JP4617337B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
JP4617337B2
JP4617337B2 JP2007155323A JP2007155323A JP4617337B2 JP 4617337 B2 JP4617337 B2 JP 4617337B2 JP 2007155323 A JP2007155323 A JP 2007155323A JP 2007155323 A JP2007155323 A JP 2007155323A JP 4617337 B2 JP4617337 B2 JP 4617337B2
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Japan
Prior art keywords
group
developer
resin
negative
acid
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Active
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JP2007155323A
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English (en)
Japanese (ja)
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JP2008309879A (ja
JP2008309879A5 (enExample
Inventor
英明 椿
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Fujifilm Corp
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Fujifilm Corp
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Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007155323A priority Critical patent/JP4617337B2/ja
Priority to EP08010596.8A priority patent/EP2003504B1/en
Priority to TW097121697A priority patent/TWI343513B/zh
Priority to US12/137,371 priority patent/US8017298B2/en
Priority to TW099138811A priority patent/TWI438583B/zh
Priority to EP12197458.8A priority patent/EP2579098B1/en
Priority to KR1020080055449A priority patent/KR101028480B1/ko
Publication of JP2008309879A publication Critical patent/JP2008309879A/ja
Publication of JP2008309879A5 publication Critical patent/JP2008309879A5/ja
Priority to KR1020100112983A priority patent/KR101416132B1/ko
Priority to US12/959,147 priority patent/US8088557B2/en
Application granted granted Critical
Publication of JP4617337B2 publication Critical patent/JP4617337B2/ja
Priority to US13/306,174 priority patent/US8632942B2/en
Priority to US14/074,156 priority patent/US8852847B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007155323A 2007-06-12 2007-06-12 パターン形成方法 Active JP4617337B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007155323A JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法
TW097121697A TWI343513B (en) 2007-06-12 2008-06-11 Method of forming patterns
US12/137,371 US8017298B2 (en) 2007-06-12 2008-06-11 Method of forming patterns
TW099138811A TWI438583B (zh) 2007-06-12 2008-06-11 圖案形成方法
EP12197458.8A EP2579098B1 (en) 2007-06-12 2008-06-11 Method of forming patterns
EP08010596.8A EP2003504B1 (en) 2007-06-12 2008-06-11 Method of forming patterns
KR1020080055449A KR101028480B1 (ko) 2007-06-12 2008-06-12 패턴 형성 방법
KR1020100112983A KR101416132B1 (ko) 2007-06-12 2010-11-12 패턴 형성 방법
US12/959,147 US8088557B2 (en) 2007-06-12 2010-12-02 Method of forming patterns
US13/306,174 US8632942B2 (en) 2007-06-12 2011-11-29 Method of forming patterns
US14/074,156 US8852847B2 (en) 2007-06-12 2013-11-07 Method of forming patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007155323A JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010197911A Division JP5050087B2 (ja) 2010-09-03 2010-09-03 パターン形成方法
JP2010197910A Division JP5050086B2 (ja) 2010-09-03 2010-09-03 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2008309879A JP2008309879A (ja) 2008-12-25
JP2008309879A5 JP2008309879A5 (enExample) 2010-08-05
JP4617337B2 true JP4617337B2 (ja) 2011-01-26

Family

ID=39745037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007155323A Active JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Country Status (5)

Country Link
US (2) US8017298B2 (enExample)
EP (2) EP2579098B1 (enExample)
JP (1) JP4617337B2 (enExample)
KR (2) KR101028480B1 (enExample)
TW (2) TWI438583B (enExample)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
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JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
EP2138898B1 (en) * 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
KR20130114280A (ko) 2007-06-12 2013-10-16 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US7851140B2 (en) * 2007-06-12 2010-12-14 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
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US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP5639755B2 (ja) * 2008-11-27 2014-12-10 富士フイルム株式会社 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液
JP2010191416A (ja) * 2009-01-23 2010-09-02 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物
JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
EP2280308A1 (en) * 2009-06-08 2011-02-02 Rohm and Haas Electronic Materials, L.L.C. Processes for photolithography
KR20110016418A (ko) * 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
US8303832B2 (en) * 2009-08-17 2012-11-06 Palo Alto Research Center Incorporated Solid inks for masks for printed circuit boards and other electronic devices
JP5520590B2 (ja) * 2009-10-06 2014-06-11 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
TWI522745B (zh) * 2010-01-08 2016-02-21 富士軟片股份有限公司 圖案形成方法、感光化射線性或感放射線性樹脂組成物及光阻膜
JP5593075B2 (ja) * 2010-01-13 2014-09-17 富士フイルム株式会社 パターン形成方法、パターン、化学増幅型レジスト組成物及びレジスト膜
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JP2011154214A (ja) * 2010-01-27 2011-08-11 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP5750272B2 (ja) * 2010-02-18 2015-07-15 東京応化工業株式会社 レジストパターン形成方法
JP5775701B2 (ja) * 2010-02-26 2015-09-09 富士フイルム株式会社 パターン形成方法及びレジスト組成物
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JP5624906B2 (ja) * 2010-03-23 2014-11-12 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
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JP5740184B2 (ja) * 2010-03-25 2015-06-24 富士フイルム株式会社 パターン形成方法及びレジスト組成物
JP5639780B2 (ja) * 2010-03-26 2014-12-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5675144B2 (ja) * 2010-03-30 2015-02-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5656437B2 (ja) * 2010-03-31 2015-01-21 富士フイルム株式会社 パターン形成方法及びレジスト組成物
JP5618625B2 (ja) * 2010-05-25 2014-11-05 富士フイルム株式会社 パターン形成方法及び感活性光線性又は感放射線性樹脂組成物
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JP5557621B2 (ja) * 2010-06-29 2014-07-23 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
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JP5062352B2 (ja) * 2010-09-09 2012-10-31 Ｊｓｒ株式会社 レジストパターン形成方法
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US8017298B2 (en) 2011-09-13
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JP2008309879A (ja) 2008-12-25
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US20110076625A1 (en) 2011-03-31
EP2003504A2 (en) 2008-12-17
US20080318171A1 (en) 2008-12-25
TW201120585A (en) 2011-06-16
US8088557B2 (en) 2012-01-03
KR20080109670A (ko) 2008-12-17
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