JP4338784B2 - 短チャネル・フェルミしきい値電界効果型トランジスタ - Google Patents

短チャネル・フェルミしきい値電界効果型トランジスタ Download PDF

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Publication number
JP4338784B2
JP4338784B2 JP50689997A JP50689997A JP4338784B2 JP 4338784 B2 JP4338784 B2 JP 4338784B2 JP 50689997 A JP50689997 A JP 50689997A JP 50689997 A JP50689997 A JP 50689997A JP 4338784 B2 JP4338784 B2 JP 4338784B2
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region
source
fermi
drain
depth
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JPH11510312A5 (https=
JPH11510312A (ja
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デネン，マイケル・ウィリアム
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サンダーバード・テクノロジーズ，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP50689997A 1995-07-21 1996-07-19 短チャネル・フェルミしきい値電界効果型トランジスタ Expired - Fee Related JP4338784B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/505,085 1995-07-21
US08/505,085 US5814869A (en) 1992-01-28 1995-07-21 Short channel fermi-threshold field effect transistors
PCT/US1996/011968 WO1997004489A1 (en) 1995-07-21 1996-07-19 Short channel fermi-threshold field effect transistors

Publications (3)

Publication Number Publication Date
JPH11510312A JPH11510312A (ja) 1999-09-07
JPH11510312A5 JPH11510312A5 (https=) 2004-08-26
JP4338784B2 true JP4338784B2 (ja) 2009-10-07

Family

ID=24008940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50689997A Expired - Fee Related JP4338784B2 (ja) 1995-07-21 1996-07-19 短チャネル・フェルミしきい値電界効果型トランジスタ

Country Status (8)

Country Link
US (1) US5814869A (https=)
EP (1) EP0843898B1 (https=)
JP (1) JP4338784B2 (https=)
KR (1) KR100417847B1 (https=)
AU (1) AU6503996A (https=)
CA (1) CA2227011C (https=)
DE (1) DE69628840T2 (https=)
WO (1) WO1997004489A1 (https=)

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US6323520B1 (en) * 1998-07-31 2001-11-27 Vlsi Technology, Inc. Method for forming channel-region doping profile for semiconductor device
US6373094B2 (en) * 1998-09-11 2002-04-16 Texas Instruments Incorporated EEPROM cell using conventional process steps
US20020036328A1 (en) * 1998-11-16 2002-03-28 William R. Richards, Jr. Offset drain fermi-threshold field effect transistors
US6365475B1 (en) * 2000-03-27 2002-04-02 United Microelectronics Corp. Method of forming a MOS transistor
JP3881840B2 (ja) * 2000-11-14 2007-02-14 独立行政法人産業技術総合研究所 半導体装置
US6555872B1 (en) 2000-11-22 2003-04-29 Thunderbird Technologies, Inc. Trench gate fermi-threshold field effect transistors
US6432777B1 (en) 2001-06-06 2002-08-13 International Business Machines Corporation Method for increasing the effective well doping in a MOSFET as the gate length decreases
US20040079997A1 (en) * 2002-10-24 2004-04-29 Noriyuki Miura Semiconductor device and metal-oxide-semiconductor field-effect transistor
KR101022854B1 (ko) * 2002-11-29 2011-03-17 글로벌파운드리즈 인크. 도핑된 고유전 측벽 스페이서들을 구비한 전계 효과트랜지스터의 드레인/소스 확장 구조
US6867104B2 (en) * 2002-12-28 2005-03-15 Intel Corporation Method to form a structure to decrease area capacitance within a buried insulator device
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US20060220112A1 (en) * 2005-04-01 2006-10-05 International Business Machines Corporation Semiconductor device forming method and structure for retarding dopant-enhanced diffusion
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US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
WO2008128164A1 (en) * 2007-04-12 2008-10-23 The Penn State Research Foundation Accumulation field effect microelectronic device and process for the formation thereof
US9209246B2 (en) 2007-04-12 2015-12-08 The Penn State University Accumulation field effect microelectronic device and process for the formation thereof
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
US10553494B2 (en) * 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown resistant semiconductor apparatus and method of making same

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Also Published As

Publication number Publication date
CA2227011C (en) 2007-10-16
EP0843898A1 (en) 1998-05-27
EP0843898B1 (en) 2003-06-25
US5814869A (en) 1998-09-29
HK1010604A1 (en) 1999-06-25
KR100417847B1 (ko) 2004-04-29
DE69628840T2 (de) 2004-05-06
JPH11510312A (ja) 1999-09-07
WO1997004489A1 (en) 1997-02-06
CA2227011A1 (en) 1997-02-06
AU6503996A (en) 1997-02-18
DE69628840D1 (de) 2003-07-31

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