KR101058917B1 - 전기 도금 장치 - Google Patents

전기 도금 장치 Download PDF

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Publication number
KR101058917B1
KR101058917B1 KR1020057016780A KR20057016780A KR101058917B1 KR 101058917 B1 KR101058917 B1 KR 101058917B1 KR 1020057016780 A KR1020057016780 A KR 1020057016780A KR 20057016780 A KR20057016780 A KR 20057016780A KR 101058917 B1 KR101058917 B1 KR 101058917B1
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KR
South Korea
Prior art keywords
plating
plating solution
substrate
workpiece
stirring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057016780A
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English (en)
Korean (ko)
Other versions
KR20050114226A (ko
Inventor
후미오 구리야마
다카시 다케무라
노부토시 사이토
마사아키 기무라
레이 기우미
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20050114226A publication Critical patent/KR20050114226A/ko
Application granted granted Critical
Publication of KR101058917B1 publication Critical patent/KR101058917B1/ko
Anticipated expiration legal-status Critical
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1628Specific elements or parts of the apparatus
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08Electroplating with moving electrolyte e.g. jet electroplating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020057016780A 2003-03-11 2004-03-09 전기 도금 장치 Expired - Fee Related KR101058917B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00065476 2003-03-11
JP2003065476 2003-03-11
JP2003208315 2003-08-21
JPJP-P-2003-00208315 2003-08-21
PCT/JP2004/003040 WO2004081261A2 (en) 2003-03-11 2004-03-09 Plating apparatus

Publications (2)

Publication Number Publication Date
KR20050114226A KR20050114226A (ko) 2005-12-05
KR101058917B1 true KR101058917B1 (ko) 2011-08-23

Family

ID=32992950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057016780A Expired - Fee Related KR101058917B1 (ko) 2003-03-11 2004-03-09 전기 도금 장치

Country Status (7)

