |
-
2001
- 2001-03-16 EP EP08018576A patent/EP2017374A3/en not_active Withdrawn
- 2001-03-16 KR KR1020010013628A patent/KR100804714B1/en active IP Right Grant
- 2001-03-16 WO PCT/JP2001/002114 patent/WO2001068952A1/en active Application Filing
- 2001-03-16 EP EP01912443A patent/EP1229154A4/en not_active Withdrawn
- 2001-03-16 TW TW090106163A patent/TWI281516B/en not_active IP Right Cessation
- 2001-03-16 JP JP2001567827A patent/JP3979847B2/en not_active Expired - Lifetime
- 2001-03-16 US US09/809,295 patent/US20020027080A1/en not_active Abandoned
-
2004
- 2004-10-20 US US10/968,183 patent/US7402227B2/en not_active Expired - Lifetime
-
2008
- 2008-06-19 US US12/142,570 patent/US8012332B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258244B1 (en) * | 1997-05-14 | 2001-07-10 | Canon Kabushiki Kaisha | Treating method and apparatus utilizing chemical reaction |
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US8450210B1 (en) | 2001-04-05 | 2013-05-28 | Novellus Systems, Inc. | Sequential station tool for wet processing of semiconductor wafers |
US8026174B1 (en) * | 2001-04-05 | 2011-09-27 | Novellus Systems, Inc. | Sequential station tool for wet processing of semiconductor wafers |
US8883640B1 (en) | 2001-04-05 | 2014-11-11 | Novellus Systems, Inc. | Sequential station tool for wet processing of semiconductor wafers |
US8125065B2 (en) | 2002-01-09 | 2012-02-28 | Micron Technology, Inc. | Elimination of RDL using tape base flip chip on flex for die stacking |
US8441113B2 (en) | 2002-01-09 | 2013-05-14 | Micron Technology, Inc. | Elimination of RDL using tape base flip chip on flex for die stacking |
US7915718B2 (en) | 2002-03-04 | 2011-03-29 | Micron Technology, Inc. | Apparatus for flip-chip packaging providing testing capability |
US20060240595A1 (en) * | 2002-03-04 | 2006-10-26 | Lee Teck K | Method and apparatus for flip-chip packaging providing testing capability |
US20030164551A1 (en) * | 2002-03-04 | 2003-09-04 | Lee Teck Kheng | Method and apparatus for flip-chip packaging providing testing capability |
US20040007459A1 (en) * | 2002-07-11 | 2004-01-15 | Applied Materials, Inc. | Anode isolation by diffusion differentials |
US6875331B2 (en) | 2002-07-11 | 2005-04-05 | Applied Materials, Inc. | Anode isolation by diffusion differentials |
US20090218231A1 (en) * | 2002-07-18 | 2009-09-03 | Toshikazu Yajima | Plating apparatus |
US20040198033A1 (en) * | 2002-08-20 | 2004-10-07 | Lee Teck Kheng | Double bumping of flexible substrate for first and second level interconnects |
US7320933B2 (en) * | 2002-08-20 | 2008-01-22 | Micron Technology, Inc. | Double bumping of flexible substrate for first and second level interconnects |
US20040035449A1 (en) * | 2002-08-20 | 2004-02-26 | Ju-Hyun Nam | Wet cleaning facility having bubble-detecting device |
US20040036170A1 (en) * | 2002-08-20 | 2004-02-26 | Lee Teck Kheng | Double bumping of flexible substrate for first and second level interconnects |
US20070023277A1 (en) * | 2003-01-21 | 2007-02-01 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus, plating cup and cathode ring |
US7169269B2 (en) | 2003-01-21 | 2007-01-30 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus, plating cup and cathode ring |
US20070080057A1 (en) * | 2003-01-21 | 2007-04-12 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus, plating cup and cathode ring |
US20040140199A1 (en) * | 2003-01-21 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Plating apparatus, plating cup and cathode ring |
WO2004081261A3 (en) * | 2003-03-11 | 2005-05-26 | Ebara Corp | Plating apparatus |
WO2004081261A2 (en) * | 2003-03-11 | 2004-09-23 | Ebara Corporation | Plating apparatus |
US7875158B2 (en) | 2003-03-11 | 2011-01-25 | Ebara Corporation | Plating apparatus |
US20060113185A1 (en) * | 2003-03-11 | 2006-06-01 | Fumio Kuriyama | Plating apparatus |
US20110073482A1 (en) * | 2003-03-11 | 2011-03-31 | Fumio Kuriyama | Plating apparatus |
US8252167B2 (en) | 2003-03-11 | 2012-08-28 | Ebara Corporation | Plating apparatus |
