JP4789809B2 - ナノ結晶をドーピングしたマトリックス - Google Patents

ナノ結晶をドーピングしたマトリックス Download PDF

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Publication number
JP4789809B2
JP4789809B2 JP2006549608A JP2006549608A JP4789809B2 JP 4789809 B2 JP4789809 B2 JP 4789809B2 JP 2006549608 A JP2006549608 A JP 2006549608A JP 2006549608 A JP2006549608 A JP 2006549608A JP 4789809 B2 JP4789809 B2 JP 4789809B2
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polymer layer
polymer
nanocrystals
nanocrystal
refractive index
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Expired - Lifetime
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Japanese (ja)
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JP2007524119A5 (https=
JP2007524119A (ja
Inventor
ジェイ． ウォーレス パース，
チアン チェン，
ボブ ダブロー，
ビル フリーマン，
エリック シー． シャー，
ジェフリー エー． ホワイトフォード，
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
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    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
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    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
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    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
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    • C09D7/66—Additives characterised by particle size
    • C09D7/67—Particle size smaller than 100 nm
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G02B3/00—Simple or compound lenses
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/715—On an organic substrate
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    • Y10S977/00—Nanotechnology
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    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/753—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. with polymeric or organic binder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/834—Optical properties of nanomaterial, e.g. specified transparency, opacity, or index of refraction
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23—Sheet including cover or casing
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  • Inorganic Chemistry (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2006549608A 2004-01-15 2005-01-13 ナノ結晶をドーピングしたマトリックス Expired - Lifetime JP4789809B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US53696204P 2004-01-15 2004-01-15
US60/536,962 2004-01-15
US63578404P 2004-12-15 2004-12-15
US60/635,784 2004-12-15
PCT/US2005/001141 WO2005067524A2 (en) 2004-01-15 2005-01-13 Nanocrystal doped matrixes

Publications (3)

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JP2007524119A JP2007524119A (ja) 2007-08-23
JP2007524119A5 JP2007524119A5 (https=) 2008-02-28
JP4789809B2 true JP4789809B2 (ja) 2011-10-12

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JP2006549608A Expired - Lifetime JP4789809B2 (ja) 2004-01-15 2005-01-13 ナノ結晶をドーピングしたマトリックス

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US (3) US7374807B2 (https=)
EP (1) EP1733077B1 (https=)
JP (1) JP4789809B2 (https=)
WO (1) WO2005067524A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12145890B2 (en) 2022-12-16 2024-11-19 Raytheon Company Coated (core-shell) nanoparticles for nanocomposite optical ceramics

Families Citing this family (285)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
EP1733077B1 (en) * 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7773404B2 (en) * 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US7750352B2 (en) * 2004-08-10 2010-07-06 Pinion Technologies, Inc. Light strips for lighting and backlighting applications
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7602116B2 (en) * 2005-01-27 2009-10-13 Advanced Optoelectronic Technology, Inc. Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
KR100661696B1 (ko) * 2005-02-22 2006-12-26 삼성전자주식회사 이종 구조의 반도체 나노 와이어 및 그의 제조방법
KR100682874B1 (ko) * 2005-05-02 2007-02-15 삼성전기주식회사 백색 ｌｅｄ
JP2006310710A (ja) * 2005-05-02 2006-11-09 Sony Corp 半導体発光素子
WO2006124625A2 (en) * 2005-05-12 2006-11-23 Nanosys, Inc. Use of nanoparticles in film formation and as solder
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9297092B2 (en) * 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) * 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
KR101106134B1 (ko) * 2005-07-11 2012-01-20 서울옵토디바이스주식회사 나노와이어 형광체를 채택한 발광소자
EP1908126A4 (en) * 2005-07-13 2010-08-18 Evident Technologies Inc LUMINAIRE DIODE WITH SEMICONDUCTOR NANOCRYSTAL COMPLEXES
GB2472542B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
JP4415972B2 (ja) 2005-09-22 2010-02-17 ソニー株式会社 金属酸化物ナノ粒子の製造方法
GB0522027D0 (en) * 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
US7777355B2 (en) * 2005-11-17 2010-08-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared-blocking encapsulant with organometallic colloids
US20070108463A1 (en) * 2005-11-17 2007-05-17 Chua Janet B Y Light-emitting diode with UV-blocking nano-particles
DE102005062674B4 (de) * 2005-12-23 2011-06-16 Technische Universität Darmstadt Kompositzusammensetzung für eine Solarzelle, p-i-n-Halbleiterstruktur, enthaltend diese Zusammensetzung, Solarzelle und Verfahren zur Herstellung einer Kompositzusammensetzung
CN101000384A (zh) * 2006-01-13 2007-07-18 鸿富锦精密工业（深圳）有限公司 透镜及其制造方法
ES2374438T3 (es) 2006-01-18 2012-02-16 Sparkxis B.V. Materiales monoméricos y poliméricos novedosos.
