JP4405085B2 - 縦型窒化インジウムガリウムｌｅｄ - Google Patents

縦型窒化インジウムガリウムｌｅｄ Download PDF

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Publication number
JP4405085B2
JP4405085B2 JP2000575174A JP2000575174A JP4405085B2 JP 4405085 B2 JP4405085 B2 JP 4405085B2 JP 2000575174 A JP2000575174 A JP 2000575174A JP 2000575174 A JP2000575174 A JP 2000575174A JP 4405085 B2 JP4405085 B2 JP 4405085B2
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Prior art keywords
gallium nitride
nitride layer
layer
quantum well
emitting diode
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Expired - Lifetime
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JP2000575174A
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Japanese (ja)
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JP2002527890A (ja
JP2002527890A5 (enExample
Inventor
ドーヴァースパイク，キャスリーン・マリー
エドモンド，ジョン・アダム
コング，フア−シュアン
ディーリンガー，ハイジ・マリー
スレイター，デーヴィッド・ビー，ジュニアー
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
JP2000575174A 1998-09-16 1999-09-16 縦型窒化インジウムガリウムｌｅｄ Expired - Lifetime JP4405085B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/154,363 US6459100B1 (en) 1998-09-16 1998-09-16 Vertical geometry ingan LED
US09/154,363 1998-09-16
PCT/US1999/021362 WO2000021144A2 (en) 1998-09-16 1999-09-16 VERTICAL GEOMETRY InGaN LED

Related Child Applications (1)

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JP2007249520A Division JP4625979B2 (ja) 1998-09-16 2007-09-26 縦型窒化インジウムガリウムｌｅｄ

Publications (3)

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JP2002527890A JP2002527890A (ja) 2002-08-27
JP2002527890A5 JP2002527890A5 (enExample) 2005-12-22
JP4405085B2 true JP4405085B2 (ja) 2010-01-27

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JP2000575174A Expired - Lifetime JP4405085B2 (ja) 1998-09-16 1999-09-16 縦型窒化インジウムガリウムｌｅｄ
JP2007249520A Expired - Lifetime JP4625979B2 (ja) 1998-09-16 2007-09-26 縦型窒化インジウムガリウムｌｅｄ

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Country Link
US (5) US6459100B1 (enExample)
EP (1) EP1116282B1 (enExample)
JP (2) JP4405085B2 (enExample)
KR (1) KR100639170B1 (enExample)
CN (1) CN1206744C (enExample)
AT (1) ATE459105T1 (enExample)
AU (1) AU2342600A (enExample)
CA (1) CA2344391C (enExample)
DE (1) DE69942065D1 (enExample)
TW (1) TW475275B (enExample)
WO (1) WO2000021144A2 (enExample)

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ATE459105T1 (de) 2010-03-15
USRE45517E1 (en) 2015-05-19
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