US20060249391A1 (en) * | 2003-04-09 | 2006-11-09 | Sungho Jin | High resolution electrolytic lithography, apparatus therefor and resulting products |
US8168057B2 (en) | 2003-10-22 | 2012-05-01 | Nexx Systems, Inc. | Balancing pressure to improve a fluid seal |
US20050089645A1 (en) * | 2003-10-22 | 2005-04-28 | Arthur Keigler | Method and apparatus for fluid processing a workpiece |
US7722747B2 (en) | 2003-10-22 | 2010-05-25 | Nexx Systems, Inc. | Method and apparatus for fluid processing a workpiece |
US20050160977A1 (en) * | 2003-10-22 | 2005-07-28 | Arthur Keigler | Method and apparatus for fluid processing a workpiece |
US7727366B2 (en) | 2003-10-22 | 2010-06-01 | Nexx Systems, Inc. | Balancing pressure to improve a fluid seal |
US9453290B2 (en) | 2003-10-22 | 2016-09-27 | Tel Nexx, Inc. | Apparatus for fluid processing a workpiece |
US8277624B2 (en) | 2003-10-22 | 2012-10-02 | Tel Nexx, Inc. | Method and apparatus for fluid processing a workpiece |
US20060110536A1 (en) * | 2003-10-22 | 2006-05-25 | Arthur Keigler | Balancing pressure to improve a fluid seal |
US8512543B2 (en) | 2003-10-22 | 2013-08-20 | Tel Nexx, Inc. | Method for fluid processing a workpiece |
US7445697B2 (en) | 2003-10-22 | 2008-11-04 | Nexx Systems, Inc. | Method and apparatus for fluid processing a workpiece |
US20050158885A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co. | Wet bench wafer floating detection system |
CN100336193C (en) * | 2004-01-20 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Control apparatus and method for preventing wafer from breaking |
US20060081478A1 (en) * | 2004-10-19 | 2006-04-20 | Tsuyoshi Sahoda | Plating apparatus and plating method |
US20100032802A1 (en) * | 2008-08-11 | 2010-02-11 | Texas Instruments Incorporated | Assembling of Electronic Members on IC Chip |
US20100054452A1 (en) * | 2008-08-29 | 2010-03-04 | Afzal Hassan | Agent satisfaction data for call routing based on pattern matching alogrithm |
US20100072071A1 (en) * | 2008-09-19 | 2010-03-25 | Metokote Corporation | Systems and methods for electrocoating a part |
US8524065B2 (en) | 2008-09-19 | 2013-09-03 | Metokote Corporation | Systems and methods for electrocoating a part |
WO2010033367A2 (en) * | 2008-09-19 | 2010-03-25 | Metokote Corporation | Systems and methods for electrocoating a part |
WO2010033367A3 (en) * | 2008-09-19 | 2010-05-27 | Metokote Corporation | Systems and methods for electrocoating a part |
US8962085B2 (en) * | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US10840101B2 (en) | 2009-06-17 | 2020-11-17 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US9721800B2 (en) | 2009-06-17 | 2017-08-01 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
US10301738B2 (en) | 2009-06-17 | 2019-05-28 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US20100320609A1 (en) * | 2009-06-17 | 2010-12-23 | Mayer Steven T | Wetting pretreatment for enhanced damascene metal filling |
US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9852913B2 (en) | 2009-06-17 | 2017-12-26 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US9828688B2 (en) | 2009-06-17 | 2017-11-28 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US8596214B2 (en) * | 2009-09-29 | 2013-12-03 | Larry J. Schieszer | Wood grilling plank soaking device |
US20110076412A1 (en) * | 2009-09-29 | 2011-03-31 | Schieszer Larry J | Wood grilling plank soaking device |
US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
CN102242388A (en) * | 2010-03-19 | 2011-11-16 | 诺发系统有限公司 | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
CN105154960A (en) * | 2010-03-19 | 2015-12-16 | 诺发系统有限公司 | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US8603305B2 (en) * | 2010-03-19 | 2013-12-10 | Novellus Systems, Inc. | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US9139927B2 (en) | 2010-03-19 | 2015-09-22 | Novellus Systems, Inc. | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US20110226614A1 (en) * | 2010-03-19 | 2011-09-22 | Robert Rash | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