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US9951438B2 (en) 2006-03-07 2018-04-24 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
EP2041478B1 (en) * 2006-03-07 2014-08-06 QD Vision, Inc. An article including semiconductor nanocrystals
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
KR100773993B1 (ko) * 2006-03-10 2007-11-08 (주)케이디티 광여기 시트
KR100728940B1 (ko) * 2006-03-10 2007-06-14 (주)케이디티 광여기 시트
US7524746B2 (en) * 2006-03-13 2009-04-28 Evident Technologies, Inc. High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor
WO2007117698A2 (en) 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
US20070262294A1 (en) * 2006-05-15 2007-11-15 X-Rite, Incorporated Light source including quantum dot material and apparatus including same
US9212056B2 (en) * 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
US20070295968A1 (en) * 2006-06-27 2007-12-27 Kheng Leng Tan Electroluminescent device with high refractive index and UV-resistant encapsulant
KR100901947B1 (ko) * 2006-07-14 2009-06-10 삼성전자주식회사 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법
US9505978B2 (en) 2006-08-11 2016-11-29 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystals and devices
WO2008024342A2 (en) * 2006-08-24 2008-02-28 Ngimat, Co Optical coating
WO2008043519A1 (en) * 2006-10-10 2008-04-17 Lexedis Lighting Gmbh Phosphor-converted light emitting diode
JP4349456B2 (ja) 2006-10-23 2009-10-21 ソニー株式会社 固体撮像素子
US7737636B2 (en) * 2006-11-09 2010-06-15 Intematix Corporation LED assembly with an LED and adjacent lens and method of making same
WO2008063658A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US20100001648A1 (en) * 2006-12-12 2010-01-07 Inverto Nv Led lighting that has continuous and adjustable color temperature (ct), while maintaining a high cri
US20080246076A1 (en) * 2007-01-03 2008-10-09 Nanosys, Inc. Methods for nanopatterning and production of nanostructures
US20090136785A1 (en) * 2007-01-03 2009-05-28 Nanosys, Inc. Methods for nanopatterning and production of magnetic nanostructures
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US7680553B2 (en) * 2007-03-08 2010-03-16 Smp Logic Systems Llc Methods of interfacing nanomaterials for the monitoring and execution of pharmaceutical manufacturing processes
US20100155749A1 (en) * 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US20100110728A1 (en) * 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
EP2121872B1 (en) * 2007-03-19 2015-12-09 Nanosys, Inc. Methods for encapsulating nanocrystals
TWI334660B (en) * 2007-03-21 2010-12-11 Lextar Electronics Corp Surface mount type light emitting diode package device and light emitting element package device
US8563348B2 (en) * 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US7902748B2 (en) * 2007-05-31 2011-03-08 Global Oled Technology Llc Electroluminescent device having improved light output
WO2009014590A2 (en) 2007-06-25 2009-01-29 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
US7989153B2 (en) * 2007-07-11 2011-08-02 Qd Vision, Inc. Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8297061B2 (en) * 2007-08-02 2012-10-30 Cree, Inc. Optoelectronic device with upconverting luminophoric medium
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
WO2009027172A1 (en) * 2007-08-31 2009-03-05 Unilever Plc Printing formulations
US8092719B2 (en) 2007-09-04 2012-01-10 Samsung Electronics Co., Ltd. Nanocrystal-metal oxide composites and preparation method thereof
EP2034002B1 (en) * 2007-09-04 2013-07-17 Samsung Electronics Co., Ltd. Nanoncrystal-metal oxide composites and preparation method thereof
KR20090034412A (ko) * 2007-10-04 2009-04-08 삼성전자주식회사 발광 칩 및 이의 제조 방법
US8784701B2 (en) * 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
EP2250212A1 (en) * 2008-02-25 2010-11-17 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
WO2009145813A1 (en) 2008-03-04 2009-12-03 Qd Vision, Inc. Particles including nanoparticles, uses thereof, and methods
KR101995369B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
FR2930786B1 (fr) * 2008-05-05 2010-12-31 Commissariat Energie Atomique Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009151515A1 (en) 2008-05-06 2009-12-17 Qd Vision, Inc. Solid state lighting devices including quantum confined semiconductor nanoparticles
US8212469B2 (en) 2010-02-01 2012-07-03 Abl Ip Holding Llc Lamp using solid state source and doped semiconductor nanophosphor
US8028537B2 (en) 2009-05-01 2011-10-04 Abl Ip Holding Llc Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity
US7980728B2 (en) * 2008-05-27 2011-07-19 Abl Ip Holding Llc Solid state lighting using light transmissive solid in or forming optical integrating volume
US7845825B2 (en) * 2009-12-02 2010-12-07 Abl Ip Holding Llc Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light
US8172424B2 (en) * 2009-05-01 2012-05-08 Abl Ip Holding Llc Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity
US8021008B2 (en) * 2008-05-27 2011-09-20 Abl Ip Holding Llc Solid state lighting using quantum dots in a liquid
