JP4077849B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
- Publication number
- JP4077849B2 JP4077849B2 JP2006128497A JP2006128497A JP4077849B2 JP 4077849 B2 JP4077849 B2 JP 4077849B2 JP 2006128497 A JP2006128497 A JP 2006128497A JP 2006128497 A JP2006128497 A JP 2006128497A JP 4077849 B2 JP4077849 B2 JP 4077849B2
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- Prior art keywords
- substrate
- substrate table
- gap
- liquid
- lithographic apparatus
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/120,176 US7433016B2 (en) | 2005-05-03 | 2005-05-03 | Lithographic apparatus and device manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007324518A Division JP4820809B2 (ja) | 2005-05-03 | 2007-12-17 | リソグラフィ装置およびデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006313910A JP2006313910A (ja) | 2006-11-16 |
| JP2006313910A5 JP2006313910A5 (enExample) | 2007-07-26 |
| JP4077849B2 true JP4077849B2 (ja) | 2008-04-23 |
Family
ID=36716876
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006128497A Active JP4077849B2 (ja) | 2005-05-03 | 2006-05-02 | リソグラフィ装置およびデバイス製造方法 |
| JP2007324518A Active JP4820809B2 (ja) | 2005-05-03 | 2007-12-17 | リソグラフィ装置およびデバイス製造方法 |
| JP2010048947A Expired - Fee Related JP5235926B2 (ja) | 2005-05-03 | 2010-03-05 | リソグラフィ装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007324518A Active JP4820809B2 (ja) | 2005-05-03 | 2007-12-17 | リソグラフィ装置およびデバイス製造方法 |
| JP2010048947A Expired - Fee Related JP5235926B2 (ja) | 2005-05-03 | 2010-03-05 | リソグラフィ装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (10) | US7433016B2 (enExample) |
| EP (4) | EP2339404B1 (enExample) |
| JP (3) | JP4077849B2 (enExample) |
| KR (1) | KR100706922B1 (enExample) |
| CN (3) | CN1858656B (enExample) |
| SG (1) | SG126920A1 (enExample) |
| TW (2) | TWI410745B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2864823B1 (fr) | 2004-01-05 | 2006-08-18 | Oreal | Tete de distribution verrouillable |
| CN102385260B (zh) * | 2005-02-10 | 2014-11-05 | Asml荷兰有限公司 | 浸没液体、曝光装置及曝光方法 |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7837762B2 (en) * | 2005-05-17 | 2010-11-23 | Freescale Semiconductor, Inc. | Method of distancing a bubble and bubble displacement apparatus |
| US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4923480B2 (ja) * | 2005-08-23 | 2012-04-25 | 株式会社ニコン | 露光装置及びデバイス製造方法、計測部材 |
| US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| NL2002983A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
| JP2010118527A (ja) * | 2008-11-13 | 2010-05-27 | Canon Inc | 露光装置、およびデバイス製造方法 |
| NL2004305A (en) * | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
| SG188036A1 (en) | 2011-08-18 | 2013-03-28 | Asml Netherlands Bv | Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method |
| KR101689226B1 (ko) * | 2012-05-22 | 2016-12-23 | 에이에스엠엘 네델란즈 비.브이. | 센서, 리소그래피 장치 및 디바이스 제조 방법 |
| KR101911400B1 (ko) | 2012-05-29 | 2018-10-24 | 에이에스엠엘 네델란즈 비.브이. | 대상물 홀더 및 리소그래피 장치 |
| CN104570618B (zh) * | 2014-12-25 | 2016-08-17 | 浙江大学 | 基于亲疏水交替表面的浸没流场密封装置 |
| CN104597720B (zh) * | 2015-01-15 | 2016-08-17 | 浙江大学 | 一种用于浸没式光刻机的气液隔离装置 |
| CN113189849B (zh) | 2021-04-22 | 2023-08-11 | 中国科学院光电技术研究所 | 一种近场光刻浸没系统及其浸没单元和接口模组 |
Family Cites Families (156)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE224448C (enExample) | ||||
| DE221563C (enExample) | ||||
| DE242880C (enExample) | ||||
| DE206607C (enExample) | ||||
| GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
| US3647587A (en) * | 1969-06-23 | 1972-03-07 | Burlington Industries Inc | Method of installing invisible seams |
| EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
| FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
| JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
| DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS6265326U (enExample) | 1985-10-16 | 1987-04-23 | ||
| JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
| JPS62121417U (enExample) | 1986-01-24 | 1987-08-01 | ||
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JPS63157419U (enExample) | 1987-03-31 | 1988-10-14 | ||
| US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
| JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
| AU617957B2 (en) | 1989-10-26 | 1991-12-05 | Mitsubishi Denki Kabushiki Kaisha | Boiling and condensing heat transfer type cooler device for power semiconductor switching elements |
| US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
| JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
| US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
| GB0014946D0 (en) * | 2000-06-20 | 2000-08-09 | Cerestar Holding Bv | Starch composition and the use thereof in the wet-end of paper preparation |
| TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
| TW567400B (en) | 2000-11-23 | 2003-12-21 | Asml Netherlands Bv | Lithographic projection apparatus, integrated circuit device manufacturing method, and integrated circuit device manufactured by the manufacturing method |
| US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
| US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