TWI565840B (en) * | 2010-03-19 | 2017-01-11 | 諾菲勒斯系統公司 | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US20110226613A1 (en) * | 2010-03-19 | 2011-09-22 | Robert Rash | Electrolyte loop with pressure regulation for separated anode chamber of electroplating system |
US9404194B2 (en) | 2010-12-01 | 2016-08-02 | Novellus Systems, Inc. | Electroplating apparatus and process for wafer level packaging |
US9982357B2 (en) | 2010-12-01 | 2018-05-29 | Novellus Systems, Inc. | Electroplating apparatus and process for wafer level packaging |
US10309024B2 (en) | 2010-12-01 | 2019-06-04 | Novellus Systems, Inc. | Electroplating apparatus and process for wafer level packaging |
US9816193B2 (en) * | 2011-01-07 | 2017-11-14 | Novellus Systems, Inc. | Configuration and method of operation of an electrodeposition system for improved process stability and performance |
US10745817B2 (en) | 2011-01-07 | 2020-08-18 | Novellus Systems, Inc. | Configuration and method of operation of an electrodeposition system for improved process stability and performance |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US8734624B2 (en) * | 2011-05-30 | 2014-05-27 | Ebara Corporation | Plating apparatus |
US20120305387A1 (en) * | 2011-05-30 | 2012-12-06 | Ebara Corporation | Plating apparatus |
US9816196B2 (en) | 2012-04-27 | 2017-11-14 | Novellus Systems, Inc. | Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte |
US9617652B2 (en) * | 2012-12-11 | 2017-04-11 | Lam Research Corporation | Bubble and foam solutions using a completely immersed air-free feedback flow control valve |
US10208395B2 (en) | 2012-12-11 | 2019-02-19 | Lam Research Corporation | Bubble and foam solutions using a completely immersed air-free feedback flow control valve |
US20140166476A1 (en) * | 2012-12-11 | 2014-06-19 | Lam Research Corporation | Bubble and foam solutions using a completely immersed air-free feedback flow control valve |
US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9476135B2 (en) * | 2013-03-12 | 2016-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electro chemical plating process |
US20140262797A1 (en) * | 2013-03-12 | 2014-09-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electro Chemical Plating Process |
US9347706B2 (en) * | 2013-03-28 | 2016-05-24 | Boe Technology Group., Ltd. | Reduced pressure drying method and device of a substrate |
US10190232B2 (en) * | 2013-08-06 | 2019-01-29 | Lam Research Corporation | Apparatuses and methods for maintaining pH in nickel electroplating baths |
US20150041327A1 (en) * | 2013-08-06 | 2015-02-12 | Novellus Systems, Inc. | Apparatuses and methods for maintaining ph in nickel electroplating baths |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
US10240247B2 (en) | 2014-02-10 | 2019-03-26 | Ebara Corporation | Anode holder and plating apparatus |
US9786532B2 (en) | 2014-03-24 | 2017-10-10 | Ebara Corporation | Substrate processing apparatus and method of transferring a substrate |
US10141211B2 (en) | 2014-03-24 | 2018-11-27 | Ebara Corporation | Substrate processing apparatus and substrate transfer method |
US9677189B2 (en) | 2014-03-31 | 2017-06-13 | Ebara Corporation | Plating apparatus and method of determining electric resistance of electric contact of substrate holder |
US10954604B2 (en) | 2014-04-18 | 2021-03-23 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
US20150299891A1 (en) * | 2014-04-18 | 2015-10-22 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
US20170298532A1 (en) * | 2014-04-18 | 2017-10-19 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
US9732434B2 (en) * | 2014-04-18 | 2017-08-15 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
CN107075713A (en) * | 2014-10-17 | 2017-08-18 | 迪普索股份公司 | Corronil electroplanting device |
US10538854B2 (en) | 2014-10-17 | 2020-01-21 | Dipsol Chemicals Co., Ltd. | Copper-nickel alloy electroplating device |
US9481942B2 (en) | 2015-02-03 | 2016-11-01 | Lam Research Corporation | Geometry and process optimization for ultra-high RPM plating |
US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
US10577714B2 (en) | 2016-04-14 | 2020-03-03 | Ebara Corporation | Plating apparatus and plating method |
