CN101458963B - E2prom脱机复制方法 - Google Patents
E2prom脱机复制方法 Download PDFInfo
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- CN101458963B CN101458963B CN2007101722414A CN200710172241A CN101458963B CN 101458963 B CN101458963 B CN 101458963B CN 2007101722414 A CN2007101722414 A CN 2007101722414A CN 200710172241 A CN200710172241 A CN 200710172241A CN 101458963 B CN101458963 B CN 101458963B
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CN2007101722414A CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
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CN2007101722414A CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
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CN101458963A CN101458963A (zh) | 2009-06-17 |
CN101458963B true CN101458963B (zh) | 2011-03-30 |
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CN2007101722414A Active CN101458963B (zh) | 2007-12-13 | 2007-12-13 | E2prom脱机复制方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6031758A (en) * | 1996-02-29 | 2000-02-29 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
US6128694A (en) * | 1998-03-10 | 2000-10-03 | Dell Usa, L.P. | Method of correcting identification data stored in an EEPROM |
CN2501159Y (zh) * | 2001-07-16 | 2002-07-17 | 青岛海信电器股份有限公司 | 串行电可擦可编程只读存储器的复制器 |
CN1624665A (zh) * | 2003-12-02 | 2005-06-08 | 深圳创维-Rgb电子有限公司 | 一种烧写e2prom的方法和装置 |
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- 2007-12-13 CN CN2007101722414A patent/CN101458963B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6031758A (en) * | 1996-02-29 | 2000-02-29 | Hitachi, Ltd. | Semiconductor memory device having faulty cells |
US6128694A (en) * | 1998-03-10 | 2000-10-03 | Dell Usa, L.P. | Method of correcting identification data stored in an EEPROM |
CN2501159Y (zh) * | 2001-07-16 | 2002-07-17 | 青岛海信电器股份有限公司 | 串行电可擦可编程只读存储器的复制器 |
CN1624665A (zh) * | 2003-12-02 | 2005-06-08 | 深圳创维-Rgb电子有限公司 | 一种烧写e2prom的方法和装置 |
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CN101458963A (zh) | 2009-06-17 |
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Effective date of registration: 20130608 Address after: 201203 Building 1, building 200, Zhang Heng Road, Zhangjiang hi tech park, Shanghai, Pudong New Area, 2 Patentee after: INESA Electron Co., Ltd. Address before: 201206 Shanghai city Pudong New Area Jinsui Road No. 1398 Patentee before: Shanghai Matsushita Plasma Display Co., Ltd. |