| CN1791839A (zh) | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
| US6730175B2 (en) | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| TW574597B (en) | 2002-03-08 | 2004-02-01 | Asml Netherlands Bv | Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method |
| WO2003076375A1 (fr) * | 2002-03-14 | 2003-09-18 | National Institute Of Agrobiological Sciences | Nouveaux diterpenoides conferant une resistance a la contrainte aux plantes |
| US20040011780A1 (en) | 2002-07-22 | 2004-01-22 | Applied Materials, Inc. | Method for achieving a desired process uniformity by modifying surface topography of substrate heater |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004053956A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及び露光方法、デバイス製造方法 |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
| JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
| JP4595320B2 (ja) * | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
| CN101424883B (zh) | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
| KR20050085026A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치 |
| KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1571696A4 (en) | 2002-12-10 | 2008-03-26 | Nikon Corp | EXPOSURE DEVICE AND METHOD OF MANUFACTURE |
| DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
| CN1723541B (zh) * | 2002-12-10 | 2010-06-02 | 株式会社尼康 | 曝光装置和器件制造方法 |
| ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| ATE335272T1 (de) | 2002-12-19 | 2006-08-15 | Koninkl Philips Electronics Nv | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
| WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
| SG2014015176A (en) | 2003-04-10 | 2015-06-29 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
| EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| KR101745223B1 (ko) | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| SG2012031738A (en) | 2003-04-11 | 2015-07-30 | Nippon Kogaku Kk | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI612556B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光裝置、曝光方法及元件製造方法 |
| US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101528089B1 (ko) | 2003-06-13 | 2015-06-11 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
| EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
| JP4729876B2 (ja) * | 2003-07-09 | 2011-07-20 | 株式会社ニコン | 露光装置、露光方法、並びにデバイス製造方法 |
| SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4376718B2 (ja) * | 2003-07-28 | 2009-12-02 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、デバイス製造方法、及び基板 |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| KR101935709B1 (ko) | 2003-07-28 | 2019-01-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP4513299B2 (ja) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| TW201738932A (zh) * | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
| JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| JP2005150290A (ja) | 2003-11-13 | 2005-06-09 | Canon Inc | 露光装置およびデバイスの製造方法 |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
| JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
| JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
| KR101281397B1 (ko) * | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| JP2005191381A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| JP2005191393A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP4018647B2 (ja) | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
| JP2005286068A (ja) | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
| JP4510494B2 (ja) | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
| KR101421870B1 (ko) | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 |
| US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
| US20060001851A1 (en) | 2004-07-01 | 2006-01-05 | Grant Robert B | Immersion photolithography system |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8102512B2 (en) | 2004-09-17 | 2012-01-24 | Nikon Corporation | Substrate holding device, exposure apparatus, and device manufacturing method |
| EP1807455B1 (en) | 2004-11-04 | 2019-04-03 | Arlanxeo Netherlands B.V. | Method for preparing an imidized polymer |
| US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7433016B2 (en) * | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4641469B2 (ja) | 2005-09-06 | 2011-03-02 | キヤノン株式会社 | 画像形成装置、画像形成装置の制御方法、プログラム |
| WO2007083592A1 (ja) | 2006-01-17 | 2007-07-26 | Nikon Corporation | 基板保持装置及び露光装置、並びにデバイス製造方法 |
| US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2007266504A (ja) | 2006-03-29 | 2007-10-11 | Canon Inc | 露光装置 |
| US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| WO2009072252A1 (ja) | 2007-12-06 | 2009-06-11 | Shin-Etsu Handotai Co., Ltd. | 気相成長用サセプタおよび気相成長装置 |
| US20120196242A1 (en) | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
| US10242890B2 (en) | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
| US20130087309A1 (en) | 2011-10-11 | 2013-04-11 | Applied Materials, Inc. | Substrate support with temperature control |
| WO2015119744A1 (en) | 2014-02-07 | 2015-08-13 | Applied Materials, Inc. | Chucking capability for bowed wafers on dsa |
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