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
GB0813273D0 (en) * 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) * 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
US20100059771A1 (en) * 2008-09-10 2010-03-11 Chris Lowery Multi-layer led phosphors
US20100065120A1 (en) * 2008-09-12 2010-03-18 Solfocus, Inc. Encapsulant with Modified Refractive Index
RU2510333C2 (ru) * 2008-10-28 2014-03-27 Басф Се Наношкальные поглотители ик-излучения в многослойных формованных изделиях
GB0820101D0 (en) * 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
EP2364509A1 (en) * 2008-11-07 2011-09-14 IDD Aerospace Corporation Lighting systems
US8642991B2 (en) * 2008-11-11 2014-02-04 Samsung Electronics Co., Ltd. Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition
US8405111B2 (en) * 2008-11-13 2013-03-26 National University Corporation Nagoya University Semiconductor light-emitting device with sealing material including a phosphor
GB0821122D0 (en) * 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
US8540889B1 (en) 2008-11-19 2013-09-24 Nanosys, Inc. Methods of generating liquidphobic surfaces
US7916065B1 (en) 2008-12-12 2011-03-29 Raytheon Company Countermeasure system and method using quantum dots
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US8343575B2 (en) * 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US7804103B1 (en) 2009-01-07 2010-09-28 Lednovation, Inc. White lighting device having short wavelength semiconductor die and trichromatic wavelength conversion layers
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US20100264371A1 (en) * 2009-03-19 2010-10-21 Nick Robert J Composition including quantum dots, uses of the foregoing, and methods
KR101753740B1 (ko) 2009-04-28 2017-07-04 삼성전자주식회사 광학 재료, 광학 부품 및 방법
CN104387772B (zh) 2009-05-01 2017-07-11 纳米系统公司 用于纳米结构体分散的官能化基质
KR101644047B1 (ko) * 2009-07-09 2016-08-01 삼성전자 주식회사 발광체-고분자 복합체용 조성물, 발광체-고분자 복합체 및 상기 발광체-고분자 복합체를 포함하는 발광 소자
WO2011008881A2 (en) 2009-07-14 2011-01-20 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
US8350223B2 (en) * 2009-07-31 2013-01-08 Raytheon Company Quantum dot based radiation source and radiometric calibrator using the same
KR101869923B1 (ko) 2009-08-14 2018-07-20 삼성전자주식회사 조명 장치, 조명 장치용 광학 요소, 및 방법
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
CN102482457B (zh) 2009-09-09 2015-04-15 Qd视光有限公司 包含纳米颗粒的颗粒、其应用和方法
WO2011031876A1 (en) 2009-09-09 2011-03-17 Qd Vision, Inc. Formulations including nanoparticles
US8207554B2 (en) 2009-09-11 2012-06-26 Soraa, Inc. System and method for LED packaging
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
US8575642B1 (en) 2009-10-30 2013-11-05 Soraa, Inc. Optical devices having reflection mode wavelength material
US20110127555A1 (en) * 2009-12-02 2011-06-02 Renaissance Lighting, Inc. Solid state light emitter with phosphors dispersed in a liquid or gas for producing high cri white light
US8217406B2 (en) * 2009-12-02 2012-07-10 Abl Ip Holding Llc Solid state light emitter with pumped nanophosphors for producing high CRI white light
US9163802B2 (en) * 2009-12-02 2015-10-20 Abl Ip Holding Llc Lighting fixtures using solid state device and remote phosphors to produce white light
US8118454B2 (en) 2009-12-02 2012-02-21 Abl Ip Holding Llc Solid state lighting system with optic providing occluded remote phosphor
KR101054394B1 (ko) * 2009-12-15 2011-08-04 엘지전자 주식회사 반도체 나노결정을 이용한 태양전지 모듈
EP2528990B1 (en) 2010-01-28 2017-04-26 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Lighting devices with prescribed colour emission
US9719012B2 (en) * 2010-02-01 2017-08-01 Abl Ip Holding Llc Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
KR100969100B1 (ko) 2010-02-12 2010-07-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
US8517550B2 (en) * 2010-02-15 2013-08-27 Abl Ip Holding Llc Phosphor-centric control of color of light
US8330373B2 (en) * 2010-02-15 2012-12-11 Abl Ip Holding Llc Phosphor-centric control of color characteristic of white light
JP4949525B2 (ja) 2010-03-03 2012-06-13 シャープ株式会社 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法
WO2011114253A1 (en) 2010-03-16 2011-09-22 Koninklijke Philips Electronics N.V. Lighting apparatus
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
US8803201B2 (en) * 2011-01-31 2014-08-12 Cree, Inc. Solid state lighting component package with reflective layer
US8089207B2 (en) 2010-05-10 2012-01-03 Abl Ip Holding Llc Lighting using solid state device and phosphors to produce light approximating a black body radiation spectrum
US20110291046A1 (en) * 2010-05-26 2011-12-01 Multisorb Technologies, Inc. Silicone polymer desiccant composition and method of making the same
US8871175B2 (en) 2010-10-01 2014-10-28 The Boeing Company Nanomaterial having tunable infrared absorption characteristics and associated method of manufacture
US8573804B2 (en) * 2010-10-08 2013-11-05 Guardian Industries Corp. Light source, device including light source, and/or methods of making the same
US9525092B2 (en) 2010-11-05 2016-12-20 Pacific Light Technologies Corp. Solar module employing quantum luminescent lateral transfer concentrator
