AU2342600A - Vertical geometry ingan led - Google Patents

Vertical geometry ingan led

Info

Publication number
AU2342600A
AU2342600A AU23426/00A AU2342600A AU2342600A AU 2342600 A AU2342600 A AU 2342600A AU 23426/00 A AU23426/00 A AU 23426/00A AU 2342600 A AU2342600 A AU 2342600A AU 2342600 A AU2342600 A AU 2342600A
Authority
AU
Australia
Prior art keywords
vertical geometry
quantum well
emitting diode
light emitting
ingan led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU23426/00A
Other languages
English (en)
Inventor
Heidi Marie Dieringer
Kathleen Marie Doverspike
John Adam Edmond
Hua-Shuang Kong
David B. Slater Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Publication of AU2342600A publication Critical patent/AU2342600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
AU23426/00A 1998-09-16 1999-09-16 Vertical geometry ingan led Abandoned AU2342600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09154363 1998-09-16
US09/154,363 US6459100B1 (en) 1998-09-16 1998-09-16 Vertical geometry ingan LED
PCT/US1999/021362 WO2000021144A2 (en) 1998-09-16 1999-09-16 VERTICAL GEOMETRY InGaN LED

Publications (1)

Publication Number Publication Date
AU2342600A true AU2342600A (en) 2000-04-26

Family

ID=22551059

Family Applications (1)

Application Number Title Priority Date Filing Date
AU23426/00A Abandoned AU2342600A (en) 1998-09-16 1999-09-16 Vertical geometry ingan led

Country Status (11)

Country Link
US (5) US6459100B1 (enExample)
EP (1) EP1116282B1 (enExample)
JP (2) JP4405085B2 (enExample)
KR (1) KR100639170B1 (enExample)
CN (1) CN1206744C (enExample)
AT (1) ATE459105T1 (enExample)
AU (1) AU2342600A (enExample)
CA (1) CA2344391C (enExample)
DE (1) DE69942065D1 (enExample)
TW (1) TW475275B (enExample)
WO (1) WO2000021144A2 (enExample)

Families Citing this family (135)

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