CN1206744C - 垂直结构lnGaN发光二极管 - Google Patents

垂直结构lnGaN发光二极管 Download PDF

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Publication number
CN1206744C
CN1206744C CNB998122734A CN99812273A CN1206744C CN 1206744 C CN1206744 C CN 1206744C CN B998122734 A CNB998122734 A CN B998122734A CN 99812273 A CN99812273 A CN 99812273A CN 1206744 C CN1206744 C CN 1206744C
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China
Prior art keywords
gallium nitride
nitride layer
emitting diode
layer
type
Prior art date
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Expired - Lifetime
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CNB998122734A
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English (en)
Chinese (zh)
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CN1413362A (zh
Inventor
K·M·多佛斯派克
J·A·埃德蒙
H－S·孔
H·M·迪尔林格
D·B·小斯拉特
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CNB998122734A 1998-09-16 1999-09-16 垂直结构lnGaN发光二极管 Expired - Lifetime CN1206744C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/154,363 1998-09-16
US09/154,363 US6459100B1 (en) 1998-09-16 1998-09-16 Vertical geometry ingan LED

Publications (2)

Publication Number Publication Date
CN1413362A CN1413362A (zh) 2003-04-23
CN1206744C true CN1206744C (zh) 2005-06-15

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CNB998122734A Expired - Lifetime CN1206744C (zh) 1998-09-16 1999-09-16 垂直结构lnGaN发光二极管

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US (5) US6459100B1 (enExample)
EP (1) EP1116282B1 (enExample)
JP (2) JP4405085B2 (enExample)
KR (1) KR100639170B1 (enExample)
CN (1) CN1206744C (enExample)
AT (1) ATE459105T1 (enExample)
AU (1) AU2342600A (enExample)
CA (1) CA2344391C (enExample)
DE (1) DE69942065D1 (enExample)
TW (1) TW475275B (enExample)
WO (1) WO2000021144A2 (enExample)

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