JP4562429B2 - 半導体デバイス中でのシリサイドフィルムの形成方法 - Google Patents
半導体デバイス中でのシリサイドフィルムの形成方法 Download PDFInfo
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- JP4562429B2 JP4562429B2 JP2004175689A JP2004175689A JP4562429B2 JP 4562429 B2 JP4562429 B2 JP 4562429B2 JP 2004175689 A JP2004175689 A JP 2004175689A JP 2004175689 A JP2004175689 A JP 2004175689A JP 4562429 B2 JP4562429 B2 JP 4562429B2
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- 238000000034 method Methods 0.000 title claims description 62
- 229910021332 silicide Inorganic materials 0.000 title claims description 27
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 238000000137 annealing Methods 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000004151 rapid thermal annealing Methods 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 63
- 229910005883 NiSi Inorganic materials 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 42
- 238000006243 chemical reaction Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 101000857634 Homo sapiens Receptor-transporting protein 1 Proteins 0.000 description 1
- 101000635752 Homo sapiens Receptor-transporting protein 2 Proteins 0.000 description 1
- 102100025426 Receptor-transporting protein 1 Human genes 0.000 description 1
- 102100030850 Receptor-transporting protein 2 Human genes 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (15)
- 平坦な表面を有する基板上で金属とシリコンの自己整列型のシリサイド化を行う方法であって、
前記金属もしくは前記シリコンのうちの一方からなるブランケット層を提供するステップと、
前記ブランケット層に接触している、前記金属もしくは前記シリコンのうちの他方のパターン化構造を提供するステップと、
前記基板を、一様に加熱され且つ平坦な加熱される物体に平行に且つ対向させて配置し、前記加熱される物体を前記平坦な基板表面の全体上に拡張させることにより、前記ブランケット層及び前記パターン化構造を急速熱アニーリングして金属シリサイドパターンを形成する急速熱アニーリングステップと、
前記金属シリサイドパターンを覆う各領域の前記ブランケット層がすべて消耗される前に、前記急速熱アニーリングを中断するステップと
を含む方法。 - 前記中断するステップが、急速熱アニーリング後の前記基板の強制冷却ステップを含む請求項1に記載の方法。
- 前記強制冷却ステップが、冷却用物体と前記基板の平坦な表面の2mm以内で伝導により熱を交換するステップを含み、
前記冷却用物体が、前記基板の熱質量の少なくとも5倍の熱質量を有する請求項2に記載の方法。 - 前記強制冷却ステップが、前記基板を急速熱アニーリングステーションから冷却ステーションへ移送するステップを含む請求項3に記載の方法。
- 前記急速熱アニーリングするステップが、前記基板の表面の2mm以内に位置する前記加熱される物体と伝導により熱を交換するステップを含み、
前記加熱される物体が、前記基板の熱質量の少なくとも5倍の熱質量を有する請求項1に記載の方法。 - 前記急速熱アニーリングするステップが、前記基板と前記加熱される物体との間にガスクッションを保持するステップを含む請求項5に記載の方法。
- 前記急速熱アニーリングするステップが、前記基板と、前記加熱される物体の反対側の前記基板表面上の第2の物体との間に第2のガスクッションを保持するステップを含む請求項6に記載の方法。
- 前記金属シリサイドのパターンの直接上にある領域の前記ブランケット層がすべて消費される前に、強制冷却によって前記急速熱アニーリングするステップを中断するステップをさらに含む請求項7に記載の方法。
- 前記強制冷却が、前記基板の平坦な表面の2mm以内に位置する冷却用物体と、伝導によって熱を交換するステップを含み、
前記冷却用物体が、前記基板の熱質量の少なくとも5倍の熱質量を有する請求項8に記載の方法。 - 前記冷却用物体が、第2の物体を含み、
前記強制冷却するステップが、前記基板を、加熱される物体の温度から遠ざけ、前記冷却用物体の温度に近づけるように、前記基板のいずれかの側のガスフローを切り換えるステップを含む請求項9に記載の方法。 - 前記ガスフローを切り換えるステップが、前記冷却用物体と前記基板との間には熱伝導性がより高いガスを、前記加熱される物体と前記基板との間には熱伝導性がより低いガスを流すステップを含む請求項10に記載の方法。
- 前記強制冷却するステップが、前記加熱される物体を保持するアニールステーションから、前記冷却用物体を保持する冷却ステーションへ前記基板を移送するステップを含む請求項9に記載の方法。
- 前記パターン化構造が、絶縁領域相互の間に露出したシリコン領域を含み、
前記ブランケット層が、前記シリコン領域及び前記絶縁領域の上に重なる金属層を含む請求項1に記載の方法。 - 前記シリコン領域が、半導体基板およびポリシリコンゲート構造のトランジスタ活性区域を含む請求項13に記載の方法。
- 前記シリコン領域が、さらにトランジスタゲートスペーサを含む請求項14に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US47832403P | 2003-06-12 | 2003-06-12 |
Publications (2)
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JP2005039225A JP2005039225A (ja) | 2005-02-10 |
JP4562429B2 true JP4562429B2 (ja) | 2010-10-13 |
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JP2004175689A Expired - Lifetime JP4562429B2 (ja) | 2003-06-12 | 2004-06-14 | 半導体デバイス中でのシリサイドフィルムの形成方法 |
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US (2) | US7153772B2 (ja) |
JP (1) | JP4562429B2 (ja) |
KR (1) | KR100886260B1 (ja) |
Families Citing this family (21)
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US7153772B2 (en) * | 2003-06-12 | 2006-12-26 | Asm International N.V. | Methods of forming silicide films in semiconductor devices |
JP4440080B2 (ja) * | 2004-11-12 | 2010-03-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
KR100576826B1 (ko) * | 2004-12-15 | 2006-05-10 | 삼성전자주식회사 | 니켈 샐리사이드 공정 및 이를 사용한 반도체 소자의제조방법 |
JP2006324628A (ja) * | 2005-05-16 | 2006-11-30 | Interuniv Micro Electronica Centrum Vzw | 完全ケイ化ゲート形成方法及び当該方法によって得られたデバイス |
JP2007173743A (ja) * | 2005-12-26 | 2007-07-05 | Toshiba Corp | 半導体装置の製造方法 |
US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
US8367548B2 (en) * | 2007-03-16 | 2013-02-05 | Asm America, Inc. | Stable silicide films and methods for making the same |
US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
JP5075793B2 (ja) * | 2008-11-06 | 2012-11-21 | 東京エレクトロン株式会社 | 可動ガス導入構造物及び基板処理装置 |
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US9379011B2 (en) * | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
KR101070869B1 (ko) * | 2009-04-21 | 2011-10-06 | 전북대학교산학협력단 | 쇼트키 장벽 트랜지스터 소자의 제조방법 |
US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
US10373850B2 (en) * | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
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KR20040107434A (ko) | 2004-12-20 |
US7691750B2 (en) | 2010-04-06 |
US7153772B2 (en) | 2006-12-26 |
US20050017310A1 (en) | 2005-01-27 |
JP2005039225A (ja) | 2005-02-10 |
KR100886260B1 (ko) | 2009-02-27 |
US20070059932A1 (en) | 2007-03-15 |
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