JP4313941B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4313941B2
JP4313941B2 JP2000301308A JP2000301308A JP4313941B2 JP 4313941 B2 JP4313941 B2 JP 4313941B2 JP 2000301308 A JP2000301308 A JP 2000301308A JP 2000301308 A JP2000301308 A JP 2000301308A JP 4313941 B2 JP4313941 B2 JP 4313941B2
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JP
Japan
Prior art keywords
insulating film
element isolation
gate electrode
semiconductor substrate
isolation insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000301308A
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English (en)
Japanese (ja)
Other versions
JP2002110825A (ja
JP2002110825A5 (enExample
Inventor
理一郎 白田
正之 市毛
敦祥 佐藤
紀久子 杉前
博顕 間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000301308A priority Critical patent/JP4313941B2/ja
Priority to US09/899,155 priority patent/US6667507B2/en
Priority to TW090123780A priority patent/TW520569B/zh
Priority to KR10-2001-0060506A priority patent/KR100412001B1/ko
Publication of JP2002110825A publication Critical patent/JP2002110825A/ja
Priority to US10/685,599 priority patent/US6977409B2/en
Publication of JP2002110825A5 publication Critical patent/JP2002110825A5/ja
Priority to US11/259,142 priority patent/US7361951B2/en
Application granted granted Critical
Publication of JP4313941B2 publication Critical patent/JP4313941B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000301308A 2000-09-29 2000-09-29 半導体記憶装置 Expired - Fee Related JP4313941B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000301308A JP4313941B2 (ja) 2000-09-29 2000-09-29 半導体記憶装置
US09/899,155 US6667507B2 (en) 2000-09-29 2001-07-06 Flash memory having memory section and peripheral circuit section
TW090123780A TW520569B (en) 2000-09-29 2001-09-26 Semiconductor storage device and the manufacturing method thereof
KR10-2001-0060506A KR100412001B1 (ko) 2000-09-29 2001-09-28 반도체 기억 장치 및 그 제조 방법
US10/685,599 US6977409B2 (en) 2000-09-29 2003-10-16 Flash memory having memory section and peripheral circuit section
US11/259,142 US7361951B2 (en) 2000-09-29 2005-10-27 Flash memory having memory section and peripheral circuit section

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000301308A JP4313941B2 (ja) 2000-09-29 2000-09-29 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007269479A Division JP4856043B2 (ja) 2007-10-16 2007-10-16 半導体記憶装置の動作方法

Publications (3)

Publication Number Publication Date
JP2002110825A JP2002110825A (ja) 2002-04-12
JP2002110825A5 JP2002110825A5 (enExample) 2005-08-25
JP4313941B2 true JP4313941B2 (ja) 2009-08-12

Family

ID=18782866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000301308A Expired - Fee Related JP4313941B2 (ja) 2000-09-29 2000-09-29 半導体記憶装置

Country Status (4)

