GB2361354B - White light emitting diode with single asymmetric quantum well in active layer - Google Patents
White light emitting diode with single asymmetric quantum well in active layerInfo
- Publication number
- GB2361354B GB2361354B GB0009153A GB0009153A GB2361354B GB 2361354 B GB2361354 B GB 2361354B GB 0009153 A GB0009153 A GB 0009153A GB 0009153 A GB0009153 A GB 0009153A GB 2361354 B GB2361354 B GB 2361354B
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- emitting diode
- active layer
- white light
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0009153A GB2361354B (en) | 2000-04-13 | 2000-04-13 | White light emitting diode with single asymmetric quantum well in active layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0009153A GB2361354B (en) | 2000-04-13 | 2000-04-13 | White light emitting diode with single asymmetric quantum well in active layer |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0009153D0 GB0009153D0 (en) | 2000-05-31 |
GB2361354A GB2361354A (en) | 2001-10-17 |
GB2361354B true GB2361354B (en) | 2004-06-30 |
Family
ID=9889866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0009153A Expired - Fee Related GB2361354B (en) | 2000-04-13 | 2000-04-13 | White light emitting diode with single asymmetric quantum well in active layer |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2361354B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
CN101346827B (en) | 2006-09-22 | 2010-10-06 | 新加坡科技研究局 | III nitride white light LED |
DE102007058723A1 (en) | 2007-09-10 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Light emitting structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0420695A2 (en) * | 1989-09-29 | 1991-04-03 | Shin-Etsu Handotai Company Limited | Multiple wavelength light emitting device |
US5126803A (en) * | 1991-03-11 | 1992-06-30 | The Boeing Company | Broadband quantum well LED |
US5864309A (en) * | 1996-10-17 | 1999-01-26 | Winbond Electronics Corp. | Serial data timing base modulator |
WO2000021144A2 (en) * | 1998-09-16 | 2000-04-13 | Cree Inc. | VERTICAL GEOMETRY InGaN LED |
-
2000
- 2000-04-13 GB GB0009153A patent/GB2361354B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0420695A2 (en) * | 1989-09-29 | 1991-04-03 | Shin-Etsu Handotai Company Limited | Multiple wavelength light emitting device |
US5126803A (en) * | 1991-03-11 | 1992-06-30 | The Boeing Company | Broadband quantum well LED |
US5864309A (en) * | 1996-10-17 | 1999-01-26 | Winbond Electronics Corp. | Serial data timing base modulator |
WO2000021144A2 (en) * | 1998-09-16 | 2000-04-13 | Cree Inc. | VERTICAL GEOMETRY InGaN LED |
Also Published As
Publication number | Publication date |
---|---|
GB2361354A (en) | 2001-10-17 |
GB0009153D0 (en) | 2000-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20050413 |