KR102496406B1 (ko) 2010-11-10 2023-02-06 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
US9091399B2 (en) * 2010-11-11 2015-07-28 Bridgelux, Inc. Driver-free light-emitting device
US8541951B1 (en) 2010-11-17 2013-09-24 Soraa, Inc. High temperature LED system using an AC power source
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
WO2012088404A1 (en) 2010-12-23 2012-06-28 Qd Vision, Inc. Quantum dot containing optical element
EP2675618B1 (en) * 2011-02-17 2018-07-04 Vanderbilt University Enhancement of light emission quantum yield in treated broad spectrum nanocrystals
CN102646761B (zh) * 2011-02-21 2014-10-15 展晶科技(深圳)有限公司 Led封装制程
US8455898B2 (en) 2011-03-28 2013-06-04 Osram Sylvania Inc. LED device utilizing quantum dots
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
USD720310S1 (en) 2011-06-17 2014-12-30 Soraa, Inc. Triangular semiconductor die
US9293197B2 (en) 2011-08-15 2016-03-22 Lockheed Martin Corporation Reconfigurable phase change material masks for electro-optical compressive sensing
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
US9488324B2 (en) 2011-09-02 2016-11-08 Soraa, Inc. Accessories for LED lamp systems
US9159872B2 (en) * 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013078251A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Stress-resistant component for use with quantum dots
KR101340951B1 (ko) * 2012-01-20 2013-12-13 한국과학기술원 미세구조물의 유효굴절률을 이용한 굴절률 분포형 렌즈 및 그 제조방법
EP2812738B1 (en) * 2012-02-09 2016-10-12 Dow Corning Corporation Gradient polymer structures and methods
KR101546937B1 (ko) 2012-04-04 2015-08-25 삼성전자 주식회사 백라이트 유닛용 필름 및 이를 포함하는 백라이트 유닛과 액정 디스플레이 장치
KR101413660B1 (ko) 2012-04-13 2014-07-04 홍익대학교 산학협력단 발광다이오드용 양자점-고분자 복합체 플레이트 및 그 제조 방법
US8985794B1 (en) 2012-04-17 2015-03-24 Soraa, Inc. Providing remote blue phosphors in an LED lamp
CN103375708B (zh) * 2012-04-26 2015-10-28 展晶科技(深圳)有限公司 发光二极管灯源装置
US9929325B2 (en) 2012-06-05 2018-03-27 Samsung Electronics Co., Ltd. Lighting device including quantum dots
SG11201408338QA (en) * 2012-06-20 2015-01-29 Univ Nanyang Tech A composite material
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
CN104411745B9 (zh) * 2012-06-26 2017-10-10 株式会社尼康 包含矿物纳米颗粒的液体可聚合组合物及其生产光学物品的用途
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
DE102012106984A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
ES2720742T3 (es) * 2012-08-24 2019-07-24 Signify Holding Bv Un conjunto electroluminiscente, una lámpara y una luminaria
JP6003402B2 (ja) * 2012-08-28 2016-10-05 住友大阪セメント株式会社 光半導体発光装置、照明器具、及び表示装置
DE102012215792A1 (de) * 2012-09-06 2014-03-06 Zumtobel Lighting Gmbh Elektrooptisches Bauelement mit Quantendot-Struktur
US8786179B2 (en) * 2012-09-17 2014-07-22 Universal Display Corporation Light emitting device comprising phosphorescent materials for white light generation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
CN104755586B (zh) * 2012-10-25 2018-02-06 皇家飞利浦有限公司 用于硅酮中的量子点的基于pdms的配体
CN104755585A (zh) * 2012-10-25 2015-07-01 皇家飞利浦有限公司 用于硅酮中的量子点的基于pdms的配体
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
US20140170786A1 (en) * 2012-12-13 2014-06-19 Juanita N. Kurtin Ceramic composition having dispersion of nano-particles therein and methods of fabricating same
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US9340446B1 (en) 2013-02-04 2016-05-17 Lockheed Martin Corporation Optical apparatus and method of forming a gradient index device
US10202543B2 (en) 2013-03-05 2019-02-12 Osram Opto Semiconductors Gmbh Quantum dot (QD) delivery method
US9680072B2 (en) 2013-03-05 2017-06-13 Pacific Light Technologies Corp. Quantum dot (QD) delivery method
US9133394B2 (en) 2013-03-14 2015-09-15 Nanosys, Inc. Polyhedral oligomeric silsesquioxane nanocrystal stabilization ligands
KR102203599B1 (ko) * 2013-03-14 2021-01-14 나노시스, 인크. 무용매 양자점 교환 방법
CN105189584A (zh) 2013-03-14 2015-12-23 纳米系统公司 用于纳米晶体的烷基-酸配体
US9447299B2 (en) * 2013-05-02 2016-09-20 Voxtel, Inc Inks for 3D printing gradient refractive index (GRIN) optical components
WO2015002995A1 (en) 2013-07-01 2015-01-08 Western Washington University Photoluminescent semiconductor nanocrystal-based luminescent solar concentrators
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9666766B2 (en) 2013-08-21 2017-05-30 Pacific Light Technologies Corp. Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell
CN105658762B (zh) 2013-10-17 2017-11-28 株式会社村田制作所 纳米粒子材料以及发光器件
WO2015056750A1 (ja) 2013-10-17 2015-04-23 株式会社村田製作所 ナノ粒子材料、及び発光デバイス
WO2015057930A1 (en) 2013-10-17 2015-04-23 Nanosys, Inc. Light emitting diode (led) devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9927649B2 (en) 2013-11-05 2018-03-27 Nanosys, Inc. Backlight unit for display devices
KR102122359B1 (ko) * 2013-12-10 2020-06-12 삼성전자주식회사 발광장치 제조방법
WO2015140642A2 (en) * 2014-03-18 2015-09-24 Nanoco Technologies, Ltd Quantum dot compositions
US9703031B2 (en) * 2014-04-28 2017-07-11 Rambus Delaware Llc Light guide and lighting assembly with array of rotated micro-optical elements
