JP4439409B2 - レジスト組成物及びそれを用いたパターン形成方法 - Google Patents

レジスト組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
JP4439409B2
JP4439409B2 JP2005026780A JP2005026780A JP4439409B2 JP 4439409 B2 JP4439409 B2 JP 4439409B2 JP 2005026780 A JP2005026780 A JP 2005026780A JP 2005026780 A JP2005026780 A JP 2005026780A JP 4439409 B2 JP4439409 B2 JP 4439409B2
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JP
Japan
Prior art keywords
group
acid
substituted
carbon atoms
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005026780A
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English (en)
Japanese (ja)
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JP2006215202A (ja
JP2006215202A5 (enExample
Inventor
一良 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2005026780A priority Critical patent/JP4439409B2/ja
Priority to US11/336,912 priority patent/US20060172226A1/en
Priority to EP06001970A priority patent/EP1693704A3/en
Publication of JP2006215202A publication Critical patent/JP2006215202A/ja
Publication of JP2006215202A5 publication Critical patent/JP2006215202A5/ja
Application granted granted Critical
Publication of JP4439409B2 publication Critical patent/JP4439409B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005026780A 2005-02-02 2005-02-02 レジスト組成物及びそれを用いたパターン形成方法 Expired - Fee Related JP4439409B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005026780A JP4439409B2 (ja) 2005-02-02 2005-02-02 レジスト組成物及びそれを用いたパターン形成方法
US11/336,912 US20060172226A1 (en) 2005-02-02 2006-01-23 Resist composition and pattern forming method using the same
EP06001970A EP1693704A3 (en) 2005-02-02 2006-01-31 Resist composition and pattern forming method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026780A JP4439409B2 (ja) 2005-02-02 2005-02-02 レジスト組成物及びそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2006215202A JP2006215202A (ja) 2006-08-17
JP2006215202A5 JP2006215202A5 (enExample) 2008-10-02
JP4439409B2 true JP4439409B2 (ja) 2010-03-24

Family

ID=36636967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005026780A Expired - Fee Related JP4439409B2 (ja) 2005-02-02 2005-02-02 レジスト組成物及びそれを用いたパターン形成方法

Country Status (3)

Country Link
US (1) US20060172226A1 (enExample)
EP (1) EP1693704A3 (enExample)
JP (1) JP4439409B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009047105A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
JP5611652B2 (ja) * 2010-05-06 2014-10-22 信越化学工業株式会社 ネガ型レジスト材料、パターン形成方法及びフォトマスクブランク
KR101830595B1 (ko) * 2010-11-09 2018-02-21 스미또모 가가꾸 가부시키가이샤 수지 및 포토레지스트 조성물
JP2012252077A (ja) * 2011-06-01 2012-12-20 Tokyo Ohka Kogyo Co Ltd レジスト組成物及びレジストパターン形成方法、並びに、高分子化合物及びその製造方法