Country Link
US (2) US7875158B2 (https=)
EP (1) EP1602127A2 (https=)
JP (2) JP4805141B2 (https=)
KR (1) KR101058917B1 (https=)
CN (1) CN101812711B (https=)
TW (2) TWI341875B (https=)
WO (1) WO2004081261A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1668174A2 (en) 2003-10-02 2006-06-14 Ebara Corporation Plating method and apparatus
KR101146525B1 (ko) * 2005-06-30 2012-05-25 엘지디스플레이 주식회사 기판 고정 지그 및 그 제조방법
NL1032540C2 (nl) * 2006-09-19 2008-03-20 Meco Equip Eng Inrichting voor het elektrolytisch neerslaan van materiaal op een plaatvormig substraat.
JP4684979B2 (ja) * 2006-10-19 2011-05-18 本田技研工業株式会社 メッキ装置
JP2008121062A (ja) * 2006-11-10 2008-05-29 Ebara Corp めっき装置及びめっき方法
DE102007026635B4 (de) * 2007-06-06 2010-07-29 Atotech Deutschland Gmbh Vorrichtung zum nasschemischen Behandeln von Ware, Verwendung eines Strömungsorgans, Verfahren zum Einbauen eines Strömungsorgans in die Vorrichtung sowie Verfahren zur Herstellung einer nasschemisch behandelten Ware
DE102007026633B4 (de) * 2007-06-06 2009-04-02 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware
JP4942580B2 (ja) * 2007-08-20 2012-05-30 株式会社荏原製作所 アノードホルダ用通電ベルトおよびアノードホルダ
US8177944B2 (en) 2007-12-04 2012-05-15 Ebara Corporation Plating apparatus and plating method
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
JP4547016B2 (ja) 2008-04-04 2010-09-22 東京エレクトロン株式会社 半導体製造装置、半導体製造方法
JP5155755B2 (ja) * 2008-07-10 2013-03-06 株式会社荏原製作所 磁性体膜めっき装置及びめっき処理設備
EP2435373B1 (de) * 2009-05-29 2015-03-18 Holger Blum Verfahren und vorrichtung zur behandlung von ballastwasser mit acrolein
WO2011103214A1 (en) * 2010-02-16 2011-08-25 Cypress Semiconductor Corporation Integrated shielding for wafer plating
US20110284385A1 (en) * 2010-05-21 2011-11-24 Pioneer Metal Finishing Method and Apparatus For Anodizing Objects
KR101693217B1 (ko) * 2010-07-20 2017-01-05 주식회사 케이엠더블유 전기도금 장치
US9222194B2 (en) * 2010-08-19 2015-12-29 International Business Machines Corporation Rinsing and drying for electrochemical processing
KR101153537B1 (ko) * 2010-09-10 2012-06-11 삼성전기주식회사 인쇄회로기판 도금 장치
JP6092653B2 (ja) * 2012-02-27 2017-03-08 株式会社荏原製作所 基板洗浄装置及び洗浄方法
JP5788349B2 (ja) * 2012-03-19 2015-09-30 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
CN102660764B (zh) * 2012-05-25 2014-07-16 深圳顺络电子股份有限公司 一种镀篮内阴极
US8920616B2 (en) * 2012-06-18 2014-12-30 Headway Technologies, Inc. Paddle for electroplating for selectively depositing greater thickness
JP5699253B2 (ja) * 2012-07-02 2015-04-08 新日鐵住金株式会社 電気めっき装置
ES2772808T3 (es) * 2014-03-11 2020-07-08 Qualital Servizi S R L Instalación y procedimiento para el tratamiento de anodización de productos fabricados de aluminio o aleaciones del mismo
US10030313B2 (en) 2014-05-12 2018-07-24 Yamamoto-MS., Co. LTD. Plating apparatus and container bath
JP6411943B2 (ja) * 2014-05-26 2018-10-24 株式会社荏原製作所 基板電解処理装置、および該基板電解処理装置に使用されるパドル
GB2564894B (en) * 2017-07-27 2021-11-24 Semsysco Gmbh System for chemical and/or electrolytic surface treatment
JP6995544B2 (ja) * 2017-09-20 2022-01-14 上村工業株式会社 表面処理装置および表面処理方法
CN111247272A (zh) * 2017-10-20 2020-06-05 Almex Pe 株式会社 表面处理装置
JP6966958B2 (ja) * 2018-03-01 2021-11-17 株式会社荏原製作所 めっき液を撹拌するために用いるパドルおよびパドルを備えるめっき装置
JP6790016B2 (ja) * 2018-04-10 2020-11-25 上村工業株式会社 表面処理装置、表面処理方法及びパドル
JP6895927B2 (ja) * 2018-05-28 2021-06-30 三菱電機株式会社 半導体装置の製造装置および半導体装置の製造方法
KR102159043B1 (ko) * 2018-07-05 2020-09-23 주식회사 테토스 웨이퍼 도금 시스템
CN112513341A (zh) * 2018-07-30 2021-03-16 雷纳技术有限责任公司 流发生器、淀积装置和用于淀积材料的方法
US11136688B1 (en) * 2018-08-08 2021-10-05 University Of Louisville Research Foundation, Inc. Use of electropolishing for uniform surface treatment of metal components with complex external geometries
CN110888305A (zh) * 2018-09-07 2020-03-17 王彦智 高阶负型光阻剥膜槽
JP7034880B2 (ja) * 2018-10-05 2022-03-14 株式会社荏原製作所 洗浄装置、これを備えためっき装置、及び洗浄方法
US10865496B2 (en) * 2018-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Plating apparatus and plating method
US12270119B2 (en) 2019-03-22 2025-04-08 Pyxis Cf Pte. Ltd. Plating apparatus and operation method thereof
CN110735174B (zh) * 2019-03-22 2022-08-02 Pyxis Cf私人有限公司 电镀设备及其操作方法
JP7169939B2 (ja) * 2019-05-27 2022-11-11 株式会社荏原製作所 湿式基板処理装置
JP7383441B2 (ja) * 2019-10-07 2023-11-20 上村工業株式会社 表面処理装置、表面処理方法及びパドル
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KR102528900B1 (ko) * 2020-11-30 2023-05-04 주식회사 호진플라텍 도금액 순환, 도금액 교반 및 기포 제거를 동시에 수행하는 하이브리드 패들을 포함하는 기판용 도금장치
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TWI784691B (zh) * 2021-08-27 2022-11-21 台灣先進系統股份有限公司 水平式電鍍系統
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TWI813129B (zh) * 2022-01-06 2023-08-21 日月光半導體製造股份有限公司 化學鍍槽、化學鍍系統及化學鍍方法
JP2023158895A (ja) * 2022-04-19 2023-10-31 株式会社東設 無電解めっき装置
CN115595641A (zh) * 2022-09-21 2023-01-13 通威太阳能(成都)有限公司(Cn) 太阳电池及栅线的电镀工艺
CN116288616A (zh) * 2023-04-06 2023-06-23 龙游龙辉电镀有限公司 一种单面电镀装置及其使用方法
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CN116497302B (zh) * 2023-06-21 2023-11-24 山东华辉通信科技有限公司 一种通讯铁塔加工防锈用镀锌设备
CN119980206B (zh) * 2025-04-16 2025-08-05 天津九易金属表面处理有限公司 一种触头支座化学镀银设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153246A1 (en) 1998-07-09 2002-10-24 Hui Wang Method and apparatus for electropolishing metal interconnections on semiconductor devices

