JP4563465B2 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
- Publication number
- JP4563465B2 JP4563465B2 JP2008083132A JP2008083132A JP4563465B2 JP 4563465 B2 JP4563465 B2 JP 4563465B2 JP 2008083132 A JP2008083132 A JP 2008083132A JP 2008083132 A JP2008083132 A JP 2008083132A JP 4563465 B2 JP4563465 B2 JP 4563465B2
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- JP
- Japan
- Prior art keywords
- block
- data
- address
- area
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/16—Protection against loss of memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Memory System (AREA)
- Read Only Memory (AREA)
Description
Claims (1)
- コントローラと不揮発性メモリとを有し、
前記不揮発性メモリは複数のブロックを有し、夫々のブロックは外部に接続されるホストから供給されるデータを格納する領域と当該データに関する管理情報を格納する領域とを有し、
前記管理情報は、当該管理情報を有するブロックの有効性を示す情報と、当該ブロックに格納されるデータのエラー検出・訂正情報と、当該ブロックの劣化の程度を示す情報と、当該管理情報のエラー検出・訂正情報とを有し、
前記コントローラは、前記当該ブロックの有効性を示す情報に応じて当該ブロックに格納されているデータへのアクセス可否を判断し、当該ブロックに格納されているデータのエラーの有無を前記データのエラー検出・訂正情報を用いて判別し、前記データのエラーを検出した場合は前記当該ブロックの有効性を示す情報を更新し、前記当該ブロックの劣化の程度を示す情報に応じて当該ブロックを継続して使用するか別のブロックに代替するかを判別し、前記管理情報のエラー検出・訂正情報に応じて当該ブロックに格納されている管理情報のエラーの有無を判別することを特徴とする不揮発性半導体記憶装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083132A JP4563465B2 (ja) | 1996-02-29 | 2008-03-27 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4245196 | 1996-02-29 | ||
JP2008083132A JP4563465B2 (ja) | 1996-02-29 | 2008-03-27 | 不揮発性半導体記憶装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007196960A Division JP4171518B2 (ja) | 1996-02-29 | 2007-07-30 | 不揮発性半導体記憶装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010130804A Division JP5095777B2 (ja) | 1996-02-29 | 2010-06-08 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008204475A JP2008204475A (ja) | 2008-09-04 |
JP4563465B2 true JP4563465B2 (ja) | 2010-10-13 |
Family
ID=12636443
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53077897A Expired - Fee Related JP3614173B2 (ja) | 1996-02-29 | 1996-11-29 | 部分不良メモリを搭載した半導体記憶装置 |
JP2008083132A Expired - Fee Related JP4563465B2 (ja) | 1996-02-29 | 2008-03-27 | 不揮発性半導体記憶装置 |
JP2010130804A Expired - Lifetime JP5095777B2 (ja) | 1996-02-29 | 2010-06-08 | 不揮発性半導体記憶装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53077897A Expired - Fee Related JP3614173B2 (ja) | 1996-02-29 | 1996-11-29 | 部分不良メモリを搭載した半導体記憶装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010130804A Expired - Lifetime JP5095777B2 (ja) | 1996-02-29 | 2010-06-08 | 不揮発性半導体記憶装置 |
Country Status (5)
Country | Link |
---|---|
US (11) | US6031758A (ja) |
JP (3) | JP3614173B2 (ja) |
KR (1) | KR100308173B1 (ja) |
AU (1) | AU3832297A (ja) |
WO (1) | WO1997032253A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE45857E1 (en) | 1995-07-14 | 2016-01-19 | Solid State Storage Solutions, Inc | External storage device and memory access control method thereof |
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KR19990087236A (ko) | 1999-12-15 |
US20020097604A1 (en) | 2002-07-25 |
US20010036114A1 (en) | 2001-11-01 |
JP5095777B2 (ja) | 2012-12-12 |
US20040022249A1 (en) | 2004-02-05 |
US20120213002A1 (en) | 2012-08-23 |
US20140185380A1 (en) | 2014-07-03 |
US20080055986A1 (en) | 2008-03-06 |
US8503235B2 (en) | 2013-08-06 |
US6236601B1 (en) | 2001-05-22 |
KR100308173B1 (ko) | 2001-11-02 |
US6388920B2 (en) | 2002-05-14 |
US9007830B2 (en) | 2015-04-14 |
US20010015908A1 (en) | 2001-08-23 |
JP2010192002A (ja) | 2010-09-02 |
JP2008204475A (ja) | 2008-09-04 |
US6031758A (en) | 2000-02-29 |
WO1997032253A1 (en) | 1997-09-04 |
US8064257B2 (en) | 2011-11-22 |
US20100177579A1 (en) | 2010-07-15 |
US6728138B2 (en) | 2004-04-27 |
AU3832297A (en) | 1997-09-16 |
US20030128585A1 (en) | 2003-07-10 |
US6317371B2 (en) | 2001-11-13 |
JP3614173B2 (ja) | 2005-01-26 |
US7616485B2 (en) | 2009-11-10 |
US6542405B2 (en) | 2003-04-01 |
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