JP6158248B2 (ja) * 2014-05-27 2017-07-05 ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイＴｈｅ Ｂｏａｒｄ Ｏｆ Ｔｒｕｓｔｅｅｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｉｌｌｉｎｏｉｓ ナノ構造材料の方法および素子
JP6656183B2 (ja) 2014-07-03 2020-03-04 スリーエム イノベイティブ プロパティズ カンパニー エッジ侵入を低減し色安定性を改善した量子ドット物品
EP3169721B1 (en) 2014-07-16 2019-10-09 Nanosys, Inc. Silicone ligands for quantum dots
CN106716748B (zh) 2014-09-23 2020-09-04 赫普塔冈微光有限公司 紧凑、功率有效的堆叠宽带光学发射器
US10437083B1 (en) 2014-10-20 2019-10-08 Lockheed Martin Corporation Individually addressable infrared mask array
CN104360425B (zh) * 2014-11-24 2017-02-22 京东方科技集团股份有限公司 一种光学膜层、发光器件及显示装置
WO2016094723A1 (en) * 2014-12-11 2016-06-16 Schmutz Ip, Llc Curable nano-composites for additive manufacturing
CN107406602B (zh) 2015-03-12 2020-12-22 株式会社Lg化学 用于光学膜的组合物和包含其的光学膜
US10519366B2 (en) 2015-04-16 2019-12-31 3M Innovative Properties Company Quantum dot article with thiol-epoxy matrix
US10233387B2 (en) 2015-04-16 2019-03-19 3M Innovative Properties Company Quantum dot article with thiol-alkene-epoxy matrix
US10984735B2 (en) 2015-04-17 2021-04-20 Nanosys, Inc. White point uniformity in display devices
US10516082B2 (en) * 2015-07-07 2019-12-24 Lumileds Holding B.V. Device for emitting light
US10099247B2 (en) * 2015-07-14 2018-10-16 Honeywell International Inc. Anti-reflective coating for sapphire
KR20180052679A (ko) 2015-09-09 2018-05-18 나노시스, 인크. 청색 방출을 갖는 고 발광 무카드뮴 나노결정
CN108026444B (zh) 2015-09-15 2020-08-04 3M创新有限公司 添加剂稳定的复合纳米粒子
JP2018529832A (ja) 2015-09-15 2018-10-11 スリーエム イノベイティブ プロパティズ カンパニー 添加剤安定化複合ナノ粒子
EP3377591A1 (en) 2015-11-18 2018-09-26 3M Innovative Properties Company Copolymeric stabilizing carrier fluid for nanoparticles
KR102618409B1 (ko) 2015-12-23 2023-12-27 삼성전자주식회사 양자점-폴리머 복합체 및 이를 포함하는 소자
WO2017117160A1 (en) 2015-12-31 2017-07-06 3M Innovative Properties Company Article comprising particles with quantum dots
US9658489B1 (en) 2015-12-31 2017-05-23 Nanosys, Inc. Backlight units for display devices
US10815424B2 (en) * 2015-12-31 2020-10-27 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. One-step process for synthesis of core shell nanocrystals
WO2017116820A1 (en) 2015-12-31 2017-07-06 3M Innovative Properties Company Curable quantum dot compositions and articles
CN108699434A (zh) 2016-01-19 2018-10-23 纳米系统公司 具有GaP和AlP壳的INP量子点及其制造方法
WO2017142782A1 (en) 2016-02-17 2017-08-24 3M Innovative Properties Company Quantum dots with stabilizing fluorochemical copolymers
EP3419927B1 (en) 2016-02-26 2023-11-22 Shoei Chemical Inc. Low cadmium content nanostructure compositions and uses thereof
KR102367208B1 (ko) 2016-04-26 2022-02-23 나노시스, 인크. 두꺼운 쉘 코팅을 갖는 안정된 inp 양자점 및 그 제조 방법
WO2017189855A1 (en) * 2016-04-27 2017-11-02 President And Fellows Of Harvard College Anti-fouling endoscopes and uses thereof
EP3242333B1 (en) * 2016-05-03 2020-09-09 Nokia Technologies Oy An apparatus and method of forming an apparatus comprising a graphene field effect transistor
US9969647B2 (en) 2016-05-17 2018-05-15 Lockheed Martin Energy, Llc Glass composites having a gradient index of refraction and methods for production thereof
JP7062600B2 (ja) 2016-05-19 2022-05-06 ナノシス・インク． 高輝度ナノ構造体のためのコア／シェル量子ドット形態の改良法
CA3026102A1 (en) 2016-06-06 2017-12-14 Nanosys, Inc. Method for synthesizing core shell nanocrystals at high temperatures
US20170373232A1 (en) 2016-06-27 2017-12-28 Nanosys, Inc. Methods for Buffered Coating of Nanostructures
US11345849B2 (en) 2016-07-20 2022-05-31 3M Innovative Properties Company Stabilizing styrenic polymer for quantum dots
CN109476987A (zh) 2016-07-20 2019-03-15 3M创新有限公司 用于量子点的稳定苯乙烯系聚合物
US9908808B1 (en) 2016-08-18 2018-03-06 Lockheed Martin Corporation Ternary glass materials with low refractive index variability
JP6883094B2 (ja) * 2016-09-12 2021-06-09 ルミレッズ リミテッド ライアビリティ カンパニー メラノピックスペクトル量を低減した照明システム
US11320577B2 (en) 2016-10-31 2022-05-03 Nanosys, Inc. Radiation absorbing element for increasing color gamut of quantum dot based display devices
US20180223182A1 (en) 2017-01-31 2018-08-09 Nanosys, Inc. Rapid thickening of aminosilicones to promote emulsion stability and adhesion of uv-curable quantum dot enhancement film emulsions
CN110799621A (zh) 2017-05-10 2020-02-14 纳米系统公司 作为量子点树脂预混料的乳化添加剂的有机硅共聚物
WO2018209007A1 (en) 2017-05-10 2018-11-15 Nanosys, Inc. In-situ cross-linking of emulsified quantum dot-containing domains within a carrier resin
US20200140467A1 (en) 2017-05-18 2020-05-07 Sk Chemicals Co., Ltd. Phosphine precursor for preparing quantum dot and quantum dot prepared therefrom
KR102664513B1 (ko) 2017-06-05 2024-05-13 소에이 가가쿠 고교 가부시키가이샤 양자 점-수지 농축물 및 프리믹스의 산 안정화
KR102662811B1 (ko) 2017-06-07 2024-05-02 소에이 가가쿠 고교 가부시키가이샤 수지 필름에서의 향상된 양자 점 신뢰성을 위한 티올화된 친수성 리간드
US10919770B2 (en) 2017-06-23 2021-02-16 Nanosys, Inc. Homogeneous anaerobically stable quantum dot concentrates
WO2019018301A1 (en) 2017-07-16 2019-01-24 Massachusetts Institute Of Technology MICRO NEEDLE TATTOO STAMPS AND USE THEREOF
CN111164129B (zh) 2017-08-16 2024-03-12 昭荣化学工业株式会社 具有增强的分散性和改善的性能的peg基配体
