JP4731816B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4731816B2
JP4731816B2 JP2004016663A JP2004016663A JP4731816B2 JP 4731816 B2 JP4731816 B2 JP 4731816B2 JP 2004016663 A JP2004016663 A JP 2004016663A JP 2004016663 A JP2004016663 A JP 2004016663A JP 4731816 B2 JP4731816 B2 JP 4731816B2
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JP
Japan
Prior art keywords
insulating film
semiconductor region
electric field
region
floating field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004016663A
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English (en)
Japanese (ja)
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JP2005209983A (ja
JP2005209983A5 (enExample
Inventor
一成 幡手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004016663A priority Critical patent/JP4731816B2/ja
Priority to TW093132685A priority patent/TWI253177B/zh
Priority to US10/998,983 priority patent/US7122875B2/en
Priority to DE102004059620A priority patent/DE102004059620B4/de
Priority to CNB2004100114776A priority patent/CN100472803C/zh
Priority to KR1020050005308A priority patent/KR100639692B1/ko
Publication of JP2005209983A publication Critical patent/JP2005209983A/ja
Publication of JP2005209983A5 publication Critical patent/JP2005209983A5/ja
Application granted granted Critical
Publication of JP4731816B2 publication Critical patent/JP4731816B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
    • E03C1/00—Domestic plumbing installations for fresh water or waste water; Sinks
    • E03C1/12—Plumbing installations for waste water; Basins or fountains connected thereto; Sinks
    • E03C1/26—Object-catching inserts or similar devices for waste pipes or outlets
    • E03C1/264—Separate sieves or similar object-catching inserts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
    • E03C2201/00—Details, devices or methods not otherwise provided for
    • E03C2201/40—Arrangement of water treatment devices in domestic plumbing installations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Public Health (AREA)
  • Water Supply & Treatment (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004016663A 2004-01-26 2004-01-26 半導体装置 Expired - Lifetime JP4731816B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004016663A JP4731816B2 (ja) 2004-01-26 2004-01-26 半導体装置
TW093132685A TWI253177B (en) 2004-01-26 2004-10-28 Semiconductor device
US10/998,983 US7122875B2 (en) 2004-01-26 2004-11-30 Semiconductor device
DE102004059620A DE102004059620B4 (de) 2004-01-26 2004-12-10 Halbleitervorrichtung
CNB2004100114776A CN100472803C (zh) 2004-01-26 2004-12-31 半导体器件
KR1020050005308A KR100639692B1 (ko) 2004-01-26 2005-01-20 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004016663A JP4731816B2 (ja) 2004-01-26 2004-01-26 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010044148A Division JP2010157760A (ja) 2010-03-01 2010-03-01 半導体装置
JP2010224587A Division JP5269852B2 (ja) 2010-10-04 2010-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2005209983A JP2005209983A (ja) 2005-08-04
JP2005209983A5 JP2005209983A5 (enExample) 2006-07-13
JP4731816B2 true JP4731816B2 (ja) 2011-07-27

Family

ID=34792485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004016663A Expired - Lifetime JP4731816B2 (ja) 2004-01-26 2004-01-26 半導体装置

Country Status (6)

Country Link
US (1) US7122875B2 (enExample)
JP (1) JP4731816B2 (enExample)
KR (1) KR100639692B1 (enExample)
CN (1) CN100472803C (enExample)
DE (1) DE102004059620B4 (enExample)
TW (1) TWI253177B (enExample)