Country Link
US (3) US6667507B2 (enExample)
JP (1) JP4313941B2 (enExample)
KR (1) KR100412001B1 (enExample)
TW (1) TW520569B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713346B2 (en) * 1999-03-01 2004-03-30 Micron Technology, Inc. Methods of forming a line of flash memory cells
US6624022B1 (en) * 2000-08-29 2003-09-23 Micron Technology, Inc. Method of forming FLASH memory
US6590255B2 (en) * 2000-09-29 2003-07-08 Kabushiki Kaisha Toshiba Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
US7064978B2 (en) * 2002-07-05 2006-06-20 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
JP4030839B2 (ja) * 2002-08-30 2008-01-09 スパンション エルエルシー メモリ集積回路装置の製造方法
US7302590B2 (en) * 2003-01-06 2007-11-27 Microsoft Corporation Systems and methods for providing time-and weight-based flexibly tolerant hardware ID
JP3851914B2 (ja) * 2003-07-09 2006-11-29 株式会社東芝 不揮発性半導体記憶装置
US7060561B2 (en) * 2004-02-25 2006-06-13 United Microelectronics Corp. Method for fabricating memory device
US7344942B2 (en) * 2005-01-26 2008-03-18 Micron Technology, Inc. Isolation regions for semiconductor devices and their formation
JP4113199B2 (ja) 2005-04-05 2008-07-09 株式会社東芝 半導体装置
JP4129009B2 (ja) 2005-05-31 2008-07-30 株式会社東芝 半導体集積回路装置
JP4764160B2 (ja) * 2005-12-21 2011-08-31 株式会社東芝 半導体装置
JP2007311566A (ja) 2006-05-18 2007-11-29 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP2007201494A (ja) * 2007-03-26 2007-08-09 Toshiba Corp 不揮発性半導体記憶装置
KR101374317B1 (ko) * 2007-08-23 2014-03-14 삼성전자주식회사 저항 소자를 갖는 반도체 장치 및 그 형성방법
JP4660567B2 (ja) * 2008-03-18 2011-03-30 株式会社東芝 半導体記憶装置
US7910973B2 (en) 2008-03-17 2011-03-22 Kabushiki Kaisha Toshiba Semiconductor storage device
JP2009231445A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 半導体記憶装置
JP2009267107A (ja) * 2008-04-25 2009-11-12 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010098067A (ja) 2008-10-15 2010-04-30 Toshiba Corp 半導体装置
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
JP2012043856A (ja) * 2010-08-16 2012-03-01 Toshiba Corp 半導体装置およびその製造方法
TWI400464B (zh) * 2011-02-11 2013-07-01 Etron Technology Inc 具有外部測試電壓的電路
JP2013207123A (ja) 2012-03-29 2013-10-07 Toshiba Corp 半導体装置
JP2015050346A (ja) * 2013-09-02 2015-03-16 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
CN112216689A (zh) * 2019-07-12 2021-01-12 长鑫存储技术有限公司 半导体结构及其制作方法
KR20220008991A (ko) * 2020-07-14 2022-01-24 삼성전자주식회사 비휘발성 메모리 장치 및 이의 동작 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160097A (ja) * 1986-12-24 1988-07-02 Toshiba Corp 半導体不揮発性メモリ
KR0183877B1 (ko) * 1996-06-07 1999-03-20 김광호 불휘발성 메모리 장치 및 그 제조방법
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3602691B2 (ja) 1997-06-27 2004-12-15 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP3586072B2 (ja) * 1997-07-10 2004-11-10 株式会社東芝 不揮発性半導体記憶装置
JP3547955B2 (ja) * 1997-10-16 2004-07-28 株式会社ルネサステクノロジ 半導体装置
JP3742230B2 (ja) 1998-08-28 2006-02-01 株式会社東芝 電流発生回路
KR100275741B1 (ko) * 1998-08-31 2000-12-15 윤종용 비휘발성 기억소자의 제조방법
US6717233B1 (en) * 1999-02-01 2004-04-06 Bae Systems Information And Electronic Systems Integration, Inc. Method for fabricating resistors within semiconductor integrated circuit devices
US6228713B1 (en) * 1999-06-28 2001-05-08 Chartered Semiconductor Manufacturing Ltd. Self-aligned floating gate for memory application using shallow trench isolation
US6590255B2 (en) 2000-09-29 2003-07-08 Kabushiki Kaisha Toshiba Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
JP4008651B2 (ja) 2000-10-31 2007-11-14 株式会社東芝 半導体装置とその製造方法

Also Published As

Publication number Publication date
US6977409B2 (en) 2005-12-20
KR100412001B1 (ko) 2003-12-24
KR20020025814A (ko) 2002-04-04
US20040081002A1 (en) 2004-04-29
JP2002110825A (ja) 2002-04-12
US6667507B2 (en) 2003-12-23
US20060033151A1 (en) 2006-02-16
US7361951B2 (en) 2008-04-22
TW520569B (en) 2003-02-11
US20020038884A1 (en) 2002-04-04

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