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53119227A (en) * 1977-03-28 1978-10-18 Sankuesuto Kk Plating method
JPS592116Y2 (ja) * 1979-09-05 1984-01-20 松下電器産業株式会社 メッキ装置
JPS59208092A (ja) * 1983-05-11 1984-11-26 Hitachi Ltd 貴金属メツキ法
JPS61270889A (ja) * 1985-05-25 1986-12-01 三菱電機株式会社 めつき装置
JPH05331679A (ja) * 1992-06-01 1993-12-14 Sumitomo Metal Ind Ltd めっき装置
JPH0754189A (ja) * 1993-08-12 1995-02-28 Matsushita Electric Ind Co Ltd 電気メッキ装置
US5421987A (en) * 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
JPH07210823A (ja) 1994-01-10 1995-08-11 Fuji Elelctrochem Co Ltd 薄膜磁気ヘッドの磁極形成方法
US5683564A (en) * 1996-10-15 1997-11-04 Reynolds Tech Fabricators Inc. Plating cell and plating method with fluid wiper
JPH10317199A (ja) * 1997-05-20 1998-12-02 Hitachi Metals Ltd めっき方法およびめっき装置
JPH11181590A (ja) * 1997-12-17 1999-07-06 Hitachi Ltd 電解めっき方法および装置
US6071388A (en) * 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
EP1174912A4 (en) 1999-12-24 2009-11-25 Ebara Corp SEMICONDUCTOR DISC GENERATING APPARATUS AND MANUFACTURING METHOD
US6547937B1 (en) * 2000-01-03 2003-04-15 Semitool, Inc. Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece
CN2405647Y (zh) * 2000-01-21 2000-11-15 华东师范大学 液体搅拌装置
US20020027080A1 (en) * 2000-03-17 2002-03-07 Junichiro Yoshioka Plating apparatus and method
KR100800531B1 (ko) * 2000-06-30 2008-02-04 가부시키가이샤 에바라 세이사꾸쇼 구리 도금액, 도금 방법 및 도금 장치
JP2002115096A (ja) * 2000-10-10 2002-04-19 Applied Materials Inc めっき装置
JP3501747B2 (ja) * 2000-10-26 2004-03-02 秀行 小林 メッキ装置の流量調整可能なメッキ液噴出ノズルシステム
JP3340724B2 (ja) * 2000-12-01 2002-11-05 丸仲工業株式会社 メッキ装置のメッキ液噴出ノズル装置
CN2471797Y (zh) * 2001-01-15 2002-01-16 太原风华高新技术有限公司 电镀用循环过滤搅拌装置
US20030155185A1 (en) * 2001-03-08 2003-08-21 Masami Nomura Elevator
JP2002367998A (ja) * 2001-06-11 2002-12-20 Ebara Corp 半導体装置及びその製造方法
US6875333B2 (en) * 2002-02-14 2005-04-05 Electroplating Engineers Of Japan Limited Plating apparatus for wafer
US7390382B2 (en) * 2003-07-01 2008-06-24 Semitool, Inc. Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020153246A1 (en) 1998-07-09 2002-10-24 Hui Wang Method and apparatus for electropolishing metal interconnections on semiconductor devices

Also Published As

Publication number Publication date
WO2004081261B1 (en) 2005-07-14
TW200422429A (en) 2004-11-01
JP5175871B2 (ja) 2013-04-03
CN101812711A (zh) 2010-08-25
JP4805141B2 (ja) 2011-11-02
EP1602127A2 (en) 2005-12-07
WO2004081261A3 (en) 2005-05-26
US8252167B2 (en) 2012-08-28
TWI498451B (zh) 2015-09-01
CN101812711B (zh) 2011-11-16
JP2010106369A (ja) 2010-05-13
US7875158B2 (en) 2011-01-25
JP2006519932A (ja) 2006-08-31
US20060113185A1 (en) 2006-06-01
US20110073482A1 (en) 2011-03-31
KR20050114226A (ko) 2005-12-05
TW201131012A (en) 2011-09-16
TWI341875B (en) 2011-05-11
WO2004081261A2 (en) 2004-09-23

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