JP4606869B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4606869B2
JP4606869B2 JP2004374314A JP2004374314A JP4606869B2 JP 4606869 B2 JP4606869 B2 JP 4606869B2 JP 2004374314 A JP2004374314 A JP 2004374314A JP 2004374314 A JP2004374314 A JP 2004374314A JP 4606869 B2 JP4606869 B2 JP 4606869B2
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JP
Japan
Prior art keywords
bit line
semiconductor device
potential
sense amplifier
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004374314A
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English (en)
Japanese (ja)
Other versions
JP2006179158A (ja
JP2006179158A5 (enExample
Inventor
理一郎 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004374314A priority Critical patent/JP4606869B2/ja
Priority to US11/313,833 priority patent/US7239562B2/en
Publication of JP2006179158A publication Critical patent/JP2006179158A/ja
Priority to US11/797,843 priority patent/US7336544B2/en
Publication of JP2006179158A5 publication Critical patent/JP2006179158A5/ja
Application granted granted Critical
Publication of JP4606869B2 publication Critical patent/JP4606869B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2004374314A 2004-12-24 2004-12-24 半導体装置 Expired - Fee Related JP4606869B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004374314A JP4606869B2 (ja) 2004-12-24 2004-12-24 半導体装置
US11/313,833 US7239562B2 (en) 2004-12-24 2005-12-22 Semiconductor device
US11/797,843 US7336544B2 (en) 2004-12-24 2007-05-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004374314A JP4606869B2 (ja) 2004-12-24 2004-12-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2006179158A JP2006179158A (ja) 2006-07-06
JP2006179158A5 JP2006179158A5 (enExample) 2007-07-19
JP4606869B2 true JP4606869B2 (ja) 2011-01-05

Family

ID=36683702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004374314A Expired - Fee Related JP4606869B2 (ja) 2004-12-24 2004-12-24 半導体装置

Country Status (2)

Country Link
US (2) US7239562B2 (enExample)
JP (1) JP4606869B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4210942B2 (ja) * 2005-02-23 2009-01-21 株式会社デンソー 車両用衝突物体判別装置
US7391639B2 (en) * 2006-02-14 2008-06-24 Infineon Technologies Ag Memory device and method for reading data
US7436708B2 (en) * 2006-03-01 2008-10-14 Micron Technology, Inc. NAND memory device column charging
JP4195715B2 (ja) 2006-07-31 2008-12-10 シャープ株式会社 半導体記憶装置
US7885102B2 (en) 2006-09-15 2011-02-08 Renesas Electronics Corporation Semiconductor device
US20080101110A1 (en) * 2006-10-25 2008-05-01 Thomas Happ Combined read/write circuit for memory
JP4524684B2 (ja) * 2006-11-21 2010-08-18 エルピーダメモリ株式会社 メモリ読み出し回路及び方式
JP5396011B2 (ja) * 2007-06-19 2014-01-22 ピーエスフォー ルクスコ エスエイアールエル 相変化メモリ装置
JP5159224B2 (ja) 2007-09-21 2013-03-06 株式会社東芝 抵抗変化メモリ装置
US7535783B2 (en) * 2007-10-01 2009-05-19 International Business Machines Corporation Apparatus and method for implementing precise sensing of PCRAM devices
JP2009117003A (ja) * 2007-11-09 2009-05-28 Toshiba Corp 不揮発性メモリ装置のデータ読み出し方法
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
KR20100013645A (ko) 2008-07-31 2010-02-10 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 쓰기 방법
JP2010044827A (ja) 2008-08-13 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置
JP5178448B2 (ja) * 2008-10-17 2013-04-10 株式会社東芝 不揮発性半導体記憶装置
KR101001144B1 (ko) * 2009-05-12 2010-12-17 주식회사 하이닉스반도체 상변환 메모리 장치
US8050109B2 (en) * 2009-08-10 2011-11-01 Sandisk 3D Llc Semiconductor memory with improved memory block switching
JP5603480B2 (ja) * 2010-04-13 2014-10-08 コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッド 二重書込みドライバを有する相変化メモリ
CN102859602A (zh) * 2010-04-13 2013-01-02 莫塞德技术公司 具有双写入驱动器的相变存储器
KR20110118874A (ko) * 2010-04-26 2011-11-02 삼성전자주식회사 반도체 장치, 이를 포함하는 반도체 시스템, 및 상기 반도체 장치의 동작 방법
JP2011258288A (ja) * 2010-06-10 2011-12-22 Toshiba Corp 半導体記憶装置
KR101278103B1 (ko) 2011-09-26 2013-06-24 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8582380B2 (en) * 2011-12-21 2013-11-12 Micron Technology, Inc. Systems, circuits, and methods for charge sharing
US20140140124A1 (en) * 2012-11-21 2014-05-22 Dong-seok Kang Resistive memory device having selective sensing operation and access control method thereof
JP5450846B2 (ja) * 2013-01-16 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
US9001559B2 (en) 2013-03-22 2015-04-07 Masahiro Takahashi Resistance change memory
US9165647B1 (en) * 2014-06-04 2015-10-20 Intel Corporation Multistage memory cell read
TWI618074B (zh) * 2017-03-06 2018-03-11 力旺電子股份有限公司 一次編程非揮發性記憶體及其讀取感測方法
KR102671481B1 (ko) 2019-07-19 2024-06-03 삼성전자주식회사 메모리 셀의 멀티-턴 온을 방지하기 위한 메모리 장치 및 그것의 동작 방법
CN115004300B (zh) * 2021-08-19 2025-05-16 长江先进存储产业创新中心有限责任公司 存储器装置及其控制方法
KR102636041B1 (ko) 2021-10-20 2024-02-14 에스케이키파운드리 주식회사 메모리 셀 독출 회로
CN119495340A (zh) * 2024-10-22 2025-02-21 新存科技(武汉)有限责任公司 相变存储器及操作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299448B (enExample) * 1995-07-20 1997-03-01 Matsushita Electric Industrial Co Ltd
JP3592887B2 (ja) * 1997-04-30 2004-11-24 株式会社東芝 不揮発性半導体記憶装置
JP3633354B2 (ja) * 1999-03-29 2005-03-30 株式会社日立製作所 半導体装置
JP2001067884A (ja) * 1999-08-31 2001-03-16 Hitachi Ltd 不揮発性半導体記憶装置
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
JP4731041B2 (ja) * 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US7116593B2 (en) * 2002-02-01 2006-10-03 Hitachi, Ltd. Storage device
JP4392680B2 (ja) * 2002-09-05 2010-01-06 エルピーダメモリ株式会社 半導体記憶装置
DE60323202D1 (de) * 2003-02-21 2008-10-09 St Microelectronics Srl Phasenwechselspeicheranordnung
JP4381278B2 (ja) * 2004-10-14 2009-12-09 株式会社東芝 不揮発性半導体記憶装置の制御方法

Also Published As

Publication number Publication date
US7336544B2 (en) 2008-02-26
JP2006179158A (ja) 2006-07-06
US7239562B2 (en) 2007-07-03
US20070211544A1 (en) 2007-09-13
US20060158922A1 (en) 2006-07-20

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