US11092850B2 (en) 2017-08-25 2021-08-17 Nanosys, Inc. Using multiple excitation wavelengths in nanostructure based display devices
US11029559B2 (en) 2017-08-25 2021-06-08 Nanosys, Inc. Nanostructure based display devices
US10935842B2 (en) 2017-08-25 2021-03-02 Nanosys, Inc. Nanostructure based display devices
US10698265B1 (en) * 2017-10-06 2020-06-30 E Ink California, Llc Quantum dot film
WO2019072938A1 (en) 2017-10-10 2019-04-18 Katholieke Universiteit Leuven PLATE-GUIDE LIGHT
WO2019084135A1 (en) 2017-10-25 2019-05-02 Nanosys, Inc. STABLE INP QUANTUM POINTS HAVING THICK ENVELOPE COATING AND PROCESS FOR PRODUCTION THEREOF
TWI778156B (zh) 2017-10-27 2022-09-21 美商納諾西斯有限公司 應用多官能配位體改善量子點墨水的性能及穩定性
US20190273178A1 (en) 2018-03-05 2019-09-05 Nanosys, Inc. Decreased Photon Reabsorption in Emissive Quantum Dots
EP3844240B1 (en) 2018-05-30 2024-02-14 Shoei Chemical Inc. Method for synthesis of blue-emitting znse1-xtex alloy nanocrystals
KR102659274B1 (ko) 2018-06-05 2024-04-18 삼성전자주식회사 양자점, 이를 포함한 조성물 또는 복합체, 그리고 이를 포함한 전자 소자
CN110655922B (zh) 2018-06-29 2024-02-27 昭荣化学工业株式会社 使用In3+盐作为掺杂剂的ZnSe量子点的波长调谐
EP3824218B1 (en) 2018-07-24 2026-04-29 Shoei Chemical Inc. Methods of improving efficiency of displays using quantum dots with integrated optical elements
WO2020040982A1 (en) 2018-08-21 2020-02-27 Nanosys, Inc. Quantum dots with charge-transporting ligands
US11428988B2 (en) 2018-08-31 2022-08-30 Nanosys, Inc. Increasing color gamut performance and efficiency in quantum dot color conversion layers
DE102018007878A1 (de) * 2018-10-07 2020-04-09 Michael Licht NlR LED
TWI827791B (zh) 2019-02-05 2024-01-01 日商昭榮化學工業股份有限公司 以熔融鹽化學合成無機奈米結構之方法、奈米結構及包含該奈米結構之顯示裝置
CN109920901A (zh) * 2019-04-03 2019-06-21 深圳市磊立捷光电有限公司 一种近红外无红曝点的led灯珠及其制作方法
KR20210154190A (ko) 2019-04-19 2021-12-20 나노시스, 인크. 가요성 전계발광 디바이스
KR102792752B1 (ko) 2019-05-08 2025-04-07 소에이 가가쿠 고교 가부시키가이샤 광 추출 효율이 개선된 나노구조체 기반 디스플레이 디바이스들
WO2020233859A1 (en) * 2019-05-23 2020-11-26 Sony Corporation Nanocrystal emissive materials, light emitting element, and projector light source based on these materials
KR102071689B1 (ko) * 2019-07-09 2020-01-30 주식회사 신아티앤씨 양자점층을 포함하는 광변환 필름, 상기 광변환 필름을 포함하는 디스플레이 장치용 백라이트 유닛, 및 양자점 분산액의 제조방법
KR20220035152A (ko) 2019-07-11 2022-03-21 나노시스, 인크. 입방체 형상 및 플루오라이드 패시베이션을 갖는 청색 발광 나노결정들
US12360294B2 (en) 2019-09-03 2025-07-15 National Research Council Of Canada 3D printed graded refractive index device
EP4073202B1 (en) 2020-01-06 2023-12-06 Shoei Chemical Inc. Rohs compliant quantum dot films
JP7730088B2 (ja) 2020-01-08 2025-08-27 昭栄化学工業株式会社 ドナー－アクセプターリガンドを有する量子ドット
KR102814512B1 (ko) * 2020-06-02 2025-05-30 삼성디스플레이 주식회사 양자점 조성물, 발광 소자 및 이의 제조 방법
KR20210149956A (ko) * 2020-06-02 2021-12-10 삼성디스플레이 주식회사 양자점 조성물, 발광 소자 및 이의 제조 방법
KR20230091109A (ko) 2020-10-22 2023-06-22 나노시스, 인크. 하이브리드 수송층을 갖는 전계발광 디바이스
JP2023551765A (ja) 2020-10-22 2023-12-13 ナノシス・インク． 有機輸送層を持つ電界発光デバイス
WO2023287886A1 (en) 2021-07-13 2023-01-19 Nanosys, Inc. Tunable illumination device
KR20260037168A (ko) 2022-01-19 2026-03-17 소에이 가가쿠 고교 가부시키가이샤 Uv-경화성 양자 도트 제형
US20250215309A1 (en) 2022-03-25 2025-07-03 Shoei Chemical Inc. Silica composite microparticles comprising nanostructures
JP2025518484A (ja) 2022-05-09 2025-06-17 昭栄化学工業株式会社 マイクロｌｅｄベースのディスプレイ装置

Family Cites Families (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US409377A (en) * 1889-08-20 Territory
US577433A (en) * 1897-02-23 Door-alarm
DE2448338C3 (de) 1974-10-10 1978-10-26 Bayer Ag, 5090 Leverkusen Stabilisierte Chalkogenide auf der Basis von Cadmium
US4181753A (en) 1976-08-19 1980-01-01 Brown, Boveri & Cie Aktiengesellschaft Process for the production of electroluminescent powders for display panels and coating the powders with zinc phosphate
JPS5467698A (en) 1977-11-08 1979-05-31 Matsushita Electric Ind Co Ltd Method of reducing resistance of conductive material
US4263339A (en) 1978-05-17 1981-04-21 Brown, Boveri & Cie Aktiengesellschaft Process for the production of electroluminescent powders for display panels
US4263051A (en) 1978-06-12 1981-04-21 Ppg Industries, Inc. Soft-settling silica flatting agent
US4258060A (en) * 1979-08-13 1981-03-24 E. I. Du Pont De Nemours And Company Substituted trichloropropylureas as plant disease control agents
US4356098A (en) 1979-11-08 1982-10-26 Ferrofluidics Corporation Stable ferrofluid compositions and method of making same
US5189337A (en) 1988-09-09 1993-02-23 Hitachi, Ltd. Ultrafine particles for use in a cathode ray tube or an image display face plate
JP2525656B2 (ja) 1988-12-08 1996-08-21 化成オプトニクス株式会社 蛍光体および蛍光体の表面処理方法
US5023139A (en) 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
US5196229A (en) 1989-08-21 1993-03-23 Gte Products Corporation Coated phosphor articles
JPH075883B2 (ja) 1990-04-21 1995-01-25 日亜化学工業株式会社 蛍光体の再生方法
US5376307A (en) 1990-08-09 1994-12-27 E. I. Du Pont De Nemours And Company Fluorocarbon paint composition
US5124278A (en) 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5230957A (en) 1991-07-24 1993-07-27 E. I. Du Pont De Nemours And Company Hollow filament cross-sections containing four continuous voids