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2833827A (en) 1955-01-17 1958-05-06 Bayer Ag Tri (3, 5-di lower alkyl-4-hydroxy phenyl)-sulfonium chlorides and method of preparing same
US3902114A (en) 1967-10-20 1975-08-26 Gunther Alich Method of and apparatus for measuring the distance between cooperating rollers of a rolling mill
US3987037A (en) 1971-09-03 1976-10-19 Minnesota Mining And Manufacturing Company Chromophore-substituted vinyl-halomethyl-s-triazines
DE2150691C2 (de) 1971-10-12 1982-09-09 Basf Ag, 6700 Ludwigshafen Lichtempfindliches Gemisch und Verwendung eines lichtempfindlichen Gemisches zur Herstellung einer Flachdruckplatte
US3905815A (en) 1971-12-17 1975-09-16 Minnesota Mining & Mfg Photopolymerizable sheet material with diazo resin layer
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
DE2242106A1 (de) 1972-08-26 1974-03-21 Agfa Gevaert Ag Lichtempfindliches photographisches material
USRE27992E (en) 1973-01-31 1974-04-30 Fig.io
GB1512981A (en) 1974-05-02 1978-06-01 Gen Electric Curable epoxide compositions
US4069056A (en) 1974-05-02 1978-01-17 General Electric Company Photopolymerizable composition containing group Va aromatic onium salts
DE2718130C2 (de) 1977-04-23 1979-05-17 Du Pont De Nemours (Deutschland) Gmbh, 4000 Duesseldorf lichtempfindliches Aufzeichnungsmaterial
US4173476A (en) 1978-02-08 1979-11-06 Minnesota Mining And Manufacturing Company Complex salt photoinitiator
US4181531A (en) 1978-04-07 1980-01-01 E. I. Du Pont De Nemours And Company Positive non-silver systems containing nitrofuryldihydropyridine
JPS6053300B2 (ja) 1978-08-29 1985-11-25 富士写真フイルム株式会社 感光性樹脂組成物
DE2922746A1 (de) 1979-06-05 1980-12-11 Basf Ag Positiv arbeitendes schichtuebertragungsmaterial
DE3166592D1 (en) 1980-07-14 1984-11-15 Akzo Nv Thermosetting coating composition containing a blocked acid catalyst
US4478967A (en) 1980-08-11 1984-10-23 Minnesota Mining And Manufacturing Company Photolabile blocked surfactants and compositions containing the same
US4371605A (en) 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
US4431774A (en) 1981-09-14 1984-02-14 Ciba-Geigy Corporation Process for the curing of stoving lacquers
US4510290A (en) 1982-01-11 1985-04-09 Ciba Geigy Corporation Acid-curable composition containing a masked curing catalyst, and a process for the curing thereof
DE3364186D1 (en) 1982-08-09 1986-07-24 Akzo Nv Thermosetting coating composition containing a blocked acid as catalyst
US4518676A (en) 1982-09-18 1985-05-21 Ciba Geigy Corporation Photopolymerizable compositions containing diaryliodosyl salts
US5073476A (en) 1983-05-18 1991-12-17 Ciba-Geigy Corporation Curable composition and the use thereof
US4554238A (en) 1984-03-20 1985-11-19 Minnesota Mining And Manufacturing Company Spectrally-sensitized imaging system
JPS60198538A (ja) 1984-03-22 1985-10-08 Toshiba Corp ポジ型レジスト材料
JPS60218309A (ja) 1984-04-16 1985-11-01 Nippon Oil & Fats Co Ltd パ−ル状ヘア−リンス
JPS60239736A (ja) 1984-05-14 1985-11-28 Fuji Photo Film Co Ltd 感光性組成物
JP2525568B2 (ja) 1985-01-18 1996-08-21 富士写真フイルム株式会社 光可溶化組成物
JPS61169837A (ja) 1985-01-22 1986-07-31 Fuji Photo Film Co Ltd 光可溶化組成物
JPS61169835A (ja) 1985-01-22 1986-07-31 Fuji Photo Film Co Ltd 光可溶化組成物
JPS61226745A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS61226746A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS62153853A (ja) 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
EP0199672B1 (de) 1985-04-12 1988-06-01 Ciba-Geigy Ag Oximsulfonate mit reaktiven Gruppen
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPH0616174B2 (ja) 1985-08-12 1994-03-02 三菱化成株式会社 ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物
JPH0766185B2 (ja) 1985-09-09 1995-07-19 富士写真フイルム株式会社 感光性組成物
JPS6269263A (ja) 1985-09-24 1987-03-30 Toshiba Corp 感光性組成物
JPH083630B2 (ja) 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
DE3604580A1 (de) 1986-02-14 1987-08-20 Basf Ag Haertbare mischungen, enthaltend n-sulfonylaminosulfoniumsalze als kationisch wirksame katalysatoren
DE3604581A1 (de) 1986-02-14 1987-08-20 Basf Ag 4-acylbenzylsulfoniumsalze, ihre herstellung sowie sie enthaltende photohaertbare gemische und aufzeichnungsmaterialien
JPS62212401A (ja) 1986-03-14 1987-09-18 Fuji Photo Film Co Ltd 光重合性組成物
JPS6326653A (ja) 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
JPS6334540A (ja) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPS6370243A (ja) 1986-09-11 1988-03-30 Fuji Photo Film Co Ltd 感光性組成物
JPH0769611B2 (ja) 1986-12-01 1995-07-31 東京応化工業株式会社 感光性樹脂用下地材料
JPS63146029A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63146038A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
DE3642855C1 (de) 1986-12-16 1988-06-23 Du Pont Deutschland Lichtempfindliches Gemisch