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US7679111B2 (en) * 2005-09-16 2010-03-16 International Rectifier Corporation Termination structure for a power semiconductor device
JP2007318062A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高耐圧半導体スイッチング素子
JP4935192B2 (ja) * 2006-05-31 2012-05-23 三菱電機株式会社 半導体装置
US8866191B2 (en) * 2007-02-22 2014-10-21 Forschungsverbund Berlin E.V. HEMT semiconductor component with field plates
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP5312889B2 (ja) * 2008-09-29 2013-10-09 ローム株式会社 半導体装置
JP5371358B2 (ja) * 2008-09-29 2013-12-18 ローム株式会社 半導体装置および半導体装置の製造方法
JP5487851B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置
CN101414637B (zh) * 2008-12-01 2010-08-25 西安电子科技大学 凹槽绝缘交叠栅异质结场效应晶体管
US8476732B2 (en) 2008-12-10 2013-07-02 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5391447B2 (ja) * 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
JP5376365B2 (ja) * 2009-04-16 2013-12-25 三菱電機株式会社 半導体装置
JP5460279B2 (ja) * 2009-12-11 2014-04-02 株式会社日立製作所 半導体装置およびその製造方法
JP5517688B2 (ja) * 2010-03-24 2014-06-11 三菱電機株式会社 半導体装置
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
WO2011152253A1 (ja) * 2010-06-04 2011-12-08 富士電機株式会社 半導体装置および駆動回路
JP5601072B2 (ja) * 2010-08-03 2014-10-08 サンケン電気株式会社 半導体装置
JP2012134198A (ja) * 2010-12-20 2012-07-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5703829B2 (ja) * 2011-02-24 2015-04-22 サンケン電気株式会社 半導体装置
JP5716591B2 (ja) * 2011-07-26 2015-05-13 三菱電機株式会社 半導体装置
JP5979836B2 (ja) 2011-09-09 2016-08-31 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US9093432B2 (en) 2011-09-23 2015-07-28 Sanken Electric Co., Ltd. Semiconductor device
DE112011105785B4 (de) * 2011-10-26 2015-05-13 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
EP2804214B1 (en) 2012-01-12 2021-02-24 Denso Corporation Semiconductor device comprising a termination structure
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) * 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US20130334648A1 (en) * 2012-06-15 2013-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for High Voltage Diodes
US10192981B2 (en) 2012-06-29 2019-01-29 Power Integrations, Inc. Switching device with charge distribution structure
US20140001479A1 (en) * 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
US9245879B2 (en) 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
US10224923B2 (en) * 2012-10-31 2019-03-05 Nxp Usa, Inc. Method and apparatus for driving a power transistor gate
JP6030923B2 (ja) * 2012-11-09 2016-11-24 シャープ株式会社 半導体装置、及びその製造方法
CN102945839B (zh) * 2012-12-06 2015-09-16 电子科技大学 一种部分场板屏蔽的高压互连结构
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6101183B2 (ja) * 2013-06-20 2017-03-22 株式会社東芝 半導体装置
JP6168961B2 (ja) * 2013-10-10 2017-07-26 三菱電機株式会社 半導体装置
CN103779407B (zh) * 2014-01-20 2016-05-18 西安电子科技大学 加源场板耗尽型AlGaN/GaN HEMT器件结构及其制作方法
CN103779408B (zh) * 2014-01-20 2016-08-17 西安电子科技大学 基于耗尽型槽栅AlGaN/GaN HEMT器件结构及其制作方法
JP2015177041A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
JP6210913B2 (ja) * 2014-03-20 2017-10-11 ルネサスエレクトロニクス株式会社 半導体装置
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
WO2016104264A1 (ja) * 2014-12-25 2016-06-30 富士電機株式会社 半導体装置
CN106653830B (zh) * 2015-10-28 2019-09-17 无锡华润上华科技有限公司 半导体器件耐压结构
JP6690336B2 (ja) * 2016-03-18 2020-04-28 富士電機株式会社 半導体装置
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
JP2018157008A (ja) * 2017-03-16 2018-10-04 サンケン電気株式会社 半導体装置
US10262938B2 (en) * 2017-08-31 2019-04-16 Vanguard International Semiconductor Corporation Semiconductor structure having conductive layer overlapping field oxide
CN107887432B (zh) * 2017-10-30 2020-02-14 济南大学 一种带有电荷可调型场板的横向绝缘栅双极型晶体管
CN107680997B (zh) * 2017-10-30 2020-04-14 济南大学 带有可调型场板的横向双扩散金属氧化物半导体场效应管
JP7160167B2 (ja) * 2018-12-28 2022-10-25 三菱電機株式会社 半導体装置
CN109713032B (zh) * 2018-12-28 2020-12-18 电子科技大学 一种抗辐射半导体器件终端结构
JP7459703B2 (ja) * 2020-07-15 2024-04-02 富士電機株式会社 半導体装置
JP7608226B2 (ja) * 2021-03-19 2025-01-06 株式会社東芝 半導体装置
CN113707717B (zh) * 2021-08-31 2023-09-15 电子科技大学 一种具有多浮空场板和集电极pmos结构的功率器件
CN114899225B (zh) * 2022-05-05 2025-08-22 南京大学 一种具有阶梯场板结构的增强型氮化镓高电子迁移率晶体管及其制作方法
CN114975608A (zh) * 2022-07-05 2022-08-30 苏州英嘉通半导体有限公司 具有阵列场板的hemt器件及其制备方法
CN115224113B (zh) * 2022-09-15 2023-01-20 北京芯可鉴科技有限公司 横向超结器件、横向绝缘栅双极晶体管及制造方法
CN118248739B (zh) * 2024-05-28 2024-10-18 北京智芯微电子科技有限公司 横向半导体器件及制造方法

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Also Published As

Publication number Publication date
CN100472803C (zh) 2009-03-25
DE102004059620A1 (de) 2005-08-18
DE102004059620B4 (de) 2011-07-28
TWI253177B (en) 2006-04-11
TW200525761A (en) 2005-08-01
KR100639692B1 (ko) 2006-10-31
KR20050077015A (ko) 2005-07-29
JP2005209983A (ja) 2005-08-04
US7122875B2 (en) 2006-10-17
US20050161761A1 (en) 2005-07-28
CN1649168A (zh) 2005-08-03

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