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
WO1993010564A1 (en) 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5260957A (en) 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
US5518808A (en) 1992-12-18 1996-05-21 E. I. Du Pont De Nemours And Company Luminescent materials prepared by coating luminescent compositions onto substrate particles
US5385961A (en) 1993-01-27 1995-01-31 General Electric Company Amino silicone/phosphite compositions
JP2959928B2 (ja) 1993-06-23 1999-10-06 チタン工業株式会社 白色導電性樹脂組成物
DE4401566A1 (de) * 1994-01-20 1995-07-27 Henkel Kgaa Verfahren zur gemeinsamen Vorbehandlung von Stahl, verzinktem Stahl, Magnesium und Aluminium vor der Verbindung mit Gummi
US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
DE4432035A1 (de) 1994-09-09 1996-03-14 Philips Patentverwaltung Beschichtungsverfahren für Lumineszenzpulver, Luminenzenzpulver und beschichteter Gegenstand
AU3894595A (en) 1994-11-08 1996-05-31 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
EP0763364B1 (en) * 1995-09-14 2003-07-16 Nippon Shokubai Co., Ltd. Absorbent composite, absorbent article and methods for their production
US5707139A (en) * 1995-11-01 1998-01-13 Hewlett-Packard Company Vertical cavity surface emitting laser arrays for illumination
JP2907128B2 (ja) * 1996-07-01 1999-06-21 日本電気株式会社 電界効果型トランジスタ及びその製造方法
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US5851416A (en) 1997-02-12 1998-12-22 Ferrofluidics Corporation Stable polysiloxane ferrofluid compositions and method of making same
AU6665598A (en) 1997-02-24 1998-09-09 Superior Micropowders Llc Sulfur-containing phosphor powders, methods for making phosphor powders and devices incorporating same
JP2000509912A (ja) * 1997-03-03 2000-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 白色光発光ダイオード
US6135118A (en) 1997-05-12 2000-10-24 Dailey; James P. Treatment with magnetic fluids
US5958591A (en) 1997-06-30 1999-09-28 Minnesota Mining And Manufacturing Company Electroluminescent phosphor particles encapsulated with an aluminum oxide based multiple oxide coating
US5973035A (en) * 1997-10-31 1999-10-26 Xyleco, Inc. Cellulosic fiber composites
US6482672B1 (en) 1997-11-06 2002-11-19 Essential Research, Inc. Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US5985173A (en) 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6147363A (en) 1997-12-25 2000-11-14 Showa Denko K.K. Nitride semiconductor light-emitting device and manufacturing method of the same
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US6294800B1 (en) * 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6864626B1 (en) 1998-06-03 2005-03-08 The Regents Of The University Of California Electronic displays using optically pumped luminescent semiconductor nanocrystals
EP2306195A3 (en) * 1998-09-18 2012-04-25 Massachusetts Institute of Technology Biological applications of semiconductor nanocrystals
US6426513B1 (en) 1998-09-18 2002-07-30 Massachusetts Institute Of Technology Water-soluble thiol-capped nanocrystals
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6326144B1 (en) 1998-09-18 2001-12-04 Massachusetts Institute Of Technology Biological applications of quantum dots
US6617583B1 (en) 1998-09-18 2003-09-09 Massachusetts Institute Of Technology Inventory control
US6306610B1 (en) 1998-09-18 2001-10-23 Massachusetts Institute Of Technology Biological applications of quantum dots
JP4404489B2 (ja) * 1998-09-18 2010-01-27 マサチューセッツ インスティテュート オブ テクノロジー 水溶性蛍光半導体ナノ結晶
CA2345376C (en) 1998-09-24 2010-03-16 Advanced Research And Technology Institute, Inc. Water-soluble luminescent quantum dots and bioconjugates thereof
US6114038A (en) * 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
EP1141170A1 (en) 1998-12-17 2001-10-10 Isis Innovation Limited Rare earth-activated phosphors
US6696299B1 (en) 1999-05-11 2004-02-24 Massachusetts Institute Of Technology Polarization label for measuring 3-dimensional orientation
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6440213B1 (en) 1999-10-28 2002-08-27 The Regents Of The University Of California Process for making surfactant capped nanocrystals
US6179912B1 (en) 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
WO2001048094A1 (en) 1999-12-24 2001-07-05 Nippon Aerosil Co., Ltd. Surface-modified inorganic oxide powder, process for producing the same, and use thereof
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6819692B2 (en) 2000-03-14 2004-11-16 Massachusetts Institute Of Technology Optical amplifiers and lasers
ATE362615T1 (de) 2000-03-20 2007-06-15 Massachusetts Inst Technology Anorganische teilchenkonjugate
JP3835135B2 (ja) * 2000-07-27 2006-10-18 三菱化学株式会社 アミノ基を結合してなる半導体超微粒子
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
ATE491230T1 (de) 2000-10-04 2010-12-15 Univ Arkansas Synthese von kolloidalen metall chalcogenide nanokristallen
JP2002114928A (ja) * 2000-10-06 2002-04-16 Mitsubishi Chemicals Corp 半導体超微粒子を含有する塗布組成物
JP2002162501A (ja) * 2000-11-28 2002-06-07 Mitsubishi Chemicals Corp 半導体結晶粒子を含有する薄膜状成形体、及びその用途