GB8630129D0 (en) 1986-12-17 1987-01-28 Ciba Geigy Ag Formation of image
US4760013A (en) 1987-02-17 1988-07-26 International Business Machines Corporation Sulfonium salt photoinitiators
JPH0682188B2 (ja) 1987-03-19 1994-10-19 ザイトロニクス，インコーポレイテツド 紫外線被曝を可視化したフィルム及び紫外線被曝量測定部材
JPH0743536B2 (ja) 1987-05-29 1995-05-15 富士写真フイルム株式会社 感光性組成物
DE3721740A1 (de) 1987-07-01 1989-01-12 Basf Ag Sulfoniumsalze mit saeurelabilen gruppierungen
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
US4846009A (en) 1987-10-21 1989-07-11 Caterpillar Inc. Countershaft transmission
US4933377A (en) 1988-02-29 1990-06-12 Saeva Franklin D Novel sulfonium salts and the use thereof as photoinitiators
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
CA2002873A1 (en) 1988-11-21 1990-05-21 Franklin Donald Saeva Onium salts and the use thereof as photoinitiators
JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
JPH02161445A (ja) 1988-12-15 1990-06-21 Fujitsu Ltd 可視レーザ記録用感光材料
DE69027799T2 (de) 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
JP2661671B2 (ja) 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
DE3914407A1 (de) 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JPH02296514A (ja) 1989-05-12 1990-12-07 Matsushita Electric Ind Co Ltd 車両用サスペンション制御装置
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
IT1233538B (it) 1989-07-25 1992-04-03 Dolomite Spa Scarpone da sci a calzata posteriore
GB8923480D0 (en) 1989-10-18 1989-12-06 Moore John A Improvements relating to hanger support elements
JP2845995B2 (ja) 1989-10-27 1999-01-13 株式会社日立製作所 領域抽出手法
JP2717602B2 (ja) 1990-01-16 1998-02-18 富士写真フイルム株式会社 感光性組成物
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
JPH03223860A (ja) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd 新規レジスト材料
DE4006190A1 (de) 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5576143A (en) 1991-12-03 1996-11-19 Fuji Photo Film Co., Ltd. Light-sensitive composition
JP2753921B2 (ja) 1992-06-04 1998-05-20 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5294680A (en) 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
JP2944327B2 (ja) 1992-09-14 1999-09-06 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JP3082473B2 (ja) 1992-10-05 2000-08-28 ジェイエスアール株式会社 反射防止膜およびレジストパターンの形成方法
JPH06199770A (ja) 1992-12-28 1994-07-19 Japan Synthetic Rubber Co Ltd 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物
FR2703553B1 (fr) 1993-04-02 1995-05-12 Gec Alsthom Transport Sa Procédé de contrôle actif du bruit produit par un appareil et dispositif de mise en Óoeuvre du procédé.
DE69407879T2 (de) 1993-06-30 1998-04-30 Fuji Photo Film Co Ltd Phenolverbindungen, die Methoxymethylgruppen oder Hydroxymethylgruppen enthalten
JP3112229B2 (ja) 1993-06-30 2000-11-27 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3130188B2 (ja) 1993-08-31 2001-01-31 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JP3224115B2 (ja) 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5824451A (en) 1994-07-04 1998-10-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2953562B2 (ja) 1994-07-18 1999-09-27 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いた多層レジスト材料
JPH0862834A (ja) 1994-08-22 1996-03-08 Mitsubishi Chem Corp フォトレジスト組成物
JPH08179509A (ja) 1994-10-28 1996-07-12 Mitsubishi Chem Corp 反射防止組成物及びレジストパターン形成方法
JP3433564B2 (ja) 1995-04-12 2003-08-04 信越化学工業株式会社 高分子化合物及び化学増幅型ポジ型レジスト組成物
JPH095988A (ja) 1995-06-21 1997-01-10 Mitsubishi Chem Corp 感放射線性塗布組成物
JP3562599B2 (ja) 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
JP4007569B2 (ja) * 1999-09-06 2007-11-14 富士フイルム株式会社 ポジ型電子線又はｘ線レジスト組成物
JP2002090991A (ja) 2000-09-13 2002-03-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2002277862A (ja) 2001-03-21 2002-09-25 Nippon Hoso Kyokai <Nhk> 液晶光変調器及びそれを用いた表示装置
ATE438638T1 (de) * 2001-07-19 2009-08-15 Lamberti Spa Sulfoniumsalze als photoinitiatoren für strahlungshärtbare systeme
JP4083035B2 (ja) * 2002-02-13 2008-04-30 富士フイルム株式会社 電子線、ｅｕｖ又はｘ線用レジスト組成物
US7160666B2 (en) * 2002-03-06 2007-01-09 Fuji Photo Film Co., Ltd. Photosensitive resin composition
JP2003316005A (ja) * 2002-04-24 2003-11-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物
CA2485516A1 (en) * 2002-05-16 2003-11-27 Rensselaer Polytechnic Institute Photopolymerizable compositions comprising thianthrenium salt cationic photoinitiators
JP2004101645A (ja) 2002-09-05 2004-04-02 Fuji Photo Film Co Ltd レジスト組成物
JP4056332B2 (ja) * 2002-09-06 2008-03-05 富士フイルム株式会社 レジスト組成物

Also Published As

Publication number Publication date
EP1693704A3 (en) 2009-09-02
JP2006215202A (ja) 2006-08-17
US20060172226A1 (en) 2006-08-03
EP1693704A2 (en) 2006-08-23

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