JP4189395B2 - 不揮発性半導体記憶装置及び読み出し方法 - Google Patents

不揮発性半導体記憶装置及び読み出し方法 Download PDF

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Publication number
JP4189395B2
JP4189395B2 JP2005193329A JP2005193329A JP4189395B2 JP 4189395 B2 JP4189395 B2 JP 4189395B2 JP 2005193329 A JP2005193329 A JP 2005193329A JP 2005193329 A JP2005193329 A JP 2005193329A JP 4189395 B2 JP4189395 B2 JP 4189395B2
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Prior art keywords
memory cell
voltage
column
row
read
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Japanese (ja)
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JP2006066052A (ja
Inventor
豪哉 川添
幸夫 玉井
篤志 島岡
英徳 森本
信義 粟屋
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Sharp Corp
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Sharp Corp
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Priority to JP2005193329A priority Critical patent/JP4189395B2/ja
Priority to KR1020050065632A priority patent/KR100745516B1/ko
Priority to DE602005012028T priority patent/DE602005012028D1/de
Priority to EP05254692A priority patent/EP1622163B1/en
Priority to US11/191,900 priority patent/US7535746B2/en
Priority to TW094125604A priority patent/TWI277973B/zh
Publication of JP2006066052A publication Critical patent/JP2006066052A/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Read Only Memory (AREA)
JP2005193329A 2004-07-28 2005-07-01 不揮発性半導体記憶装置及び読み出し方法 Active JP4189395B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005193329A JP4189395B2 (ja) 2004-07-28 2005-07-01 不揮発性半導体記憶装置及び読み出し方法
KR1020050065632A KR100745516B1 (ko) 2004-07-28 2005-07-20 비휘발성 반도체 기억장치 및 판독방법
DE602005012028T DE602005012028D1 (de) 2004-07-28 2005-07-27 Nichtflüchtige Halbleiterspeicheranordnung und Leseverfahren
EP05254692A EP1622163B1 (en) 2004-07-28 2005-07-27 Nonvolatile semiconductor memory device and read method
US11/191,900 US7535746B2 (en) 2004-07-28 2005-07-27 Nonvolatile semiconductor memory device and read method
TW094125604A TWI277973B (en) 2004-07-28 2005-07-28 Nonvolatile semiconductor memory device and read method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004219810 2004-07-28
JP2005193329A JP4189395B2 (ja) 2004-07-28 2005-07-01 不揮発性半導体記憶装置及び読み出し方法

Publications (2)

Publication Number Publication Date
JP2006066052A JP2006066052A (ja) 2006-03-09
JP4189395B2 true JP4189395B2 (ja) 2008-12-03

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JP2005193329A Active JP4189395B2 (ja) 2004-07-28 2005-07-01 不揮発性半導体記憶装置及び読み出し方法

Country Status (6)

Country Link
US (1) US7535746B2 (ko)
EP (1) EP1622163B1 (ko)
JP (1) JP4189395B2 (ko)
KR (1) KR100745516B1 (ko)
DE (1) DE602005012028D1 (ko)
TW (1) TWI277973B (ko)

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Also Published As

Publication number Publication date
EP1622163B1 (en) 2008-12-31
KR20060053918A (ko) 2006-05-22
US20060023497A1 (en) 2006-02-02
JP2006066052A (ja) 2006-03-09
EP1622163A1 (en) 2006-02-01
TW200620276A (en) 2006-06-16
DE602005012028D1 (de) 2009-02-12
KR100745516B1 (ko) 2007-08-02
US7535746B2 (en) 2009-05-19
TWI277973B (en) 2007-04-01

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