JP3872327B2 (ja) * 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
DE10063092A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskalige Materialien in Hygiene-Produkten
DE10063090A1 (de) 2000-12-18 2002-06-20 Henkel Kgaa Nanoskaliges ZnO in Hygiene-Produkten
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
JP2002332477A (ja) * 2001-01-18 2002-11-22 Mitsubishi Chemicals Corp フッ化アルキル配位子を結合してなる半導体超微粒子、及びこれを含有する薄膜状成形体
US20020127224A1 (en) * 2001-03-02 2002-09-12 James Chen Use of photoluminescent nanoparticles for photodynamic therapy
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
US6846565B2 (en) * 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
EP1409240B1 (en) 2001-07-20 2012-05-09 Life Technologies Corporation Luminescent nanoparticles and methods for their preparation
AU2002326920B2 (en) * 2001-09-17 2007-09-13 Massachusetts Institute Of Technology Semiconductor nanocrystal composite
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
AU2002365267B2 (en) 2001-10-24 2007-06-14 The Regents Of The University Of California Semiconductor liquid crystal composition and methods for making the same
IL146226A0 (en) * 2001-10-29 2002-12-01 Yissum Res Dev Co Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
JP2003138033A (ja) * 2001-11-01 2003-05-14 Mitsubishi Chemicals Corp 半導体結晶粒子を含有する薄膜状成形体、及びその用途
US7150910B2 (en) * 2001-11-16 2006-12-19 Massachusetts Institute Of Technology Nanocrystal structures
US7282710B1 (en) 2002-01-02 2007-10-16 International Business Machines Corporation Scanning probe microscopy tips composed of nanoparticles and methods to form same
DE10200760A1 (de) * 2002-01-10 2003-07-24 Clariant Gmbh Nanokompositmaterial zur Herstellung von Brechzahlgradientenfolien
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US20040007169A1 (en) 2002-01-28 2004-01-15 Mitsubishi Chemical Corporation Semiconductor nanoparticles and thin film containing the same
EP1478689A1 (en) * 2002-02-19 2004-11-24 Photon-X, Inc. Polymer nanocomposites for optical applications
MY144626A (en) * 2002-03-19 2011-10-14 Univ California Semiconductor-nanocrystal/conjugated polymer thin films
US6711426B2 (en) * 2002-04-09 2004-03-23 Spectros Corporation Spectroscopy illuminator with improved delivery efficiency for high optical density and reduced thermal load
EP1503428B1 (en) * 2002-04-25 2011-08-17 Nichia Corporation Light-emitting device using fluorescent substance
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
CN1653803A (zh) * 2002-05-16 2005-08-10 皇家飞利浦电子股份有限公司 图像传感器器件
US6870311B2 (en) 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
AU2003248074A1 (en) 2002-07-16 2004-02-02 Futaba Corporation Composite nanoparticle and process for producing the same
EP1537187B1 (en) 2002-09-05 2012-08-15 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US7572393B2 (en) 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
EP1590171B1 (en) 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
JP2006521278A (ja) 2003-03-11 2006-09-21 ナノシス・インコーポレイテッド ナノクリスタルを生成するためのプロセスおよびそれによって生成されるナノクリスタル
US7279832B2 (en) * 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
US6935535B2 (en) * 2003-04-10 2005-08-30 Great Bodies Ahead, Inc. Hot wax dispenser
US7776982B2 (en) 2003-06-09 2010-08-17 Daikin Industries, Ltd. Silicon-containing fluorochemical surface-treating agent
KR100619379B1 (ko) 2003-06-27 2006-09-05 삼성전자주식회사 발광소자용 양자점 실리케이트 박막의 제조방법
US6933535B2 (en) 2003-10-31 2005-08-23 Lumileds Lighting U.S., Llc Light emitting devices with enhanced luminous efficiency
WO2005059158A2 (en) 2003-12-15 2005-06-30 Dailey James P Magnetized scleral buckle with polymerizing magnetic polymers
EP1733077B1 (en) 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
JP4653662B2 (ja) 2004-01-26 2011-03-16 京セラ株式会社 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
WO2005110916A2 (en) 2004-05-10 2005-11-24 Evident Technologies Iii-v semiconductor nanocrystal complexes and methods of making same
TW201341440A (zh) 2004-06-08 2013-10-16 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
WO2006022123A1 (ja) 2004-08-26 2006-03-02 Idemitsu Kosan Co., Ltd. 有機ｅｌ表示装置
CA2520670A1 (en) 2004-09-23 2006-03-23 National Research Council Of Canada Nanocrystal coated surfaces
JP5014796B2 (ja) 2004-09-30 2012-08-29 株式会社カネカ ポリマー修飾金属カルコゲン化物ナノ粒子の製造方法
KR100735148B1 (ko) 2004-11-22 2007-07-03 (주)케이디티 백라이트 장치용 광 여기 확산시트, 이를 이용한액정표시용 백라이트 장치
US7518160B2 (en) 2005-10-31 2009-04-14 Kyocera Corporation Wavelength converter, lighting system, and lighting system assembly
JP2007146154A (ja) 2005-10-31 2007-06-14 Kyocera Corp 波長変換器、照明装置および照明装置集合体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12145890B2 (en) 2022-12-16 2024-11-19 Raytheon Company Coated (core-shell) nanoparticles for nanocomposite optical ceramics

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US7374807B2 (en) 2008-05-20
EP1733077B1 (en) 2018-04-18
US20060068154A1 (en) 2006-03-30
US20080020235A1 (en) 2008-01-24
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