US20190218682A1 (en) * | 2016-10-07 | 2019-07-18 | Tokyo Electron Limited | Electrolytic processing jig and electrolytic processing method |
US11542627B2 (en) * | 2016-10-07 | 2023-01-03 | Tokyo Electron Limited | Electrolytic processing jig and electrolytic processing method |
KR20180092271A (en) * | 2017-02-08 | 2018-08-17 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating apparatus and substrate holder used together with plating apparatus |
KR102438895B1 (en) * | 2017-02-08 | 2022-09-02 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating apparatus and substrate holder used together with plating apparatus |
US20180223444A1 (en) * | 2017-02-08 | 2018-08-09 | Ebara Corporation | Plating apparatus and substrate holder used together with plating apparatus |
US20180282892A1 (en) * | 2017-03-31 | 2018-10-04 | Ebara Corporation | Plating method and plating apparatus |
US10865492B2 (en) * | 2017-03-31 | 2020-12-15 | Ebara Corporation | Plating method and plating apparatus |
CN108691000A (en) * | 2017-03-31 | 2018-10-23 | 株式会社荏原制作所 | Coating method and plater |
US11447885B2 (en) | 2017-03-31 | 2022-09-20 | Ebara Corporation | Plating method and plating apparatus |
US20190032234A1 (en) * | 2017-07-27 | 2019-01-31 | Semsysco Gmbh | Substrate locking system, device and procedure for chemical and/or electrolytic surface treatment |
US11136687B2 (en) * | 2017-07-27 | 2021-10-05 | Semsysco Gmbh | Substrate locking system, device and procedure for chemical and/or electrolytic surface treatment |
US11566337B2 (en) | 2017-07-27 | 2023-01-31 | Semsysco Gmbh | Substrate locking system, device and procedure for chemical and/or electrolytic surface treatment |
US11859303B2 (en) | 2017-08-30 | 2024-01-02 | Acm Research (Shanghai), Inc. | Plating apparatus |
US10760178B2 (en) | 2018-07-12 | 2020-09-01 | Lam Research Corporation | Method and apparatus for synchronized pressure regulation of separated anode chamber |
US11585007B2 (en) | 2018-11-19 | 2023-02-21 | Lam Research Corporation | Cross flow conduit for foaming prevention in high convection plating cells |
US11261535B2 (en) | 2019-03-22 | 2022-03-01 | Pyxis Cf Pte. Ltd. | Plating apparatus and operation method thereof |
US11230792B2 (en) * | 2019-10-14 | 2022-01-25 | Manz China Suzhou Ltd. | Vertical electroplating module and electroplating method for fan-out panel level chip |
US11810797B2 (en) * | 2019-10-14 | 2023-11-07 | Pyxis Cf Pte. Ltd. | Wetting processing apparatus and operation method thereof |
CN114981484A (en) * | 2020-12-23 | 2022-08-30 | 株式会社荏原制作所 | Plating apparatus and plating method |
CN114108047A (en) * | 2020-12-29 | 2022-03-01 | 台湾积体电路制造股份有限公司 | Plating apparatus and plating method for plating semiconductor wafer |
TWI750043B (en) * | 2020-12-29 | 2021-12-11 | 台灣積體電路製造股份有限公司 | Plating apparatus for plating semiconductor wafer and plating method |
CN113930819A (en) * | 2021-11-11 | 2022-01-14 | 江苏华旺新材料有限公司 | Aluminum pipe plated with copper on surface and production process thereof |
CN115012019A (en) * | 2022-06-07 | 2022-09-06 | 赛莱克斯微系统科技(北京)有限公司 | Wafer conveying device and electroplating system |
CN116288610A (en) * | 2023-01-04 | 2023-06-23 | 三铃金属制品(东莞)有限公司 | Electroplating equipment and electroplating process suitable for copper products |
CN116254588A (en) * | 2023-02-07 | 2023-06-13 | 无锡丰荣电镀设备制造有限公司 | Auxiliary device for electroplating metal workpiece and application method thereof |
Also Published As
Publication number | Publication date |
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EP2017374A3 (en) | 2011-04-27 |
KR100804714B1 (en) | 2008-02-18 |
KR20010090469A (en) | 2001-10-18 |
WO2001068952A1 (en) | 2001-09-20 |
TWI281516B (en) | 2007-05-21 |
EP2017374A2 (en) | 2009-01-21 |
US7402227B2 (en) | 2008-07-22 |
US20050082163A1 (en) | 2005-04-21 |
US8012332B2 (en) | 2011-09-06 |
EP1229154A1 (en) | 2002-08-07 |
US20080245669A1 (en) | 2008-10-09 |
EP1229154A4 (en) | 2006-12-13 |
JP3979847B2 (en) | 2007-09-19 |
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